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    Device and method of detecting TSH
    16.
    发明授权
    Device and method of detecting TSH 有权

    公开(公告)号：US10029254B2

    公开(公告)日：2018-07-24

    申请号：US14869718

    申请日：2015-09-29

    Applicant: STMicroelectronics S.r.l.

    Inventor： Ubaldo Mastromatteo ,  Gabriele Barlocchi ,  Flavio Francesco Villa

    IPC: G01N5/02 ,  B01L3/00 ,  G01N33/543 ,  G01N33/76 ,  G01N29/02 ,  G01N35/00

    Abstract: A device for detecting the concentration of biological materials is formed in a body having a plurality of fluidic paths connectable to a multi-microbalance structure carrying a plurality of microbalances, each microbalance having a sensitive portion facing a reaction chamber. The body and the multi-microbalance structure are configured to be mechanically coupled together and each microbalance is configured to be coupled to a respective fluidic path. Each fluidic path includes an inlet, a duct and a liquid waste, each duct being configured to be coupled with a respective reaction chamber. The plurality of fluidic paths and microbalances form at least one first and one second reference cells and one first sample cell.

    Method of fabrication of an integrated thermoelectric converter, and integrated thermoelectric converter thus obtained
    19.
    发明授权
    Method of fabrication of an integrated thermoelectric converter, and integrated thermoelectric converter thus obtained 有权

    公开(公告)号：US11696504B2

    公开(公告)日：2023-07-04

    申请号：US17321252

    申请日：2021-05-14

    Applicant: STMICROELECTRONICS S.r.l.

    Inventor： Paolo Ferrari ,  Flavio Francesco Villa ,  Lucia Zullino ,  Andrea Nomellini ,  Luca Seghizzi ,  Luca Zanotti ,  Bruno Murari ,  Martina Scolari

    IPC: H10N10/855 ,  H10N10/01 ,  H10N10/17

    CPC classification number: H10N10/855 ,  H10N10/01 ,  H10N10/17

    Abstract: A method of fabricating a thermoelectric converter that includes providing a layer of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer thickness, from the first surface to the second surface; forming electrically conductive interconnections in correspondence of the first surface and of the second surface of the layer of Silicon-based material, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectrically active elements, and forming an input electrical terminal and an output electrical terminal electrically connected to the electrically conductive interconnections, wherein the first thermoelectric semiconductor material and the second thermoelectric semiconductor material comprise Silicon-based materials selected among porous Silicon or polycrystalline SiGe or polycrystalline Silicon.

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