公开(公告)号：US11430808B2

公开(公告)日：2022-08-30

申请号：US16895364

申请日：2020-06-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungmin Song ,  Beyounghyun Koh ,  Yongjin Kwon ,  Kangmin Kim ,  Jaehoon Shin ,  JoongShik Shin ,  Sungsoo Ahn ,  Seunghwan Lee

IPC: H01L27/11582 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/1157

Abstract: A memory device includes a substrate; a stacked structure including a plurality of gate layers and a plurality of interlayer insulating layers that are alternately stacked on the substrate in a vertical direction, the stacked structure including a row of cutouts, each of the cutouts extending in a first horizontal direction and being configured to cut the plurality of gate layers, the cutouts being apart from each other and arranged in a cell region of the stacked structure in the first horizontal direction; and a row of channel structures, the channel structures being arranged in the cell region in the first horizontal direction, each of the channel structures extending in the vertical direction to penetrate the plurality of gate layers.

公开(公告)号：US11291023B2

公开(公告)日：2022-03-29

申请号：US16961466

申请日：2019-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Okyoung Choi ,  Hojoong Kwon ,  Myungkwang Byun ,  Hanseok Kim ,  Sungho Lee ,  Seunghwan Lee ,  Dowon Hyun

IPC: H04W72/12

Abstract: The present disclosure relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates beyond 4th-Generation (4G) communication system such as long term evolution (LTE). A terminal in a wireless communication system is provided. The terminal includes a transceiver, and at least one processor configured to receive, from a base station (BS), a beam failure recovery configuration comprising at least one reference signal for identifying a candidate beam for the beam failure recovery and associated random access (RA) parameters, identify the candidate beam for the beam failure recovery using the at least one reference signal, and perform a physical random access channel (PRACH) using the at least one reference signal and the associated RA parameters on the candidate beam for the beam failure recovery.

公开(公告)号：US10194549B2

公开(公告)日：2019-01-29

申请号：US13961317

申请日：2013-08-07

Applicant: Samsung Electronics Co. Ltd.

Inventor： Seunghwan Lee

IPC: G06F13/00 ,  H05K7/00 ,  G06F1/16

Abstract: A system and a method for supporting a hierarchical connection of an accessory apparatus to a terminal and other accessory apparatuses are provided. The accessory apparatus includes a terminal connection interface connecting to a terminal, at least one connection interface connecting at least one other accessory apparatus, and an apparatus controller setting and controlling the terminal to identify a resistance value corresponding to a particular accessory apparatus according to whether the at least one other accessory apparatus is connected.

公开(公告)号：US09647166B2

公开(公告)日：2017-05-09

申请号：US14554363

申请日：2014-11-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsup Choi ,  Wonjong Yoo ,  Deshun Qu ,  Changho Ra ,  Xiaochi Liu ,  Seunghwan Lee ,  Jia Lee

IPC: H01L31/054 ,  H01L29/06 ,  H01L31/032 ,  H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/18 ,  H01L31/022425 ,  H01L31/032 ,  H01L31/054 ,  Y02E10/52

Abstract: According to example embodiments, an electronic device includes a substrate, an insulating layer on the substrate, and a diode layer on the insulating layer. The diode layer includes a two dimensional (2D) material layer. The 2D material layer includes an N-type region and a P-type region. According to example embodiments, a method of manufacturing an electronic device includes forming an insulating film on a substrate, forming a 2D material layer on the insulating film, and dividing the 2D material layer into an N-type region and a P-type region.

公开(公告)号：US20240245275A1

公开(公告)日：2024-07-25

申请号：US18607620

申请日：2024-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Namki LEE ,  Changseok Oh ,  Seunghwan Lee ,  Chuljoo Kim ,  Yongheon Shin

IPC: A47L11/40

CPC classification number: A47L11/4011 ,  A47L11/4061 ,  A47L11/4066 ,  A47L2201/04

Abstract: A robot cleaner is provided. The robot cleaner according to the disclosure includes a driver including a drive motor configured to cause the robot cleaner to move, a memory storing information on a pollution map for the degree of pollution for each location in a map corresponding to a place in which the robot cleaner is located and information on locations of a plurality of objects on the map, and a processor, wherein the processor is configured to: identify a pollution source among the plurality of objects based on information on the locations of the plurality of objects and the pollution map, and control the driver to move the robot cleaner based on the location of the identified pollution source on the map.

