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公开(公告)号：US11917899B2
公开(公告)日：2024-02-27
申请号：US17193078
申请日：2021-03-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Masashi Tsuji , Takahiro Fujiyama , Yusaku Konishi , Dae Young Chung , Fumiaki Kato , Jaejun Chang , Keigo Furuta , Takao Motoyama , Eun Joo Jang , Hyo Sook Jang , Tae Ho Kim , Tomoyuki Kikuchi , Yuho Won
CPC classification number: H10K85/115 , C08G61/12 , C09K11/06 , H10K85/151 , C08G2261/124 , C08G2261/147 , C08G2261/148 , C08G2261/1412 , C08G2261/18 , C08G2261/228 , C08G2261/312 , C08G2261/3142 , C08G2261/3162 , C08G2261/95 , C09K2211/1416 , C09K2211/1425 , C09K2211/1433 , H10K50/15 , H10K50/17
Abstract: An arylamine-fluorene alternating copolymer having a structural unit (A) is represented by Chemical Formula (1):
wherein Chemical Formula (1) is the same as described in the detailed description.-
公开(公告)号：US11845888B2
公开(公告)日：2023-12-19
申请号：US17989035
申请日：2022-11-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yuho Won , Nayoun Won , Sungwoo Hwang , Eun Joo Jang , Soo Kyung Kwon , Yong Wook Kim , Jihyun Min , Garam Park , Shang Hyeun Park , Hyo Sook Jang , Shin Ae Jun , Yong Seok Han
IPC: C09K11/08 , C08L57/10 , G02F1/13357 , C09K11/02 , C09K11/56 , C09K11/70 , C09K11/88 , H05B33/14 , H10K50/115 , H10K59/38 , B82Y40/00 , B82Y20/00 , G02F1/1335
CPC classification number: C09K11/0883 , C08L57/10 , C09K11/025 , C09K11/565 , C09K11/70 , C09K11/883 , G02F1/133617 , H05B33/14 , H10K50/115 , H10K59/38 , B82Y20/00 , B82Y40/00 , C08L2203/20 , G02F1/133614 , G02F2202/022 , G02F2202/102 , G02F2202/36
Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.
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公开(公告)号：US11566345B2
公开(公告)日：2023-01-31
申请号：US16281232
申请日：2019-02-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin A Kim , Yuho Won , Sung Woo Kim , Tae Hyung Kim , Jeong Hee Lee , Eun Joo Jang
IPC: B32B5/16 , B05D7/00 , B82Y20/00 , C30B29/48 , C01G9/08 , H01L51/50 , H01L33/28 , C09K11/02 , C09K11/56 , C09K11/88 , H01L33/06 , B82Y40/00
Abstract: A semiconductor nanocrystal particle, a production method thereof, and a light emitting device including the same. The semiconductor nanocrystal particle includes a core including a first semiconductor nanocrystal, a first shell surrounding the core, the first shell including a second semiconductor nanocrystal including a different composition from the first semiconductor nanocrystal, a second shell surrounding the first shell, the second shell including a third semiconductor nanocrystal including a different composition from the second semiconductor nanocrystal, wherein the first semiconductor nanocrystal includes zinc and sulfur; wherein the third semiconductor nanocrystal includes zinc and sulfur; wherein an energy bandgap of the second semiconductor nanocrystal is less than an energy bandgap of the first semiconductor nanocrystal and less than an energy bandgap of the third semiconductor nanocrystal; and wherein the semiconductor nanocrystal particle does not include cadmium.
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14.发明授权公开(公告)号：US11563143B2
公开(公告)日：2023-01-24
申请号：US16998262
申请日：2020-08-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yong Seok Han , Sung Woo Kim , Jin A Kim , Tae Hyung Kim , Kun Su Park , Yuho Won , Jeong Hee Lee , Eun Joo Jang , Hyo Sook Jang
Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.
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公开(公告)号：US11512252B2
公开(公告)日：2022-11-29
申请号：US15251643
申请日：2016-08-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Garam Park , Eun Joo Jang , Yongwook Kim , Jihyun Min , Hyo Sook Jang , Shin Ae Jun , Taekhoon Kim , Yuho Won
Abstract: A semiconductor nanocrystal particle including: a core including a first semiconductor material; and a shell disposed on the core, wherein the shell includes a second semiconductor material, wherein the shell is free of cadmium, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.
