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    Electrically erasable programmable logic device
    14.
    发明授权
    Electrically erasable programmable logic device 失效
    电可擦除可编程逻辑器件

    公开(公告)号：US06617637B1

    公开(公告)日：2003-09-09

    申请号：US10065718

    申请日：2002-11-13

    申请人： Ching-Hsiang Hsu ,  Yen-Tai Lin ,  Chih-Hsun Chu ,  Shih-Jye Shen ,  Ching-Sung Yang ,  Ming-Chou Ho

    发明人： Ching-Hsiang Hsu ,  Yen-Tai Lin ,  Chih-Hsun Chu ,  Shih-Jye Shen ,  Ching-Sung Yang ,  Ming-Chou Ho

    IPC分类号： H01L2976

    CPC分类号： H01L27/115 ,  G11C2216/10 ,  H01L29/42324 ,  H01L29/7885

    摘要： An electrically erasable programmable logic device (EEPLD) includes a P type semiconductor substrate. An N type well is formed on the P type semiconductor substrate. A first PMOS transistor is formed on the N well. The first PMOS transistor comprises a floating gate, a first P+ doped region serving as a drain of the first PMOS transistor, and a P− doped region encompassing an N+ doped region for erasing the first PMOS transistor. A second PMOS transistor is also formed on the N well and serially connected to the first PMOS transistor. The first P+ doped region functions as a source of the second PMOS transistor, and the second PMOS transistor further comprises a select gate and a second P+ doped region serving as a drain of the second PMOS transistor.

    摘要翻译： 电可擦除可编程逻辑器件（EEPLD）包括P型半导体衬底。 在P型半导体衬底上形成N型阱。 在N阱上形成第一PMOS晶体管。 第一PMOS晶体管包括浮置栅极，用作第一PMOS晶体管的漏极的第一P +掺杂区域和包围用于擦除第一PMOS晶体管的N +掺杂区域的P-掺杂区域。 第二PMOS晶体管也形成在N阱上并串联连接到第一PMOS晶体管。 第一P +掺杂区域用作第二PMOS晶体管的源极，并且第二PMOS晶体管还包括用作第二PMOS晶体管的漏极的选择栅极和第二P +掺杂区域。

    Semiconductor memory device having improved data retention
    15.
    发明授权
    Semiconductor memory device having improved data retention 有权
    具有改进的数据保持的半导体存储器件

    公开(公告)号：US06914825B2

    公开(公告)日：2005-07-05

    申请号：US10249366

    申请日：2003-04-03

    申请人： Ching-Hsiang Hsu ,  Shih-Jye Shen ,  Ming-Chou Ho

    发明人： Ching-Hsiang Hsu ,  Shih-Jye Shen ,  Ming-Chou Ho

    IPC分类号： G11C16/04 ,  H01L21/8247 ,  H01L27/115

    CPC分类号： H01L27/11521 ,  G11C16/0408 ,  G11C2216/10 ,  H01L27/115 ,  H01L27/11558

    摘要： A NVM device encompasses a MOS select transistor including a select gate electrically connected to a word line, a first source doping region electrically connected to a source line, and a first drain doping region. A MOS floating gate transistor is serially electrically connected to the MOS select transistor. The MOS floating gate transistor comprises a floating gate, a second source doping region electrically connected to the first drain doping region of the MOS select transistor, and a second drain doping region electrically connected to a bit line. The second source doping region and the second drain doping region define a floating gate channel. When the MOS floating gate transistor is programmed via a hot electron injection (HEI) mode, the floating gate is a P+ doped floating gate; when the MOS floating gate transistor is programmed via a hot hole injection (HHI) mode, the floating gate is an N+ doped floating gate.

