公开(公告)号：US11195496B2

公开(公告)日：2021-12-07

申请号：US16922071

申请日：2020-07-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Nam ,  Eunji Kim ,  Sangik Bang

IPC: G09G5/36

Abstract: An electronic device and method are disclosed herein. The electronic device includes a display and processor. The processor implements the method including executing an application, and based on detecting a frame drop, identifying an insertion position of an interpolation image for a plurality of images generated by execution of the application. An interpolation image is generated based on the identified insertion position and the interpolation image is inserted into the plurality of images at the identified insertion position.

公开(公告)号：US11133240B2

公开(公告)日：2021-09-28

申请号：US16794782

申请日：2020-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hakseung Lee ,  Jinnam Kim ,  Kwangjin Moon ,  Eunji Kim ,  Taeseong Kim ,  Sangjun Park

IPC: H01L23/48 ,  H01L25/18 ,  H01L21/768 ,  H01L25/065 ,  H01L23/00

Abstract: A semiconductor device includes a semiconductor substrate including at least one semiconductor structure, an interlayer insulating layer disposed on the semiconductor substrate, at least one first via structure penetrating the semiconductor substrate and the interlayer insulating layer, including a first region having a first width at an upper surface of the interlayer insulating layer and a second region extending from the first region and having a second width at a lower surface of the semiconductor substrate, wherein a side surface of the first region and a side surface of the second region have different profiles at a boundary between the first region and the second region, and at least one second via structure penetrating the semiconductor substrate and the interlayer insulating layer and having a third width greater than the first width at an upper surface of the interlayer insulating layer.

公开(公告)号：US20210202458A1

公开(公告)日：2021-07-01

申请号：US17030887

申请日：2020-09-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Uidam Jung ,  Youngbum Woo ,  Byungkyu Kim ,  Eunji Kim ,  Seungwoo Paek

IPC: H01L25/18 ,  H01L27/11582 ,  H01L27/11565 ,  H01L23/00

Abstract: A semiconductor device includes an insulating structure; a plurality of horizontal layers vertically stacked and spaced apart from each other in the insulating structure; a conductive material pattern contacting the insulating structure; and a vertical structure penetrating through the plurality of horizontal layers and extending into the conductive material pattern in the insulating structure. Each of the plurality of horizontal layers comprises a conductive material, the vertical structure comprises a vertical portion and a protruding portion, the vertical portion of the vertical structure penetrates through the plurality of horizontal layers, the protruding portion of the vertical structure extends from the vertical portion into the conductive material pattern, a width of the vertical portion is greater than a width of the protruding portion, and a side surface of the protruding portion is in contact with the conductive material pattern.

公开(公告)号：US12058392B2

公开(公告)日：2024-08-06

申请号：US17603134

申请日：2021-09-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Boyoung Lee ,  Koanmo Kim ,  Eunji Kim ,  Jiwon Kim ,  Jaehong Lee

IPC: H04N21/2343 ,  H04N21/218 ,  H04N21/81

CPC classification number: H04N21/234345 ,  H04N21/21805 ,  H04N21/816

Abstract: A method of transmitting video content by using an edge computing service (e.g., a multi-access edge computing (MEC) service) is provided. The method includes obtaining sensor information including orientation information and pupil position information from an electronic device connected to the edge data network, obtaining a first partial image including a user field-of-view image and an extra field-of-view image, the user field-of-view image corresponding to the orientation information, and the extra field-of-view image corresponding to the pupil position information, generating a first frame by encoding the first partial image, and transmitting the generated first frame to the electronic device.

公开(公告)号：US11810549B2

公开(公告)日：2023-11-07

申请号：US17337921

申请日：2021-06-03

Applicant: Samsung Electronics Co., Ltd. ,  Seoul National University, R&DB Foundation

Inventor： Sungroh Yoon ,  Eunji Kim ,  Heeseung Kim

IPC: G10L15/22 ,  G10L15/06 ,  G10L15/16

CPC classification number: G10L15/063 ,  G10L15/16 ,  G10L15/22 ,  G10L2015/223 ,  G10L2015/227

Abstract: A computing device trains a position optimization model for determining, from among a plurality of positions, one or more optimal positions on a face based on a training data set including facial skin strain data at the plurality of positions. The computing device trains a speech classification model for classifying a voice from the facial skin strain data based on the training data at the one or more optimal positions determined by the position optimization model among the training data set.

