公开(公告)号：US11171256B2

公开(公告)日：2021-11-09

申请号：US16352029

申请日：2019-03-13

Applicant: Soitec

Inventor： Jean-Marc Bethoux ,  Morgane Logiou ,  Raphaél Caulmilone

IPC: H01L33/00 ,  H01L33/06 ,  H01L27/15 ,  H01L31/18 ,  H01L33/32 ,  H01L21/02 ,  H01L25/075 ,  H01L33/02

Abstract: A method for manufacturing a plurality of crystalline semiconductor islands having a variety of lattice parameters includes the following steps: providing a relaxation substrate that comprises a medium, a flow layer disposed on the medium and, a plurality of strained crystalline semiconductor islands having an initial lattice parameter located on the flow layer, a first group of islands having a first lattice parameter and a second group of islands having a second lattice parameter that is different from the first; and heat treating the relaxation substrate at a relaxation temperature greater than or equal to the glass transition temperature of the flow layer to cause differentiated lateral expansion of the islands of the first and second group. The lattice parameter of the relaxed islands of the first group and the relaxed islands of the second group then have different values.

公开(公告)号：US09679777B2

公开(公告)日：2017-06-13

申请号：US14909969

申请日：2014-08-05

Applicant: Soitec

Inventor： Yann Sinquin ,  Jean-Marc Bethoux ,  Oleg Kononchuk

IPC: H01L21/00 ,  H01L21/268 ,  H01L31/0687 ,  H01L21/78 ,  H01L29/20 ,  H01L33/00

CPC classification number: H01L21/268 ,  H01L21/7806 ,  H01L29/20 ,  H01L29/2003 ,  H01L31/06875 ,  H01L33/0079

Abstract: A method for separating a structure from a substrate through electromagnetic irradiations (EI) belonging to a spectral range comprises the steps of a) providing the substrate, b) forming an absorbent separation layer on the substrate, c) forming the structure to be separated on the separation layer, d) exposing the separation layer to the electromagnetic irradiations (EI) via the substrate such that the separation layer breaks down under the effect of the heat stemming from the absorption, the method being notable in that it comprises a step b1) of forming a transparent thermal barrier layer on the separation layer, the exposure period and the thickness of the thermal barrier layer being adapted such that the temperature of the structure to be separated remains below a threshold during the exposure period, beyond which threshold, faults are likely to appear in the structure.

公开(公告)号：US11600766B2

公开(公告)日：2023-03-07

申请号：US16064420

申请日：2016-12-21

Applicant: Soitec

Inventor： Bruno Ghyselen ,  Ionut Radu ,  Jean-Marc Bethoux

IPC: H01L41/312 ,  H01L41/319 ,  H03H3/02 ,  H01L41/187 ,  C30B25/18 ,  C30B29/22 ,  H01L41/08 ,  H01L41/09 ,  H01L41/335 ,  H03H3/08 ,  H03H9/25 ,  H03H9/54 ,  H03H9/64 ,  H01L41/316 ,  C30B29/30

Abstract: A method for manufacturing a monocrystalline piezoelectric material layer includes providing a donor substrate made of the piezoelectric material, providing a receiving substrate, transferring a so-called “seed layer” of the donor substrate onto the receiving substrate, and using epitaxy of the piezoelectric material on the seed layer until the desired thickness for the monocrystalline piezoelectric layer is obtained.

公开(公告)号：US11081521B2

公开(公告)日：2021-08-03

申请号：US16352085

申请日：2019-03-13

Applicant: Soitec

Inventor： Jean-Marc Bethoux

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/32 ,  H01L33/06 ,  H01L33/12 ,  H01L21/02 ,  H01L25/075 ,  H01L33/02

Abstract: A method for manufacturing a plurality of crystalline semiconductor islands having different lattice parameters includes providing a relaxation substrate comprising a support and a flow layer on the support that includes first and second groups of blocks having different viscosities at a relaxation temperature. The relaxation substrate also comprises a plurality of strained crystalline semiconductor islands on the flow layer, the islands of a first group being located on the first group of blocks and islands of a second group being located on the second group of blocks. The relaxation substrate is then heat treated at a relaxation temperature higher than or equal to the glass transition temperature of at least one block of the flow layer to cause differentiated lateral expansion of the first and second groups of islands such that the first and second groups of relaxed islands then have different lattice parameters.