    摘要翻译： NVM器件包括MOS选择晶体管，其包括电连接到字线的选择栅极，电连接到源极线的第一源极掺杂区域和第一漏极掺杂区域。 MOS浮栅晶体管与MOS选择晶体管串联电连接。 MOS浮栅晶体管包括浮置栅极，电连接到MOS选择晶体管的第一漏极掺杂区域的第二源极掺杂区域和电连接到位线的第二漏极掺杂区域。 第二源极掺杂区域和第二漏极掺杂区域限定浮动栅极沟道。 当通过热电子注入（HEI）模式对MOS浮栅晶体管进行编程时，浮栅是P + 当通过热空穴注入（HHI）模式来编程MOS浮栅晶体管时，浮置栅极是掺杂N +的浮栅。

    Method for operating N-channel electrically erasable programmable logic device
    16.
    发明授权
    Method for operating N-channel electrically erasable programmable logic device 有权
    用于操作N沟道电可擦除可编程逻辑器件的方法

    公开(公告)号：US06842374B2

    公开(公告)日：2005-01-11

    申请号：US10248283

    申请日：2003-01-06

    申请人： Kung-Hong Lee ,  Ching-Hsiang Hsu ,  Ya-Chin King ,  Shih-Jye Shen ,  Ming-Chou Ho

    发明人： Kung-Hong Lee ,  Ching-Hsiang Hsu ,  Ya-Chin King ,  Shih-Jye Shen ,  Ming-Chou Ho

    IPC分类号： G11C16/04 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788

    CPC分类号： H01L27/11521 ,  G11C16/0433 ,  G11C2216/10 ,  H01L27/115 ,  H01L27/11558 ,  H01L29/7885

    摘要： An electrically erasable programmable logic device (EEPLD) contains a P-type substrate. A first N-type doped region is disposed in the P-type substrate. A first gate, which is used to store data, overlies the P-type substrate and is adjacent to the first N-type doped region. A second N-type doped region is laterally disposed in the P-type substrate. The second N-type doped region is also adjacent to the first gate. A second gate, which acts as a select gate or select gate of the EEPLD, overlies the P-type substrate and is adjacent to the second N-type doped region. A third N-type doped region is disposed in the P-type substrate. The third N-type doped region is adjacent to the second gate. By Applying a sufficient voltage on the first N-type doped region (VBL), and changing a select gate voltage (VSG) or the third N-type doped region voltage (VSL) applied on the second gate of the EEPLD, the operation of the EEPLD can be selectively implemented either under a channel hot hole (CHH) program mode or a channel hot electron (CHE) erase mode.

    摘要翻译： 电可擦除可编程逻辑器件（EEPLD）包含P型衬底。 第一N型掺杂区域设置在P型衬底中。 用于存储数据的第一栅极覆盖P型衬底并与第一N型掺杂区域相邻。 第二N型掺杂区域横向设置在P型衬底中。 第二N型掺杂区域也与第一栅极相邻。 作为EEPLD的选择栅极或选择栅极的第二栅极覆盖P型衬底并与第二N型掺杂区域相邻。 在P型衬底中设置第三N型掺杂区域。 第三N型掺杂区域与第二栅极相邻。 通过在第一N型掺杂区域（VBL）上施加足够的电压，并且改变施加在EEPLD的第二栅极上的选择栅极电压（VSG）或第三N型掺杂区域电压（VSL），操作 可以在通道热孔（CHH）编程模式或通道热电子（CHE）擦除模式）下选择性地实施EEPLD。

    Integrated circuit embedded with single-poly non-volatile memory
    17.
    发明授权
    Integrated circuit embedded with single-poly non-volatile memory 有权
    集成电路嵌入单聚合非易失性存储器

