公开(公告)号：US11011516B2

公开(公告)日：2021-05-18

申请号：US16705799

申请日：2019-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-han Lee ,  Sun-ghil Lee ,  Myung-il Kang ,  Jeong-yun Lee ,  Seung-hun Lee ,  Hyun-jung Lee ,  Sun-wook Kim

IPC: H01L27/088 ,  H01L27/11 ,  H01L29/06 ,  H01L27/02 ,  H01L21/8234 ,  H01L27/092 ,  H01L29/66

Abstract: An integrated circuit (IC) device includes a first and a second fin-type active region protruding from a first region and a second region, respectively, of a substrate, a first and a second gate line, and a first and a second source/drain region. The first fin-type active region has a first top surface and a first recess has a first depth from the first top surface. The first source/drain region fills the first recess and has a first width. The second fin-type active region has a second top surface and a second recess has a second depth from the second top surface. The second depth is greater than the first depth. The second source/drain region fills the second recess and has a second width. The second width is greater than the first width.

公开(公告)号：US10672764B2

公开(公告)日：2020-06-02

申请号：US16174894

申请日：2018-10-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-hoon Kim ,  Dong-myoung Kim ,  Jin-bum Kim ,  Seung-hun Lee ,  Cho-eun Lee ,  Hyun-jung Lee ,  Sung-uk Jang ,  Edward Namkyu Cho ,  Min-hee Choi

IPC: H01L27/085 ,  H01L29/06 ,  H01L29/423 ,  H01L27/088 ,  H01L21/8234

Abstract: A semiconductor device includes a first region having a first active pattern with first protrusion portions and first recess portions, and a second region having a second active pattern with second protrusion portions and second recess portions. First gate patterns are on the first protrusion portions. Second gate patterns are on the second protrusion portions. A first source/drain region is on one of the first recess portion of the first active pattern between two of the first gate patterns. The first source/drain region has a first reinforcing epitaxial layer at an upper portion thereof. A second source/drain region is on one of the second recess portions of the second active pattern between two of the second gate patterns. The second source/drain region has a second reinforcing epitaxial layer having an epitaxial growth surface that is shaped differently than a first epitaxial growth surface of the first reinforcing epitaxial layer.

公开(公告)号：US20190252376A1

公开(公告)日：2019-08-15

申请号：US16174894

申请日：2018-10-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-hoon Kim ,  Dong-myoung Kim ,  Jin-bum Kim ,  Seung-hun Lee ,  Cho-eun Lee ,  Hyun-jung Lee ,  Sung-uk Jang ,  Edward Namkyu Cho ,  Min-hee Choi

IPC: H01L27/085 ,  H01L29/423 ,  H01L29/06

Abstract: A semiconductor device includes a first region having a first active pattern with first protrusion portions and first recess portions, and a second region having a second active pattern with second protrusion portions and second recess portions. First gate patterns are on the first protrusion portions. Second gate patterns are on the second protrusion portions. A first source/drain region is on one of the first recess portion of the first active pattern between two of the first gate patterns. The first source/drain region has a first reinforcing epitaxial layer at an upper portion thereof. A second source/drain region is on one of the second recess portions of the second active pattern between two of the second gate patterns. The second source/drain region has a second reinforcing epitaxial layer having an epitaxial growth surface that is shaped differently than a first epitaxial growth surface of the first reinforcing epitaxial layer.

公开(公告)号：US10319841B2

公开(公告)日：2019-06-11

申请号：US15870549

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Edward Namkyu Cho ,  Bo-ra Lim ,  Geum-jung Seong ,  Seung-hun Lee

IPC: H01L29/66 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/308 ,  H01L21/02 ,  H01L29/78 ,  H01L29/08

Abstract: An integrated circuit device includes: a first fin active region extending in a first direction parallel to a top surface of a substrate; a second fin active region extending in the first direction and spaced apart from the first fin active region in a second direction different from the first direction; a gate line intersecting the first and second fin active regions; a first source/drain region on one side of the gate line in the first fin active region; and a second source/drain region on one side of the gate line in the second fin active region and facing the first source/drain region, wherein a cross-section of the first source/drain region perpendicular to the first direction has an asymmetric shape with respect to a center line of the first source/drain region in the second direction extending in a third direction perpendicular to the top surface of the substrate.

公开(公告)号：US20180010243A1

公开(公告)日：2018-01-11

申请号：US15407129

申请日：2017-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-yun Lee ,  Ju-hyun Lee ,  Kee-soo Park ,  Kyu-hee Han ,  Seung-hun Lee ,  Byung-chul Jeon

IPC: C23C14/58 ,  H01L21/78 ,  C23C16/56 ,  C23C16/455 ,  H01L21/02 ,  H01L21/66 ,  H01L21/67

CPC classification number: C23C14/5813 ,  C23C16/24 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/52 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/67253 ,  H01L21/78 ,  H01L22/26

Abstract: Provided are a deposition process monitoring system capable of detecting an internal state of a chamber in a deposition process, and a method of controlling the deposition process and a method of fabricating a semiconductor device using the system. The deposition process monitoring system includes a facility cover configured to define a space for a deposition process, a chamber located in the facility cover, covered with a translucent cover dome, and having a support on which a deposition target is placed, a plurality of lamps disposed in the facility cover, the lamps respectively disposed above and below the chamber, the lamps configured to supply radiant heat energy into the chamber during the deposition process, and a laser sensor disposed outside the chamber, the laser sensor configured to irradiate the cover dome with a laser beam and detect an intensity of the laser beam transmitted through the cover dome, wherein a state of by-products with which the cover dome is coated is determined based on the detected intensity of the laser beam.

