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公开(公告)号：US12262598B2
公开(公告)日：2025-03-25
申请号：US18378656
申请日：2023-10-11
Applicant: Samsung Display Co., Ltd.
Inventor： Jaybum Kim , Myeongho Kim , Yeonhong Kim , Kyoungseok Son , Seungjun Lee , Seunghun Lee , Junhyung Lim
IPC: H10K59/124 , H01L27/12 , H10K59/121 , H10K71/00 , H01L25/16 , H01L25/18 , H10K59/12 , H10K59/65
Abstract: A display device is disclosed that includes: a substrate comprising a display area and a component area including a transmission area; a first thin-film transistor comprising a first semiconductor layer and a first gate electrode, the first semiconductor layer including a silicon semiconductor; a first insulating layer covering the first gate electrode; a second thin-film transistor comprising a second semiconductor layer arranged on the first insulating layer and a second gate electrode, the second semiconductor layer including an oxide semiconductor; a second insulating layer covering the second gate electrode and having a transmission hole overlapping the transmission area; an intermediate insulating layer between the first insulating layer and the second insulating layer; a conductive pattern between the intermediate insulating layer and the first insulating layer; and a display element arranged on the second insulating layer, wherein the transmission hole exposes an upper surface of the intermediate insulating layer.
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公开(公告)号：US20240237398A9
公开(公告)日：2024-07-11
申请号：US18544515
申请日：2023-12-19
Applicant: Samsung Display Co., Ltd.
Inventor： Jaybum Kim , Myeongho Kim , Yeonhong Kim , Kyoungseok Son , Sunhee Lee , Seungjun Lee , Seunghun Lee
IPC: H10K59/121 , H10K50/844 , H10K59/65 , H10K71/00
CPC classification number: H10K59/121 , H10K50/844 , H10K59/1213 , H10K59/1216 , H10K59/65 , H10K71/00 , H01L27/1255
Abstract: A display apparatus includes a substrate including a transmission area having a first through hole, a display area surrounding the transmission area, and a middle area disposed between the transmission area and the display area, a pixel circuit disposed on the display area, the pixel circuit including a first thin film transistor including a first semiconductor layer having polycrystalline silicon, and a second thin film transistor including a second semiconductor layer including an oxide semiconductor, a display element including a pixel electrode electrically connected to the pixel circuit, an opposite electrode disposed on the pixel electrode, and an intermediate layer disposed between the pixel electrode and the opposite electrode and including an emission layer, and a groove disposed in the middle area while surrounding the first through hole.
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公开(公告)号：US11575100B2
公开(公告)日：2023-02-07
申请号：US17082459
申请日：2020-10-28
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Jaybum Kim , Eoksu Kim , Kyoungseok Son , Junhyung Lim , Jihun Lim
Abstract: A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.
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公开(公告)号：US11430847B2
公开(公告)日：2022-08-30
申请号：US16820102
申请日：2020-03-16
Applicant: SAMSUNG DISPLAY CO., LTD
Inventor： Kyoungseok Son , Jaybum Kim , Eoksu Kim , Junhyung Lim , Jihun Lim
IPC: H01L27/32 , H01L21/02 , H01L21/4757 , H01L29/66 , H01L29/786 , H01L27/12 , H01L49/02 , H01L29/24
Abstract: A method of manufacturing a semiconductor device. A pre first semiconductor pattern having a crystalline semiconductor material is formed on a base substrate. A pre first insulation layer is formed on the pre first semiconductor pattern. A first semiconductor pattern is formed by defining a channel region in the pre first semiconductor pattern. A pre protection layer is formed on the pre first insulation layer. A pre second semiconductor pattern including an oxide semiconductor material is formed on the pre protection layer. A pre second insulation layer is formed on the pre second semiconductor pattern. The pre second insulation layer is patterned using an etching gas such that at least a portion of the pre second semiconductor pattern is exposed. A second semiconductor pattern is formed by defining a channel region in the pre second semiconductor pattern. The pre protection layer has a material with a first etch selectivity that is different from a second etch selectivity of the second insulation layer with respect to the etching gas.
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公开(公告)号：US20210336061A1
公开(公告)日：2021-10-28
申请号：US17370590
申请日：2021-07-08
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Kyoungseok Son , Eoksu Kim , Jaybum Kim , Junhyung Lim , Jihun Lim
IPC: H01L29/786 , H01L27/12 , H01L27/32 , H01L23/485 , H01L51/00
Abstract: A display apparatus includes: a substrate on which a first area, a second area spaced apart from the first area, and a bending area between a first area and a second area and bent along a bending axis are defined; a first thin-film transistor (“TFT”) and a second TFT; and a first conductive layer and a second conductive layer. The first TFT includes: a first active layer including polycrystalline silicon; a first gate electrode; and a first electrode disposed at a level which is the same as a level of the first conductive layer, and the second TFT includes: a second active layer including an oxide semiconductor; a second gate electrode; and a second electrode disposed at a level which is the same as a level of the second conductive layer.
