公开(公告)号：US09664753B2

公开(公告)日：2017-05-30

申请号：US14637698

申请日：2015-03-04

Applicant: STMicroelectronics S.r.l.

Inventor： Giulio Ricotti ,  Marco Morelli ,  Marco Marchesi

IPC: G01R33/06 ,  G01R33/07 ,  G01R33/00

CPC classification number: G01R33/07 ,  G01R33/0017 ,  G01R33/0029 ,  G01R33/075

Abstract: A magnetic field sensor formed by a Hall cell having a first, second, third and fourth conduction nodes electrically coupled together by resistive paths. Flowing between the first and second conduction nodes is a control current. In the presence of a magnetic field, a difference of potential due to the Hall effect is generated between the third and fourth conduction nodes. An operational amplifier has an inverting input terminal coupled to the fourth conduction node, a non-inverting input terminal biased at the voltage at the third conduction node, and an output terminal coupled in feedback mode to the inverting input by a feedback resistor. The current generated in feedback through the feedback resistor generates a voltage indicating unbalancing, due to the Hall effect, between the third and fourth conductive nodes, and consequently indicates the intensity of the magnetic field that acts upon the Hall cell.

公开(公告)号：US20170125173A1

公开(公告)日：2017-05-04

申请号：US15164702

申请日：2016-05-25

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Mario Giovanni Scurati ,  Marco Morelli ,  Fulvio Vittorio Fontana

IPC: H01G11/18 ,  H01G11/52 ,  H01G11/78 ,  H01G11/22

CPC classification number: H01G11/18 ,  H01G11/08 ,  H01G11/14 ,  H01G11/22 ,  H01G11/52 ,  H01G11/78 ,  H01G11/82 ,  Y02E60/13

Abstract: A supercapacitor including: a shell; a chamber in the shell; a first electrode and a second electrode on respective walls of the chamber; and a separator arranged between the first electrode and the second electrode through the chamber. The separator includes a first perforated membrane and a second perforated membrane, which is movable with respect to the first membrane between a first position, in which the first membrane and the second membrane are separate and a second position, in which the first membrane and the second membrane are in contact and coupled for rendering the separator impermeable.

公开(公告)号：US20160072057A1

公开(公告)日：2016-03-10

申请号：US14938121

申请日：2015-11-11

Applicant: STMicroelectronics S.r.l.

Inventor： Dario Paci ,  Marco Morelli ,  Caterina Riva

IPC: H01L43/12 ,  G01R33/09 ,  H01L43/08 ,  G01R33/00

CPC classification number: H01L43/12 ,  G01R33/0052 ,  G01R33/09 ,  G01R33/096 ,  G01R33/098 ,  H01L27/22 ,  H01L43/08

Abstract: An integrated magnetoresistive device includes a substrate of semiconductor material that is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends within the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material includes at least one arm that extends in a transversal direction to the sensitivity plane and is vertically offset from the magnetoresistor. The concentrator concentrates deflects magnetic flux lines perpendicular to the sensitivity plane so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.

Abstract translation: 集成磁阻器件包括半导体材料的衬底，其在第一表面上被绝缘层覆盖。 铁磁材料的磁阻电阻在绝缘层内延伸并限定传感器的灵敏度平面。 铁磁材料的集中器包括沿横向方向延伸到灵敏度平面并且与磁电阻器垂直偏移的至少一个臂。 集中器集中使垂直于灵敏度平面的磁通线偏转，以产生指向与感光平面平行的方向的磁场分量。

公开(公告)号：US10796942B2

公开(公告)日：2020-10-06

申请号：US16105403

申请日：2018-08-20

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone Dario Mariani ,  Fabrizio Fausto Renzo Toia ,  Marco Sambi ,  Davide Giuseppe Patti ,  Marco Morelli ,  Giuseppe Barillaro

IPC: H01L29/78 ,  H01L21/762 ,  H01L21/02 ,  H01L21/306 ,  H01L29/06

Abstract: A technique to make silicon oxide regions from porous silicon and related semiconductor structures are disclosed. The porous silicon is made in situ by anodizing P doped silicon regions. Thus, the shape and profile of the oxide regions may be controlled by controlling the shape and profile of the P doped silicon regions.

公开(公告)号：US10128057B2

公开(公告)日：2018-11-13

申请号：US15164702

申请日：2016-05-25

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Mario Giovanni Scurati ,  Marco Morelli ,  Fulvio Vittorio Fontana

IPC: H01G9/00 ,  H01G9/02 ,  H01G11/14 ,  H01G11/52 ,  H01G11/22 ,  H01G11/78 ,  H01G11/18 ,  H01G9/145

Abstract: A supercapacitor including: a shell; a chamber in the shell; a first electrode and a second electrode on respective walls of the chamber; and a separator arranged between the first electrode and the second electrode through the chamber. The separator includes a first perforated membrane and a second perforated membrane, which is movable with respect to the first membrane between a first position, in which the first membrane and the second membrane are separate and a second position, in which the first membrane and the second membrane are in contact and coupled for rendering the separator impermeable.

公开(公告)号：US20160377691A1

公开(公告)日：2016-12-29

申请号：US15135793

申请日：2016-04-22

Applicant: STMicroelectronics S.r.l.

Inventor： Dario Paci ,  Marco Marchesi ,  Marco Morelli

IPC: G01R33/09

CPC classification number: G01R33/096 ,  G01R33/0011 ,  G01R33/025 ,  G01R33/07 ,  G01R33/09

Abstract: An integrated AMR magnetoresistive sensor has a magnetoresistor, a set/reset coil and a shielding region arranged on top of each other. The set/reset coil is positioned between the magnetoresistor and the shielding region. The magnetoresistor is formed by a magnetoresistive strip of an elongated shape having a length in a first direction parallel to the preferential magnetization direction and a width in a second direction perpendicular to the first direction. The set/reset coil has at least one stretch extending transversely to the magnetoresistive strip. The shielding region is a ferromagnetic material and has a width in the second direction greater than the width of the magnetoresistive strip so as to attenuate the external magnetic field traversing the magnetoresistive strip and increase the sensitivity scale of the magnetoresistive sensor.

