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公开(公告)号：US10896831B2
公开(公告)日：2021-01-19
申请号：US16118734
申请日：2018-08-31
申请人： NUFLARE TECHNOLOGY, INC. , SHOWA DENKO K.K. , CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY
发明人： Kunihiko Suzuki , Naohisa Ikeya , Keisuke Fukada , Masahiko Ito , Isaho Kamata , Hidekazu Tsuchida , Hiroaki Fujibayashi , Hideyuki Uehigashi , Masami Naito , Kazukuni Hara , Hirofumi Aoki , Takahiro Kozawa
IPC分类号： C23C16/40 , H01L21/67 , H01L21/205 , C23C16/455 , B01F3/02 , H01L21/02
摘要： A supply part includes a first partition, a second partition under the first partition, a third partition under the second partition, a first flow path between the first partition and the second partition allowing a first gas to be introduced therein, a second flow path between the second partition and the third partition allowing a second gas to be introduced therein, a first piping extending from the second partition to reach below the third partition and being communicated with the first flow path, a second piping extending from the third partition to reach below the third partition and being communicated with the second flow path, and a convex portion provided on an outer circumferential surface of the first piping or an inner circumferential surface of the second piping protruding from one of the outer circumferential surface and the inner circumferential surface toward the other one.
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公开(公告)号：US10262863B2
公开(公告)日：2019-04-16
申请号：US15534317
申请日：2015-12-08
发明人： Keisuke Fukada , Masahiko Ito , Isaho Kamata , Hidekazu Tsuchida , Hideyuki Uehigashi , Hiroaki Fujibayashi , Masami Naito , Kazukuni Hara , Takahiro Kozawa , Hirofumi Aoki
IPC分类号： H01L21/205 , C23C16/32 , C30B25/14 , C23C16/42 , C23C16/455 , C30B29/36 , C30B25/18 , C30B25/20 , H01L21/02
摘要： A method for manufacturing a SiC epitaxial wafer according to one aspect of the present invention includes separately introducing, into a reaction space for SiC epitaxial growth, a basic N-based gas composed of molecules containing an N atom within the molecular structure but having neither a double bond nor a triple bond between nitrogen atoms, and a Cl-based gas composed of molecules containing a Cl atom within the molecular structure, and mixing the N-based gas and the Cl-based gas at a temperature equal to or higher than the boiling point or sublimation temperature of a solid product generated by mixing the N-based gas and the Cl-based gas.
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公开(公告)号：US20180374721A1
公开(公告)日：2018-12-27
申请号：US16118734
申请日：2018-08-31
申请人： NUFLARE TECHNOLOGY, INC. , SHOWA DENKO K.K. , CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY
发明人： Kunihiko Suzuki , Naohisa Ikeya , Keisuke Fukada , Masahiko Ito , Isaho Kamata , Hidekazu Tsuchida , Hiroaki Fujibayashi , Hideyuki Uehigashi , Masami Naito , Kazukuni Hara , Hirofumi Aoki , Takahiro Kozawa
IPC分类号： H01L21/67 , H01L21/205 , C23C16/455
摘要： A supply part includes a first partition, a second partition under the first partition, a third partition under the second partition, a first flow path between the first partition and the second partition allowing a first gas to be introduced therein, a second flow path between the second partition and the third partition allowing a second gas to be introduced therein, a first piping extending from the second partition to reach below the third partition and being communicated with the first flow path, a second piping extending from the third partition to reach below the third partition and being communicated with the second flow path, and a convex portion provided on an outer circumferential surface of the first piping or an inner circumferential surface of the second piping protruding from one of the outer circumferential surface and the inner circumferential surface toward the other one.
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公开(公告)号：US11107892B2
公开(公告)日：2021-08-31
申请号：US16616780
申请日：2018-04-19
发明人： Keisuke Fukada , Naoto Ishibashi , Akira Bando , Masahiko Ito , Isaho Kamata , Hidekazu Tsuchida , Kazukuni Hara , Masami Naito , Hideyuki Uehigashi , Hiroaki Fujibayashi , Hirofumi Aoki , Toshikazu Sugiura , Katsumi Suzuki
摘要： A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 μm/h or more from an initial growth stage.
