公开(公告)号：US20170287971A1

公开(公告)日：2017-10-05

申请号：US15283698

申请日：2016-10-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gae Hwang LEE ,  Kwang Hee LEE ,  Kyu Sik Kim ,  Sung Young YUN ,  Dong-Seok LEEM ,  Yong Wan JIN

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/1461 ,  H01L27/14636

Abstract: An image sensor includes a semiconductor substrate and a photoelectric conversion device on the semiconductor substrate and including a plurality of pixel electrodes, a light absorption layer, and a common electrode. The plurality of pixel electrodes may include a first pixel electrode and a second pixel electrode. The photoelectric conversion device may include a first photoelectric conversion region defined in an overlapping region with the first pixel electrode, the light absorption layer, and the common electrode, and a second photoelectric conversion region defined in an overlapping region with the second pixel electrode, the light absorption layer, and the common electrode. Sensitivity of the first photoelectric conversion region may be higher than sensitivity of the second photoelectric conversion region. An electronic device may include the image sensor.

公开(公告)号：US09379343B2

公开(公告)日：2016-06-28

申请号：US13957994

申请日：2013-08-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Seok Leem ,  Kyu Sik Kim ,  Jung Woo Kim ,  Kyung Bae Park ,  Kwang Hee Lee ,  Seon Jeong Lim

IPC: H01L29/08 ,  H01L51/52 ,  H01L51/44 ,  H01L51/00

CPC classification number: H01L51/442 ,  H01L51/0021 ,  H01L51/5203 ,  H01L51/5215 ,  H01L51/5234 ,  Y02E10/549

Abstract: According to example embodiments, a transmissive electrode may include a light transmission layer. The light transmission layer may include a metal and a metal oxide that is included in a smaller amount than the metal. According to example embodiments, an organic photoelectric device, as well as an image sensor, may include the transmissive electrode.

Abstract translation: 根据示例性实施例，透射电极可以包括光透射层。 光透射层可以包括金属和金属氧化物，其包含在比金属少的量中。 根据示例性实施例，有机光电装置以及图像传感器可以包括透射电极。

公开(公告)号：US11114634B2

公开(公告)日：2021-09-07

申请号：US16031412

申请日：2018-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Bae Park ,  Kyu Sik Kim ,  Yong Wan Jin ,  Kwang Hee Lee ,  Dong-Seok Leem ,  Seon-Jeong Lim

IPC: H01L51/42

Abstract: A photodiode according to example embodiments includes an anode, a cathode, and an intrinsic layer between the anode and the cathode. The intrinsic layer includes a P-type semiconductor and an N-type semiconductor, and composition ratios of the P-type semiconductor and the N-type semiconductor vary within the intrinsic layer depending on a distance of the intrinsic layer from one of the anode and the cathode.

公开(公告)号：US10181497B2

公开(公告)日：2019-01-15

申请号：US15409656

申请日：2017-01-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Heo ,  Kyu Sik Kim ,  Nam Jeong Kim ,  Seong Heon Kim ,  Yongsung Kim ,  Eunae Cho ,  Takkyun Ro ,  Dongjin Yun ,  Yongsu Kim ,  Wenxu Xianyu ,  Yong-Young Park ,  Kyung Bae Park

IPC: H01L27/30 ,  H01L51/44 ,  H01L51/50 ,  H01L51/52 ,  H01L27/146 ,  H01L51/56 ,  H01L51/42

Abstract: An optoelectronic device includes a first electrode and a second electrode facing each other a photoelectric conversion layer between the first electrode and the second electrode and a buffer layer between the photoelectric conversion layer and the second electrode. The buffer layer includes a nitride. The nitride includes one of silicon nitride (SiNx, 0

公开(公告)号：US09961790B2

公开(公告)日：2018-05-01

申请号：US15512275

申请日：2015-08-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyu Sik Kim ,  Gi Eun Lee

IPC: D06F37/20 ,  H05K1/02 ,  H05K7/06 ,  H05K10/00 ,  H05K5/06

CPC classification number: H05K5/065 ,  D06F37/20 ,  D06F39/005 ,  H05K1/02 ,  H05K3/28 ,  H05K5/069 ,  H05K7/06 ,  H05K10/00 ,  H05K2201/0195 ,  H05K2201/09909 ,  H05K2203/0588 ,  H05K2203/1147

Abstract: A printed circuit board (PCB) having an improved waterproof structure for preventing corrosion of a substrate is disclosed. A plurality of screen-printed protrusions is provided at the PCB surface. The plurality of protrusions allow water to be formed in waterdrops so that the waterdrops can flow to the outside of the PCB. The PCB is arranged to have a tilted structure for facilitating discharge of the water. The tilted structure discharges waterdrops to a lower side of the PCB. The PCB and a PCB assembly having the same are applicable to electronic appliances such as a washing machine.