    公开(公告)号：US06920067B2

    公开(公告)日：2005-07-19

    申请号：US10248193

    申请日：2002-12-25

    申请人： Ching-Hsiang Hsu ,  Chih-Hsun Chu ,  Ming-Chou Ho ,  Shih-Jye Shen

    发明人： Ching-Hsiang Hsu ,  Chih-Hsun Chu ,  Ming-Chou Ho ,  Shih-Jye Shen

    IPC分类号： H01L21/8247 ,  G11C16/04 ,  H01L27/115 ,  H01L27/118 ,  H01L29/788 ,  H01L29/792

    CPC分类号： G11C16/0408 ,  G11C2216/10 ,  H01L27/115 ,  H01L27/118

    摘要： A system on chip (SOC) contains a core circuit and an input/output (I/O) circuit embedded with an array of single-poly erasable programmable read only memory cells, each of which comprises a first PMOS transistor serially connected to a second PMOS transistor. The first and second PMOS transistors are both formed on an N-well of a P-type substrate. The first PMOS transistor includes a single-poly floating gate, a first P+ doped drain region and a first P+ doped source region, the second PMOS transistor includes a single-poly select gate and a second P+ doped source region, and the first P+ doped source region of the first PMOS transistor serves as a drain of the second PMOS transistor.

    摘要翻译： 芯片上系统（SOC）包含一个内核电路和一个嵌入单个多可擦除可编程只读存储器单元的阵列的输入/输出（I / O）电路，每个存储单元包括串联连接到第二个 PMOS晶体管。 第一和第二PMOS晶体管都形成在P型衬底的N阱上。 第一PMOS晶体管包括单多晶硅浮置栅极，第一P + SUP掺杂漏极区域和第一P + +掺杂源极区域，第二PMOS晶体管包括： 多选择栅极和第二P + +掺杂源极区域，并且第一PMOS晶体管的第一P + +掺杂源极区域用作第二PMOS晶体管的漏极。

    Fabrication method for non-volatile memory
    18.
    发明授权
    Fabrication method for non-volatile memory 有权
    非易失性存储器的制作方法

    公开(公告)号：US06812083B2

    公开(公告)日：2004-11-02

    申请号：US10463610

    申请日：2003-06-18

    申请人： Shih-Jye Shen ,  Wei-Zhe Wong ,  Ming-Chou Ho ,  Hsin-Ming Chen

    发明人： Shih-Jye Shen ,  Wei-Zhe Wong ,  Ming-Chou Ho ,  Hsin-Ming Chen

    IPC分类号： H01L21336

    CPC分类号： H01L27/115 ,  G11C16/0408 ,  G11C16/0416 ,  G11C16/0433 ,  G11C2216/10

    摘要： A fabrication method for a non-volatile memory includes providing a first metal oxide semiconductor (MOS) transistor having a control gate and a second MOS transistor having a source, a drain, and a floating gate. The first MOS transistor and the second MOS transistor are formed on a well. The method further includes biasing the first MOS with a first biasing voltage to actuate the first MOS transistor, biasing the second MOS transistor with a second biasing voltage to enable the second MOS transistor to generate a gate current, and adjusting capacitances between the floating gate of the second MOS transistor and the drain, the source, the control gate, and the well according to voltage difference between the floating gate of the second MOS transistor and the source of the second MOS transistor.

    摘要翻译： 用于非易失性存储器的制造方法包括提供具有控制栅极的第一金属氧化物半导体（MOS）晶体管和具有源极，漏极和浮置栅极的第二MOS晶体管。 第一MOS晶体管和第二MOS晶体管形成在阱上。 该方法还包括以第一偏置电压偏置第一MOS以致动第一MOS晶体管，以第二偏置电压偏置第二MOS晶体管，以使第二MOS晶体管产生栅极电流，并调整第二MOS晶体管的浮置栅极之间的电容 第二MOS晶体管和漏极，源极，控制栅极和阱，根据第二MOS晶体管的浮置栅极和第二MOS晶体管的源极之间的电压差。

    Method for operating one-time programmable read-only memory
    19.
    发明授权
    Method for operating one-time programmable read-only memory 有权
    一次性可编程只读存储器的操作方法

    公开(公告)号：US08089798B2

    公开(公告)日：2012-01-03

    申请号：US12627244

    申请日：2009-11-30

    申请人： Tsung-Mu Lai ,  Shao-Chang Huang ,  Wen-hao Ching ,  Chun-Hung Lu ,  Shih-Chen Wang ,  Ming-Chou Ho

    发明人： Tsung-Mu Lai ,  Shao-Chang Huang ,  Wen-hao Ching ,  Chun-Hung Lu ,  Shih-Chen Wang ,  Ming-Chou Ho