公开(公告)号：US20200044140A1

公开(公告)日：2020-02-06

申请号：US16496893

申请日：2018-03-27

Applicant: Soitec

Inventor： Jean-Marc Bethoux ,  Yann Sinquin ,  Damien Radisson

IPC: H01L41/253 ,  H03H3/08 ,  H03H9/02 ,  H01L41/08 ,  H01L41/319

Abstract: A method for adjusting the stress state of a piezoelectric film having a first stress state at room temperature includes a step of forming an assembly including a carrier having a thermal expansion coefficient, a compliant layer placed on the carrier, and the piezoelectric film placed on the compliant layer, the piezoelectric film having a thermal expansion coefficient different from that of the carrier. The method also includes a step of heat treating the assembly, in which the assembly is heated to a treatment temperature above the glass transition temperature of the compliant layer. The present disclosure also relates to a process for fabricating an acoustic wave device comprising the piezoelectric layer the stress state of which was adjusted as described herein.

公开(公告)号：US20190390366A1

公开(公告)日：2019-12-26

申请号：US16481767

申请日：2018-01-31

Applicant: Soitec

Inventor： Bruno Ghyselen ,  Jean-Marc Bethoux

IPC: C30B25/18 ,  C30B29/02 ,  C30B29/66

Abstract: A process for manufacturing a two-dimensional film of a group IV material having a hexagonal crystalline structure, in particular, graphene, comprises formation of a growth substrate, comprising the transfer of a single-crystal metal film suitable for the growth of the two-dimensional film on a support substrate, and epitaxial growth of the two-dimensional film on the metal film of the substrate.

公开(公告)号：US20190288157A1

公开(公告)日：2019-09-19

申请号：US16352029

申请日：2019-03-13

Applicant: Soitec

Inventor： Jean-Marc Bethoux ,  Morgane Logiou ,  Raphaél Caulmilone

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L27/15 ,  H01L31/18

Abstract: A method for manufacturing a plurality of crystalline semiconductor islands having a variety of lattice parameters includes the following steps: providing a relaxation substrate that comprises a medium, a flow layer disposed on the medium and, a plurality of strained crystalline semiconductor islands having an initial lattice parameter located on the flow layer, a first group of islands having a first lattice parameter and a second group of islands having a second lattice parameter that is different from the first; and heat treating the relaxation substrate at a relaxation temperature greater than or equal to the glass transition temperature of the flow layer to cause differentiated lateral expansion of the islands of the first and second group. The lattice parameter of the relaxed islands of the first group and the relaxed islands of the second group then have different values.

公开(公告)号：US12087615B2

公开(公告)日：2024-09-10

申请号：US17805614

申请日：2022-06-06

Applicant: Soitec

Inventor： Bruno Ghyselen ,  Jean-Marc Bethoux

IPC: H01L21/762 ,  H10N30/073

CPC classification number: H01L21/76254 ,  H10N30/073

Abstract: A method for manufacturing a film on a support having a non-flat surface comprises: providing a donor substrate having a non-flat surface, forming an embrittlement zone in the donor substrate so as to delimit the film to be transferred, forming the support by deposition on the non-flat surface of the film to be transferred, and detaching the donor substrate along the embrittlement zone so as to transfer the film onto the support.

公开(公告)号：US11913134B2

公开(公告)日：2024-02-27

申请号：US16481767

申请日：2018-01-31

Applicant: Soitec

Inventor： Bruno Ghyselen ,  Jean-Marc Bethoux

IPC: C30B25/18 ,  C30B29/02 ,  C30B29/66

CPC classification number: C30B25/186 ,  C30B29/02 ,  C30B29/66

Abstract: A process for manufacturing a two-dimensional film of a group IV material having a hexagonal crystalline structure, in particular, graphene, comprises formation of a growth substrate, comprising the transfer of a single-crystal metal film suitable for the growth of the two-dimensional film on a support substrate, and epitaxial growth of the two-dimensional film on the metal film of the substrate.

公开(公告)号：US20230075685A1

公开(公告)日：2023-03-09

申请号：US18049529

申请日：2022-10-25

Applicant: Soitec

Inventor： Bruno Ghyselen ,  Jean-Marc Bethoux

IPC: H01L41/313 ,  H01L21/265 ,  H01L41/187

Abstract: A method for manufacturing a film, notably monocrystalline, on a flexible sheet, comprises the following steps: providing a donor substrate, forming an embrittlement zone in the donor substrate so as to delimit the film, forming the flexible sheet by deposition over the surface of the film, and detaching the donor substrate along the embrittlement zone so as to transfer the film onto the flexible sheet.