PLASMA ETCHING APPARATUS AND SEMICONDUCTOR PROCESSING SYSTEM

    公开(公告)号:US20230078095A1

    公开(公告)日:2023-03-16

    申请号:US17695062

    申请日:2022-03-15

    Abstract: A plasma etching apparatus includes a housing having a processing space; a support inside the housing, the support configured to support a substrate and including at least one lower electrode; at least one upper electrode facing the at least one lower electrode; a sidewall electrode disposed on a sidewall of the housing; a lower radiofrequency (RF) power source connected to the at least one lower electrode and configured to apply RF power; an upper RF power source connected to the at least one upper electrode and configured to apply RF power; a lower insulator adjacent to the at least one lower electrode; an upper insulator adjacent to the at least one upper electrode; at least one lower detector embedded in the lower insulator; and at least one upper detector embedded in the upper insulator.

    Display apparatus, electronic device including the same, and operating method thereof

    公开(公告)号:US10330971B2

    公开(公告)日:2019-06-25

    申请号:US15481812

    申请日:2017-04-07

    Abstract: A display apparatus, an electronic device including the same, and an operating method thereof are disclosed. The display apparatus may include: a window layer configured to contribute to at least one outward appearance of the display apparatus; a pixel layer including at least one pixel configured to display graphic information received from a processor that is functionally connected to the display apparatus, a driving wiring that drives the pixel, and a Black Matrix (BM) disposed in a BM area that does not include the at least one pixel; and a color layer disposed in at least one direction of the pixel layer, and configured to allow a designated color to be exposed to an outside through the window layer when the at least one pixel does not operate, wherein the pixel layer may include: a first substrate including a first plane facing a first direction, and a second plane facing a second direction opposite the first direction; and a pixel electrode, a light-emitter, a cathode, and a second substrate disposed between the first plane of the first substrate and the window layer, and wherein the color layer may be disposed in the BM area.

    Plasma control device and plasma processing system

    公开(公告)号:US11984297B2

    公开(公告)日:2024-05-14

    申请号:US17711181

    申请日:2022-04-01

    Abstract: A plasma control device includes a matching circuit, a resonance circuit, and a controller. The matching circuit is connected to a first electrode of a plasma chamber including the first electrode and a second electrode, and matches impedance of a radio frequency (RF) power by an RF driving signal with an impedance of the first electrode. The RF driving signal is based on a first RF signal having a first frequency. The resonance circuit is connected between the second electrode and a ground voltage, and controls plasma distribution within the plasma chamber by providing resonance with respect to harmonics associated with the first frequency and by adjusting a ground impedance between the second electrode and the ground voltage. The controller provides the resonance circuit with a capacitance control signal associated with the resonance and switch control signals associated with the ground impedance.

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