公开(公告)号：US20240234180A1

公开(公告)日：2024-07-11

申请号：US18409400

申请日：2024-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook HWANG ,  Youngtek Oh ,  Dongkyun Kim ,  Junsik Hwang ,  Minchul Yu

IPC: H01L21/67

CPC classification number: H01L21/67132

Abstract: Provided are a wiper for transferring a micro semiconductor chip and an apparatus for collecting a micro semiconductor chip. The wiper includes an absorber for absorbing a solution used to wet transfer a micro semiconductor chip, and a protective layer coated on the absorber.

公开(公告)号：US20230402439A1

公开(公告)日：2023-12-14

申请号：US17985332

申请日：2022-11-11

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  CHUNGBUK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Kyungwook Hwang ,  Jaewook Jeong ,  Junsik Hwang ,  Dongkyun Kim ,  Dongho Kim ,  Hyunjoon Kim ,  Joonyong Park ,  Seogwoo Hong ,  Sanghoon Song ,  Minchul Yu

IPC: H01L25/16 ,  H01L33/38 ,  H01L23/00

CPC classification number: H01L25/167 ,  H01L33/38 ,  H01L24/05 ,  H01L24/95 ,  H01L2224/05559 ,  H01L24/16 ,  H01L2224/16145 ,  H01L2224/95001

Abstract: Provided is a microchip including a chip body having a first surface and a second surface facing the first surface, and an electrode layer on the second surface, wherein a surface roughness of the first surface is smaller than a surface roughness of an upper surface of the electrode layer such that van der Waals force between the first surface and an external contact surface are greater than van der Waals force between the electrode layer and the external contact surface.

公开(公告)号：US11328529B2

公开(公告)日：2022-05-10

申请号：US17009384

申请日：2020-09-01

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  ZINITIX CO., LTD.

Inventor： Minchul Yu ,  Byeongchecl So ,  Hieminn Kang ,  Taihyun Yoon

IPC: G06V40/13 ,  G06F3/044

Abstract: Disclosed are a fingerprint detection device and a method therefor. A fingerprint detection device includes: a touch panel; at least one amplifier including a first integrator amplifying an electrical signal received from the touch panel to a signal of a first polarity and a second integrator amplifying the electrical signal to a signal of a second polarity; and a processor configured to control the amplifier to perform a first integration process and a second integration process with respect to a plurality of electrical signals received from a plurality of nodes of the touch panel.

公开(公告)号：US20230197477A1

公开(公告)日：2023-06-22

申请号：US18075078

申请日：2022-12-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongkyun KIM ,  Minchul Yu ,  Kyungwook Hwang ,  Hyunjoon Kim ,  Joonyong Park ,  Seogwoo Hong

IPC: H01L21/67 ,  H01L21/673 ,  H01L21/68

CPC classification number: H01L21/67132 ,  H01L21/68 ,  H01L21/67051 ,  H01L21/67333

Abstract: A micro-semiconductor chip transfer apparatus includes: a wet chip supply module configured to supply a plurality of micro-semiconductor chips and liquid onto a transfer substrate; a chip alignment module including an absorber configured to move along a surface of the transfer substrate while absorbing the liquid; and a chip extraction module configured to extract, from the absorber, the micro-semiconductor chips remaining in the absorber.

公开(公告)号：US11588046B2

公开(公告)日：2023-02-21

申请号：US17386729

申请日：2021-07-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongchul Shin ,  Boram Kim ,  Younghwan Park ,  Jongseob Kim ,  Joonyong Kim ,  Junhyuk Park ,  Jaejoon Oh ,  Minchul Yu ,  Soogine Chong ,  Sunkyu Hwang ,  Injun Hwang

IPC: H01L29/778 ,  H01L29/205 ,  H01L29/20

Abstract: A high electron mobility transistor (HEMT) includes a channel layer, a plurality of barrier layers, and a p-type semiconductor layer. The barrier layers have an energy band gap greater than that of the channel layer. A gate electrode is arranged on the p-type semiconductor layer. A source electrode and a drain electrode are apart from the p-type semiconductor layer and the gate electrode on the barrier layers. Impurity concentrations of the barrier layers are different from each other in a drift area between the source electrode and the drain electrode.

公开(公告)号：US11106886B2

公开(公告)日：2021-08-31

申请号：US16922185

申请日：2020-07-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinmyoung Kim ,  Huijin Lee ,  Minchul Yu

IPC: G06K9/00 ,  G06F3/044 ,  G06F3/041

Abstract: Provided are a combined fingerprint recognition touch sensor, an electronic apparatus including the same, and a fingerprint enrollment method to which the same is applied. The combined fingerprint recognition touch sensor includes parallel transmission lines extending in a touch sensing region, and a plurality of parallel reception lines extending in the touch sensing region to intersect the transmission lines. A signal transmitter includes a plurality of transmission groups so as to apply driving signals to the transmission lines. A storage is configured to store an enrolled fingerprint image to be compared with an enrolled fingerprint for fingerprint authentication. In the fingerprint enrollment mode, a fingerprint image of a finger is obtained through one touch operation by applying driving signals to transmission lines belonging to two or more transmission groups and reading a fingerprint image of a sensing zone including an initial touch region and a surrounding region.