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Patent Agency Ranking
公开(公告)号：US11193062B2
公开(公告)日：2021-12-07
申请号：US16825293
申请日：2020-03-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Garam Park , Tae Gon Kim , Nayoun Won , Shin Ae Jun , Soo Kyung Kwon , Seon-Yeong Kim , Shang Hyeun Park , Jooyeon Ahn , Yuho Won , Eun Joo Jang , Hyo Sook Jang
IPC: C09K11/88 , C09K11/62 , C09K11/70 , C09K11/56 , C09K11/02 , H01L27/32 , F21V8/00 , G02F1/1335 , G02F1/13357 , H05B33/14 , A61B6/06 , A61B6/00 , G01T7/00 , G21K1/02 , B82Y20/00 , B82Y40/00 , A61B6/02
Abstract: Disclosed are a quantum dot population including a plurality of cadmium free quantum dots, a quantum dot polymer composite including the same, and a display device including the same. The plurality of cadmium free quantum dots includes: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, wherein an average particle size of the plurality of cadmium free quantum dots is greater than or equal to about 5.5 nm, a standard deviation of particle sizes of the plurality of cadmium free quantum dots is less than or equal to about 20% of the average particle size, and an average solidity of the plurality of cadmium free quantum dots is greater than or equal to about 0.85.
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公开(公告)号：US10954440B2
公开(公告)日：2021-03-23
申请号：US16298108
申请日：2019-03-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yuho Won , Sung Woo Kim , Jin A Kim , Jeong Hee Lee , Tae Hyung Kim , Eun Joo Jang
Abstract: A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.
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18.发明授权公开(公告)号：US10590340B2
公开(公告)日：2020-03-17
申请号：US16245728
申请日：2019-01-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyo Sook Jang , Yuho Won , Sungwoo Hwang , Ji Yeong Kim , Eun Joo Jang
IPC: C09K11/08 , C08L57/10 , G02F1/1335 , H01L51/50 , H01L27/32 , C09D133/00 , C08F220/06 , C09D133/02 , B82Y20/00 , B82Y40/00
Abstract: A cadmium free quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core, wherein the quantum dot does not include cadmium and includes indium and zinc, the quantum dot has a maximum photoluminescence peak in a red light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than or equal to about 40 nanometers (nm), an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot includes a valley between about 450 nm to a center wavelength of a first absorption peak, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.2, a quantum dot polymer composite including the same, and a display device including the quantum dot-polymer composite: (Absfirst−Absvalley)/Absfirst=VD.
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公开(公告)号：US11982018B2
公开(公告)日：2024-05-14
申请号：US18052597
申请日：2022-11-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin A Kim , Yuho Won , Sung Woo Kim , Tae Hyung Kim , Jeong Hee Lee , Eun Joo Jang
IPC: C30B29/40 , C01G9/08 , C09K11/02 , C09K11/56 , C09K11/88 , C30B29/48 , H01L33/06 , H01L33/28 , H10K50/115 , B82Y20/00 , B82Y40/00
CPC classification number: C30B29/48 , C01G9/08 , C09K11/02 , C09K11/565 , C09K11/883 , H01L33/06 , H01L33/28 , H10K50/115 , B82Y20/00 , B82Y40/00 , C01P2002/85 , C01P2004/04 , C01P2004/64
Abstract: A semiconductor nanocrystal particle, a production method thereof, and a light emitting device including the same. The semiconductor nanocrystal particle includes a core including a first semiconductor nanocrystal, a first shell surrounding the core, the first shell including a second semiconductor nanocrystal including a different composition from the first semiconductor nanocrystal, a second shell surrounding the first shell, the second shell including a third semiconductor nanocrystal including a different composition from the second semiconductor nanocrystal, wherein the first semiconductor nanocrystal includes zinc and sulfur; wherein the third semiconductor nanocrystal includes zinc and sulfur; wherein an energy bandgap of the second semiconductor nanocrystal is less than an energy bandgap of the first semiconductor nanocrystal and less than an energy bandgap of the third semiconductor nanocrystal; and wherein the semiconductor nanocrystal particle does not include cadmium.
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公开(公告)号：US11746289B2
公开(公告)日：2023-09-05
申请号：US17407260
申请日：2021-08-20
Inventor： Yong Wook Kim , Yong Ju Kwon , Sungjee Kim , Jihyun Min , Yuho Won , Eun Joo Jang , Hyo Sook Jang , Eunjae Lee , Kyuhyun Bang , Anastasia Agnes , Jeongmin Kim
CPC classification number: C09K11/72 , C01B25/087 , C09K11/0883 , C09K11/70 , B82Y20/00 , B82Y40/00 , C01P2002/54 , C01P2002/72 , C01P2004/04 , C01P2004/50 , C01P2004/64
Abstract: The invention relates to InP-based nanoclusters that include indium and phosphorus and further include zinc, chlorine, or a combination thereof, and to a method of preparing the InP-based nanoparticles including heating the InP-based nanoclusters in the presence of zinc, chlorine, or a combination thereof.
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