公开(公告)号：US20230085905A1

公开(公告)日：2023-03-23

申请号：US17690268

申请日：2022-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungyeon KWAK ,  Hyungjun KIM ,  Myungsun SIM ,  Kum Hee LEE ,  Sunghun LEE ,  Byoungki CHOI ,  Kyuyoung HWANG

IPC: H01L51/50

Abstract: Provided are a light-emitting device and an electronic apparatus including the light-emitting device. The light-emitting device may include: an emission layer between a first electrode and a second electrode. The emission layer may include i) a first emission layer and ii) a second emission layer between the first emission layer and the second electrode, the first emission layer may be in direct contact with the second emission layer, the first emission layer may include a first dopant, a first hole-transporting compound, and a first electron-transporting compound, the second emission layer may include a second dopant, a second hole-transporting compound, and a second electron-transporting compound, the first dopant may be identical to the second dopant, and the first electron-transporting compound may be different from the second electron-transporting compound, electron mobility of the second electron-transporting compound may be greater than electron mobility of the first electron-transporting compound.

公开(公告)号：US20220406884A1

公开(公告)日：2022-12-22

申请号：US17844896

申请日：2022-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungjun KIM ,  Changsoo LEE ,  Yong-Hee CHO ,  Yongsung KIM ,  Jooho LEE

IPC: H01L49/02 ,  H01L27/108

Abstract: Provided are a thin film structure, a capacitor including the thin film structure, a semiconductor device including the thin film structure, and a method of manufacturing the thin film structure, in which the thin film structure may include: a first electrode thin film disposed on a substrate and including a first perovskite-based oxide; and a protective film disposed on the first electrode thin film and including a second perovskite-based oxide that is oxygen-deficient and includes a doping element. The thin film structure may prevent the deterioration of conductivity and a crystalline structure of a perovskite-based oxide electrode, which is a lower electrode, even in a high-temperature oxidizing atmosphere for subsequent dielectric film deposition.

公开(公告)号：US20220069237A1

公开(公告)日：2022-03-03

申请号：US17195743

申请日：2021-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ohyun Kwon ,  Virendra Kumar RAI ,  Bumwoo PARK ,  Sangdong KIM ,  Hyungjun KIM ,  Myungsun SIM ,  Byoungki CHOI

IPC: H01L51/00 ,  C07F15/00 ,  C09K11/06

Abstract: Provided are an organometallic compound represented by Formula 1 and an organic light-emitting device including the same: M1(Ln1)n1(Ln2)3-n1  Formula 1 wherein, in Formula 1, Ln2 is a ligand represented by Formula 1A, and other substituents are the same as described in the detailed description of the present specification:

公开(公告)号：US20210122644A1

公开(公告)日：2021-04-29

申请号：US16819571

申请日：2020-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Giyoung JO ,  Chan KWAK ,  Hyungjun KIM ,  Euncheol DO ,  Hyeoncheol PARK ,  Changsoo LEE

IPC: C01G33/00 ,  H01L27/108 ,  H01L49/02

Abstract: A ternary paraelectric having a Cc structure and a method of manufacturing the same are provided. The ternary paraelectric having a Cc structure includes a material having a chemical formula of A2B4O11 that has a monoclinic system, is a space group No. 9, and has a dielectric constant of 150 to 250, wherein “A” is a Group 1 element, and “B” is a Group 5 element. “A” may include one of Na, K, Li and Rb. “B” may include one of Nb, V, and Ta. The A2B4O11 material may be Na2Nb4O11 in which bandgap energy thereof is greater than that of STO. The A2B4O11 material may have relative density that is greater than 90% or more.

公开(公告)号：US20210110975A1

公开(公告)日：2021-04-15

申请号：US17038904

申请日：2020-09-30

Applicant: Samsung Electronics Co., Ltd. ,  National Institute for Materials Science

Inventor： Hyungjun KIM ,  Taniguchi TAKAAKI ,  Sasaki TAKAYOSHI ,  Osada MINORU ,  Chan KWAK ,  Youngnam KWON ,  Changsoo LEE

IPC: H01G4/12 ,  H01L49/02 ,  H01G4/005

Abstract: Provided are a dielectric monolayer thin film, a capacitor and a semiconductor device each including the dielectric monolayer thin film, and a method of forming the dielectric monolayer thin film, the dielectric monolayer thin film including an oxide which is represented by Formula 1 and has a perovskite-type crystal structure, wherein the oxide has a surface chemically bonded with hydrogen. A2Bn−3CnO3n+1   wherein, in Formula 1, A is a divalent element, B is a monovalent element, C is a pentavalent element, and n is a number from 3 to 8.

