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公开(公告)号：US20220238641A1
公开(公告)日：2022-07-28
申请号：US17412393
申请日：2021-08-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jung Min Park , Han Jin Lim , Kyoo Ho Jung , Cheol Jin Cho
IPC: H01L49/02
Abstract: Semiconductor devices are provided. The semiconductor devices includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, a capacitor dielectric film that is on the lower electrode and includes both a tetragonal crystal system and an orthorhombic crystal system, a first doping layer that is between the lower electrode and the capacitor dielectric film and includes a first metal, and an upper electrode on the capacitor dielectric film.
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公开(公告)号：US10090323B2
公开(公告)日：2018-10-02
申请号：US15484339
申请日：2017-04-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ji Hoon Choi , Sung Gil Kim , Seulye Kim , Jung Ho Kim , Hong Suk Kim , Phil Ouk Nam , Jae Young Ahn , Han Jin Lim
IPC: H01L29/792 , H01L27/11582 , H01L23/528 , H01L27/11565
Abstract: A semiconductor device includes a stack structure on a substrate, the stack structure including interlayer insulating layers and first gate electrodes alternately stacked on each other, a semiconductor layer in an opening penetrating through the stack structure, a first dielectric layer between the semiconductor layer and the stack structure, and a lower pattern closer to the substrate than to the first gate electrodes in the stack structure, the lower pattern including a first surface facing the first dielectric layer, and a second surface facing the stack structure, the second surface defining an acute angle with the first surface, wherein the first dielectric layer includes a first portion facing the stack structure, and a second portion facing the first surface of the lower pattern, the second portion having a thickness greater than a thickness of the first portion.
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公开(公告)号：US12230671B2
公开(公告)日：2025-02-18
申请号：US17412393
申请日：2021-08-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jung Min Park , Han Jin Lim , Kyoo Ho Jung , Cheol Jin Cho
Abstract: Semiconductor devices are provided. The semiconductor devices includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, a capacitor dielectric film that is on the lower electrode and includes both a tetragonal crystal system and an orthorhombic crystal system, a first doping layer that is between the lower electrode and the capacitor dielectric film and includes a first metal, and an upper electrode on the capacitor dielectric film.
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公开(公告)号：US12125872B2
公开(公告)日：2024-10-22
申请号：US18347850
申请日：2023-07-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Han Jin Lim , Ki Nam Kim , Hyung Suk Jung , Kyoo Ho Jung , Ki Hyun Hwang
CPC classification number: H01L28/56 , H01L21/02181 , H01L21/02189 , H01L21/02192 , H01L21/02197 , H01L21/28247 , H10B53/30 , H10B12/00
Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.
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Patent Agency Ranking
公开(公告)号：US11735637B2
公开(公告)日：2023-08-22
申请号：US17400901
申请日：2021-08-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Eunae Cho , Dongjin Lee , Ji Eun Lee , Kyoung-Ho Jung , Dong Su Ko , Yongsu Kim , Jiho Yoo , Sung Heo , Hyun Park , Satoru Yamada , Moonyoung Jeong , Sungjin Kim , Gyeongsu Park , Han Jin Lim
IPC: H01L29/423 , H01L29/49 , H01L21/28 , H01L29/51
CPC classification number: H01L29/4236 , H01L21/28088 , H01L29/4966 , H01L29/513 , H01L29/517
Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.
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公开(公告)号：US11322578B2
公开(公告)日：2022-05-03
申请号：US16590565
申请日：2019-10-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Han Jin Lim , Ki Nam Kim , Hyung Suk Jung , Kyoo Ho Jung , Ki Hyun Hwang
IPC: H01L49/02 , H01L21/02 , H01L21/28 , H01L27/11507 , H01L27/108
Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.
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公开(公告)号：US11189636B2
公开(公告)日：2021-11-30
申请号：US16870082
申请日：2020-05-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ji Hoon Choi , Sung Gil Kim , Seulye Kim , Jung Ho Kim , Hong Suk Kim , Phil Ouk Nam , Jae Young Ahn , Han Jin Lim
IPC: H01L27/11582 , H01L23/528 , H01L27/11565
Abstract: A semiconductor device includes a stack structure on a substrate, the stack structure including interlayer insulating layers and first gate electrodes alternately stacked on each other, a semiconductor layer in an opening penetrating through the stack structure, a first dielectric layer between the semiconductor layer and the stack structure, and a lower pattern closer to the substrate than to the first gate electrodes in the stack structure, the lower pattern including a first surface facing the first dielectric layer, and a second surface facing the stack structure, the second surface defining an acute angle with the first surface, wherein the first dielectric layer includes a first portion facing the stack structure, and a second portion facing the first surface of the lower pattern, the second portion having a thickness greater than a thickness of the first portion.
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公开(公告)号：US11127828B2
公开(公告)日：2021-09-21
申请号：US16432298
申请日：2019-06-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Eunae Cho , Dongjin Lee , Ji Eun Lee , Kyoung-Ho Jung , Dong Su Ko , Yongsu Kim , Jiho Yoo , Sung Heo , Hyun Park , Satoru Yamada , Moonyoung Jeong , Sungjin Kim , Gyeongsu Park , Han Jin Lim
IPC: H01L29/423 , H01L29/49 , H01L21/28 , H01L29/51
Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.
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公开(公告)号：US10651194B2
公开(公告)日：2020-05-12
申请号：US16142637
申请日：2018-09-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ji Hoon Choi , Sung Gil Kim , Seulye Kim , Jung Ho Kim , Hong Suk Kim , Phil Ouk Nam , Jae Young Ahn , Han Jin Lim
IPC: H01L29/792 , H01L27/11582 , H01L23/528 , H01L27/11565
Abstract: A semiconductor device includes a stack structure on a substrate, the stack structure including interlayer insulating layers and first gate electrodes alternately stacked on each other, a semiconductor layer in an opening penetrating through the stack structure, a first dielectric layer between the semiconductor layer and the stack structure, and a lower pattern closer to the substrate than to the first gate electrodes in the stack structure, the lower pattern including a first surface facing the first dielectric layer, and a second surface facing the stack structure, the second surface defining an acute angle with the first surface, wherein the first dielectric layer includes a first portion facing the stack structure, and a second portion facing the first surface of the lower pattern, the second portion having a thickness greater than a thickness of the first portion.
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