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    LOW NOISE AMPLIFIER TRANSISTORS WITH DECREASED NOISE FIGURE AND LEAKAGE IN SILICON-ON-INSULATOR TECHNOLOGY
    12.
    发明申请
    LOW NOISE AMPLIFIER TRANSISTORS WITH DECREASED NOISE FIGURE AND LEAKAGE IN SILICON-ON-INSULATOR TECHNOLOGY 有权

    公开(公告)号：US20210184046A1

    公开(公告)日：2021-06-17

    申请号：US17187993

    申请日：2021-03-01

    Applicant: SKYWORKS SOLUTIONS, INC.

    Inventor： Oleksandr Gorbachov ,  Lisette L. Zhang ,  Lothar Musiol

    IPC: H01L29/786 ,  H01L27/13 ,  H01L29/06 ,  H01L29/10

    Abstract: A metal oxide semiconductor field effect transistor preferably fabricated with a silicon-on-insulator process has a first semiconductor region and a second semiconductor region in a spaced relationship thereto A body structure is defined by a channel segment between the first semiconductor region and the second semiconductor region, and a first extension segment structurally contiguous with the channel segment. A shallow trench isolation structure surrounds the first semiconductor region, the second semiconductor region, and the body structure, with a first extension interface being defined between the shallow trench isolation structure and the first extension segment of the body structure to reduce leakage current flowing from the second semiconductor region to the first semiconductor region through a parasitic path of the body structure.

    Low noise amplifier transistors with decreased noise figure and leakage in silicon-on-insulator technology
    17.
    发明授权
    Low noise amplifier transistors with decreased noise figure and leakage in silicon-on-insulator technology 有权

    公开(公告)号：US11552196B2

    公开(公告)日：2023-01-10

    申请号：US17187993

    申请日：2021-03-01

    Applicant: SKYWORKS SOLUTIONS, INC.

    Inventor： Oleksandr Gorbachov ,  Lisette L. Zhang ,  Lothar Musiol

    IPC: H01L29/786 ,  H01L27/13 ,  H01L29/06 ,  H01L29/10

    Abstract: A metal oxide semiconductor field effect transistor preferably fabricated with a silicon-on-insulator process has a first semiconductor region and a second semiconductor region in a spaced relationship thereto A body structure is defined by a channel segment between the first semiconductor region and the second semiconductor region, and a first extension segment structurally contiguous with the channel segment. A shallow trench isolation structure surrounds the first semiconductor region, the second semiconductor region, and the body structure, with a first extension interface being defined between the shallow trench isolation structure and the first extension segment of the body structure to reduce leakage current flowing from the second semiconductor region to the first semiconductor region through a parasitic path of the body structure.

    Coupled Resonator On-Die Filters for WiFi Applications
    18.
    发明申请
    Coupled Resonator On-Die Filters for WiFi Applications 审中-公开

    公开(公告)号：US20200076393A1

    公开(公告)日：2020-03-05

    申请号：US16679625

    申请日：2019-11-11

    Applicant: Skyworks Solutions, Inc.

    Inventor： Oleksandr Gorbachov ,  Lisette L. Zhang ,  Huan Zhao ,  Lothar Musiol

    IPC: H03H7/09 ,  H03H7/01

    Abstract: A radio frequency (RF) filter circuit for rejecting one or more spurious components of an input signal has a first resonator circuit including a first capacitor and a first coupled inductor pair of a first inductor and a second inductor, and a second resonator circuit with a second capacitor and a second coupled inductor pair of a third inductor and a fourth inductor. First and second resonator coupling capacitors are connected to the first resonator circuit and the second resonator circuit. A first port and a second port are connected to the first resonator circuit and the second resonator, with the filtered signal of the input signal passed through both the first resonator circuit and the second resonator circuit being output.

    RF power amplifiers with diode linearizer
    19.
    发明授权
    RF power amplifiers with diode linearizer 有权

    公开(公告)号：US10574190B2

    公开(公告)日：2020-02-25

    申请号：US15148167

    申请日：2016-05-06

    Applicant: SKYWORKS SOLUTIONS, INC.

    Inventor： Oleksandr Gorbachov ,  Lisette L. Zhang ,  Lothar Musiol

    IPC: H03F1/30 ,  H03F1/32 ,  H03F3/193 ,  H03F1/34

    Abstract: A radio frequency (RF) power amplifier circuit with a diode linearizer circuit. The power amplifier circuit has an input and an output, as well as a power amplifier transistor with a first terminal connected to the input, a second terminal connected to the output, and a third terminal. The linearizer circuit is connected to the third terminal and to ground, and has a non-linear current-voltage curve as well as a non-linear capacitance. The linearizer circuit reduces inter-modulation products in a current through the power amplifier transistor from the second terminal to the third terminal that corresponds to an input signal applied to the input.

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