公开(公告)号：US10032927B2

公开(公告)日：2018-07-24

申请号：US15374189

申请日：2016-12-09

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Katsushi Kishimoto ,  Yoshinori Tanaka ,  Yeon Keon Moon ,  Sang Woo Sohn ,  Sang Won Shin ,  Takayuki Fukasawa

IPC: H01L29/786 ,  H01L29/26 ,  H01J37/34 ,  H01L29/66 ,  C23C14/34 ,  H01L29/417

Abstract: An oxide sputtering target includes at least one of indium (In), zinc (Zn), tin (Sn), and gallium (Ga), and tungsten (W) in an amount from 0.005 mol % to 1 mol %.

公开(公告)号：US12080826B2

公开(公告)日：2024-09-03

申请号：US17171451

申请日：2021-02-09

Applicant: Samsung Display Co., LTD.

Inventor： Joon Seok Park ,  Myoung Hwa Kim ,  Tae Sang Kim ,  Yeon Keon Moon ,  Geun Chul Park ,  Jun Hyung Lim ,  Hye Lim Choi

IPC: H01L33/12 ,  H01L27/15 ,  H01L33/00 ,  H01L33/56 ,  H01L33/62

CPC classification number: H01L33/12 ,  H01L27/156 ,  H01L33/0095 ,  H01L33/56 ,  H01L33/62

Abstract: A display device may include a first gate electrode on a substrate, a buffer layer on the first gate electrode, a first active pattern on the buffer layer, overlapping the first gate electrode, and including an oxide semiconductor, a source pattern and a drain pattern respectively on ends of the first active pattern, an insulation layer overlapping the source pattern and the drain pattern on the buffer layer, an oxygen supply pattern on the insulation layer, overlapping the first active pattern, and supplying oxygen to the first active pattern, a second active pattern on the insulation layer and spaced apart from the oxygen supply pattern, the second active pattern including a channel region, and a source region and a drain region, an insulation pattern on the channel region of the second active pattern, and a second gate electrode on the insulation pattern.

公开(公告)号：US11581517B2

公开(公告)日：2023-02-14

申请号：US16837540

申请日：2020-04-01

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Seok Park ,  Yeon Keon Moon ,  Myoung Hwa Kim ,  Tae Sang Kim ,  Hyung Jun Kim ,  Geun Chul Park ,  Sang Woo Sohn ,  Jun Hyung Lim ,  Kyung Jin Jeon ,  Hye Lim Choi

IPC: H01L51/56 ,  G09G3/3266 ,  G09G3/3291 ,  H01L29/786 ,  H01L29/49 ,  G09G3/325

Abstract: A display device includes pixels connected to scan lines and data lines intersecting the scan lines, wherein each of the pixels includes a light-emitting element, a driving transistor to control a driving current supplied to the light-emitting element according to a data voltage applied from the data lines, and a switching transistor to apply the data voltage of the data line to the driving transistor according to a scan signal applied from the scan lines. The driving transistor includes a first active layer having an oxide semiconductor and a first gate electrode below the first active layer. The switching transistor includes a second active layer having a same oxide semiconductor as the oxide semiconductor of the first active layer and a second gate electrode below the second active layer. At least one of the driving transistor and the switching transistor includes an oxide layer above each of the active layers.

公开(公告)号：US11335707B2

公开(公告)日：2022-05-17

申请号：US16371433

申请日：2019-04-01

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyoung Seok Son ,  Myounghwa Kim ,  Jaybum Kim ,  Yeon Keon Moon ,  Masataka Kano

IPC: H01L27/12 ,  H01L27/32

Abstract: A display apparatus includes a base substrate, a polysilicon active pattern disposed on the base substrate, including polycrystalline silicon, including a source region and a drain region each doped with impurities and a channel region between the source region and the drain region, and including indium, a first gate electrode overlapping the channel region, and a source electrode electrically connected to the source region and a drain electrode electrically connected to the drain region.

公开(公告)号：US11335273B2

公开(公告)日：2022-05-17

申请号：US16849575

申请日：2020-04-15

Applicant: Samsung Display Co., LTD.

Inventor： Hye Lim Choi ,  Yeon Keon Moon ,  Joon Seok Park ,  Myoung Hwa Kim ,  Tae Sang Kim ,  Hyung Jun Kim ,  Geun Chui Park ,  Kyung Jin Jeon

IPC: G09G3/32 ,  G09G3/3291 ,  H01L27/32 ,  G09G3/3266

Abstract: A display device includes pixels connected to scan lines and data lines intersecting the scan lines, wherein each of the pixels includes a light emitting element and a first transistor configured to control a driving current supplied to the light emitting element according to a data voltage applied from a respective data line of the data lines, the first transistor includes a first active layer including an oxide semiconductor containing indium (In), and a content of the indium in the oxide semiconductor of the first active layer is 70 at % or more.

公开(公告)号：US11195861B2

公开(公告)日：2021-12-07

申请号：US16818310

申请日：2020-03-13

Applicant: Samsung Display Co., LTD.

