公开(公告)号：US12112866B2

公开(公告)日：2024-10-08

申请号：US17392772

申请日：2021-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeongjun Lee ,  Joo Young Kim ,  Youngjun Yun ,  Hyun Bum Kang ,  Jong Won Chung

IPC: H01B5/14 ,  C23C14/24 ,  H01B5/16 ,  H01L27/12 ,  H01L27/146 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01B5/14 ,  C23C14/24 ,  H01B5/16 ,  H01L27/1218 ,  H01L27/1244 ,  H01L27/14678 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78603

Abstract: A stacked structure for a stretchable device includes a stretchable layer including an elastic polymer, and a conductive layer on the stretchable layer and including a metal, wherein the stretchable layer includes a first depth region and a second depth region sequentially disposed in a depth direction from a surface of the stretchable layer that is in contact with the conductive layer and the first depth region includes the metal.

公开(公告)号：US20230341902A1

公开(公告)日：2023-10-26

申请号：US18175962

申请日：2023-02-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gae Hwang LEE ,  Youngjun Yun ,  Hyun Bum Kang ,  Jong Won Chung

IPC: G06F1/16

CPC classification number: G06F1/1652

Abstract: Provided are a flexible display panel and an electronic device including the same, in the flexible display panel that is foldable, bendable, or rollable along at least one axis extending in a first direction, the flexible display panel including a substrate including a stretchable region and a non-stretchable region, a plurality of pixel circuits repeatedly arranged on the substrate, and a unit element array including unit elements repeatedly arranged on the substrate and electrically connected to each of the pixel circuits, wherein each of the pixel circuits includes a plurality of thin film transistors, the plurality of thin film transistors include a first thin film transistor on the stretchable region of the substrate, and a channel length direction of the first thin film transistor is substantially parallel to the first direction flexible display panel.

公开(公告)号：US10899908B2

公开(公告)日：2021-01-26

申请号：US16458429

申请日：2019-07-01

Applicant: Samsung Electronics Co., Ltd. ,  THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY

Inventor： Youngjun Yun ,  Donghee Son ,  Jiheong Kang ,  Zhenan Bao ,  Orestis Vardoulis

IPC: C08K3/00 ,  H01B1/24 ,  C08K3/04 ,  H01L51/00 ,  C08K3/08 ,  H01L51/05 ,  H01L51/10 ,  H01L51/50 ,  H01L51/52

Abstract: A self-healing composite includes a matrix including an elastomer and conductive nanostructures embedded in the matrix, wherein the elastomer includes a polymer main chain, a —HN—C(═O)—NH— containing first structural unit capable of forming a strong hydrogen bond, and a —HN—C(═O)—NH— containing second structural unit capable of forming a weak hydrogen bond.

公开(公告)号：US10727426B2

公开(公告)日：2020-07-28

申请号：US15384968

申请日：2016-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ajeong Choi ,  Eun Kyung Lee ,  Joo Young Kim ,  Jeong Il Park ,  Youngjun Yun

IPC: H01L51/05 ,  H01L51/00

Abstract: A thin film transistor includes a gate electrode, an organic semiconductor overlapping the gate electrode, an insulator between the gate electrode and the organic semiconductor, and a source electrode and a drain electrode electrically connected to the organic semiconductor, respectively. The organic semiconductor is capable of being applied by a solution process, the insulator includes an inorganic insulating layer having a surface facing the organic semiconductor, and the surface includes a coating with a polysiloxane having an acrylic terminal group.

公开(公告)号：US20180233569A1

公开(公告)日：2018-08-16

申请号：US15864275

申请日：2018-01-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Suk Gyu Hahm ,  Jeong Il Park ,  Youngjun Yun ,  Joo Young Kim ,  Yong Uk Lee

IPC: H01L29/423 ,  H01L29/417 ,  H01L21/28 ,  H01L51/05

CPC classification number: H01L29/42384 ,  H01L21/28158 ,  H01L27/3274 ,  H01L29/41733 ,  H01L51/0533 ,  H01L51/0541 ,  H01L51/055

Abstract: A thin film transistor includes a gate electrode on a semiconductor layer, a first insulation layer between the semiconductor layer and the gate electrode, a second insulation layer on the gate electrode, and a source and drain electrode on the semiconductor layer. The gate electrode includes a first part and a second part adjacent to the first part. A width of the second part is greater than a width of the first part. The source electrode and the drain electrode are on the semiconductor layer and arranged such that the first part of the gate electrode is between the source electrode and the drain electrode. The source electrode and the drain electrode are electrically connected to the semiconductor layer through the first insulation layer and the second insulation layer, respectively. A space between the source electrode and the drain electrode is greater than the width of the first part.

