公开(公告)号：US11869582B2

公开(公告)日：2024-01-09

申请号：US17510828

申请日：2021-10-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jiyoon Park ,  Sungwon Yun ,  Hyunjun Yoon ,  Wontaeck Jung

IPC: G11C16/04 ,  G11C11/56 ,  G11C16/10 ,  G11C16/34 ,  H01L25/18 ,  H01L23/00 ,  H01L25/065

CPC classification number: G11C11/5628 ,  G11C11/5671 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/3459 ,  H01L24/08 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/08145 ,  H01L2924/1431 ,  H01L2924/14511

Abstract: A method of operating a memory device that performs a plurality of program loops for a plurality of memory cells includes applying a first program pulse and a first verify pulse of a first program loop from among the plurality of program loops, counting a first off cell count by using an output based on the first verify pulse, determining a first verify skip period using the first off cell count, applying an N-th program pulse and a plurality of verify pulses in response to an end of the first verify skip period, counting a second off cell count by using an output based on the plurality of verify pulses, and determining a second verify skip period using the second off cell count.

公开(公告)号：US20230148408A1

公开(公告)日：2023-05-11

申请号：US17982550

申请日：2022-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jooyong Park ,  Wontaeck Jung ,  Nayeon Kim ,  Jiwon Seo ,  Seungyong Hyun

IPC: G11C16/34 ,  G11C16/08

CPC classification number: G11C16/3459 ,  G11C16/3468 ,  G11C16/08

Abstract: An operation method of a memory device for programming memory cells to a plurality of program states includes providing a series of program pulses to selected memory cells, performing a first verification operation of verifying a target program state among the plurality of program states, performing, when the first verification operation is passed, a second verification operation of detecting fail cells among the selected memory cells to determine if these memory cells have been overprogrammed. When the number of detected fail cells is greater than or equal to a reference value, the program operation may be terminated for that location and the data may be written to another location.

公开(公告)号：US11594293B2

公开(公告)日：2023-02-28

申请号：US17336910

申请日：2021-06-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Garam Kim ,  Hyunggon Kim ,  Jisang Lee ,  Joonsuc Jang ,  Wontaeck Jung

IPC: G11C16/12 ,  G11C16/34 ,  G11C16/24 ,  G11C16/26 ,  G11C16/30

Abstract: A memory device includes a memory cell array including a plurality of memory cells; a voltage generator configured to generate voltages used for a program operation and a verify operation for the memory cells; and control logic configured to perform a plurality of program loops while writing data to the memory cell array, such that first to N-th (e.g., N>=1) program loops including a program operation and a verify operation are performed and at least two program loops in which the verify operation is skipped are performed when a pass/fail determination of the program operation in the N-th program loop indicates a pass.

公开(公告)号：US20220028466A1

公开(公告)日：2022-01-27

申请号：US17324787

申请日：2021-05-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bohchang Kim ,  Wontaeck Jung ,  Kuihan Ko ,  Jaeyong Jeong

IPC: G11C16/34 ,  G11C16/10 ,  G11C16/14 ,  G11C16/26 ,  G11C29/42

Abstract: A memory device including: a memory cell array including a plurality of memory cells forming a plurality of strings in a vertical direction with a substrate; and a control logic configured to detect a not-open string (N/O string) from the plurality of strings in response to a write command and convert pieces of target data to be programmed on a plurality of target memory cells in the N/O string so that the pieces of target data have a value that limits a number of times a program voltage is applied to the plurality of target memory cells.