公开(公告)号：US10535767B2

公开(公告)日：2020-01-14

申请号：US16264384

申请日：2019-01-31

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Marco Sambi ,  Fabrizio Fausto Renzo Toia ,  Marco Marchesi ,  Marco Morelli ,  Riccardo Depetro ,  Giuseppe Barillaro ,  Lucanos Marsilio Strambini

IPC: H01L21/02 ,  H01L29/78 ,  H01L29/32 ,  H01L29/66 ,  H01L29/861 ,  H01L29/06 ,  H01L29/16 ,  H01L21/265 ,  H01L21/3063 ,  H01L21/308 ,  H01L21/762 ,  H01L29/08 ,  H01L29/36 ,  H01L29/417 ,  H03K17/687

Abstract: A process of forming integrated electronic device having a semiconductor body includes: forming a first electrode region having a first type of conductivity; forming a second electrode region having a second type of conductivity, which forms a junction with the first electrode region; and forming a nanostructured semiconductor region, which extends in one of the first and second electrode regions.

公开(公告)号：US20180061982A1

公开(公告)日：2018-03-01

申请号：US15457799

申请日：2017-03-13

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Marco Sambi ,  Fabrizio Fausto Renzo Toia ,  Marco Marchesi ,  Marco Morelli ,  Riccardo Depetro ,  Giuseppe Barillaro ,  Lucanos Marsilio Strambini

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/417 ,  H01L29/36 ,  H01L29/66 ,  H01L21/3063 ,  H01L21/265 ,  H01L21/308 ,  H01L21/02 ,  H01L29/08 ,  H01L21/762 ,  H03K17/687

CPC classification number: H01L29/7827 ,  H01L21/02233 ,  H01L21/02255 ,  H01L21/26513 ,  H01L21/3063 ,  H01L21/3081 ,  H01L21/76224 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0665 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/32 ,  H01L29/36 ,  H01L29/41741 ,  H01L29/66128 ,  H01L29/66666 ,  H01L29/66681 ,  H01L29/7816 ,  H01L29/8611 ,  H03K17/687

Abstract: An integrated electronic device having a semiconductor body including: a first electrode region having a first type of conductivity; and a second electrode region having a second type of conductivity, which forms a junction with the first electrode region. The integrated electronic device further includes a nanostructured semiconductor region, which extends in one of the first and second electrode regions.

公开(公告)号：US11282954B2

公开(公告)日：2022-03-22

申请号：US16664121

申请日：2019-10-25

Applicant: STMicroelectronics S.r.l.

Inventor： Marco Sambi ,  Michele Basso ,  Stefano Corona ,  Leonardo Di Biccari

IPC: H01L29/78 ,  H01L27/02 ,  H01L29/06 ,  H01L29/423

Abstract: A structural body made of semiconductor material includes an active area housing a drain region, a body region and a source region within the body region. An electrical-isolation trench extends in the structural body to surround the active area. A first PN-junction and a second PN-junction are integrated in the structural body between the active area and the trench, respectively located on opposite sides of the active area. The first and the second PN-junctions form a first diode and a second diode, with each diode having a respective cathode electrically coupled to the drain region of the MOSFET device and a respective anode electrically coupled to the source region of the MOSFET device.

公开(公告)号：US10825954B2

公开(公告)日：2020-11-03

申请号：US15983959

申请日：2018-05-18

Applicant: STMicroelectronics S.r.l.

Inventor： Marco Morelli ,  Fabrizio Fausto Renzo Toia ,  Giuseppe Barillaro ,  Marco Sambi

IPC: H01L33/14 ,  H01L33/34 ,  H01L33/00

Abstract: A light-emitting device may include a semiconductor body having a first conductivity type, with a front side and a back side. The light-emitting device may also include a porous-silicon region which extends in the semiconductor body at the front side, and a cathode region in direct lateral contact with the porous-silicon region. The light-emitting device may further include a barrier region of electrically insulating material, which extends in direct contact with the cathode region at the bottom side of the cathode region so that, in use, an electric current flows in the semiconductor body through lateral portions of the cathode region.

公开(公告)号：US20180269357A1

公开(公告)日：2018-09-20

申请号：US15983959

申请日：2018-05-18

Applicant: STMicroelectronics S.r.l.

Inventor： Marco Morelli ,  Fabrizio Fausto Renzo Toia ,  Giuseppe Barillaro ,  Marco Sambi

IPC: H01L33/34 ,  H01L33/14 ,  H01L33/00

Abstract: A light-emitting device may include a semiconductor body having a first conductivity type, with a front side and a back side. The light-emitting device may also include a porous-silicon region which extends in the semiconductor body at the front side, and a cathode region in direct lateral contact with the porous-silicon region. The light-emitting device may further include a barrier region of electrically insulating material, which extends in direct contact with the cathode region at the bottom side of the cathode region so that, in use, an electric current flows in the semiconductor body through lateral portions of the cathode region.

