公开(公告)号：US09647016B2

公开(公告)日：2017-05-09

申请号：US14340719

申请日：2014-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Sun Oh ,  Kyung-Ho Lee ,  Jung-Chak Ahn ,  Hee-Geun Jeong

IPC: H01L27/14 ,  H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14603 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/02016

Abstract: Provided is a complementary metal-oxide-semiconductor (CMOS) image sensor. The CMOS image sensor can include a substrate having a first device isolation layer defining and dividing a first active region and a second active region, a photodiode disposed in the substrate and can be configured to vertically overlap the first device isolation layer, a transfer gate electrode can be disposed in the first active region and can be configured to vertically overlap the photodiode, and a floating diffusion region can be in the first active region. The transfer gate electrode can be buried in the substrate.

公开(公告)号：US09293501B2

公开(公告)日：2016-03-22

申请号：US13838627

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Chak Ahn

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464

Abstract: An image sensor having pixels that include two patterned semiconductor layers. The top patterned semiconductor layer contains the photoelectric elements of pixels having substantially 100% fill-factor. The bottom patterned semiconductor layer contains transistors for detecting, resetting, amplifying and transmitting signals charges received from the photoelectric elements. The top and bottom patterned semiconductor layers may be separated from each other by an interlayer insulating layer that may include metal interconnections for conducting signals between devices formed in the patterned semiconductor layers and from external devices.

公开(公告)号：US20130207219A1

公开(公告)日：2013-08-15

申请号：US13838627

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Jung-Chak Ahn

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464

Abstract: An image sensor having pixels that include two patterned semiconductor layers. The top patterned semiconductor layer contains the photoelectric elements of pixels having substantially 100% fill-factor. The bottom patterned semiconductor layer contains transistors for detecting, resetting, amplifying and transmitting signals charges received from the photoelectric elements. The top and bottom patterned semiconductor layers may be separated from each other by an interlayer insulating layer that may include metal interconnections for conducting signals between devices formed in the patterned semiconductor layers and from external devices.

Abstract translation: 具有包括两个图案化半导体层的像素的图像传感器。 顶部图案化的半导体层包含具有基本上100％填充因子的像素的光电元件。 底部图案化的半导体层包含用于检测，复位，放大和传输从光电元件接收的电荷的晶体管。 顶部和底部图案化的半导体层可以通过层间绝缘层彼此分离，层间绝缘层可以包括用于在形成在图案化的半导体层中的器件与外部器件之间传导信号的金属互连。

公开(公告)号：US10249677B2

公开(公告)日：2019-04-02

申请号：US15937632

申请日：2018-03-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Chak Ahn

IPC: H01L27/146

Abstract: An image sensor having pixels that include two patterned semiconductor layers. The top patterned semiconductor layer contains the photoelectric elements of pixels having substantially 100% fill-factor. The bottom patterned semiconductor layer contains transistors for detecting, resetting, amplifying and transmitting signals charges received from the photoelectric elements. The top and bottom patterned semiconductor layers may be separated from each other by an interlayer insulating layer that may include metal interconnections for conducting signals between devices formed in the patterned semiconductor layers and from external devices.

公开(公告)号：US09837465B2

公开(公告)日：2017-12-05

申请号：US15453410

申请日：2017-03-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Chak Ahn ,  Bum-Suk Kim

IPC: H01L21/77 ,  H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14687

Abstract: An image sensor includes a plurality of photoelectric detectors, a plurality of color filters, and at least one pixel isolation region between adjacent ones of the photoelectric detectors. The color filters include a white color filter, and the color filters correspond to respective ones of the photoelectric detectors. The at least one pixel isolation region serves to physically and at least partially optically separate the photoelectric detectors from one another.

公开(公告)号：US09245920B2

公开(公告)日：2016-01-26

申请号：US13757925

申请日：2013-02-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Chak Ahn

IPC: H04N3/14 ,  H01L27/146 ,  H04N5/355 ,  H04N5/374

CPC classification number: H01L27/14665 ,  H04N5/35572 ,  H04N5/3559 ,  H04N5/374

Abstract: A method of driving an image sensor including a plurality of unit pixels, each unit pixel having photoelectric conversion and floating diffusion regions, may include resetting a potential level of the floating diffusion region by a first voltage level, the first voltage level being lower than a power supply voltage; converting incident light into electrical charges in the photoelectric conversion region; and accumulating at least one of collected, first overflowed, and second overflowed electrical charges in the floating diffusion region based on the incident light, the collected electrical charges indicating electrical charges that are collected in the photoelectric conversion region, the first overflowed electrical charges indicating charges overflowed from the photoelectric conversion region within potential well capacity of the floating diffusion region, and the second overflowed electrical charges indicating charges overflowed from the photoelectric conversion region over the potential well capacity of the floating diffusion region.

