公开(公告)号：US11961559B2

公开(公告)日：2024-04-16

申请号：US17830677

申请日：2022-06-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yunjung Lee ,  Hee-Woong Kang

IPC: G11C16/04 ,  G11C5/06 ,  G11C16/08 ,  G11C16/26 ,  G11C29/42

CPC classification number: G11C16/0433 ,  G11C5/063 ,  G11C16/08 ,  G11C16/26 ,  G11C29/42

Abstract: A storage device includes a nonvolatile memory device and a memory controller allowing the nonvolatile memory device to perform a read operation on memory cells belonging to a selected page in a selected memory block. After the read operation, the memory controller allows the nonvolatile memory device to perform a first check read operation on memory cells of a first neighbor page while sequentially selecting sets of read voltages. After the first check read operation, the memory controller allows the nonvolatile memory device to perform a second check read operation on memory cells of a second neighbor page while sequentially selecting the sets of read voltages. In the second check read operation, the memory controller first selects a set of read voltages, which are used in the first check read operation in which error correction succeeds.

公开(公告)号：US20210166764A1

公开(公告)日：2021-06-03

申请号：US17036060

申请日：2020-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinwoo Hong ,  Chanha Kim ,  Kangho Roh ,  Seungkyung Ro ,  Yunjung Lee ,  Heewon Lee

IPC: G11C16/10 ,  G11C16/04 ,  G06N20/00 ,  G06F3/06

Abstract: A storage device and an operating method thereof are provided. The storage device includes a non-volatile memory and a memory controller. The non-volatile memory includes memory blocks each including a word lines. The memory controller determines a word line strength of each of the word lines, adjusts a state count of each of the word lines based on the word line strengths, and adjust a program parameter of each of the word lines to decrease a program time variation between the word lines.

公开(公告)号：US11004517B2

公开(公告)日：2021-05-11

申请号：US16356182

申请日：2019-03-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yunjung Lee ,  Chanha Kim ,  Suk-eun Kang ,  Seungkyung Ro ,  Kwangwoo Lee ,  Juwon Lee ,  Jinwook Lee ,  Heewon Lee

IPC: G11C16/04 ,  G11C16/26 ,  G11C16/34 ,  G06F3/06 ,  G06F11/10 ,  G11C29/52 ,  G11C11/56

Abstract: A storage device includes a nonvolatile memory device including a memory block and a memory controller. The memory block includes a first memory region connected with a first word line and a second memory region connected with a second word line. The memory controller sets a read block voltage based on a first read voltage of the first memory region. The memory controller determines a second read voltage of the second memory region based on variation information and the read block voltage.

公开(公告)号：US20200058359A1

公开(公告)日：2020-02-20

申请号：US16356182

申请日：2019-03-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yunjung Lee ,  Chanha Kim ,  Suk-eun Kang ,  Seungkyung Ro ,  Kwangwoo Lee ,  Juwon Lee ,  Jinwook Lee ,  Heewon Lee

IPC: G11C16/26 ,  G11C16/34 ,  G06F3/06 ,  G06F11/10 ,  G11C29/52

Abstract: A storage device includes a nonvolatile memory device including a memory block and a memory controller. The memory block includes a first memory region connected with a first word line and a second memory region connected with a second word line. The memory controller sets a read block voltage based on a first read voltage of the first memory region. The memory controller determines a second read voltage of the second memory region based on variation information and the read block voltage.