公开(公告)号：US11798866B2

公开(公告)日：2023-10-24

申请号：US17808533

申请日：2022-06-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunji Kim ,  Sungdong Cho ,  Kwangwuk Park ,  Sangjun Park ,  Daesuk Lee ,  Hakseung Lee

IPC: H01L23/48 ,  H01L21/768 ,  H01L25/18 ,  H01L23/528 ,  H01L23/498 ,  H01L21/3065

CPC classification number: H01L23/481 ,  H01L21/76898 ,  H01L25/18 ,  H01L21/3065

Abstract: A semiconductor device includes a semiconductor substrate having an active surface on which semiconductor elements are provided. An interlayer insulating film is provided on the semiconductor substrate. A first via structure passes through the semiconductor substrate. The first via structure has a first diameter. A second via structure passes through the semiconductor substrate. The second via structure has a second diameter that is greater than the first diameter. The first via structure has a step portion that is in contact with the interlayer insulating film.

公开(公告)号：US11735498B2

公开(公告)日：2023-08-22

申请号：US17213767

申请日：2021-03-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangwuk Park ,  Youngmin Lee ,  Sungdong Cho ,  Eunji Kim ,  Hyoungyol Mun ,  Seokhwan Jeong

IPC: H01L23/48 ,  H01L21/762 ,  H01L25/065 ,  H01L21/768

CPC classification number: H01L23/481 ,  H01L21/76232

Abstract: A semiconductor includes a substrate having a first surface and a second surface opposite to each other, the substrate having a via hole extending in a thickness direction from the first surface, a circuit pattern in the first surface of the substrate, a through electrode structure in the via hole, a device isolation structure in a first trench extending in one direction in the first surface of the substrate, the device isolation structure between the via hole and the circuit pattern, the device isolation structure including a first oxide layer pattern and a first nitride layer pattern sequentially stacked on an inner surface of the first trench, the first nitride layer pattern filling the first trench, and an insulation interlayer on the first surface of the substrate and covering the circuit pattern.

公开(公告)号：US11380606B2

公开(公告)日：2022-07-05

申请号：US16932726

申请日：2020-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunji Kim ,  Sungdong Cho ,  Kwangwuk Park ,  Sangjun Park ,  Daesuk Lee ,  Hakseung Lee

IPC: H01L23/48 ,  H01L21/768 ,  H01L25/18 ,  H01L23/528 ,  H01L23/498 ,  H01L23/522 ,  H01L21/3065

Abstract: A semiconductor device includes a semiconductor substrate having an active surface on which semiconductor elements are provided. An interlayer insulating film is provided on the semiconductor substrate. A first via structure passes through the semiconductor substrate. The first via structure has a first diameter. A second via structure passes through the semiconductor substrate. The second via structure has a second diameter that is greater than the first diameter. The first via structure has a step portion that is in contact with the interlayer insulating film.

公开(公告)号：US20210020543A1

公开(公告)日：2021-01-21

申请号：US16794782

申请日：2020-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hakseung Lee ,  Jinnam Kim ,  Kwangjin Moon ,  Eunji Kim ,  Taeseong Kim ,  Sangjun Park

IPC: H01L23/48 ,  H01L25/18 ,  H01L21/768 ,  H01L23/00

Abstract: A semiconductor device includes a semiconductor substrate including at least one semiconductor structure, an interlayer insulating layer disposed on the semiconductor substrate, at least one first via structure penetrating the semiconductor substrate and the interlayer insulating layer, including a first region having a first width at an upper surface of the interlayer insulating layer and a second region extending from the first region and having a second width at a lower surface of the semiconductor substrate, wherein a side surface of the first region and a side surface of the second region have different profiles at a boundary between the first region and the second region, and at least one second via structure penetrating the semiconductor substrate and the interlayer insulating layer and having a third width greater than the first width at an upper surface of the interlayer insulating layer.