公开(公告)号：US11296205B2

公开(公告)日：2022-04-05

申请号：US16591312

申请日：2019-10-02

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Alexis Gauthier ,  Pascal Chevalier

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/08 ,  H01L29/732 ,  H01L21/265

Abstract: A bipolar transistor includes a collector. The collector is formed by: a first portion of the collector which extends under an insulating trench, and a second portion of the collector which crosses through the insulating trench. The first and second portions of the collector are in physical contact.

公开(公告)号：US11276752B2

公开(公告)日：2022-03-15

申请号：US16995054

申请日：2020-08-17

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alexis Gauthier ,  Pascal Chevalier ,  Gregory Avenier

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/732

Abstract: A device including a transistor is fabricated by forming a first part of a first region of the transistor through the implantation of dopants through a first opening. The second region of the transistor is then formed in the first opening by epitaxy.

公开(公告)号：US11996465B2

公开(公告)日：2024-05-28

申请号：US17486000

申请日：2021-09-27

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Alexis Gauthier ,  Pascal Chevalier

IPC: H01L29/66 ,  H01L21/22 ,  H01L29/06 ,  H01L29/73

CPC classification number: H01L29/66234 ,  H01L21/22 ,  H01L29/0649 ,  H01L29/73

Abstract: A bipolar transistor includes a collector. The collector is produced by a process wherein a first substantially homogeneously doped layer is formed at the bottom of a cavity. A second gradually doped layer is then formed by diffusion of dopants of the first substantially homogeneously doped layer.

公开(公告)号：US11776995B2

公开(公告)日：2023-10-03

申请号：US17734486

申请日：2022-05-02

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alexis Gauthier ,  Pascal Chevalier ,  Gregory Avenier

IPC: H01L29/06 ,  H01L21/8222 ,  H01L29/66 ,  H01L29/732

CPC classification number: H01L29/0642 ,  H01L21/8222 ,  H01L29/6634 ,  H01L29/7322

Abstract: A transistor is produced by forming a first part of a first region of the transistor in a semiconductor substrate by implanting dopants through an opening in an isolating trench formed at an upper surface of the semiconductor substrate. A second region of the transistor in the opening by epitaxy.

公开(公告)号：US11038017B2

公开(公告)日：2021-06-15

申请号：US16279361

申请日：2019-02-19

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alexis Gauthier ,  Julien Borrel

IPC: H01L29/08 ,  H01L29/06 ,  H01L29/167 ,  H01L29/66 ,  H01L29/737 ,  H01L29/732 ,  H01L21/265

Abstract: A bipolar junction transistor includes an extrinsic collector region buried in a semiconductor substrate under an intrinsic collector region. Carbon-containing passivating regions are provided to delimit the intrinsic collector region. An insulating layer on the intrinsic collector region includes an opening within which an extrinsic base region is provided. A semiconductor layer overlies the insulating layer, is in contact with the extrinsic base region, and includes an opening with insulated sidewalls. The collector region of the transistor is provided between the insulated sidewalls.

公开(公告)号：US10453919B2

公开(公告)日：2019-10-22

申请号：US15803959

申请日：2017-11-06

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Pascal Chevalier ,  Alexis Gauthier

IPC: H01L29/08 ,  H01L29/66 ,  H01L29/732 ,  H01L29/737

Abstract: A bipolar transistor is supported by a single-crystal silicon substrate including a collector connection region. A first epitaxial region forms a collector region doped with a first conductivity type on the collector connection region. The collector region includes a counter-doped region of a second conductivity type. A second epitaxial region forms a base region of a second conductivity type on the first epitaxial region. Deposited semiconductor material forms an emitter region of the first conductivity type on the second epitaxial region. The collector region, base region and emitter region are located within an opening formed in a stack of insulating layers that includes a sacrificial layer. The sacrificial layer is selectively removed to expose a side wall of the base region. Epitaxial growth from the exposed sidewall forms a base contact region.

公开(公告)号：US10186605B1

公开(公告)日：2019-01-22

申请号：US15783109

申请日：2017-10-13

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alexis Gauthier ,  Fabien Deprat ,  Yves Campidelli

IPC: H01L29/732 ,  H01L29/66 ,  H01L29/737 ,  H01L27/06 ,  H01L21/8249 ,  H01L29/417

Abstract: A bipolar transistor is supported by a single-crystal silicon substrate including a collector contact region. A cyclical epitaxy process is performed to provide a collector region of a first conductivity type on the collector contact region that is laterally separated from a silicon layer by an air gap. A second epitaxial region forms a base region of a second conductivity type. Deposited semiconductor material forms an emitter region of the first conductivity type. The collector region, base region and emitter region are located within an opening formed in a stack of insulating layers that includes a sacrificial layer. The sacrificial layer is selectively removed to expose a side wall of the base region. Epitaxial growth from the exposed sidewall forms a base contact region.

公开(公告)号：US20180277659A1

公开(公告)日：2018-09-27

申请号：US15707258

申请日：2017-09-18

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alexis Gauthier ,  Guillaume C. Ribes

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/78 ,  H01L29/12 ,  H01L49/00

CPC classification number: H01L29/66666 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/28008 ,  H01L21/308 ,  H01L29/127 ,  H01L29/42376 ,  H01L29/7827 ,  H01L49/006

Abstract: A vertical transistor includes two portions of a gate conductor that extend within a layer of insulator. An opening extending through the later of insulator includes source, channel and drain regions form by epitaxy operations. A thickness of the portions of the gate conductor decreases in the vicinity of the channel region.

公开(公告)号：US12125894B2

公开(公告)日：2024-10-22

申请号：US18383926

申请日：2023-10-26

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics France

Inventor： Alexis Gauthier ,  Pascal Chevalier

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/08 ,  H01L29/732 ,  H01L21/265

CPC classification number: H01L29/66272 ,  H01L29/0649 ,  H01L29/0821 ,  H01L29/732 ,  H01L21/26513

Abstract: A bipolar transistor includes a collector. The collector is formed by: a first portion of the collector which extends under an insulating trench, and a second portion of the collector which crosses through the insulating trench. The first and second portions of the collector are in physical contact.

公开(公告)号：US11837647B2

公开(公告)日：2023-12-05

申请号：US17685780

申请日：2022-03-03

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Alexis Gauthier ,  Pascal Chevalier

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/08 ,  H01L29/732 ,  H01L21/265

CPC classification number: H01L29/66272 ,  H01L29/0649 ,  H01L29/0821 ,  H01L29/732 ,  H01L21/26513

Abstract: A bipolar transistor includes a collector. The collector is formed by: a first portion of the collector which extends under an insulating trench, and a second portion of the collector which crosses through the insulating trench. The first and second portions of the collector are in physical contact.