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5.发明授权Semiconductor structure, semiconductor device, and method for producing semiconductor structure 有权半导体结构，半导体器件和半导体结构的制造方法公开(公告)号：US09496345B2
公开(公告)日：2016-11-15
申请号：US14418897
申请日：2013-07-31
申请人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY , CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY
发明人： Kazutoshi Kojima , Shiyang Ji , Tetsuya Miyazawa , Hidekazu Tsuchida , Koji Nakayama , Tetsuro Hemmi , Katsunori Asano
IPC分类号： H01L29/15 , H01L29/10 , H01L29/66 , H01L29/16 , C30B25/20 , C30B29/36 , H01L21/02 , H01L29/04 , H01L29/167 , H01L29/739 , H01L21/04
CPC分类号： H01L29/1608 , C30B25/20 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/02576 , H01L21/02579 , H01L21/0259 , H01L21/02609 , H01L21/0262 , H01L21/046 , H01L29/04 , H01L29/045 , H01L29/167 , H01L29/66068 , H01L29/7393 , H01L29/7395
摘要： The present invention provides a semiconductor structure which includes at least a p-type silicon carbide single crystal layer having an α-type crystal structure, containing aluminum at impurity concentration of 1×1019 cm−3 or higher, and having thickness of 50 μm or greater. Further provided is a method for producing the semiconductor structure of the present invention which method includes at least epitaxial growth step of introducing silicon carbide source and aluminum source and epitaxially growing p-type silicon carbide single crystal layer over a base layer made of silicon carbide single crystal having α-type crystal structure, wherein the epitaxial growth step is performed at temperature conditions of from 1,500° C. to 1,700° C., and pressure conditions of from 5×103 Pa to 25×103 Pa.
摘要翻译： 本发明提供一种半导体结构，其至少包括具有α型晶体结构的p型碳化硅单晶层，其含有杂质浓度为1×1019 cm -3以上的铝，厚度为50μm，或 更大 还提供了一种制造本发明的半导体结构的方法，该方法至少包括将碳化硅源和铝源引入并外延生长的p型碳化硅单晶层的外延生长步骤在由碳化硅单体制成的基底层上 具有α型晶体结构的晶体，其中外延生长步骤在1500℃至1,700℃的温度条件下进行，压力条件为5×10 3 Pa至25×10 3 Pa。
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6.发明申请SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR STRUCTURE 有权半导体结构，半导体器件及其半导体结构的制造方法公开(公告)号：US20150214306A1
公开(公告)日：2015-07-30
申请号：US14418897
申请日：2013-07-31
申请人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY , CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY
发明人： Kazutoshi Kojima , Shiyang Ji , Tetsuya Miyazawa , Hidekazu Tsuchida , Koji Nakayama , Tetsuro Hemmi , Katsunori Asano
IPC分类号： H01L29/16 , H01L29/04 , C30B29/36 , H01L21/02 , C30B25/20 , H01L29/167 , H01L29/739
CPC分类号： H01L29/1608 , C30B25/20 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/02576 , H01L21/02579 , H01L21/0259 , H01L21/02609 , H01L21/0262 , H01L21/046 , H01L29/04 , H01L29/045 , H01L29/167 , H01L29/66068 , H01L29/7393 , H01L29/7395
摘要： The present invention provides a semiconductor structure which includes at least a p-type silicon carbide single crystal layer having an α-type crystal structure, containing aluminum at impurity concentration of 1×1019 cm−3 or higher, and having thickness of 50 μm or greater. Further provided is a method for producing the semiconductor structure of the present invention which method includes at least epitaxial growth step of introducing silicon carbide source and aluminum source and epitaxially growing p-type silicon carbide single crystal layer over a base layer made of silicon carbide single crystal having α-type crystal structure, wherein the epitaxial growth step is performed at temperature conditions of from 1,500° C. to 1,700° C., and pressure conditions of from 5×103 Pa to 25×103 Pa.