Abstract translation: 驱动包括多个单位像素的图像传感器的方法，具有光电转换和浮动扩散区域的每个单位像素可以包括将浮动扩散区域的电位电平重置第一电压电平，第一电压电平低于 电源电压; 将入射光转换成光电转换区域中的电荷; 并且基于所述入射光在所述浮动扩散区域中累积收集的，第一溢出的和第二溢出的电荷中的至少一个，所述收集的电荷指示在所述光电转换区域中收集的电荷，所述第一溢出电荷指示电荷 从浮动扩散区域的潜在阱容量内的光电转换区域溢出，并且指示电荷从浮动扩散区域的潜在阱容量从光电转换区域溢出的第二溢出电荷。

公开(公告)号：US08958002B2

公开(公告)日：2015-02-17

申请号：US14064812

申请日：2013-10-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Jun Choi ,  Yoon-Dong Park ,  Chris Hong ,  Dae-Lok Bae ,  Jung-Chak Ahn ,  Chang-Rok Moon ,  June-Mo Koo ,  Suk-Pil Kim ,  Hoon-Sang Oh

IPC: H04N3/14 ,  H04N5/335 ,  H01L27/146

CPC classification number: H01L27/14641 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14612 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14687 ,  H01L2224/9212 ,  H01L2224/80896 ,  H01L2224/8203 ,  H01L2224/821 ,  H01L2224/80001 ,  H01L2224/82

Abstract: An image sensor includes a first substrate including a driving element, a first insulation layer on the first substrate and on the driving element, a second substrate including a photoelectric conversion element, and a second insulation layer on the second substrate and on the photoelectric conversion element. A surface of the second insulation layer is on an upper surface of the first insulation layer. The image sensor includes a conductive connector penetrating the second insulation layer and a portion of the first insulation layer. Methods of forming image sensors are also disclosed.

Abstract translation: 图像传感器包括：第一基板，包括驱动元件，第一基板上的第一绝缘层和驱动元件;第二基板，包括光电转换元件;以及第二绝缘层，在第二基板上和光电转换元件 。 第二绝缘层的表面位于第一绝缘层的上表面上。 图像传感器包括穿透第二绝缘层和第一绝缘层的一部分的导电连接器。 还公开了形成图像传感器的方法。

公开(公告)号：US20130334577A1

公开(公告)日：2013-12-19

申请号：US13766803

申请日：2013-02-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Chak Ahn

IPC: H01L27/148

CPC classification number: H01L27/14818 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/1464

Abstract: An image sensor including a semiconductor layer including a plurality of unit pixels each including a photoelectric conversion device and read devices; and an insulating layer including a light-shielding pattern defining a light-receiving region and a light-shielding region of the semiconductor layer, the insulating layer covering one surface of the semiconductor layer. The semiconductor layer further includes a potential drain region formed adjacent to an interface between the semiconductor layer and an insulating layer in the light-shielding region, wherein electrons generated due to defects occurring at the interface are accumulated in the potential drain region. At least one of the unit pixels in the light-shielding region provides a drain path for draining the electrons accumulated in the potential drain region.

Abstract translation: 一种图像传感器，包括：包括多个单位像素的半导体层，每个单位像素包括光电转换装置和读取装置; 以及绝缘层，所述绝缘层包括限定所述半导体层的光接收区域和遮光区域的遮光图案，所述绝缘层覆盖所述半导体层的一个表面。 半导体层还包括与遮光区域中的半导体层和绝缘层之间的界面相邻形成的电位漏极区域，其中由于在界面处发生的缺陷产生的电子积聚在电位漏极区域中。 遮光区域中的单位像素中的至少一个提供用于排出蓄积在电位漏区域中的电子的漏极路径。

公开(公告)号：US20130221410A1

公开(公告)日：2013-08-29

申请号：US13738134

申请日：2013-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Chak Ahn

IPC: H01L31/0232 ,  H01L31/09

CPC classification number: H01L27/14612 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/1464 ,  H01L31/0232 ,  H01L31/09

Abstract: A unit pixel of an image sensor includes a photoelectric conversion region, an isolation region, a floating diffusion region and a transfer gate. The photoelectric conversion region is formed in a semiconductor substrate. The isolation region surrounds the photoelectric conversion region, extends substantially vertically with respect to a first surface of the semiconductor substrate, and crosses the incident side of the photoelectric conversion region so as to block leakage light and diffusion carriers. The floating diffusion region is disposed in the semiconductor substrate above the photoelectric conversion region. The transfer gate is disposed adjacent to the photoelectric conversion region and the floating diffusion region, extends substantially vertically with respect to the first surface of the semiconductor substrate, and transmits the photo-charges from the photoelectric conversion region to the floating diffusion region.

公开(公告)号：US11094732B2

公开(公告)日：2021-08-17

申请号：US16285686

申请日：2019-02-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Chak Ahn

IPC: H01L27/146

Abstract: An image sensor having pixels that include two patterned semiconductor layers. The top patterned semiconductor layer contains the photoelectric elements of pixels having substantially 100% fill-factor. The bottom patterned semiconductor layer contains transistors for detecting, resetting, amplifying and transmitting signals charges received from the photoelectric elements. The top and bottom patterned semiconductor layers may be separated from each other by an interlayer insulating layer that may include metal interconnections for conducting signals between devices formed in the patterned semiconductor layers and from external devices.