公开(公告)号：US11866627B2

公开(公告)日：2024-01-09

申请号：US17192388

申请日：2021-03-04

Applicant: Samsung Display Co., Ltd.

Inventor： Changhee Lee ,  Dukki Kim ,  Hyojin Ko ,  Sehun Kim ,  Jaehoon Kim ,  Hyunmi Doh ,  Yunku Jung ,  Jaekook Ha

IPC: C09K11/06 ,  C07C309/30 ,  C07C53/00 ,  C07C63/08 ,  C07F9/54 ,  C07C43/10 ,  C07C211/09 ,  C07C309/04 ,  H10K85/60 ,  H10K50/115 ,  H10K71/00 ,  H10K71/15

CPC classification number: C09K11/06 ,  C07C43/10 ,  C07C53/00 ,  C07C63/08 ,  C07C211/09 ,  C07C309/04 ,  C07C309/30 ,  C07F9/5407 ,  C07F9/5442 ,  H10K85/60 ,  C09K2211/10 ,  C09K2211/1007 ,  H10K50/115 ,  H10K71/00 ,  H10K71/15

Abstract: A quantum dot composition includes a quantum dot, and a ligand bonded to a surface of the quantum dot, wherein the ligand includes a head portion bonded to the surface of the quantum dot and containing a polar solvent dissociative functional group, and a tail portion connected to the head portion. A quantum dot composition according to an embodiment is used to form an emission layer of a light emitting element to enhance luminous efficiency of the light emitting element including an emission layer formed through the quantum dot composition.

公开(公告)号：US11802239B2

公开(公告)日：2023-10-31

申请号：US17203538

申请日：2021-03-16

Applicant: Samsung Display Co., Ltd. ,  Hongik University Industry-Academia Cooperation Foundation

Inventor： Yunhyuk Ko ,  Heesun Yang ,  Changhee Lee ,  Kyunghye Kim ,  Sungwoon Kim ,  Jungho Jo

IPC: C09K11/62 ,  C09K11/70 ,  C09K11/08 ,  C09K11/56 ,  C01G15/00 ,  H05B33/14 ,  C01G9/08 ,  C01B19/04 ,  H10K50/115 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  H10K102/00

CPC classification number: C09K11/626 ,  C01B19/04 ,  C01G9/08 ,  C01G15/006 ,  C09K11/0883 ,  C09K11/565 ,  C09K11/70 ,  H05B33/14 ,  H10K50/115 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01P2004/64 ,  C01P2006/60 ,  H10K2102/00

Abstract: Provided are a quantum dot, a method of preparing the quantum dot, an optical member including the quantum dot, and an electronic device including the quantum dot. The quantum dot includes a core including indium (In), A1, and A2; and a shell covering the core. A1 is a Group V element, A2 is a Group III element other than indium, and the core includes a first region, and a second region covering the first region. The first region does not include A2, and includes indium and A1, and the second region includes indium, A1, and A2, and indium and A2 are alloyed with each other in the second region.

公开(公告)号：US20230320116A1

公开(公告)日：2023-10-05

申请号：US18128965

申请日：2023-03-30

Applicant: Samsung Display Co., Ltd. ,  Research & Business Foundation, SUNGKYUNKWAN UNIVERSITY

Inventor： Yunhyuk Ko ,  Changhee Lee ,  Youngsik Kim ,  Taewan Kim ,  Sohee Jeong ,  Eunhye Cho ,  Mahnmin Choi

IPC: H10K50/115 ,  H01L33/50 ,  B82Y30/00 ,  B82Y40/00 ,  C09K11/06

CPC classification number: H10K50/115 ,  H01L33/502 ,  B82Y30/00 ,  B82Y40/00 ,  C09K11/06 ,  C09K2211/188

Abstract: A method of preparing quantum dot includes: forming a first mixture comprising a core, a zinc-containing first material, and a selenium-containing second material; forming a first intermediate comprising a core and a first shell, from the first mixture, followed by forming a second mixture comprising the first intermediate; forming a third mixture by adding a zinc-containing third material and a sulfur-containing fourth material to the second mixture; forming a second intermediate comprising the core, the first shell, and a second shell, from the third mixture, followed by forming a fourth mixture comprising the second intermediate; adding a ligand precursor-containing fifth material to the fourth mixture; and forming a ligand layer covering the second shell of the second intermediate, wherein an amount of the ligand precursor is in a range of about 10 pbw to about 22 pbw based on 100 pbw of the zinc-containing third material in the fourth mixture.

