公开(公告)号：US09557487B2

公开(公告)日：2017-01-31

申请号：US14672378

申请日：2015-03-30

Applicant: STMICROELECTRONICS (CROLLES 2) SAS ,  STMICROELECTRONICS S.r.l.

Inventor： Antonio Fincato ,  Charles Baudot

IPC: H04J14/02 ,  G02B6/293 ,  G02F1/01 ,  G02B6/12

CPC classification number: G02B6/12033 ,  G02B6/12011 ,  G02B6/12014 ,  G02B6/12016 ,  G02B6/12026 ,  G02B6/29307 ,  G02B6/2938 ,  G02F1/011 ,  G02F1/0115 ,  G02F2201/58 ,  G02F2203/50 ,  H04J14/02

Abstract: An arrayed waveguide grating multiplexer/demultiplexer includes an array of optical waveguides ordered in sequence from a shortest waveguide up to a longest waveguide, and identical phase shifters configured to be controlled by a same control signal. Each phase shifter increases/decreases an optical path of an optical waveguide by the same quantity based on the control signal.

Abstract translation: 阵列波导光栅复用器/解复用器包括从最短波导到最长波导顺序排列的光波导阵列，以及被配置为由相同控制信号控制的相同移相器。 每个移相器基于控制信号增加/减少光波导的光路相同量。

公开(公告)号：US20150309258A1

公开(公告)日：2015-10-29

申请号：US14672378

申请日：2015-03-30

Applicant: STMICROELECTRONICS (CROLLES 2) SAS ,  STMICROELECTRONICS S.r.l.

Inventor： Antonio FINCATO ,  Charles Baudot

IPC: G02B6/293 ,  H04J14/02 ,  G02F1/01

CPC classification number: G02B6/12033 ,  G02B6/12011 ,  G02B6/12014 ,  G02B6/12016 ,  G02B6/12026 ,  G02B6/29307 ,  G02B6/2938 ,  G02F1/011 ,  G02F1/0115 ,  G02F2201/58 ,  G02F2203/50 ,  H04J14/02

Abstract: An arrayed waveguide grating multiplexer/demultiplexer includes an array of optical waveguides ordered in sequence from a shortest waveguide up to a longest waveguide, and identical phase shifters configured to be controlled by a same control signal. Each phase shifter increases/decreases an optical path of an optical waveguide by the same quantity based on the control signal.

Abstract translation: 阵列波导光栅复用器/解复用器包括从最短波导到最长波导顺序排列的光波导阵列，以及被配置为由相同控制信号控制的相同移相器。 每个移相器基于控制信号增加/减少光波导的光路相同量。

公开(公告)号：US11837678B2

公开(公告)日：2023-12-05

申请号：US17486219

申请日：2021-09-27

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Charles Baudot ,  Sebastien Cremer ,  Nathalie Vulliet ,  Denis Pellissier-Tanon

IPC: H01L27/146 ,  H01L31/109 ,  H01L31/18 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/105

CPC classification number: H01L31/109 ,  H01L31/028 ,  H01L31/02327 ,  H01L31/105 ,  H01L31/1804

Abstract: A photodiode includes an active area formed by intrinsic germanium. The active area is located within a cavity formed in a silicon layer. The cavity is defined by opposed side walls which are angled relative to a direction perpendicular to a bottom surface of the silicon layer. The angled side walls support epitaxial growth of the intrinsic germanium with minimal lattice defects.

公开(公告)号：US11784275B2

公开(公告)日：2023-10-10

申请号：US17308651

申请日：2021-05-05

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Charles Baudot ,  Sebastien Cremer ,  Nathalie Vulliet ,  Denis Pellissier-Tanon

IPC: H01L33/00 ,  H01L31/105 ,  H01L31/0232 ,  G02B6/12 ,  H01L31/028

CPC classification number: H01L31/105 ,  G02B6/12004 ,  H01L31/028 ,  H01L31/02327

Abstract: A vertical photodiode includes an active area. The contacting pads for the diode terminals are laterally shifted away from the active area so as to not be located above or below the active area. The active area is formed in a layer of semiconductor material by a lower portion of a germanium area that is intrinsic and an upper portion of the germanium area that is doped with a first conductivity type. The vertical photodiode is optically coupled to a waveguide formed in the layer of semiconductor material.

公开(公告)号：US11327346B2

公开(公告)日：2022-05-10

申请号：US16539503

申请日：2019-08-13

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Charles Baudot

IPC: G02F1/025 ,  G02F1/01 ,  G02F1/017 ,  G02F1/225 ,  H01L21/02 ,  B82Y20/00

Abstract: In one embodiment, an electro-optical modulator includes a waveguide having a first major surface and a second major surface opposite the first major surface. A cavity is disposed in the waveguide. Multiple quantum wells are disposed in the cavity.