Inventor： Geun Chul Park ,  Joon Seok Park ,  Tae Sang Kim ,  Yeon Keon Moon ,  Jun Hyung Lim ,  Kyung Jin Jeon

IPC: H01L27/00 ,  H01L29/00 ,  H01L27/12

Abstract: A display device and a method of manufacturing the same. The display device includes a pixel connected to a scan line and a data line intersecting the scan line, and a driving transistor and a switching transistor disposed in the pixel. The driving transistor includes a substrate, a first active layer disposed on the substrate, a first gate electrode disposed on the first active layer, and a second insulating film contacting the first gate electrode and the first gate electrode. The switching transistor includes a second active layer disposed on the substrate, a second gate electrode disposed on the second active layer, a first insulating film contacting the second active layer and the second gate electrode, and a second insulating film covering the first insulating film. The first insulating film and the second insulating film are made of different materials from each other.

公开(公告)号：US09543444B2

公开(公告)日：2017-01-10

申请号：US14487916

申请日：2014-09-16

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Katsushi Kishimoto ,  Yoshinori Tanaka ,  Yeon Keon Moon ,  Sang Woo Sohn ,  Sang Won Shin ,  Takayuki Fukasawa

IPC: H01L29/786 ,  H01L29/26 ,  H01J37/34

CPC classification number: H01L29/7869 ,  C23C14/3414 ,  H01J37/3429 ,  H01J37/3491 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78693

Abstract: An oxide sputtering target includes at least one of indium (In), zinc (Zn), tin (Sn), and gallium (Ga), and tungsten (W) in an amount from 0.005 mol % to 1 mol %.

Abstract translation: 氧化物溅射靶包括铟（In），锌（Zn），锡（Sn）和镓（Ga）以及钨（W）中的至少一种，其量为0.005mol％至1mol％。

公开(公告)号：US20150228797A1

公开(公告)日：2015-08-13

申请号：US14482413

申请日：2014-09-10

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yeon Keon Moon ,  Sang Woo Sohn ,  Katsushi Kishimoto ,  Takayuki Fukasawa ,  Sang Won Shin

IPC: H01L29/786 ,  C23C14/08 ,  C23C14/34 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/7869 ,  C23C14/083 ,  C23C14/086 ,  C23C14/3464 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/02631 ,  H01L29/66969

Abstract: A thin film transistor array panel includes a substrate and a gate line disposed on the substrate, The gate line includes a gate electrode. A gate insulating layer is disposed on the gate line. An oxide semiconductor layer is disposed on the gate insulating layer. The oxide semiconductor layer at least partially overlaps the gate electrode. A data line is disposed on the oxide semiconductor layer. The data line includes a source electrode and a drain electrode facing the source electrode. The oxide semiconductor layer includes tungsten, indium, zinc, or tin.

Abstract translation: 薄膜晶体管阵列面板包括衬底和设置在衬底上的栅极线。栅极线包括栅电极。 栅极绝缘层设置在栅极线上。 氧化物半导体层设置在栅极绝缘层上。 氧化物半导体层至少部分地与栅电极重叠。 数据线设置在氧化物半导体层上。 数据线包括面对源电极的源电极和漏电极。 氧化物半导体层包括钨，铟，锌或锡。

公开(公告)号：US20240188322A1

公开(公告)日：2024-06-06

申请号：US18462389

申请日：2023-09-06

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Sangwoo Sohn ,  Eunhye Ko ,  Yeon Keon Moon ,  Sunhee Lee ,  Hyunmo Lee ,  Hyunjun Jeong

IPC: H10K50/30 ,  H10K59/121 ,  H10K59/80 ,  H10K71/00 ,  H10K77/10

CPC classification number: H10K50/30 ,  H10K59/1213 ,  H10K59/805 ,  H10K71/621 ,  H10K77/10 ,  H10K2102/302

Abstract: A display panel includes a light emitting element and a pixel circuit electrically connected to the light emitting element and includes a first transistor and a second transistor. The first transistor includes a first semiconductor pattern including a first source region, a first drain region, and a first channel region, a first gate electrode disposed over the first channel region, and a first conductive pattern disposed under the first channel region. The second transistor includes a second semiconductor pattern including a second source region, a second drain region, and a second channel region, a second gate electrode disposed over the second channel region, and a second conductive pattern disposed under the second channel region. A length of the first conductive pattern is longer than a length of the first gate electrode. The second conductive pattern is shorter than a length of the second gate electrode.

公开(公告)号：US11798493B2

公开(公告)日：2023-10-24

申请号：US17393298

申请日：2021-08-03

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung Hwa Kim ,  Masataka Kano ,  Yeon Keon Moon ,  Joon Seok Park ,  Jun Hyung Lim ,  Hye Lim Choi

IPC: G09G3/30 ,  G09G3/36 ,  G06F3/038 ,  G09G5/00 ,  G09G3/3291 ,  G09G3/3266 ,  H10K50/81 ,  H10K71/00 ,  H10K102/10

CPC classification number: G09G3/3291 ,  G09G3/3266 ,  H10K50/81 ,  H10K71/00 ,  H10K2102/103

Abstract: A display device including: a pixel connected to a scan line and a data line intersecting the scan line. The pixel includes a light emitting element and a driving transistor which controls a driving current supplied to the light emitting element according to a data voltage applied from the data line. The driving transistor includes a first active layer including an oxide semiconductor doped with a metal.