公开(公告)号：US20230313034A1

公开(公告)日：2023-10-05

申请号：US18194764

申请日：2023-04-03

Applicant: Samsung Display Co., Ltd.

Inventor： Sehun Kim ,  Changhee Lee ,  Dukki Kim ,  Wonjun Park ,  Jongwoo Shin ,  Sangyeop Lee ,  Jaekook Ha

IPC: C09K11/08 ,  H10K50/115 ,  H10K50/15 ,  H10K50/16 ,  B82Y30/00 ,  B82Y40/00

CPC classification number: C09K11/0811 ,  H10K50/115 ,  C09K11/0816 ,  H10K50/15 ,  H10K50/16 ,  B82Y30/00 ,  B82Y40/00

Abstract: Embodiments provide a method of preparing a metal oxide composition, a light-emitting device including a metal oxide layer formed using a metal oxide composition prepared by the method, and an electronic apparatus including the light-emitting device. The method includes preparing a first metal oxide particle, and forming a metal oxide particle by adding a halide compound to the first metal oxide particle, and treating the first metal oxide particle with the halide compound at a temperature equal to or less than about 60° C.

公开(公告)号：US11730003B2

公开(公告)日：2023-08-15

申请号：US17560161

申请日：2021-12-22

Applicant: Samsung Display Co., Ltd.

Inventor： Choelmin Jang ,  Byunghyuk Kwon ,  Changhee Lee ,  Myungsoo Huh ,  Cheollae Roh ,  Jaehoon Kim ,  Jeong Hye Choi

IPC: H01L51/50 ,  H10K30/80 ,  C09K11/08 ,  H10K50/15 ,  H10K50/16 ,  H10K50/17 ,  H10K50/86 ,  H10K50/115 ,  H10K59/12 ,  H10K59/38 ,  H10K71/00 ,  B82Y20/00 ,  H10K102/00

CPC classification number: H10K30/865 ,  C09K11/08 ,  H10K50/115 ,  H10K50/15 ,  H10K50/16 ,  H10K50/17 ,  H10K50/171 ,  H10K50/86 ,  H10K50/865 ,  H10K59/12 ,  H10K59/38 ,  H10K71/00 ,  B82Y20/00 ,  H10K2102/00 ,  H10K2102/351

Abstract: A light emitting diode according to embodiments of the present disclosure includes a first electrode, a second electrode opposite the first electrode, an emission layer between the first electrode and the second electrode, the emission layer including a quantum dot, a first charge transfer layer between the first electrode and the emission layer, a second charge transfer layer between the second electrode and the emission layer, and an insulating layer in at least one position between the first charge transfer layer and the emission layer, and/or between the second charge transfer layer and the emission layer, wherein the insulating layer includes an inorganic material. The light emitting diode and a display device including the same show improved life characteristics and emission efficiency properties.

公开(公告)号：US11649402B2

公开(公告)日：2023-05-16

申请号：US17034861

申请日：2020-09-28

Applicant: Samsung Display Co., Ltd. ,  Hannam University Institute for Industry-Academia Cooperation

Inventor： Yunhyuk Ko ,  Kwangsup Lee ,  Prabhakaran Prem ,  Changhee Lee ,  Gyeongju Kim ,  Sinil Choi

IPC: C09K11/88 ,  C09K11/54 ,  H01L51/50 ,  H01L33/50 ,  B82Y40/00 ,  B82Y20/00

CPC classification number: C09K11/88 ,  C09K11/54 ,  H01L33/502 ,  H01L51/5036 ,  B82Y20/00 ,  B82Y40/00

Abstract: A method of preparing a quantum dot, a quantum dot prepared by the method, an optical member including the quantum dot, and an apparatus including the quantum dot. The quantum dot may include: a core including a III-V compound; a first shell surrounding the core and including ZnSe; a second shell surrounding the first shell and including ZnSe1-xSx, wherein x may be a real number greater than 0 and smaller than 1; and a third shell surrounding the second shell and including ZnS. The method may include: forming the first shell from a first material including zinc and a second material including selenium in a solution; forming the second shell by adding to the solution a third material including zinc and a fourth material including selenium and sulfur; and forming the third shell by adding to the solution a fifth material including zinc.

