Abstract:
A photoelectric conversion device of an image sensor includes a first transparent electrode layer, an active layer, and a second transparent electrode layer, which are sequentially stacked. A light having a wavelength of about 440 nm-480 nm is absorbed within a depth of about ⅕ of an entire thickness of the active layer from both the top and bottom surfaces of the active layer.
Abstract:
Example embodiments relate to an organic photoelectronic device including a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, wherein the active layer includes a first compound represented by the following Chemical Formula 1, and an image sensor including the organic photoelectronic device.
Abstract:
Example embodiments relate to an organic photoelectronic device that includes a first electrode, a light-absorption layer on the first electrode and including a first p-type light-absorption material and a first n-type light-absorption material, a light-absorption auxiliary layer on the light-absorption layer and including a second p-type light-absorption material or a second n-type light-absorption material that have a smaller full width at half maximum (FWHM) than the FWHM of the light absorption layer, a charge auxiliary layer on the light-absorption auxiliary layer, and a second electrode on the charge auxiliary layer, and an image sensor including the same.
Abstract:
An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device sensing light in a first wavelength region and at least one second photo-sensing device sensing light in a second wavelength region shorter than the first wavelength region, a photoelectric device including a pair of electrodes facing each other and a light absorption layer between the electrodes, the photoelectric device selectively absorbing light in a third wavelength region between the first wavelength region and the second wavelength region, and a nanostructural body between the semiconductor substrate and the photoelectric device, the nanostructural body including at least two parts having different optical paths.
Abstract:
A bio imaging system includes a plurality of light emitters configured to irradiate light, and a plurality of sensors configured to detect light reflected by an internal tissue of a living body. Each sensor includes a plurality of photo-detecting elements having different absorption peak wavelengths in relation to each other.
Abstract:
A stretchable device includes a stretchable substrate, and a plurality of optoelectronic diodes on the stretchable substrate. At least one optoelectronic diode includes a first electrode and a second electrode, and an active layer between the first electrode and the second electrode. The active layer includes a first semiconductor, a second semiconductor having different electrical characteristics from the first semiconductor, and an insulating elastomer.
Abstract:
A stretchable device includes a stretchable substrate having a plurality of incision lines that are configured to be deformable by an external force applied to the stretchable substrate, a plurality of active elements on the stretchable substrate, and a connection wire configured to electrically connect adjacent active elements of the plurality of active elements, wherein the connection wire includes a metal wire and a conductive elastic structure electrically connected to the metal wire and locally disposed in the connection wire.
Abstract:
An image sensor includes a color filter array, a first photoelectric conversion device configured to absorb first light passing through the color filter array and convert the absorbed first light into electrical signals, and a second photoelectric conversion device configured to absorb second light passing through both the color filter array and the first photoelectric conversion device and convert the absorbed second light into electrical signals. The first photoelectric conversion device includes a first photoelectric conversion layer configured to selectively absorb a mixed light of the first and second colors. The second photoelectric conversion device comprises a second photoelectric conversion layer configured to absorb light including a third color. Each of the first to third colors is one of three primary colors. The image sensor combines the electrical signals converted from the first and second photoelectric conversion devices to obtain electrical signals of the first to third colors.
Abstract:
A compound of Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.
Abstract:
A stretchable strain sensor may exhibit wavelength selectivity according to a thickness change of a thickness of the stretchable strain sensor, in a thickness direction extending parallel to the thickness of the stretchable strain sensor, due to elongation of the stretchable strain sensor in an elongation direction extending perpendicular to the thickness direction. The stretchable strain sensor may have an emission spectrum that changes according to strain variation of a strain on the stretchable strain sensor.