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公开(公告)号:US12014991B2
公开(公告)日:2024-06-18
申请号:US17951474
申请日:2022-09-23
Inventor: Keunwook Shin , Kibum Kim , Hyunmi Kim , Hyeonjin Shin , Sanghun Lee
IPC: H01L23/538 , H01L23/00 , H01L23/532 , H01L29/16
CPC classification number: H01L23/5386 , H01L23/53204 , H01L23/5329 , H01L24/19 , H01L29/1606
Abstract: An interconnect structure may include a graphene-metal barrier on a substrate and a conductive layer on the graphene-metal barrier. The graphene-metal barrier may include a plurality of graphene layers and metal particles on grain boundaries of each graphene layer between the plurality of graphene layers. The metal particles may be formed at a ratio of 1 atom % to 10 atom % with respect to carbon of the plurality of graphene layers.
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公开(公告)号:US11985374B2
公开(公告)日:2024-05-14
申请号:US17021565
申请日:2020-09-15
Applicant: Samsung Electronics Co., Ltd.
Inventor: Taehyung Kim , Sanghun Lee , Seula Lee , Younglok Lee , Hyunkyoung Kim , Sungho Park , Woonghee Park , Yeonhwa Oh , Yun Jegal
IPC: G06F3/14 , G06F3/04817 , G06F3/04842 , H04M1/72412 , H04N7/00 , H04N21/422 , H04N21/433 , H04N21/4363 , H04N21/472 , H04N21/81 , H04N21/436
CPC classification number: H04N21/42204 , G06F3/04817 , G06F3/04842 , G06F3/1454 , H04M1/72412 , H04N7/00 , H04N21/4333 , H04N21/43637 , H04N21/472 , H04N21/47217 , H04N21/8153 , G09G2370/16 , H04N21/4222 , H04N21/43615
Abstract: A method of an electronic device for controlling sharing of video and an electronic device adapted to the method are provided. The electronic device includes a display, a communication circuit, a control circuit, and a memory electrically connected to the control circuit, where the memory stores instructions enabling the control circuit to control the communication circuit to transmit a first video to an external device connected to the electronic device, when a video sharing function is executed, display an icon on the display, when transmitting the first video, and control the communication circuit to pause the transmission of the first video and to transmit a second video to the external device, in response to a first input applied to the icon.
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公开(公告)号:US20230403010A1
公开(公告)日:2023-12-14
申请号:US18175795
申请日:2023-02-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyunyoon Cho , Eunseok Shin , Youngdon Choi , Jaeduk Han , Hyuntae Kim , Jeonghyu Yang , Sanghun Lee
IPC: H03K19/096 , H03K5/15
CPC classification number: H03K19/096 , H03K5/15013
Abstract: A parallel-to-serial converter includes first to fourth input nodes configured to receive first to fourth data input signals, respectively, and an output node configured to output a data output signal. First to fourth logic circuits are provided, which are configured to electrically couple respective ones of the first to fourth input nodes one-at-a-time to the output node, in synchronization with first to fourth clock signals. The first logic circuit includes a first input circuit, a second input circuit, and an output circuit electrically coupled to the first and second input circuits. The output circuit includes a first pull-up transistor and a first pull-down transistor having drain terminals coupled to the output node, a second pull-up transistor connected between a source terminal of the first pull-up transistor and a first power supply node, and a second pull-down transistor connected between a source terminal of the first pull-down transistor and a second power supply node.
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公开(公告)号:US10205861B2
公开(公告)日:2019-02-12
申请号:US14719850
申请日:2015-05-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sanghun Lee , Changyoung Park , Yonghwa Park
Abstract: A transmissive optical shutter and a method of fabricating the same are provided. The transmissive optical shutter includes a first contact layer, an epitaxial layer disposed over the first contact layer, the epitaxial layer being configured to modulate intensity of incident light having a specific wavelength, a second contact layer disposed on the epitaxial layer, a first electrode disposed on the first contact layer, at least one second electrode disposed on the second contact layer, and a substrate disposed under the first contact layer.