公开(公告)号：US20220115617A1

公开(公告)日：2022-04-14

申请号：US17560161

申请日：2021-12-22

Applicant: Samsung Display Co., Ltd.

Inventor： Choelmin Jang ,  Byunghyuk Kwon ,  Changhee Lee ,  Myungsoo Huh ,  Cheollae Roh ,  Jaehoon Kim ,  Jeong Hye Choi

IPC: H01L51/50 ,  C09K11/08 ,  H01L27/32 ,  H01L51/52 ,  H01L51/56

Abstract: A light emitting diode according to embodiments of the present disclosure includes a first electrode, a second electrode opposite the first electrode, an emission layer between the first electrode and the second electrode, the emission layer including a quantum dot, a first charge transfer layer between the first electrode and the emission layer, a second charge transfer layer between the second electrode and the emission layer, and an insulating layer in at least one position between the first charge transfer layer and the emission layer, and/or between the second charge transfer layer and the emission layer, wherein the insulating layer includes an inorganic material. The light emitting diode and a display device including the same show improved life characteristics and emission efficiency properties.

公开(公告)号：US11239438B2

公开(公告)日：2022-02-01

申请号：US16714389

申请日：2019-12-13

Applicant: Samsung Display Co., Ltd.

Inventor： Choelmin Jang ,  Byunghyuk Kwon ,  Changhee Lee ,  Myungsoo Huh ,  Cheollae Roh ,  Jaehoon Kim ,  Jeong Hye Choi

IPC: H01L51/50 ,  C09K11/08 ,  H01L27/32 ,  H01L51/52 ,  H01L51/56 ,  B82Y20/00

Abstract: A light emitting diode according to embodiments of the present disclosure includes a first electrode, a second electrode opposite the first electrode, an emission layer between the first electrode and the second electrode, the emission layer including a quantum dot, a first charge transfer layer between the first electrode and the emission layer, a second charge transfer layer between the second electrode and the emission layer, and an insulating layer in at least one position between the first charge transfer layer and the emission layer, and/or between the second charge transfer layer and the emission layer, wherein the insulating layer includes an inorganic material. The light emitting diode and a display device including the same show improved life characteristics and emission efficiency properties.

公开(公告)号：US12207548B2

公开(公告)日：2025-01-21

申请号：US17030031

申请日：2020-09-23

Applicant: Samsung Display Co., Ltd.

Inventor： Hyunmi Doh ,  Changhee Lee ,  Myoungjin Park ,  Jaekook Ha

IPC: B82Y40/00 ,  C01G9/02 ,  C09K11/88 ,  H10K50/16 ,  H10K85/60

Abstract: A light-emitting device includes a first electrode, an emission layer, an electron transport layer, a metal-nucleation inducing layer, and a second electrode. The metal-nucleation inducing layer is in direct contact with the second electrode, and includes a metal-nucleation inducing material having at least one metal-nucleation inducing group. The second electrode includes a metal-containing film that is hybridized with the metal-nucleation inducing material. The metal-nucleation inducing group is a π electron-deficient nitrogen-containing C1-C60 cyclic group that is unsubstituted or substituted with at least one R1 or a group represented by one of Formulae 1A to 1E, and does not comprise a group represented by *—C(═O)(OH) and a cyano group. The emission efficiency and/or lifespan of the light-emitting device may be improved because of the metal-nucleation inducing layer.

公开(公告)号：US11955468B2

公开(公告)日：2024-04-09

申请号：US16932591

申请日：2020-07-17

Applicant: Samsung Display Co., Ltd.

Inventor： Yunku Jung ,  Sungwoon Kim ,  Changhee Lee ,  Jaekook Ha ,  Yunhyuk Ko ,  Jaehoon Kim ,  Minki Nam ,  Hyunmi Doh ,  Myoungjin Park ,  Jae Hong Park ,  Junwoo Park

IPC: H01L25/16 ,  H01L23/00 ,  H01L33/44

CPC classification number: H01L25/167 ,  H01L24/32 ,  H01L24/83 ,  H01L33/44 ,  H01L2224/32137 ,  H01L2224/80143 ,  H01L2224/83085 ,  H01L2224/83896 ,  H01L2924/12041

Abstract: Provided is a light emitting element according to embodiments which includes a body including a semiconductor layer and an active layer, and a ligand including a head portion bonded to a surface of the body, an end portion spaced apart from the body, and having a positive or a negative charge, and a chain portion connecting the head portion and the end portion.