公开(公告)号：US20250125221A1

公开(公告)日：2025-04-17

申请号：US18658593

申请日：2024-05-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungchan KANG ,  Dongkyun KIM ,  Daehyuk SON ,  Hotaik LEE ,  Seogwoo HONG

IPC: H01L23/473 ,  H01L23/367

Abstract: A semiconductor device includes: a semiconductor chip including a semiconductor integrated circuit; a heat transfer member covering an upper surface of the semiconductor chip; and a plurality of microstructures on an upper surface of the heat transfer member and configured to generate a capillary force to cause a flow of a coolant, wherein a first capillary channel is provided between adjacent microstructures of the plurality of microstructures, and at least one of the plurality of microstructures may include a hollow microstructure in which a second capillary channel is provided.

公开(公告)号：US20240234384A1

公开(公告)日：2024-07-11

申请号：US18402416

申请日：2024-01-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook HWANG ,  Youngtek OH ,  Dongkyun KIM ,  Dongho KIM ,  Joonyong PARK ,  Sanghoon SONG ,  Minchul YU ,  Junsik HWANG

IPC: H01L25/075

CPC classification number: H01L25/0753

Abstract: A method of transferring electronic chips includes attaching, to a relay substrate, the electronic chips arranged on a base substrate, separating the electronic chips from the base substrate, wetting a target substrate using a solvent, transferring, to the target substrate, the electronic chips that are attached to the relay substrate, pressing the relay substrate in a thickness direction of the target substrate, and drying the target substrate.

公开(公告)号：US20230361251A1

公开(公告)日：2023-11-09

申请号：US17900193

申请日：2022-08-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minchul YU ,  Seogwoo HONG ,  Kyungwook HWANG ,  Junsik HWANG ,  Dongkyun KIM ,  Hyunjoon KIM

IPC: H01L33/44 ,  H01L33/00

CPC classification number: H01L33/44 ,  H01L33/005

Abstract: Provided are a semiconductor device including a passivation layer and a method of fabricating an electronic apparatus including the semiconductor device. The semiconductor device includes a semiconductor device layer including at least one electrode provided at an upper portion thereof and a passivation layer at least partially covering the at least one electrode.

公开(公告)号：US20230215979A1

公开(公告)日：2023-07-06

申请号：US17847637

申请日：2022-06-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunjoon KIM ,  Dongkyun KIM ,  Dongho KIM ,  Joonyong PARK ,  Seogwoo HONG ,  Kyungwook HWANG ,  Junsik HWANG

IPC: H01L33/38 ,  H01L33/44 ,  H01L25/075 ,  H01L27/15

CPC classification number: H01L33/382 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/44

Abstract: A micro light-emitting element includes a first conductivity type semiconductor layer including a lower surface on which an uneven pattern is formed, an active layer provided on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer provided on the active layer, at least one electrode provided on the second conductivity type semiconductor layer, and a transparent coating layer including a first surface covering the lower surface of the first conductivity type semiconductor layer, and a second surface facing the first surface and having a second surface roughness that is less than a first surface roughness of the lower surface of the first conductivity type semiconductor layer.

公开(公告)号：US20230197477A1

公开(公告)日：2023-06-22

申请号：US18075078

申请日：2022-12-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongkyun KIM ,  Minchul Yu ,  Kyungwook Hwang ,  Hyunjoon Kim ,  Joonyong Park ,  Seogwoo Hong

IPC: H01L21/67 ,  H01L21/673 ,  H01L21/68

CPC classification number: H01L21/67132 ,  H01L21/68 ,  H01L21/67051 ,  H01L21/67333

Abstract: A micro-semiconductor chip transfer apparatus includes: a wet chip supply module configured to supply a plurality of micro-semiconductor chips and liquid onto a transfer substrate; a chip alignment module including an absorber configured to move along a surface of the transfer substrate while absorbing the liquid; and a chip extraction module configured to extract, from the absorber, the micro-semiconductor chips remaining in the absorber.

