公开(公告)号：US20180374721A1

公开(公告)日：2018-12-27

申请号：US16118734

申请日：2018-08-31

申请人： NUFLARE TECHNOLOGY, INC. ,  SHOWA DENKO K.K. ,  CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY

发明人： Kunihiko Suzuki ,  Naohisa Ikeya ,  Keisuke Fukada ,  Masahiko Ito ,  Isaho Kamata ,  Hidekazu Tsuchida ,  Hiroaki Fujibayashi ,  Hideyuki Uehigashi ,  Masami Naito ,  Kazukuni Hara ,  Hirofumi Aoki ,  Takahiro Kozawa

IPC分类号： H01L21/67 ,  H01L21/205 ,  C23C16/455

摘要： A supply part includes a first partition, a second partition under the first partition, a third partition under the second partition, a first flow path between the first partition and the second partition allowing a first gas to be introduced therein, a second flow path between the second partition and the third partition allowing a second gas to be introduced therein, a first piping extending from the second partition to reach below the third partition and being communicated with the first flow path, a second piping extending from the third partition to reach below the third partition and being communicated with the second flow path, and a convex portion provided on an outer circumferential surface of the first piping or an inner circumferential surface of the second piping protruding from one of the outer circumferential surface and the inner circumferential surface toward the other one.

公开(公告)号：US11107892B2

公开(公告)日：2021-08-31

申请号：US16616780

申请日：2018-04-19

申请人： SHOWA DENKO K.K. ,  Central Research Institute of Electric Power Industry ,  DENSO CORPORATION

发明人： Keisuke Fukada ,  Naoto Ishibashi ,  Akira Bando ,  Masahiko Ito ,  Isaho Kamata ,  Hidekazu Tsuchida ,  Kazukuni Hara ,  Masami Naito ,  Hideyuki Uehigashi ,  Hiroaki Fujibayashi ,  Hirofumi Aoki ,  Toshikazu Sugiura ,  Katsumi Suzuki

IPC分类号： H01L29/16 ,  C23C16/42 ,  C30B29/36 ,  H01L21/02

摘要： A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 μm/h or more from an initial growth stage.

公开(公告)号：US10896831B2

公开(公告)日：2021-01-19

申请号：US16118734

申请日：2018-08-31

申请人： NUFLARE TECHNOLOGY, INC. ,  SHOWA DENKO K.K. ,  CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY

发明人： Kunihiko Suzuki ,  Naohisa Ikeya ,  Keisuke Fukada ,  Masahiko Ito ,  Isaho Kamata ,  Hidekazu Tsuchida ,  Hiroaki Fujibayashi ,  Hideyuki Uehigashi ,  Masami Naito ,  Kazukuni Hara ,  Hirofumi Aoki ,  Takahiro Kozawa

IPC分类号： C23C16/40 ,  H01L21/67 ,  H01L21/205 ,  C23C16/455 ,  B01F3/02 ,  H01L21/02

摘要： A supply part includes a first partition, a second partition under the first partition, a third partition under the second partition, a first flow path between the first partition and the second partition allowing a first gas to be introduced therein, a second flow path between the second partition and the third partition allowing a second gas to be introduced therein, a first piping extending from the second partition to reach below the third partition and being communicated with the first flow path, a second piping extending from the third partition to reach below the third partition and being communicated with the second flow path, and a convex portion provided on an outer circumferential surface of the first piping or an inner circumferential surface of the second piping protruding from one of the outer circumferential surface and the inner circumferential surface toward the other one.

公开(公告)号：US10262863B2

公开(公告)日：2019-04-16

申请号：US15534317

申请日：2015-12-08

申请人： SHOWA DENKO K.K. ,  CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY

发明人： Keisuke Fukada ,  Masahiko Ito ,  Isaho Kamata ,  Hidekazu Tsuchida ,  Hideyuki Uehigashi ,  Hiroaki Fujibayashi ,  Masami Naito ,  Kazukuni Hara ,  Takahiro Kozawa ,  Hirofumi Aoki

IPC分类号： H01L21/205 ,  C23C16/32 ,  C30B25/14 ,  C23C16/42 ,  C23C16/455 ,  C30B29/36 ,  C30B25/18 ,  C30B25/20 ,  H01L21/02

摘要： A method for manufacturing a SiC epitaxial wafer according to one aspect of the present invention includes separately introducing, into a reaction space for SiC epitaxial growth, a basic N-based gas composed of molecules containing an N atom within the molecular structure but having neither a double bond nor a triple bond between nitrogen atoms, and a Cl-based gas composed of molecules containing a Cl atom within the molecular structure, and mixing the N-based gas and the Cl-based gas at a temperature equal to or higher than the boiling point or sublimation temperature of a solid product generated by mixing the N-based gas and the Cl-based gas.

公开(公告)号：US11008670B2

公开(公告)日：2021-05-18

申请号：US16466369

申请日：2017-12-22

申请人： SHOWA DENKO K.K.

发明人： Yohei Fujikawa ,  Hideyuki Uehigashi

IPC分类号： C30B23/02 ,  C30B23/06 ,  C30B29/36 ,  C30B33/10

摘要： A manufacturing method of a SiC ingot includes a crystal growth step of growing a crystal on a principal plane having an offset angle with respect to a {0001} plane, in which, at least in a latter half growth step of the crystal growth step, after the crystal in the crystal growth step grows 7 mm or more from the principal plane, and in which, the crystal is grown by setting an acute angle, between the {0001} plane and an inclined plane which is perpendicular to a cut section cut along an offset direction and passes through both a center of a crystal growth surface and an offset downstream end portion of the crystal growth surface, to be equal to or more than an angle smaller than an offset angle by 2° and equal to or less than 8.6°.

公开(公告)号：US11618969B2

公开(公告)日：2023-04-04

申请号：US16349418

申请日：2017-11-14

申请人： SHOWA DENKO K.K. ,  DENSO CORPORATION

发明人： Yohei Fujikawa ,  Hideyuki Uehigashi

IPC分类号： C30B29/36 ,  C01B32/956 ,  C30B23/02

摘要： A SiC single crystal composite includes: a central portion positioned at a center in plan view; and an outer circumferential portion surrounding an outer circumference of the central portion, in which crystal planes of the central portion and the outer circumferential portion are inclined to each other or different from each other, a boundary is present between the central portion and the outer circumferential portion, and a direction of a crystal constituting the central portion and a direction of a crystal constituting the outer circumferential portion are different from each other via the boundary.