公开(公告)号：US20160108575A1

公开(公告)日：2016-04-21

申请号：US14679416

申请日：2015-04-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-mo Lee ,  Seung-hun Lee

IPC: D06F37/40 ,  D06F33/02 ,  D06F23/04

CPC classification number: D06F37/40 ,  D06F23/04 ,  D06F33/02 ,  D06F2212/00 ,  D06F2700/00

Abstract: A washing machine, a method and computer readable recording medium. The washing machine includes a washing spindle and a spin-drying spindle, a coupling that is movable to be engaged with a rotation preventing unit of the washing machine so that power of the driving motor is transferred to the washing spindle but not to the spin-drying spindle, and is movable to a position in which the coupling is not engaged with the rotation preventing unit so that power of the driving motor is transferred to both the washing spindle and the spin-drying spindle, and a control device configured to, in a washing mode of the washing machine, bring the coupling into contact with the rotation preventing unit, cause the coupling to rotate in first and second directions so that the coupling is engaged with the rotation preventing unit, and determine an engagement state by test-operating the driving motor.

Abstract translation: 洗衣机，方法和计算机可读记录介质。 洗衣机包括清洗主轴和旋转干燥主轴，可移动以与洗衣机的旋转防止单元接合的联接器，使得驱动电动机的动力传递到洗涤主轴而不转移到洗涤主轴， 干燥主轴，并且可移动到联接器不与旋转防止单元接合的位置，使得驱动电动机的动力被传递到洗涤主轴和旋转干燥主轴;以及控制装置， 洗衣机的洗涤模式，使联轴器与旋转防止单元接触，使得联接器在第一和第二方向上旋转，使得联接器与旋转防止单元接合，并且通过测试操作来确定接合状态 驱动电机。

公开(公告)号：US12027586B2

公开(公告)日：2024-07-02

申请号：US18347090

申请日：2023-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cho-eun Lee ,  Seok-hoon Kim ,  Sang-gil Lee ,  Edward Cho ,  Min-hee Choi ,  Seung-hun Lee

IPC: H01L29/08 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/78

CPC classification number: H01L29/0847 ,  H01L21/823418 ,  H01L21/823425 ,  H01L21/823814 ,  H01L29/785

Abstract: A semiconductor device includes: a fin-type active region extending on a substrate in a first direction that is parallel to an upper surface of the substrate; and a source/drain region in a recess region extending into the fin-type active region, wherein the source/drain region includes: a first source/drain material layer; a second source/drain material layer on the first source/drain material layer; and a first dopant diffusion barrier layer on an interface between the first source/drain material layer and the second source/drain material layer.

公开(公告)号：US11735631B2

公开(公告)日：2023-08-22

申请号：US17470288

申请日：2021-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cho-eun Lee ,  Seok-hoon Kim ,  Sang-gil Lee ,  Edward Namkyu Cho ,  Min-hee Choi ,  Seung-hun Lee

IPC: H01L29/08 ,  H01L29/78 ,  H01L21/8238 ,  H01L21/8234

CPC classification number: H01L29/0847 ,  H01L21/823418 ,  H01L21/823425 ,  H01L21/823814 ,  H01L29/785

Abstract: A semiconductor device includes: a fin-type active region extending on a substrate in a first direction that is parallel to an upper surface of the substrate; and a source/drain region in a recess region extending into the fin-type active region, wherein the source/drain region includes: a first source/drain material layer; a second source/drain material layer on the first source/drain material layer; and a first dopant diffusion barrier layer on an interface between the first source/drain material layer and the second source/drain material layer.

公开(公告)号：US11145720B2

公开(公告)日：2021-10-12

申请号：US16453347

申请日：2019-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cho-eun Lee ,  Seok-hoon Kim ,  Sang-gil Lee ,  Edward Namkyu Cho ,  Min-hee Choi ,  Seung-hun Lee

IPC: H01L29/08 ,  H01L29/78 ,  H01L21/8238 ,  H01L21/8234

Abstract: A semiconductor device includes: a fin-type active region extending on a substrate in a first direction that is parallel to an upper surface of the substrate; and a source/drain region in a recess region extending into the fin-type active region, wherein the source/drain region includes: a first source/drain material layer; a second source/drain material layer on the first source/drain material layer; and a first dopant diffusion barrier layer on an interface between the first source/drain material layer and the second source/drain material layer.

公开(公告)号：US10950499B2

公开(公告)日：2021-03-16

申请号：US16868811

申请日：2020-05-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-yeong Joe ,  Seok-hoon Kim ,  Jeong-ho Yoo ,  Seung-hun Lee ,  Geun-hee Jeong

IPC: H01L21/768 ,  H01L23/528

Abstract: An integrated circuit device includes a fin-type active region extending on a substrate in a first direction parallel to a top surface of the substrate; a gate structure extending on the fin-type active region and extending in a second direction parallel to the top surface of the substrate and different from the first direction; and source/drain regions in a recess region extending from one side of the gate structure into the fin-type active region, the source/drain regions including an upper semiconductor layer on an inner wall of the recess region, having a first impurity concentration, and including a gap; and a gap-fill semiconductor layer, which fills the gap and has a second impurity concentration that is greater than the first impurity concentration.