公开(公告)号：US20180261388A1

公开(公告)日：2018-09-13

申请号：US15848562

申请日：2017-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Daejin YANG ,  Jong Wook ROH ,  Doh Won JUNG ,  Chan KWAK ,  Hyungjun KIM ,  Woojin LEE

IPC: H01G4/10 ,  H01G4/12 ,  B82B1/00 ,  B32B15/04

CPC classification number: H01G4/10 ,  B32B15/043 ,  B32B2307/204 ,  B82B1/005 ,  H01G4/1227

Abstract: A dielectric material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge, wherein the first layer and the second layer are alternately disposed; a monolayered nanosheet; a nanosheet laminate of the monolayered nanosheets; or a combination thereof, wherein the dielectric material includes a two-dimensional layered material having a two-dimensional crystal structure, wherein the two-dimensional layered material is represented by Chemical Formula 1 X2[A(n−1)MnO(3n+1)]  Chemical Formula 1 wherein, in Chemical Formula 1, X is H, an alkali metal, a cationic polymer, or a combination thereof, A is Ca, Sr, La, Ta, or a combination thereof, M is La, Ta, Ti, or a combination thereof, and n≥1.

公开(公告)号：US20240290821A1

公开(公告)日：2024-08-29

申请号：US18444162

申请日：2024-02-16

Applicant: Samsung Electronics Co., Ltd. ,  AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Hyungjun KIM ,  Sang Woon LEE ,  Se Eun KIM ,  Hye Min LEE ,  Jae Deock JEON ,  Cheheung KIM ,  Boeun PARK ,  Jooho LEE ,  Changsoo LEE

IPC: C23C16/455

CPC classification number: H01L28/55 ,  C23C16/45527 ,  H01L28/91

Abstract: A method of manufacturing, by atomic layer deposition, an electrode including a perovskite type crystal structure represented by Formula 1, includes: forming a vanadium-containing precursor on a substrate; forming a vanadium-containing intermediate phase by reacting the vanadium-containing precursor with oxygen molecules; and forming a first thin film by reacting the vanadium-containing intermediate phase with water.






wherein, in Formula 1,
0.3≤x≤0.7, and
2.5≤y≤3.0.

公开(公告)号：US20240220786A1

公开(公告)日：2024-07-04

申请号：US18604268

申请日：2024-03-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungju RYU ,  Hyungjun KIM ,  Jae-Joon KIM

IPC: G06N3/063 ,  G06F7/485 ,  G06F7/523

CPC classification number: G06N3/063 ,  G06F7/485 ,  G06F7/523

Abstract: Disclosed is a neural network accelerator including a first bit operator generating a first multiplication result by performing multiplication on first feature 5 bits of input feature data and first weight bits of weight data, a second bit operator generating a second multiplication result by performing multiplication on second feature bits of the input feature data and second weight bits of the weight data, an adder generating an addition result by performing addition based on the first multiplication result and the second multiplication result, a shifter shifting a number 10 of digits of the addition result depending on a shift value to generate a shifted addition result and an accumulator generating output feature data based on the shifted addition result.

公开(公告)号：US20230402497A1

公开(公告)日：2023-12-14

申请号：US18312383

申请日：2023-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungjun KIM ,  Boeun PARK ,  Jeongil BANG ,  Cheheung KIM ,  Jooho LEE

IPC: H01L21/02 ,  H01G4/10

CPC classification number: H01L28/55 ,  H10B12/30 ,  H01L28/91 ,  H01L28/75 ,  H01G4/10

Abstract: A capacitor may include a first thin-film electrode layer; a second thin-film electrode layer; and a dielectric layer between the first thin-film electrode layer and the second thin-film electrode layer. The first thin-film electrode layer and the second thin-film electrode layer may include a conductive perovskite-type crystal structure. The dielectric layer may include a metal oxide having a dielectric perovskite-type crystal structure. The dielectric layer may be an epitaxial layer. The metal oxide may include a first element in a cubooctahedral site, a second element in an octahedral site, and a third element in an octahedral site. A valency of the third element may be lower than a valency of the second element, and the third element may be a dopant.

公开(公告)号：US20230276692A1

公开(公告)日：2023-08-31

申请号：US18173162

申请日：2023-02-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungjun KIM ,  Byungjoon Kang ,  Seungyeon KWAK ,  Sungmin KIM ,  Juhee MOON ,  Sunghun LEE ,  Shingo ISHIHARA ,  Byoungki CHOI

IPC: H10K85/30 ,  H10K50/11 ,  H10K50/15

CPC classification number: H10K85/342 ,  H10K50/11 ,  H10K50/15 ,  H10K85/361 ,  H10K2101/30

Abstract: Provided are a light-emitting device and an electronic apparatus including the light-emitting device, the light-emitting device including: a first electrode; a second electrode; an emission layer arranged between the first electrode and the second electrode; and a buffer layer arranged between the first electrode and the emission layer, wherein the buffer layer is in direct contact with the emission layer, the emission layer includes a first compound represented by Formula 1, and the buffer layer includes a second compound represented by Formula 5. The first compound and the second compound are respectively the same as those described in the present specification.