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Patent Agency Ranking
公开(公告)号：US11088284B2
公开(公告)日：2021-08-10
申请号：US15871468
申请日：2018-01-15
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Kyoungseok Son , Eoksu Kim , Jaybum Kim , Junhyung Lim , Jihun Lim
IPC: H01L29/786 , H01L27/12 , H01L27/32 , H01L23/485 , H01L51/00 , H01L27/06
Abstract: A display apparatus includes: a substrate on which a first area, a second area spaced apart from the first area, and a bending area between a first area and a second area and bent along a bending axis are defined; a first thin-film transistor (“TFT”) and a second TFT; and a first conductive layer and a second conductive layer. The first TFT includes: a first active layer including polycrystalline silicon; a first gate electrode; and a first electrode disposed at a level which is the same as a level of the first conductive layer, and the second TFT includes: a second active layer including an oxide semiconductor; a second gate electrode; and a second electrode disposed at a level which is the same as a level of the second conductive layer.
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公开(公告)号：US11877479B2
公开(公告)日：2024-01-16
申请号：US18090401
申请日：2022-12-28
Applicant: Samsung Display Co., Ltd.
Inventor： Kyoungseok Son , Myounghwa Kim , Eoksu Kim , Taesang Kim , Masataka Kano
IPC: H01L27/12 , H10K59/122 , H10K50/11 , H10K50/844 , H10K59/123 , H10K59/124 , H10K59/131 , H10K59/121 , H10K71/00 , H10K77/10 , H10K59/12 , H10K102/00
CPC classification number: H10K59/122 , H01L27/124 , H01L27/1225 , H01L27/1288 , H10K50/11 , H10K50/844 , H10K59/123 , H10K59/124 , H10K59/1213 , H10K59/131 , H10K71/00 , H10K77/111 , H10K59/1201 , H10K2102/311
Abstract: A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.
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公开(公告)号：US11818923B2
公开(公告)日：2023-11-14
申请号：US17353640
申请日：2021-06-21
Applicant: Samsung Display Co., Ltd.
Inventor： Jaybum Kim , Myeongho Kim , Yeonhong Kim , Kyoungseok Son , Seungjun Lee , Seunghun Lee , Junhyung Lim
IPC: H01L27/32 , H01L51/56 , H10K59/124 , H10K71/00 , H01L27/12 , H10K59/121 , H01L25/18 , H01L25/16 , H10K59/12 , H10K59/65
CPC classification number: H10K59/124 , H01L27/1225 , H01L27/1251 , H01L27/1255 , H10K59/1213 , H10K59/1216 , H10K71/00 , H01L25/167 , H01L25/18 , H10K59/1201 , H10K59/121 , H10K59/65
Abstract: A display device is disclosed that includes: a substrate comprising a display area and a component area including a transmission area; a first thin-film transistor comprising a first semiconductor layer and a first gate electrode, the first semiconductor layer including a silicon semiconductor; a first insulating layer covering the first gate electrode; a second thin-film transistor comprising a second semiconductor layer arranged on the first insulating layer and a second gate electrode, the second semiconductor layer including an oxide semiconductor; a second insulating layer covering the second gate electrode and having a transmission hole overlapping the transmission area; an intermediate insulating layer between the first insulating layer and the second insulating layer; a conductive pattern between the intermediate insulating layer and the first insulating layer; and a display element arranged on the second insulating layer, wherein the transmission hole exposes an upper surface of the intermediate insulating layer.
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公开(公告)号：US11552142B2
公开(公告)日：2023-01-10
申请号：US17116943
申请日：2020-12-09
Applicant: Samsung Display Co., Ltd.
Inventor： Kyoungseok Son , Myounghwa Kim , Eoksu Kim , Taesang Kim , Masataka Kano
Abstract: A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.
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公开(公告)号：US20220199720A1
公开(公告)日：2022-06-23
申请号：US17353640
申请日：2021-06-21
Applicant: Samsung Display Co., Ltd.
Inventor： Jaybum Kim , Myeongho Kim , Yeonhong Kim , Kyoungseok Son , Seungjun Lee , Seunghun Lee , Junhyung Lim
Abstract: A display device is disclosed that includes: a substrate comprising a display area and a component area including a transmission area; a first thin-film transistor comprising a first semiconductor layer and a first gate electrode, the first semiconductor layer including a silicon semiconductor; a first insulating layer covering the first gate electrode; a second thin-film transistor comprising a second semiconductor layer arranged on the first insulating layer and a second gate electrode, the second semiconductor layer including an oxide semiconductor; a second insulating layer covering the second gate electrode and having a transmission hole overlapping the transmission area; an intermediate insulating layer between the first insulating layer and the second insulating layer; a conductive pattern between the intermediate insulating layer and the first insulating layer; and a display element arranged on the second insulating layer, wherein the transmission hole exposes an upper surface of the intermediate insulating layer.
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