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公开(公告)号：US20240387611A1
公开(公告)日：2024-11-21
申请号：US18789832
申请日：2024-07-31
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jinhong KIM , Changsoo LEE , Yongsung KIM , Euncheol DO , Jooho LEE , Yong-Hee CHO
IPC: H10B12/00
Abstract: A capacitor including a lower electrode; an upper electrode apart from the lower electrode; and a between the lower electrode and the upper electrode, the dielectric including a dielectric layer including TiO2, and a leakage current reducing layer including GeO2 in the dielectric layer. Due to the leakage current reducing layer, a leakage current is effectively reduced while a decrease in the dielectric constant of the dielectric thin-film is small.
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12.发明公开公开(公告)号：US20240290821A1
公开(公告)日：2024-08-29
申请号：US18444162
申请日：2024-02-16
Inventor： Hyungjun KIM , Sang Woon LEE , Se Eun KIM , Hye Min LEE , Jae Deock JEON , Cheheung KIM , Boeun PARK , Jooho LEE , Changsoo LEE
IPC: C23C16/455
CPC classification number: H01L28/55 , C23C16/45527 , H01L28/91
Abstract: A method of manufacturing, by atomic layer deposition, an electrode including a perovskite type crystal structure represented by Formula 1, includes: forming a vanadium-containing precursor on a substrate; forming a vanadium-containing intermediate phase by reacting the vanadium-containing precursor with oxygen molecules; and forming a first thin film by reacting the vanadium-containing intermediate phase with water.
wherein, in Formula 1,
0.3≤x≤0.7, and
2.5≤y≤3.0.-
公开(公告)号：US20240258366A1
公开(公告)日：2024-08-01
申请号：US18350397
申请日：2023-07-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Changsoo LEE , Jinhong KIM , Cheheung KIM , Jooho LEE , Yong-Hee CHO
IPC: H10B12/00
CPC classification number: H01L28/90 , H10B12/315
Abstract: A capacitor is provided. The capacitor includes a first electrode, a second electrode disposed to face the first electrode, a dielectric layer of a rutile phase, disposed between the first electrode and the second electrode, and an interface layer between the first electrode and the dielectric layer, wherein the interface layer includes a first interface layer and a second interface layer, the first interface layer is adjacent to the first electrode, the second interface layer is adjacent to the dielectric layer, the first interface layer includes a conductive metal oxide having a work function in a range of about 4.8 eV to about 6.0 eV, the second interface layer includes a metal oxide having a rutile-phase crystal structure, and a thickness of the second interface layer is smaller than a thickness of the first interface layer.
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公开(公告)号：US20240258365A1
公开(公告)日：2024-08-01
申请号：US18541848
申请日：2023-12-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jinhong KIM , Changsoo LEE , Cheheung KIM , Jooho LEE
CPC classification number: H01L28/75 , H01G4/008 , H01G4/10 , H10B12/315
Abstract: Provided is a capacitor including a first thin film electrode layer, a second thin film electrode layer, a dielectric layer disposed between the first thin film electrode layer and the second thin film electrode layer, and an interlayer disposed between the second thin film electrode layer and the dielectric layer. Due to the interlayer, the decrease in permittivity of the dielectric layer is small while leakage current may be effectively reduced.
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公开(公告)号：US20220085144A1
公开(公告)日：2022-03-17
申请号：US17209762
申请日：2021-03-23
Inventor： Changsoo LEE , Sangwoon LEE , Chan KWAK , Hyungjun KIM , Euncheol DO
IPC: H01L49/02 , H01L27/108
Abstract: Provided are a dielectric thin film, an integrated device including the same, and a method of manufacturing the dielectric thin film. The dielectric thin film includes an oxide having a perovskite-type crystal structure represented by Formula 1 below and wherein the dielectric thin film comprises 0.3 at % or less of halogen ions or sulfur ions. A2-xB3-yO10-z In Formula 1, A, B, x, y, and z are disclosed in the specification.