公开(公告)号：US09942501B2

公开(公告)日：2018-04-10

申请号：US15031538

申请日：2014-10-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myounghoon Jung ,  Jungwoo Kim ,  Youngjun Yun ,  Seungeon Ahn

IPC: H04N5/335 ,  H04N5/3745 ,  H04N5/378 ,  H01L27/146

CPC classification number: H04N5/3745 ,  H01L27/14612 ,  H01L27/14643 ,  H04N5/378

Abstract: Provided are an image sensor compensating for property degradation of a metal-oxide-semiconductor (MOS) resulting from a threshold voltage shift that may occur when photodiodes and a MOS circuit of configuring an amplifier are integrated on the same substrate, and a method for driving the image sensor.

公开(公告)号：US12216109B2

公开(公告)日：2025-02-04

申请号：US17388630

申请日：2021-07-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun Bum Kang ,  Gae Hwang Lee ,  Jong Won Chung ,  Joo Young Kim ,  Youngjun Yun ,  Suk Gyu Hahm

IPC: G01N33/48 ,  H01L27/146 ,  H05K1/02 ,  H10K59/122

Abstract: A biosensor includes a stretchable substrate, a pixel defining layer on the stretchable substrate and including a first pixel defining layer at least partially defining a first opening and a second pixel defining layer at least partially defining a second opening, a photo-detecting element at least partially in the first opening, and a first light emitting element at least partially in the second opening, wherein an area of the first pixel defining layer is equal to or greater than about twice an area of the first opening.

公开(公告)号：US12167650B2

公开(公告)日：2024-12-10

申请号：US17530908

申请日：2021-11-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gae Hwang Lee ,  Youngjun Yun ,  Jong Won Chung

IPC: H01L27/32 ,  H10K39/32 ,  H10K59/121 ,  H10K59/131 ,  H10K77/10 ,  H10K102/00

Abstract: A flexible device includes a substrate including a first region having a first elastic modulus and a second region having a second elastic modulus that is lower than the first elastic modulus, a pixel circuit on the substrate, and a unit device electrically connected to the pixel circuit, wherein the pixel circuit includes a plurality of thin film transistors, a first portion of the plurality of thin film transistors is on the first region of the substrate, and a second portion of the plurality of thin film transistors is on the second region of the substrate.

公开(公告)号：US11765963B2

公开(公告)日：2023-09-19

申请号：US17954958

申请日：2022-09-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo Young Kim ,  Youngjun Yun ,  Don-Wook Lee

IPC: H10K77/10 ,  H10K59/60 ,  H10K59/122 ,  G01N27/30

CPC classification number: H10K77/111 ,  H10K59/122 ,  H10K59/60 ,  G01N27/30

Abstract: A stretchable device includes a substrate, the substrate including first regions having a first stiffness and a second region between adjacent first regions and having a second stiffness that is lower than the first stiffness, a unit device array including unit devices on separate, respective first regions of the substrate, and an encapsulant covering the unit device array. The unit device array includes pixel electrodes isolated on separate, respective first regions of the substrate, common electrodes isolated on separate, respective first regions and each facing a separate pixel electrode, the stretchable device configured to apply a same voltage to the plurality of common electrodes, and active layers on separate, respective first regions and each between a separate pixel electrode and a separate common electrode.

公开(公告)号：US11737346B2

公开(公告)日：2023-08-22

申请号：US17745155

申请日：2022-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangah Gam ,  Jong Won Chung ,  Hyun Bum Kang ,  Youngjun Yun ,  Yeongjun Lee

IPC: C08G61/00 ,  H01B1/00 ,  H10K85/10 ,  C08G61/12 ,  C08J5/18 ,  H01B1/12 ,  H10K10/46

CPC classification number: H10K85/113 ,  C08G61/126 ,  C08J5/18 ,  H01B1/121 ,  H10K85/151 ,  C08G2261/124 ,  C08G2261/1412 ,  C08G2261/18 ,  C08G2261/228 ,  C08G2261/3223 ,  C08G2261/3241 ,  C08G2261/3243 ,  C08G2261/3244 ,  C08G2261/92 ,  C08G2261/94 ,  C08G2261/95 ,  C08J2365/00 ,  H10K10/464 ,  H10K10/466 ,  H10K10/488

Abstract: Provided are a polymer semiconductor including a first structural unit represented by Chemical Formula 1 and a second structural unit represented by Chemical Formula 2, a stretchable polymer thin film including the same, and an electronic device.




Definitions of Chemical Formulas 1 and 2 are as described in the detailed description.