公开(公告)号：US11494244B2

公开(公告)日：2022-11-08

申请号：US16943280

申请日：2020-07-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun Yeal Hong ,  Ji Hun Kim ,  Hye Soon Jeong ,  Dae Sik Hwang ,  Sung Jun Kim

IPC: G06F3/04886 ,  G06F9/54

Abstract: A multi-window control method and an electronic device supporting the same is provided. The multi-window control method includes changing a size of at least one specific window among a plurality of windows, and altering a focus to the at least one specific window based on a changed size of the at least one specific window.

公开(公告)号：US10754711B2

公开(公告)日：2020-08-25

申请号：US15834657

申请日：2017-12-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun Yeal Hong ,  Ji Hun Kim ,  Hye Soon Jeong ,  Dae Sik Hwang ,  Sung Jun Kim

IPC: G06F3/0488 ,  G06F9/54

Abstract: A multi-window control method and an electronic device supporting the same is provided. The multi-window control method includes changing a size of at least one specific window among a plurality of windows, and altering a focus to the at least one specific window based on a changed size of the at least one specific window.

公开(公告)号：US09891965B2

公开(公告)日：2018-02-13

申请号：US14587486

申请日：2014-12-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun Yeal Hong ,  Ji Hun Kim ,  Hye Soon Jeong ,  Dae Sik Hwang ,  Sung Jun Kim

IPC: G06F3/048 ,  G06F9/54 ,  G06F3/0488

CPC classification number: G06F9/542 ,  G06F3/04886 ,  G06F2203/04803

Abstract: A multi-window control method and an electronic device supporting the same is provided. The multi-window control method includes changing a size of at least one specific window among a plurality of windows, and altering a focus to the at least one specific window based on a changed size of the at least one specific window.

公开(公告)号：US09842841B2

公开(公告)日：2017-12-12

申请号：US14849651

申请日：2015-09-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Hun Kim ,  Ilgweon Kim ,  Junhwa Song ,  Jeonghoon Oh ,  WonSeok Yoo ,  Eun-Sun Lee

IPC: H01L21/8242 ,  H01L21/762 ,  H01L21/311 ,  H01L27/108 ,  H01L21/8234 ,  H01L21/8238 ,  H01L49/02

CPC classification number: H01L27/10894 ,  H01L21/76224 ,  H01L21/823412 ,  H01L21/823807 ,  H01L27/10805 ,  H01L27/10814 ,  H01L27/10817 ,  H01L27/1085 ,  H01L27/10855 ,  H01L27/10873 ,  H01L27/10891 ,  H01L28/91

Abstract: A method of fabricating a semiconductor device, the method including etching a portion of a substrate including a first region and a second region to form a device isolation trench; forming a device isolation layer defining active regions by sequentially stacking a first insulating layer, a second insulating layer, and a third insulating layer on an inner surface of the device isolation trench; forming word lines buried in the substrate of the first region, the word lines extending in a first direction to intersect the active region of the first region, the word lines being spaced apart from each other; forming a first mask layer covering the word lines on the substrate of the first region, the first mask layer exposing the substrate of the second region; forming a channel layer on the substrate of the second region; and forming a gate electrode on the channel layer.

公开(公告)号：US20240128109A1

公开(公告)日：2024-04-18

申请号：US18484562

申请日：2023-10-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hun Kim ,  Youn Gon Oh ,  Woo-Ram Moon ,  Sang Hyuk Park ,  Jong Hun Lee ,  Kyu-Sik Jeong

IPC: H01L21/677 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/67706 ,  H01L21/67259 ,  H01L21/67715 ,  H01L21/67733 ,  H01L21/68764

Abstract: An apparatus for manufacturing a semiconductor device includes a substrate transfer unit configured to transfer a substrate, a rail unit including a driving rail extending in a first direction that the substrate transfer unit moves and a stopper on a side of the driving rail in a second direction crossing the first direction, and a lifting unit configured to move in the first direction and a third direction perpendicular to the first and second directions to remove the substrate transfer unit from the rail unit, wherein the lifting unit is configured to contact the stopper to move the stopper from a closed state to an open state.

公开(公告)号：US10134740B2

公开(公告)日：2018-11-20

申请号：US15644877

申请日：2017-07-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Wan Kim ,  Ji Hun Kim ,  Jae Joon Song ,  Hiroshi Takeda ,  Jung Hoon Han

IPC: H01L27/108 ,  H01L29/423 ,  H01L29/49 ,  H01L29/06 ,  H01L23/528 ,  H01L21/28 ,  H01L21/02

Abstract: A semiconductor device including a substrate; a trench formed within the substrate; a gate insulating film formed conformally along a portion of a surface of the trench; a gate electrode formed on the gate insulating film and filling a portion of the trench; a capping film formed on the gate electrode and filling the trench; and an air gap formed between the capping film and the gate insulating film.