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Patent Agency Ranking
公开(公告)号：US20170205897A1
公开(公告)日：2017-07-20
申请号：US15359799
申请日：2016-11-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jae-Bong CHUN , Dong-Il SON , Chi-Hyun CHO , Gyu-Cheol CHOI , Chang-Ryong HEO , Chang-Taek KANG , Changsoo LEE
CPC classification number: G06F3/03 , G06F3/012 , G06F3/017 , G06F3/0304 , G06F3/038 , G06K9/0057 , G06K9/00664 , G06K9/00771
Abstract: A method and apparatus for an electronic device and sensor includes: a housing; at least one sensor disposed on a part of the housing to detect an external image of the electronic device or sound. A communication circuit cis arranged in the housing, and at least one processor is electrically connected to the at least one sensor and the communication circuit. A memory stores instructions that, when executed, cause the at least one processor to control operation of the at least one sensor to operate as a user interface of the electronic device, and/or to operate as a sensing device for detecting a movement and/or sound of an object within a selected range or space, and to provide data based at least partly on the detected movement and/or sound.
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公开(公告)号：US20250067992A1
公开(公告)日：2025-02-27
申请号：US18945816
申请日：2024-11-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dohyoung KIM , Jimin KIM , Joayoung LEE , Changsoo LEE , Changyoul LEE , Hoon HAN
IPC: G02B27/01 , G06Q50/10 , G06T19/00 , H04N13/332 , H04N13/366 , H04N13/383 , H04N21/414 , H04N21/442 , H04N21/81
Abstract: A method of providing an augmented reality (AR) content in a vehicle, and/or a wearable AR device and an electronic device for performing a method. The wearable AR device may include a processor and a memory storing instructions. The processor, when executing the instructions, causes the wearable AR device to: set reference points corresponding to positions of anchor devices on first spatial map data corresponding to a space of a vehicle, determine a position and a direction of the wearable AR device on the first spatial map data based on the reference points and a positional relationship between the wearable AR device and anchor devices, and control output AR content based on the determined position and the determined direction of the wearable AR device.
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公开(公告)号：US20240243164A1
公开(公告)日：2024-07-18
申请号：US18409957
申请日：2024-01-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jooho LEE , Yong-Hee CHO , Jinhong KIM , Changsoo LEE , Sung HEO
CPC classification number: H01L28/65 , H01L28/75 , H01L28/91 , H10B12/315
Abstract: Provided are a capacitor, a method of preparing the capacitor, and an electronic device including the capacitor, the capacitor including a lower electrode, an upper electrode spaced apart from the lower electrode, a dielectric between the lower electrode and the upper electrode, a first layer between the lower electrode and the dielectric, and a second layer between the dielectric and the upper electrode, wherein the dielectric comprises TiO2 having a rutile phase and is doped with magnesium, the first layer includes a material having a higher work function than that of a material included in the lower electrode, and the second layer includes a dielectric protective material.
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19.发明公开公开(公告)号：US20230357043A1
公开(公告)日：2023-11-09
申请号：US18356287
申请日：2023-07-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Giyoung JO , Chan KWAK , Hyungjun KIM , Euncheol DO , Hyeoncheol PARK , Changsoo LEE
IPC: C01G33/00 , C04B35/626 , C04B35/645 , H10B12/00
CPC classification number: C01G33/006 , H01L28/40 , C04B35/6261 , C04B35/62695 , C04B35/645 , H10B12/37 , C01P2002/72 , C01P2006/40 , C01P2002/76 , C01P2006/10
Abstract: A ternary paraelectric having a Cc structure and a method of manufacturing the same are provided. The ternary paraelectric having a Cc structure includes a material having a chemical formula of A2B4O11 that has a monoclinic system, is a space group No. 9, and has a dielectric constant of 150 to 250, wherein “A” is a Group 1 element, and “B” is a Group 5 element. “A” may include one of Na, K, Li and Rb. “B” may include one of Nb, V, and Ta. The A2B4O11 material may be Na2Nb4O11 in which bandgap energy thereof is greater than that of STO. The A2B4O11 material may have relative density that is greater than 90% or more.
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20.发明申请公开(公告)号：US20230102906A1
公开(公告)日：2023-03-30
申请号：US17715473
申请日：2022-04-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Changsoo LEE , Jinhong KIM , Yongsung KIM , Jiwoon PARK , Jooho LEE , Yong-Hee CHO
IPC: H01L49/02 , H01L27/108
Abstract: A capacitor includes a lower electrode layer including a first conductive layer and a second conductive layer on the first conductive layer, the second conductive layer including SnO2 doped with an impurity; a dielectric layer on the second conductive layer, the dielectric layer including a rutile-phase oxide; and an upper electrode layer on the dielectric layer.
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