公开(公告)号：US10796942B2

公开(公告)日：2020-10-06

申请号：US16105403

申请日：2018-08-20

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone Dario Mariani ,  Fabrizio Fausto Renzo Toia ,  Marco Sambi ,  Davide Giuseppe Patti ,  Marco Morelli ,  Giuseppe Barillaro

IPC: H01L29/78 ,  H01L21/762 ,  H01L21/02 ,  H01L21/306 ,  H01L29/06

Abstract: A technique to make silicon oxide regions from porous silicon and related semiconductor structures are disclosed. The porous silicon is made in situ by anodizing P doped silicon regions. Thus, the shape and profile of the oxide regions may be controlled by controlling the shape and profile of the P doped silicon regions.

公开(公告)号：US09911869B2

公开(公告)日：2018-03-06

申请号：US15250645

申请日：2016-08-29

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Marco Sambi ,  Dario Ripamonti ,  Davide Ugo Ghisu ,  Dario Bianchi

IPC: H01L29/861 ,  H01L29/06 ,  H01L27/06

CPC classification number: H01L29/861 ,  H01L21/76 ,  H01L27/0629 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/8611

Abstract: A diode comprising a semiconductor body delimited by a front surface and including: a first semiconductor region having a first type of conductivity, facing at least in part the front surface; and a second semiconductor region having a second type of conductivity, the second semiconductor region facing at least in part the front surface and surrounding, at a distance, at least part of the first semiconductor region. The diode further includes: a trench, which extends in the semiconductor body starting from the front surface, for surrounding at least part of the second semiconductor region; and a lateral insulation region, which is arranged within the trench, is formed by dielectric material and contacts at least in part the second semiconductor region.

公开(公告)号：US20170263784A1

公开(公告)日：2017-09-14

申请号：US15250645

申请日：2016-08-29

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Marco Sambi ,  Dario Ripamonti ,  Davide Ugo Ghisu ,  Dario Bianchi

IPC: H01L29/861 ,  H01L27/06 ,  H01L29/06

CPC classification number: H01L29/861 ,  H01L21/76 ,  H01L27/0629 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/8611

Abstract: A diode comprising a semiconductor body delimited by a front surface and including: a first semiconductor region having a first type of conductivity, facing at least in part the front surface; and a second semiconductor region having a second type of conductivity, the second semiconductor region facing at least in part the front surface and surrounding, at a distance, at least part of the first semiconductor region. The diode further includes: a trench, which extends in the semiconductor body starting from the front surface, for surrounding at least part of the second semiconductor region; and a lateral insulation region, which is arranged within the trench, is formed by dielectric material and contacts at least in part the second semiconductor region.

公开(公告)号：US11469136B2

公开(公告)日：2022-10-11

申请号：US17001295

申请日：2020-08-24

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone Dario Mariani ,  Fabrizio Fausto Renzo Toia ,  Marco Sambi ,  Davide Giuseppe Patti ,  Marco Morelli ,  Giuseppe Barillaro

IPC: H01L21/76 ,  H01L21/762 ,  H01L21/02 ,  H01L21/306 ,  H01L29/06 ,  H01L29/78

Abstract: A technique to make silicon oxide regions from porous silicon and related semiconductor structures is disclosed. The porous silicon is made in situ by anodizing P doped silicon regions. Thus, the shape and profile of the oxide regions may be controlled by controlling the shape and profile of the P doped silicon regions.

公开(公告)号：US10236378B2

公开(公告)日：2019-03-19

申请号：US15457799

申请日：2017-03-13

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Marco Sambi ,  Fabrizio Fausto Renzo Toia ,  Marco Marchesi ,  Marco Morelli ,  Riccardo Depetro ,  Giuseppe Barillaro ,  Lucanos Marsilio Strambini

IPC: H01L29/76 ,  H01L29/78 ,  H01L21/02 ,  H01L21/265 ,  H01L21/3063 ,  H01L21/308 ,  H01L21/762 ,  H01L29/06 ,  H01L29/08 ,  H01L29/36 ,  H01L29/417 ,  H01L29/66 ,  H03K17/687 ,  H01L29/32 ,  H01L29/861 ,  H01L29/16

Abstract: An integrated electronic device having a semiconductor body including: a first electrode region having a first type of conductivity; and a second electrode region having a second type of conductivity, which forms a junction with the first electrode region. The integrated electronic device further includes a nanostructured semiconductor region, which extends in one of the first and second electrode regions.