Method for manufacturing SOI substrate and semiconductor device
    11.
    发明授权
    Method for manufacturing SOI substrate and semiconductor device 有权
    制造SOI衬底和半导体器件的方法

    公开(公告)号:US08951878B2

    公开(公告)日:2015-02-10

    申请号:US14097793

    申请日:2013-12-05

    CPC classification number: H01L21/84 H01L21/26506 H01L21/76254

    Abstract: It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible substrate such as a glass substrate or a plastic substrate is used. Further, it is another object of the present invention to provide a method for manufacturing a thin semiconductor device using such an SOI substrate with high yield. When a single-crystal semiconductor substrate is bonded to a flexible substrate having an insulating surface and the single-crystal semiconductor substrate is separated to manufacture an SOI substrate, one or both of bonding surfaces are activated, and then the flexible substrate having an insulating surface and the single-crystal semiconductor substrate are attached to each other.

    Abstract translation: 本发明的目的是提供一种制造具有SOI层的SOI衬底的方法,该SOI衬底即使在使用诸如玻璃衬底或塑料衬底的柔性衬底时,也可以在实际应用中以高产率使用。 此外,本发明的另一个目的是提供一种以高产率制造使用这种SOI衬底的薄半导体器件的方法。 当将单晶半导体衬底接合到具有绝缘表面的柔性衬底并且分离单晶半导体衬底以制造SOI衬底时,一个或两个键合表面被激活,然后柔性衬底具有绝缘表面 并且单晶半导体衬底彼此附接。

    Transistor and electronic device
    13.
    发明授权

    公开(公告)号:US12159941B2

    公开(公告)日:2024-12-03

    申请号:US17770588

    申请日:2020-10-26

    Abstract: A semiconductor device with a small variation in transistor characteristics is provided. An oxide semiconductor film, a source electrode and a drain electrode over the oxide semiconductor film, an interlayer insulating film placed to cover the oxide semiconductor film, the source electrode, and the drain electrode, and a gate electrode over the oxide semiconductor film are included; an opening is formed overlapping with a region between the source electrode and the drain electrode in the interlayer insulating film; the gate electrode is placed in the opening in the interlayer insulating film; and the source electrode and the drain electrode include a conductive film having compressive stress.

    Light-emitting device, electronic device, and lighting device

    公开(公告)号:US10276826B2

    公开(公告)日:2019-04-30

    申请号:US15861899

    申请日:2018-01-04

    Abstract: A lightweight flexible light-emitting device that is less likely to be broken is provided. The light-emitting device includes a first flexible substrate, a second flexible substrate, an element layer, a first bonding layer, and a second bonding layer. The element layer includes a light-emitting element. The element layer is provided between the first flexible substrate and the second flexible substrate. The first bonding layer is provided between the first flexible substrate and the element layer. The second bonding layer is provided between the second flexible substrate and the element layer. The first and second bonding layers are in contact with each other on the outer side of an end portion of the element layer. The first and second flexible substrates are in contact with each other on the outer side of the end portions of the element layer, the first bonding layer, and the second bonding layer.

    Method for manufacturing display device and method for manufacturing electronic device

    公开(公告)号:US10243012B2

    公开(公告)日:2019-03-26

    申请号:US15798459

    申请日:2017-10-31

    Abstract: A method for manufacturing a display device, which does not easily damage an electrode, is provided. In the first step, a terminal electrode, a wiring, and a functional layer are provided over a first substrate; the terminal electrode, the wiring, and the functional layer are electrically connected to one another; an insulating layer is provided over the terminal electrode; a first layer is provided over the terminal electrode and the insulating layer; an adhesive layer is sandwiched between the first substrate and a second substrate; the second substrate and the adhesive layer include a first opening overlapping with part of the first layer; and the insulating layer includes a second opening inside the first opening in a top view. In the second step, part of the first layer is removed by emitting particles having a high sublimation property to the first layer, so that the terminal electrode is exposed.

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