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公开(公告)号:US20180374721A1
公开(公告)日:2018-12-27
申请号:US16118734
申请日:2018-08-31
申请人: NUFLARE TECHNOLOGY, INC. , SHOWA DENKO K.K. , CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY
发明人: Kunihiko Suzuki , Naohisa Ikeya , Keisuke Fukada , Masahiko Ito , Isaho Kamata , Hidekazu Tsuchida , Hiroaki Fujibayashi , Hideyuki Uehigashi , Masami Naito , Kazukuni Hara , Hirofumi Aoki , Takahiro Kozawa
IPC分类号: H01L21/67 , H01L21/205 , C23C16/455
摘要: A supply part includes a first partition, a second partition under the first partition, a third partition under the second partition, a first flow path between the first partition and the second partition allowing a first gas to be introduced therein, a second flow path between the second partition and the third partition allowing a second gas to be introduced therein, a first piping extending from the second partition to reach below the third partition and being communicated with the first flow path, a second piping extending from the third partition to reach below the third partition and being communicated with the second flow path, and a convex portion provided on an outer circumferential surface of the first piping or an inner circumferential surface of the second piping protruding from one of the outer circumferential surface and the inner circumferential surface toward the other one.
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公开(公告)号:US11107892B2
公开(公告)日:2021-08-31
申请号:US16616780
申请日:2018-04-19
发明人: Keisuke Fukada , Naoto Ishibashi , Akira Bando , Masahiko Ito , Isaho Kamata , Hidekazu Tsuchida , Kazukuni Hara , Masami Naito , Hideyuki Uehigashi , Hiroaki Fujibayashi , Hirofumi Aoki , Toshikazu Sugiura , Katsumi Suzuki
摘要: A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 μm/h or more from an initial growth stage.
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公开(公告)号:US10896831B2
公开(公告)日:2021-01-19
申请号:US16118734
申请日:2018-08-31
申请人: NUFLARE TECHNOLOGY, INC. , SHOWA DENKO K.K. , CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY
发明人: Kunihiko Suzuki , Naohisa Ikeya , Keisuke Fukada , Masahiko Ito , Isaho Kamata , Hidekazu Tsuchida , Hiroaki Fujibayashi , Hideyuki Uehigashi , Masami Naito , Kazukuni Hara , Hirofumi Aoki , Takahiro Kozawa
IPC分类号: C23C16/40 , H01L21/67 , H01L21/205 , C23C16/455 , B01F3/02 , H01L21/02
摘要: A supply part includes a first partition, a second partition under the first partition, a third partition under the second partition, a first flow path between the first partition and the second partition allowing a first gas to be introduced therein, a second flow path between the second partition and the third partition allowing a second gas to be introduced therein, a first piping extending from the second partition to reach below the third partition and being communicated with the first flow path, a second piping extending from the third partition to reach below the third partition and being communicated with the second flow path, and a convex portion provided on an outer circumferential surface of the first piping or an inner circumferential surface of the second piping protruding from one of the outer circumferential surface and the inner circumferential surface toward the other one.
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公开(公告)号:US10262863B2
公开(公告)日:2019-04-16
申请号:US15534317
申请日:2015-12-08
发明人: Keisuke Fukada , Masahiko Ito , Isaho Kamata , Hidekazu Tsuchida , Hideyuki Uehigashi , Hiroaki Fujibayashi , Masami Naito , Kazukuni Hara , Takahiro Kozawa , Hirofumi Aoki
IPC分类号: H01L21/205 , C23C16/32 , C30B25/14 , C23C16/42 , C23C16/455 , C30B29/36 , C30B25/18 , C30B25/20 , H01L21/02
摘要: A method for manufacturing a SiC epitaxial wafer according to one aspect of the present invention includes separately introducing, into a reaction space for SiC epitaxial growth, a basic N-based gas composed of molecules containing an N atom within the molecular structure but having neither a double bond nor a triple bond between nitrogen atoms, and a Cl-based gas composed of molecules containing a Cl atom within the molecular structure, and mixing the N-based gas and the Cl-based gas at a temperature equal to or higher than the boiling point or sublimation temperature of a solid product generated by mixing the N-based gas and the Cl-based gas.
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