公开(公告)号：US20200257389A1

公开(公告)日：2020-08-13

申请号：US16860869

申请日：2020-04-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongkyun KIM ,  Seogwoo HONG ,  Byungkyu LEE ,  Seokwhan CHUNG

IPC: G06F3/044 ,  G06K9/00 ,  G06F3/041

Abstract: A touch sensor includes a plurality of first electrodes, a plurality of second electrodes, and a capacitance measurer configured to measure mutual capacitances between the plurality of first electrodes and the plurality of second electrodes. Each of the first electrodes includes a plurality of loop patterns.

公开(公告)号：US20250105093A1

公开(公告)日：2025-03-27

申请号：US18616721

申请日：2024-03-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Daehyuk SON ,  Sungchan KANG ,  Dongkyun KIM ,  Hotaik LEE ,  Seogwoo HONG

IPC: H01L23/427

Abstract: A semiconductor device may include: a semiconductor chip may include a heat radiation part; a pressure chamber formed on the heat radiation part, wherein the pressure chamber is configured to contain coolant such that an internal pressure in the pressure chamber increases as the coolant absorbs heat from the heat radiation part, and the coolant is ejected in a first direction away from the heat radiation part as the internal pressure of the pressure chamber increases; and a cooling channel providing a flow path configured such that the coolant ejected from the pressure chamber flows through the flow path and back into the pressure chamber.

公开(公告)号：US20240178342A1

公开(公告)日：2024-05-30

申请号：US18198089

申请日：2023-05-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngtek OH ,  Kyungwook HWANG ,  Dongkyun KIM ,  Dongho KIM ,  Joonyong PARK ,  Sanghoon SONG ,  Minchul YU ,  Junsik HWANG

IPC: H01L33/00

CPC classification number: H01L33/005

Abstract: A chip wet-transferring device includes a chamber, a support member provided in the chamber and configured to support a transfer substrate, the transfer substrate including a plurality of grooves and on which a plurality of micro-semiconductor chips are disposed, and a magnetic field generator configured to remove a first micro-semiconductor chip from among the plurality of micro-semiconductor chips that is disposed on the transfer substrate and at least partially outside of the plurality of grooves on the transfer substrate by generating a magnetic field that moves the first micro-semiconductor chip in a direction substantially parallel with an upper surface of the transfer substrate.

公开(公告)号：US20240006563A1

公开(公告)日：2024-01-04

申请号：US18084186

申请日：2022-12-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunjoon KIM ,  Seogwoo HONG ,  Dongkyun KIM ,  Dongho KIM ,  Joonyong Park ,  Sanghoon SONG ,  Kyungwook Hwang ,  Junsik HWANG

IPC: H01L33/48 ,  H01L33/62 ,  H01L25/075

CPC classification number: H01L33/486 ,  H01L33/62 ,  H01L25/0753 ,  H01L2933/0066

Abstract: Disclosed are a method of transferring semiconductor chips. The method may include providing a first substrate, adhering a support substrate to the first substrate, supplying and aligning a plurality of semiconductor chips, partially adhering a second substrate to a first surface of the first substrate, separating the support substrate from the first substrate, and adhering the plurality of semiconductor chips to the second substrate by supplying a fluid to a periphery of a second surface of the first substrate and applying a pressure to the second surface.

公开(公告)号：US20230131855A1

公开(公告)日：2023-04-27

申请号：US17713807

申请日：2022-04-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunjoon KIM ,  Seogwoo HONG ,  Kyungwook HWANG ,  Dongkyun KIM ,  Joonyong PARK ,  Junsik HWANG

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/24 ,  H01L25/075 ,  H01L33/00

Abstract: A light-emitting device and a display apparatus including the light-emitting device are provided. The light-emitting device includes a light-emitting cell including first and second electrodes arranged on an upper surface to be apart from each other, an extended layer in which the light-emitting cell is embedded and which has a width greater than a width of the light-emitting cell, and first and second electrode pads arranged on an upper surface of the extended layer to be apart from each other and respectively electrically connected to the first and second electrode.