公开(公告)号：US09620657B2

公开(公告)日：2017-04-11

申请号：US14174211

申请日：2014-02-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gae Hwang Lee ,  Kyu Sik Kim ,  Yong Wan Jin

IPC: H01L27/146 ,  H01L31/0232

CPC classification number: H01L27/14625 ,  G02B27/1013 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L31/02327

Abstract: An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device sensing light in a first wavelength region and at least one second photo-sensing device sensing light in a second wavelength region shorter than the first wavelength region, a photoelectric device including a pair of electrodes facing each other and a light absorption layer between the electrodes, the photoelectric device selectively absorbing light in a third wavelength region between the first wavelength region and the second wavelength region, and a nanostructural body between the semiconductor substrate and the photoelectric device, the nanostructural body including at least two parts having different optical paths.

公开(公告)号：US09362327B2

公开(公告)日：2016-06-07

申请号：US14560920

申请日：2014-12-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong Wan Jin ,  Kyu Sik Kim ,  Kyung Bae Park ,  Kwang Hee Lee ,  Dong-Seok Leem ,  Deukseok Chung

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636

Abstract: An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device configured to sense light in a blue wavelength region and at least one second photo-sensing device configured to sense light in a red wavelength region, a color filter layer on the semiconductor substrate and including a blue color filter configured to selectively absorb light in a blue wavelength region and a red color filter configured to selectively absorb light in a red wavelength region, and a third photo-sensing device on the color filter layer and including a pair of electrodes facing each other, and a photoactive layer between the pair of electrodes and configured to selectively absorb light in a green wavelength region.

Abstract translation: 图像传感器包括集成有至少一个第一光感测装置的半导体衬底，该第一光感测装置被配置为感测蓝色波长区域中的光，以及至少一个第二光感测装置，被配置为感测红色波长区域中的光，滤色器层 半导体衬底并且包括被配置为选择性地吸收蓝色波长区域中的光的蓝色滤色器和被配置为选择性地吸收红色波长区域中的光的红色滤色器以及滤色器层上的第三感光装置，并且包括 一对电极彼此面对，以及一对电极之间的光活性层，并且被配置为选择性地吸收绿色波长区域中的光。

公开(公告)号：US09343502B2

公开(公告)日：2016-05-17

申请号：US14336439

申请日：2014-07-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyu Sik Kim ,  Ryuichi Satoh ,  Kyung Bae Park ,  Chul Joon Heo ,  Yong Wan Jin

IPC: H01L27/146 ,  H01L51/44 ,  H01L27/30 ,  H01L51/00 ,  H01L51/42

CPC classification number: H01L27/14645 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14643 ,  H01L27/307 ,  H01L51/0068 ,  H01L51/4273 ,  H01L51/442 ,  H01L2251/305 ,  H01L2251/306 ,  H01L2251/308 ,  Y02E10/549

Abstract: Disclosed are an organic photoelectronic device including a first light-transmitting electrode, an active layer positioned on one side of the first light-transmitting electrode, and a second light-transmitting electrode positioned on one side of the active layer, wherein the first light-transmitting electrode and the second light-transmitting electrode independently comprise at least one of indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO), aluminum tin oxide (ATO), aluminum zinc oxide (AZO), and fluorine-doped tin oxide (FTO). Also disclosed is an image sensor including the organic photoelectronic device.

Abstract translation: 公开了一种有机光电子器件，其包括第一透光电极，位于第一透光电极一侧的有源层和位于有源层一侧的第二透光电极，其中， 透明电极和第二透光电极独立地包括氧化铟锡（ITO），氧化铟锌（IZO），氧化锡（SnO），氧化铝（ATO），氧化铝锌（AZO）和氧化铝 氟掺杂氧化锡（FTO）。 还公开了包括有机光电子器件的图像传感器。

公开(公告)号：US10707432B2

公开(公告)日：2020-07-07

申请号：US14186075

申请日：2014-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Bae Park ,  Kyu Sik Kim ,  Kwang Hee Lee ,  Dong-Seok Leem ,  Seon-Jeong Lim

IPC: H01L51/44 ,  H01L27/30

Abstract: Disclosed are a photoelectronic device including a first electrode including a first metal; an active layer disposed between the first electrode and a second electrode; and a diffusion barrier layer disposed between the first electrode and the active layer; the diffusion barrier layer including a second metal, wherein the second metal has a thermal diffusivity that is lower than a thermal diffusivity of the first metal, and wherein the first electrode and the diffusion barrier layer are configured to transmit light, and an image sensor including the photoelectronic device.

公开(公告)号：US10256414B2

公开(公告)日：2019-04-09

申请号：US14521840

申请日：2014-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seon-Jeong Lim ,  Kyung Bae Park ,  Dong-Seok Leem ,  Moon Gyu Han ,  Kyu Sik Kim ,  Takkyun Ro ,  Kwang Hee Lee ,  Yong Wan Jin ,  Chul Joon Heo

IPC: H01L27/30 ,  H01L51/00 ,  H01L51/42

Abstract: Disclosed are an organic photoelectronic device including a first electrode and a second electrode facing each other and an active layer interposed between the first electrode and the second electrode, wherein the active layer includes a p-type semiconductor compound represented by the formula C22R1—R12O2N2 and an n-type semiconductor compound having a maximum absorption peak at a wavelength region of about 500 nm to about 600 nm, and an image sensor including the organic photoelectronic device.