    IPC分类号： G11C17/00

    CPC分类号： H01L27/112 ,  G11C17/16 ,  G11C17/18 ,  H01L27/11206

    摘要： A method for operating a one-time programmable read-only memory (OTP-ROM) is provided. The OTP-ROM comprises a first gate and a second gate respectively disposed on a gate dielectric layer between a first doped region and a second doped region on a substrate, wherein the first gate is adjacent to the first doped region and coupled to the first doped region, the second gate is adjacent to the second doped region, the first gate is electrically coupled grounded, and the OTP-ROM is programmed through a breakdown effect. The method comprises a step of programming the OTP-ROM under the conditions that a voltage of the second doped region is higher than a voltage of the first doped region, the voltage of the second gate is higher than a threshold voltage to pass the voltage of the second doped region, and the first doped region and the substrate are at a reference voltage.

    摘要翻译： 提供了一种用于操作一次性可编程只读存储器（OTP-ROM）的方法。 OTP-ROM包括分别设置在衬底上的第一掺杂区域和第二掺杂区域之间的栅极电介质层上的第一栅极和第二栅极，其中第一栅极与第一掺杂区域相邻并耦合到第一掺杂区域 所述第二栅极与所述第二掺杂区相邻，所述第一栅极电耦合接地，并且通过击穿效应对所述OTP-ROM进行编程。 该方法包括在第二掺杂区域的电压高于第一掺杂区域的电压的条件下对OTP-ROM进行编程的步骤，第二栅极的电压高于阈值电压以通过 第二掺杂区域和第一掺杂区域和衬底处于参考电压。

    METHOD FOR OPERATING ONE-TIME PROGRAMMABLE READ-ONLY MEMORY
    20.
    发明申请
    METHOD FOR OPERATING ONE-TIME PROGRAMMABLE READ-ONLY MEMORY 有权
    一次性可编程只读存储器的操作方法

    公开(公告)号：US20100073985A1

    公开(公告)日：2010-03-25

    申请号：US12627244

    申请日：2009-11-30

    申请人： Tsung-Mu Lai ,  Shao-Chang Huang ,  Wen-hao Ching ,  Chun-Hung Lu ,  Shih-Chen Wang ,  Ming-Chou Ho

    发明人： Tsung-Mu Lai ,  Shao-Chang Huang ,  Wen-hao Ching ,  Chun-Hung Lu ,  Shih-Chen Wang ,  Ming-Chou Ho

    IPC分类号： G11C17/08

    CPC分类号： H01L27/112 ,  G11C17/16 ,  G11C17/18 ,  H01L27/11206

    摘要： A method for operating a one-time programmable read-only memory (OTP-ROM) is provided. The OTP-ROM comprises a first gate and a second gate respectively disposed on a gate dielectric layer between a first doped region and a second doped region on a substrate, wherein the first gate is adjacent to the first doped region and coupled to the first doped region, the second gate is adjacent to the second doped region, the first gate is electrically coupled grounded, and the OTP-ROM is programmed through a breakdown effect. The method comprises a step of programming the OTP-ROM under the conditions that a voltage of the second doped region is higher than a voltage of the first doped region, the voltage of the second gate is higher than a threshold voltage to pass the voltage of the second doped region, and the first doped region and the substrate are at a reference voltage.

    摘要翻译： 提供了一种用于操作一次性可编程只读存储器（OTP-ROM）的方法。 OTP-ROM包括分别设置在衬底上的第一掺杂区域和第二掺杂区域之间的栅极电介质层上的第一栅极和第二栅极，其中第一栅极与第一掺杂区域相邻并耦合到第一掺杂区域 所述第二栅极与所述第二掺杂区相邻，所述第一栅极电耦合接地，并且通过击穿效应对所述OTP-ROM进行编程。 该方法包括在第二掺杂区域的电压高于第一掺杂区域的电压的条件下对OTP-ROM进行编程的步骤，第二栅极的电压高于阈值电压以通过 第二掺杂区域和第一掺杂区域和衬底处于参考电压。