摘要翻译： 本发明提供一种半导体结构，其至少包括具有α型晶体结构的p型碳化硅单晶层，其含有杂质浓度为1×1019 cm -3以上的铝，厚度为50μm，或 更大 还提供了一种制造本发明的半导体结构的方法，该方法至少包括将碳化硅源和铝源引入并外延生长的p型碳化硅单晶层的外延生长步骤在由碳化硅单体制成的基底层上 具有α型晶体结构的晶体，其中外延生长步骤在1500℃至1,700℃的温度条件下进行，压力条件为5×10 3 Pa至25×10 3 Pa。
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公开(公告)号：US11846040B2
公开(公告)日：2023-12-19
申请号：US17123338
申请日：2020-12-16
IPC分类号： C30B29/36 , C30B25/20 , C01B32/956
CPC分类号： C30B29/36 , C30B25/20 , C01B32/956
摘要： A silicon carbide single crystal contains a heavy metal element having a specific gravity higher than a specific gravity of iron. An addition density of the heavy metal element at least in an outer peripheral portion of the silicon carbide single crystal is set to 1×1015 cm−3 or more.
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8.发明授权公开(公告)号：US09879359B2
公开(公告)日：2018-01-30
申请号：US14899273
申请日：2014-06-19
申请人： DENSO CORPORATION , CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY , NuFlare Technology, Inc. , TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： Hiroaki Fujibayashi , Masami Naito , Masahiko Ito , Isaho Kamata , Hidekazu Tsuchida , Hideki Ito , Ayumu Adachi , Koichi Nishikawa
IPC分类号： C30B23/06 , C30B25/14 , C30B29/36 , C30B25/16 , H01L21/02 , C23C16/32 , C23C16/455 , C23C16/458
CPC分类号： C30B25/14 , C23C16/325 , C23C16/45519 , C23C16/45548 , C23C16/45553 , C23C16/45574 , C23C16/45587 , C23C16/4584 , C23C16/4586 , C30B25/165 , C30B29/36 , H01L21/02529 , H01L21/02576 , H01L21/02579 , H01L21/02598 , H01L21/0262
摘要： In a silicon carbide semiconductor film forming apparatus, first to third gasses are introduced into first to third separation chambers through first to third inlets, respectively. The first and second gasses are silicon raw material including gas and carbon raw material including gas, and the third gas does not include silicon and carbon. The first and second gasses are independently supplied to growth space through first and second supply paths extending from the first and second separation chambers, respectively. The third gas is introduced through a third supply path from the third separation chamber between the first and second gasses.
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公开(公告)号：US11906569B2
公开(公告)日：2024-02-20
申请号：US17519679
申请日：2021-11-05
申请人： SHOWA DENKO K.K.
发明人： Koichi Murata , Isaho Kamata , Hidekazu Tsuchida , Akira Miyasaka
IPC分类号： G01R1/06 , G01R31/26 , H01L21/66 , G01R1/067 , C30B29/36 , C23C16/32 , C23C16/52 , C30B25/16 , G01R31/265 , C30B35/00
CPC分类号： G01R31/2601 , C23C16/325 , C23C16/52 , C30B25/16 , C30B29/36 , G01R1/06783 , G01R31/2648 , G01R31/2656 , H01L22/20 , C30B35/00
摘要： A semiconductor wafer evaluation apparatus brings a contact maker (mercury liquefied at room temperature), as a Schottky electrode, into contact with a semiconductor wafer, intermittently applies a voltage from a pulse power supply, and evaluates the state (kinds, density) of point defects by an evaluation means based on the status of the electrostatic capacity of the semiconductor wafer. In this manner, the state (kinds, density) of the point defects in the plane of a large-diameter semiconductor wafer is directly evaluated using a large table.
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公开(公告)号：US11600538B2
公开(公告)日：2023-03-07
申请号：US17456506
申请日：2021-11-24
申请人： SHOWA DENKO K.K.
摘要： A SiC epitaxial wafer according to an embodiment includes: a SiC substrate; and a SiC epitaxial layer formed on a first surface of the SiC substrate. The in-plane uniformity of a density of Z1/2 centers of the SiC epitaxial layer is 5% or less.
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