公开(公告)号：US10741590B2

公开(公告)日：2020-08-11

申请号：US16087811

申请日：2017-04-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masataka Sato ,  Masakatsu Ohno ,  Seiji Yasumoto ,  Hiroki Adachi

IPC: H01L21/00 ,  H01L27/12 ,  B23K26/351 ,  H01L51/00 ,  H01L51/56 ,  H01L21/77

Abstract: A peeling method at low cost with high mass productivity is provided. A silicon layer having a function of releasing hydrogen by irradiation with light is formed over a formation substrate, a first layer is formed using a photosensitive material over the silicon layer, an opening is formed in a portion of the first layer that overlaps with the silicon layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the silicon layer, the silicon layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.

公开(公告)号：US10388875B2

公开(公告)日：2019-08-20

申请号：US15728575

申请日：2017-10-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji Yasumoto ,  Masataka Sato ,  Masafumi Nomura ,  Toshiyuki Miyamoto

IPC: H01L27/12 ,  H01L51/00

Abstract: A method for manufacturing a flexible semiconductor device is disclosed. The method includes: forming a separation layer of a metal over a substrate; treating the separation layer with plasma under an atmosphere containing nitrogen, oxygen, silicon, and hydrogen; forming a layer over the plasma-treated separation layer, the layer being capable of supplying hydrogen and nitrogen to the separation layer; forming a functional layer over the separation layer; performing heat treatment to promote the release of hydrogen and nitrogen from the layer; and separating the substrate at the separation layer. The method allows the formation of an extremely thin oxide layer over the separation layer, which facilitates the separation, reduces the probability that the oxide layer remains under the layer, and contributes to the increase in efficiency of a device included in the functional layer.

公开(公告)号：US10211239B2

公开(公告)日：2019-02-19

申请号：US15666758

申请日：2017-08-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Seiji Yasumoto ,  Yuka Kobayashi ,  Satoru Idojiri

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/47 ,  H01L21/683 ,  H01L29/66 ,  H01L29/786 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/32 ,  G02F1/136

Abstract: To increase the yield of the separation process. To produce display devices formed through the separation process with higher mass productivity. A first layer is formed using a material including a resin or a resin precursor over a substrate. Then, first heat treatment is performed on the first layer, whereby a first resin layer including a residue of an oxydiphthalic acid is formed. Then, a layer to be separated is formed over the first resin layer. Then, the layer to be separated and the substrate are separated from each other. The first heat treatment is performed in an atmosphere containing oxygen.

公开(公告)号：US10205007B2

公开(公告)日：2019-02-12

申请号：US15486545

申请日：2017-04-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junpei Yanaka ,  Seiji Yasumoto ,  Masakatsu Ohno ,  Hiroki Adachi

IPC: H01L21/00 ,  H01L29/66 ,  H01L21/02 ,  H01L21/311

Abstract: A low-cost separation method with high mass productivity is provided. A first layer with a thickness of 0.1 μm or more and 3 μm or less can be formed by using a photosensitive and thermosetting material over the formation substrate, a resin layer comprising an opening is formed by forming an opening in the first layer by using a photolithography method, a silicon layer or an oxide layer is formed so as to overlap with the opening of the resin layer, a transistor including a metal oxide is formed over the resin layer, a conductive layer formed in the same manufacturing steps as the source or drain of the transistor is formed over the silicon layer or the oxide layer, the resin layer and one of the silicon layer and the oxide layer are irradiated with the laser light, and the transistor and the conductive layer are separated from the formation substrate.

公开(公告)号：US10181424B2

公开(公告)日：2019-01-15

申请号：US15477528

申请日：2017-04-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masataka Sato ,  Masakatsu Ohno ,  Seiji Yasumoto ,  Hiroki Adachi

IPC: H01L21/00 ,  H01L21/78 ,  H01L21/02 ,  H01L21/47 ,  H01L21/84 ,  H01L21/683 ,  H01L27/12 ,  H01L29/786 ,  H01L27/32 ,  H01L51/00

Abstract: A peeling method at low cost with high mass productivity is provided. An oxide layer is formed over a formation substrate, a first layer is formed over the oxide layer using a photosensitive material, an opening is formed in a portion of the first layer that overlaps with the oxide layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the oxide layer, the oxide layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.

