Abstract:
A rolling bearing composed of a combination of bearing wings formed with a steel material and rolling elements formed with a ceramic material, wherein the residual austenite amount of the steel material forming the rolling rings is controlled to a specific value. By the construction, at rolling of the rolling elements formed with a relatively hard ceramic material, the occurrence of the surface scratches of the rolling elements can be restrained, which results in restraining the vibrations and noises caused from the rolling bearing.
Abstract:
A non-magnetic base film is provided thereon with a magnetic layer having ferromagnetic powders dispersed in a binder. The binder contains 30 to 70% by weight of a polyurethane resin A having a glass transition temperature Tg conforming to 60.degree. C..ltoreq.Tg.ltoreq.80.degree. C., and 30 to 70% by weight of a polyurethane resin B having a glass transition temperature Tg conforming to 0.degree. C.
Abstract:
A work following device for controlling the movement of the free portion of a work during a press working process such as a bending press working process to prevent the free portion of the work from warping due to the inertia thereof in the final stage of the press working process and for restoring the work to its initial position after the same has been pressed. The work following device having a base plate mounted with the components, a drum case fixedly disposed on the base plate and rotatably housing a drum, an electromagnet which holds to the free portion of a work during the press working process, an electromagnet holding member, a positioning block which positions the electromagnet holding member at a predetermined seating position at the start of the work following operation, an elongate spring plate having one end fixed to the drum and the other end fixed to the electromagnet holding member, and wound on the drum, a clutch connecting the drum to and disconnecting the drum from a reduction gear which is driven by a motor, and a control unit for controlling the operation of the components in accordance with a control program.
Abstract:
It is an object of the present invention to provide a coated conductive powder particularly useful as the conductive filler of an anisotropic conductive adhesive used for electrically interconnecting circuit boards, circuit parts, and the like, and a conductive adhesive that can provide connection with high electrical reliability even for the connection of the electrodes of miniaturized electronic parts, such as IC chips, and circuit boards. The coated conductive powder of the present invention is a coated conductive powder obtained by coating the surfaces of conductive particles with an insulating substance, wherein the insulating substance is a powdery, thermally latent curing agent. Also, in the present invention, the particle surfaces of the coated conductive powder are further coated with insulating inorganic fine particles.
Abstract:
There is disclosed a method capable of resetting a fault tolerant computer in complete synchronization among modules. The method includes a step of generating a reset requesting signal by one of the modules, a step of dividing the reset requesting signal to first and second reset requesting signals, a step of transmitting the second reset requesting signal to the other module, a step of delaying the first reset requesting signal in the one module by a time required for transmitting the second reset requesting signal to the other module, a step of resetting at least one CPU included in the one module by a first CPU reset signal generated based on the first reset requesting signal delayed in the one module, and a step of resetting at least one CPU included in the other module by a second CPU reset signal generated based on the second reset requesting signal transmitted to the other module.
Abstract:
A semiconductor light-emitting device comprises: a semiconductor substrate; a semiconductor layer structure on the semiconductor substrate, including an active layer and a waveguide ridge; an electrode in contact with all of a top surface of the waveguide ridge; and an insulating film coating side faces of the waveguide ridge, side faces of the electrode, and ends, but not a center portion, of an upper face of the electrode.
Abstract:
A multi-wavelength semiconductor laser device includes a plate stem; a prism shaped submount with a bottom face on a face of the stem; laser diodes having emission wavelengths different from each other are mounted on lateral sides of the submount so that their respective emission points are positioned at substantially the same distance from a center axis of the stem; and lead pins penetrating the stem are located along and opposite edge lines between adjacent pairs of the lateral sides of the submount.
Abstract:
A semiconductor light-emitting device comprises: a semiconductor substrate; a semiconductor layer structure on the semiconductor substrate, including an active layer and a waveguide ridge; an electrode in contact with all of a top surface of the waveguide ridge; and an insulating film coating side faces of the waveguide ridge, side faces of the electrode, and ends, but not a center portion, of an upper face of the electrode.
Abstract:
A method for manufacturing a nitride semiconductor device, comprises epitaxially growing a semiconductor layer of a GaN-based material on the Ga surface of a GaN substrate while the GaN substrate is mounted on a substrate holder the substrate warping during the epitaxial growth so that a epitaxial deposit is deposited on the N surface of the substrate; and subjecting the N surface of the GaN substrate to vacuum suction after the epitaxial growth of the semiconductor layer; removing the epitaxial deposit from the N side of the GaN substrate after the semiconductor layer has been epitaxially grown, and before the N surface of the n-type GaN substrate is subjected to vacuum suction.
Abstract:
Semiconductor devices, in particular nitride semiconductor devices for use in the manufacture of laser diodes, prevent peeling-off of the electrode, and at the same time reduces the complexity of processes and a reduction in yield. A nitride semiconductor device according to the invention includes a P-type nitride semiconductor layer with a ridge on its surface, an SiO2 film covering at least the side face of the ridge, an adherence layer formed on a surface of the SiO2 film and composed mainly of silicon, and a P-type electrode formed on the upper surface of the ridge and on a surface of the adherence layer.