公开(公告)号：US20190018191A1

公开(公告)日：2019-01-17

申请号：US16133064

申请日：2018-09-17

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Sylvain Guerber ,  Charles Baudot ,  Florian Domengie

IPC: G02B6/122 ,  G02B6/43 ,  G02B6/30 ,  G02B6/26 ,  G02B6/14 ,  G02B6/138 ,  G02B6/13 ,  G02B6/126 ,  G02B6/12

Abstract: A photonic integrated circuit includes an optical coupling device situated between two successive interconnection metal levels. The optical coupling device includes a first optical portion that receives an optical signal having a transverse electric component in a fundamental mode and a transverse magnetic component. A second optical portion converts the transverse magnetic component of the optical signal into a converted transverse electric component in a higher order mode. A third optical portion separates the transverse electric component from the converted transverse electric component and switches the higher order mode to the fundamental mode. A fourth optical portion transmits the transverse electric component to one waveguide and transmits the converted transverse electric component to another waveguide.

公开(公告)号：US10126497B2

公开(公告)日：2018-11-13

申请号：US15377848

申请日：2016-12-13

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Frederic Boeuf ,  Charles Baudot

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/126 ,  G02B6/27

Abstract: A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further includes an optical coupler configured for receiving a light signal. The first substrate and dielectric layer form a reflective element located below and opposite the grating coupler in order to reflect at least one part of the light signal.

公开(公告)号：US20180239088A1

公开(公告)日：2018-08-23

申请号：US15692571

申请日：2017-08-31

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Sylvain Guerber ,  Charles Baudot ,  Florian Domengie

IPC: G02B6/122 ,  G02B6/26 ,  G02B6/30 ,  G02B6/43 ,  G02B6/138 ,  G02B6/13 ,  G02B6/14

CPC classification number: G02B6/1228 ,  G02B6/12002 ,  G02B6/126 ,  G02B6/13 ,  G02B6/138 ,  G02B6/14 ,  G02B6/262 ,  G02B6/305 ,  G02B6/43

Abstract: A photonic integrated circuit includes an optical coupling device situated between two successive interconnection metal levels. The optical coupling device includes a first optical portion that receives an optical signal having a transverse electric component in a fundamental mode and a transverse magnetic component. A second optical portion converts the transverse magnetic component of the optical signal into a converted transverse electric component in a higher order mode. A third optical portion separates the transverse electric component from the converted transverse electric component and switches the higher order mode to the fundamental mode. A fourth optical portion transmits the transverse electric component to one waveguide and transmits the converted transverse electric component to another waveguide.

公开(公告)号：US20170336560A1

公开(公告)日：2017-11-23

申请号：US15377848

申请日：2016-12-13

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Frederic Boeuf ,  Charles Baudot

IPC: G02B6/12 ,  G02B6/126 ,  G02B6/27 ,  G02B6/122

CPC classification number: G02B6/12002 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/124 ,  G02B6/126 ,  G02B6/2773 ,  G02B6/30 ,  G02B6/34 ,  G02B6/4204 ,  G02B2006/12104 ,  G02B2006/12107 ,  G02B2006/12116 ,  G02B2006/12147

Abstract: A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further includes an optical coupler configured for receiving a light signal. The first substrate and dielectric layer form a reflective element located below and opposite the grating coupler in order to reflect at least one part of the light signal.

公开(公告)号：US20170059774A1

公开(公告)日：2017-03-02

申请号：US15051904

申请日：2016-02-24

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Charles Baudot

IPC: G02B6/122 ,  G02B6/12

CPC classification number: G02B6/122 ,  G02B6/12004 ,  G02B2006/12097 ,  G02B2006/121 ,  G02F1/025

Abstract: An integrated circuit includes an active device for confinement of a light flux that is formed in a semiconducting substrate. A confinement rib is separated from two doped zones by two trenches. Each doped zone includes a contacting zone on an upper face. Each trench widens from a bottom wall towards the upper face of the corresponding doped zone. The widening trenches present a sidewall having a tiered profile between the trench and the doped zone. An opposite sidewall presents a straight profile.

Abstract translation: 集成电路包括用于限制形成在半导体衬底中的光束的有源器件。 限制肋通过两个沟槽与两个掺杂区分离。 每个掺杂区包括在上表面上的接触区。 每个沟槽从底壁朝向相应掺杂区的上表面变宽。 加宽的沟槽具有在沟槽和掺杂区域之间具有分层轮廓的侧壁。 相对的侧壁呈直线轮廓。