公开(公告)号：US09799829B2

公开(公告)日：2017-10-24

申请号：US14801331

申请日：2015-07-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji Yasumoto ,  Masataka Sato ,  Masafumi Nomura ,  Toshiyuki Miyamoto

IPC: H01L51/00

CPC classification number: H01L51/003 ,  H01L2251/5338

Abstract: A method for manufacturing a flexible semiconductor device is disclosed. The method includes: forming a separation layer of a metal over a substrate; treating the separation layer with plasma under an atmosphere containing nitrogen, oxygen, silicon, and hydrogen; forming a layer over the plasma-treated separation layer, the layer being capable of supplying hydrogen and nitrogen to the separation layer; forming a functional layer over the separation layer; performing heat treatment to promote the release of hydrogen and nitrogen from the layer; and separating the substrate at the separation layer. The method allows the formation of an extremely thin oxide layer over the separation layer, which facilitates the separation, reduces the probability that the oxide layer remains under the layer, and contributes to the increase in efficiency of a device included in the functional layer.

公开(公告)号：US11355382B2

公开(公告)日：2022-06-07

申请号：US16850185

申请日：2020-04-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji Yasumoto ,  Masataka Sato ,  Shingo Eguchi ,  Kunihiko Suzuki

IPC: H01L21/683 ,  H01L21/67 ,  H01L51/00 ,  H01L29/786 ,  B32B38/10 ,  H01L51/50

Abstract: To improve peelability, yield in a peeling step, and yield in manufacturing a flexible device. A peeling method is employed which includes a first step of forming a peeling layer containing tungsten over a support substrate; a second step of forming, over the peeling layer, a layer to be peeled formed of a stack including a first layer containing silicon oxynitride and a second layer containing silicon nitride in this order and forming an oxide layer containing tungsten oxide between the peeling layer and the layer to be peeled; a third step of forming a compound containing tungsten and nitrogen in the oxide layer by heat treatment; and a fourth step of peeling the peeling layer from the layer to be peeled at the oxide layer.

公开(公告)号：US11232944B2

公开(公告)日：2022-01-25

申请号：US16769433

申请日：2018-12-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masataka Sato ,  Kayo Kumakura ,  Seiji Yasumoto ,  Satoru Idojiri

IPC: H01L21/02 ,  H01L27/32 ,  C03C17/36 ,  C03C17/38 ,  H01L29/786 ,  H01L51/56 ,  H01L27/12 ,  H01L51/00

Abstract: A method of fabricating a semiconductor device, which includes a separation step and has a high yield, is provided. A metal layer is formed over a substrate, fluorine is supplied to the metal layer, and the metal layer is then oxidized, whereby a metal compound layer is formed. A functional layer is formed over the metal compound layer, heat treatment is performed on the metal compound layer, and the functional layer is separated from the substrate with use of the metal compound layer. By performing first plasma treatment using a gas containing fluorine, fluorine can be supplied to the metal layer. By performing second plasma treatment using a gas containing oxygen, the metal layer supplied with fluorine can be oxidized.

公开(公告)号：US20220013754A1

公开(公告)日：2022-01-13

申请号：US17479329

申请日：2021-09-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji Yasumoto ,  Kayo KUMAKURA ,  Yuka SATO ,  Satoru IDOJIRI ,  Hiroki ADACHI ,  Kenichi OKAZAKI

IPC: H01L51/56 ,  H01L51/00 ,  H01L51/52

Abstract: A high-yield fabricating method of a semiconductor device including a peeling step is provided.
A peeling method includes a step of stacking and forming a first material layer and a second material layer over a substrate and a step of separating the first material layer and the second material layer from each other. The second material layer is formed over the substrate with the first material layer therebetween. The first material layer includes a first compound layer in contact with the second material layer and a second compound layer positioned closer to the substrate side than the first compound layer is. The first compound layer has the highest oxygen content among the layers included in the first material layer. The second compound layer has the highest nitrogen content among the layers included in the first material layer. The second material layer includes a resin. In the step of separating, the first material layer and the second material layer are separated from each other by irradiation of an interface between the first material layer and the second material layer or the vicinity of the interface with light.

公开(公告)号：US11054687B2

公开(公告)日：2021-07-06

申请号：US16319649

申请日：2017-05-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masakatsu Ohno ,  Seiji Yasumoto ,  Naoto Goto ,  Hiroki Adachi

IPC: G02F1/136 ,  G02F1/1333 ,  G02F1/1362 ,  G02F1/1368

Abstract: A method for manufacturing a display device with low power consumption is provided.
A method for manufacturing a display device includes a step of forming a first layer over a substrate by using a material containing a resin or a resin precursor, a step of forming a first region and a second region thinner than the first region in the first layer, a step of forming a first resin layer including a first region and a second region thinner than the first region by performing first heat treatment on the first layer in a gas containing oxygen, a step of forming, over the first resin layer, a layer to be separated including a display element, and a step of separating the layer to be separated and the substrate from each other. A step of forming a conductive layer over the first resin layer in a position overlapping with the second region is included in the step of forming the layer to be separated. A step of exposing the conductive layer by removing the first resin layer is included after the step of separating the layer to be separated and the substrate from each other.