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公开(公告)号:US11933514B2
公开(公告)日:2024-03-19
申请号:US17283101
申请日:2019-10-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jaehong Kim , Yongwon Jeong , Joonho Kim , Jangpyo Park , Sanghun Lee
CPC classification number: F24F11/65 , F24F5/0046 , F24F8/20 , F24F8/80 , F24F8/95 , F24F2005/0064 , F24F2110/66
Abstract: An air conditioner is disclosed. The air conditioner comprises a storage, and a processor for identifying a target space on the basis of first gas sensing data, moving the air conditioner to the target space, acquiring information about a gas type on the basis of second gas sensing data sensed within the target space and reference data stored in the storage, and performing an air conditioning operation on the basis of the information about the gas type, wherein the gas sensing data is sensed by a sensor comprising a plurality of sensing modules that react to different gases.
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公开(公告)号:US11817527B2
公开(公告)日:2023-11-14
申请号:US17217552
申请日:2021-03-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Changyoung Park , Sanghun Lee
CPC classification number: H01L33/30 , H01L33/0066 , H01L33/04 , H01L33/58
Abstract: An optical device includes a multilayered GaAs structure including a plurality of sublayers and an optical structure layer on the multilayered GaAs structure, the optical structure layer including a Group III-V compound semiconductor material. The optical structure layer may be, for example, a light-emitting layer having a multi-quantum well structure.
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公开(公告)号:US20230170430A1
公开(公告)日:2023-06-01
申请号:US17734414
申请日:2022-05-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Changyoung Park , Sanghun Lee
IPC: H01L31/0392 , H01L31/0304 , H01L31/107 , H01L31/18
CPC classification number: H01L31/0392 , H01L31/0304 , H01L31/107 , H01L31/1852
Abstract: Provided is a high-quality substrate including a silicon layer, a multilayer buffer layer on the silicon layer, and an indium phosphide (InP) layer on the multilayer buffer layer, wherein a crystal growth direction of the silicon layer is a direction inclined by 1° to 10° with respect to a vertical direction, and wherein the multilayer buffer layer includes a buffer layer in which a crystal growth direction is inclined with respect to the vertical direction.
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公开(公告)号:US20230085092A1
公开(公告)日:2023-03-16
申请号:US17976419
申请日:2022-10-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Changyoung Park , Sanghun Lee
Abstract: An optical device includes a multilayered GaAs structure including a plurality of sublayers and an optical structure layer on the multilayered GaAs structure, the optical structure layer including a Group III-V compound semiconductor material. The optical structure layer may be, for example, a light-emitting layer having a multi-quantum well structure.
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公开(公告)号:US11256461B2
公开(公告)日:2022-02-22
申请号:US16497960
申请日:2018-03-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Donghyun Jo , Taehyung Kim , Jinbong Ryu , Myeongseok Lee , Sanghun Lee , Donghyun Yeom
Abstract: An electronic device comprises a communication module, a display, a processor, and a memory, wherein the memory can control the communication module such that the processor performs a communication connection for screen sharing with an external electronic device, can acquire display information of the external electronic device from the external electronic device, can generate one or more pieces of transmission screen information on the basis of at least the display information of the electronic device or the display information of the external electronic device, and can determine the resolution or the screen ratio of the transmission screen information on the basis of at least the screen ratio of the external electronic device.
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公开(公告)号:US10811604B2
公开(公告)日:2020-10-20
申请号:US16144257
申请日:2018-09-27
Inventor: Minhyun Lee , Seongjun Park , Hyunjae Song , Hyeonjin Shin , Kibum Kim , Sanghun Lee , Yunho Kang
IPC: H01L45/00 , H01L21/768 , G11C13/00
Abstract: A nonvolatile memory apparatus includes a first electrode, a second electrode separated from the first electrode, a resistive-change material layer provided between the first electrode and the second electrode and configured to store information due to a resistance change caused by an electrical signal applied through the first electrode and the second electrode, and a diffusion prevention layer provided between the first electrode and the resistive-change material layer and/or between the second electrode and the resistive-change material layer and including a two-dimensional (2D) material having a monolayer thickness of about 0.35 nm or less.
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