Abstract translation: 一个集成的AMR磁阻传感器具有一个磁电阻，一组/复位线圈和一个彼此顶部布置的屏蔽区域。 设置/复位线圈位于磁电阻器和屏蔽区域之间。 磁阻电阻由具有平行于优先磁化方向的第一方向的长度和垂直于第一方向的第二方向的宽度的细长形状的磁阻带形成。 固定/复位线圈具有横向于磁阻带延伸的至少一个拉伸。 屏蔽区域是铁磁材料，并且具有大于磁阻带宽度的第二方向的宽度，以便衰减穿过磁阻带的外部磁场并增加磁阻传感器的灵敏度。

公开(公告)号：US20130242636A1

公开(公告)日：2013-09-19

申请号：US13782263

申请日：2013-03-01

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Alberto Pagani ,  Marco Morelli ,  Giulio Ricotti

IPC: G11C23/00

CPC classification number: G11C23/00 ,  G11C5/005 ,  G11C7/02 ,  G11C7/1048 ,  G11C7/12 ,  G11C11/50 ,  G11C29/12 ,  G11C2029/0409 ,  H01H1/0036 ,  H01H1/52 ,  H01H59/0009

Abstract: An electromechanical memory element includes a fixed body and a deformable element attached to the fixed body. An actuator causes a deformation of the deformable element from a first position (associated with a first logic state) to a second position (associated with a second logic state) where a mobile element makes contact with a fixed element. A programming circuit then causes a weld to be formed between the mobile element and the fixed element. The memory element is thus capable of associating the first and second positions with two different logic states. The weld may be selectively dissolved to return the deformable element back to the first position.

Abstract translation: 机电存储元件包括固定体和附接到固定体的可变形元件。 致动器使可变形元件从第一位置（与第一逻辑状态相关联）变形到移动元件与固定元件接触的第二位置（与第二逻辑状态相关联）。 然后编程电路在可移动元件和固定元件之间形成焊缝。 因此，存储元件能够将第一和第二位置与两个不同的逻辑状态相关联。 可以选择性地溶解焊缝以将可变形元件返回到第一位置。

公开(公告)号：US12046655B2

公开(公告)日：2024-07-23

申请号：US17161059

申请日：2021-01-28

Applicant: STMicroelectronics S.r.l.

Inventor： Davide Giuseppe Patti ,  Mario Giovanni Scurati ,  Marco Morelli

IPC: H01L29/45 ,  H01L21/285 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/45 ,  H01L21/28518 ,  H01L29/1095 ,  H01L29/66734 ,  H01L29/7813

Abstract: A vertical conduction electronic power device includes a body delimited by a first and a second surface and having an epitaxial layer of semiconductor material, and a substrate. The epitaxial layer is delimited by the first surface of the body and the substrate is delimited by the second surface of the body. The epitaxial layer houses at least a first and a second conduction region having a first type of doping and a plurality of insulated-gate regions, which extend within the epitaxial layer. The substrate has at least one silicide region, which extends starting from the second surface of the body towards the epitaxial layer.

公开(公告)号：US11737369B2

公开(公告)日：2023-08-22

申请号：US17343388

申请日：2021-06-09

Applicant: STMicroelectronics S.r.l.

Inventor： Dario Paci ,  Marco Morelli ,  Caterina Riva

IPC: G11B5/127 ,  H04R31/00 ,  H10N50/01 ,  B82Y25/00 ,  G01R33/09 ,  H10B61/00 ,  H10N59/00 ,  H10N50/10 ,  G01R33/00 ,  G01R33/02

CPC classification number: H10N50/01 ,  B82Y25/00 ,  G01R33/0011 ,  G01R33/0052 ,  G01R33/0206 ,  G01R33/09 ,  G01R33/093 ,  G01R33/096 ,  G01R33/098 ,  H10B61/00 ,  H10N50/10 ,  H10N59/00

Abstract: An integrated magnetoresistive device includes a substrate of semiconductor material that is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends within the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material includes at least one arm that extends in a transversal direction to the sensitivity plane and is vertically offset from the magnetoresistor. The concentrator concentrates deflects magnetic flux lines perpendicular to the sensitivity plane so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.

公开(公告)号：US10930799B2

公开(公告)日：2021-02-23

申请号：US16246945

申请日：2019-01-14

Applicant: STMicroelectronics S.r.l.

Inventor： Flavio Francesco Villa ,  Marco Morelli ,  Marco Marchesi ,  Simone Dario Mariani ,  Fabrizio Fausto Renzo Toia

IPC: H01L29/94 ,  H01L29/66 ,  H01L27/06 ,  H01L49/02 ,  H01L21/02

Abstract: A semiconductor body includes a front side and a back side and is configured to support an electronic circuit. A buried region is provided in the semiconductor body at a location between the electronic circuit and the back side. The buried region includes a layer of conductive material and a dielectric layer, where the dielectric layer is arranged between the layer of conductive material and the semiconductor body. A conductive path extends between the buried region and the front side to form a path for electrical access to the layer of conductive material. A capacitor is thus formed with the layer of conductive material providing a capacitor plate and the dielectric layer providing the capacitor dielectric. A further capacitor plate is provided by the semiconductor body, or by a further layer of conductive material in the buried region.