公开(公告)号：US11864385B2

公开(公告)日：2024-01-02

申请号：US17718676

申请日：2022-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seunghwan Lee ,  Suhyeong Lee ,  Ju-Young Lim ,  Daehyun Jang ,  Sanghoon Jeong

IPC: H10B43/27 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/41 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40

CPC classification number: H10B43/27 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/41 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40

Abstract: Disclosed is a three-dimensional semiconductor memory device comprising intergate dielectric layers and electrode layers alternately stacked on a substrate, a vertical semiconductor pattern that penetrate the intergate dielectric layers and the electrode layers and extends into the substrate, blocking dielectric patterns between the vertical semiconductor pattern and the electrode layers, a tunnel dielectric layer between the blocking dielectric patterns and the vertical semiconductor pattern and in contact with the blocking dielectric patterns and simultaneously with the intergate dielectric layers, and first charge storage patterns between the blocking dielectric patterns and the tunnel dielectric layer. One of the first charge storage patterns is in contact with top and bottom surfaces of one of the blocking dielectric patterns.

公开(公告)号：US11646336B2

公开(公告)日：2023-05-09

申请号：US16941835

申请日：2020-07-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaekwan Seo ,  Boram Kim ,  Nosan Park ,  Jungkuk Park ,  Jinsu Park ,  Seunghwan Lee

IPC: H01L27/146

CPC classification number: H01L27/14627 ,  H01L27/14685 ,  H01L27/14605 ,  H01L27/14621

Abstract: Provided is an image sensor including a semiconductor substrate including a first surface and a second surface and a plurality of pixel regions spaced apart, the plurality of pixel regions including a first region including a plurality of image pixels configured to generate image data and a second region including a plurality of phase difference detection pixels configured to perform autofocusing, a first grid pattern including a plurality of groove portions disposed on the second surface, a plurality of first microlenses selectively disposed on bottom surfaces of the plurality of groove portions corresponding to at least one of the first region and the second region, a plurality of color filters filling the plurality of groove portions, respectively, a second grid pattern superimposed on the first grid pattern, and a plurality of second microlenses separated by the second grid pattern and disposed on the plurality of color filters, respectively.

公开(公告)号：US11469244B2

公开(公告)日：2022-10-11

申请号：US16853838

申请日：2020-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seunghwan Lee ,  Suhyeong Lee ,  Ju-Young Lim ,  Daehyun Jang ,  Sanghoon Jeong

IPC: H01L27/11582 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11573 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11529

Abstract: Disclosed is a three-dimensional semiconductor memory device comprising intergate dielectric layers and electrode layers alternately stacked on a substrate, a vertical semiconductor pattern that penetrate the intergate dielectric layers and the electrode layers and extends into the substrate, blocking dielectric patterns between the vertical semiconductor pattern and the electrode layers, a tunnel dielectric layer between the blocking dielectric patterns and the vertical semiconductor pattern and in contact with the blocking dielectric patterns and simultaneously with the intergate dielectric layers, and first charge storage patterns between the blocking dielectric patterns and the tunnel dielectric layer. One of the first charge storage patterns is in contact with top and bottom surfaces of one of the blocking dielectric patterns.

公开(公告)号：US20250120200A1

公开(公告)日：2025-04-10

申请号：US18884591

申请日：2024-09-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungyoon Min ,  JEONGJIN CHO ,  Seunghwan Lee ,  MINJI JUNG

IPC: H01L27/146

Abstract: Disclosed is an image sensor including first and second pixels adjacent along a first direction, a first micro lens disposed on the first and second pixels, a first pixel isolation structure disposed outside the first and second pixels and penetrating from a first surface of a substrate to a second surface of the substrate opposite the first surface of the substrate, and a first floating diffusion region disposed at the first pixel and the second pixel and adjacent to the first surface of the substrate. The first floating diffusion region may not overlap the first pixel isolation structure along a height direction perpendicular to the first and second surfaces of the substrate, and the first floating diffusion region between the first pixel and the second pixel may be disposed at a position corresponding to a center portion of the first micro lens along an optical axis direction.

公开(公告)号：US20240365059A1

公开(公告)日：2024-10-31

申请号：US18738773

申请日：2024-06-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kangwook Byun ,  Ungki Min ,  Seunghwan Lee ,  Jongdoo Kim ,  Youji Lee ,  Jaesun Lee ,  Gun Lim

IPC: H04R3/00 ,  H04R9/04

CPC classification number: H04R3/00 ,  H04R9/045 ,  H04R2420/05 ,  H04R2499/11

Abstract: An electronic device includes: a housing; a first speaker in the housing; and a printed circuit board in the housing and surrounding at least a portion of the first speaker, wherein the first speaker includes: a coil area in which a coil for an operation of the first speaker is disposed; a flexible board on an outer portion of the coil area and including a wire surrounding at least a portion of the coil area; and a connection terminal at one end of the flexible board and electrically connected to the printed circuit board.