公开(公告)号：US08653908B2

公开(公告)日：2014-02-18

申请号：US12921150

申请日：2008-03-04

申请人： Motoaki Hara ,  Tokihiro Nishihara ,  Shinji Taniguchi ,  Takeshi Sakashita ,  Tsuyoshi Yokoyama ,  Masafumi Iwaki ,  Masanori Ueda

发明人： Motoaki Hara ,  Tokihiro Nishihara ,  Shinji Taniguchi ,  Takeshi Sakashita ,  Tsuyoshi Yokoyama ,  Masafumi Iwaki ,  Masanori Ueda

IPC分类号： H03H9/54

CPC分类号： H03H9/174 ,  H03H3/02 ,  H03H9/02118 ,  H03H9/173 ,  H03H2003/021 ,  H03H2003/023

摘要： A piezoelectric thin film resonator of the present has a substrate 1, an intermediate layer 7 disposed on the substrate 1 and is formed of an insulator, a lower electrode 3 disposed on the intermediate layer 7, a piezoelectric film 4 disposed on the lower electrode 3, and an upper electrode 5 disposed on a position facing the lower electrode 3 with the piezoelectric film 4 interposed therebetween, in which, in a resonant region 8 where the lower electrode 3 and the upper electrode 5 face each other, a space 6 is formed in the substrate 1 and the intermediate layer 7 or between the lower electrode 3 and the intermediate layer 7 and the region of the space 6 is included in the resonant region 8. With the structure, the dissipation of the vibrational energy to the substrate from the resonance portion can be suppressed, thereby improving the quality factor.

摘要翻译： 本发明的压电薄膜谐振器具有基板1，设置在基板1上并由绝缘体形成的中间层7，设置在中间层7上的下部电极3，设置在下部电极3上的压电膜4 以及设置在面向下电极3的位置上的上电极5，其间插入压电膜4，其中在下电极3和上电极5彼此面对的谐振区域8中形成有空间6 在基板1和中间层7中，或在下部电极3和中间层7之间，并且空间6的区域包含在谐振区域8中。通过这种结构，振动能量从基板 可以抑制共振部分，从而提高质量因素。

公开(公告)号：US08240015B2

公开(公告)日：2012-08-14

申请号：US12627412

申请日：2009-11-30

申请人： Takeshi Sakashita ,  Motoaki Hara ,  Masafumi Iwaki ,  Tsuyoshi Yokoyama ,  Shinji Taniguchi ,  Tokihiro Nishihara ,  Masanori Ueda

发明人： Takeshi Sakashita ,  Motoaki Hara ,  Masafumi Iwaki ,  Tsuyoshi Yokoyama ,  Shinji Taniguchi ,  Tokihiro Nishihara ,  Masanori Ueda

IPC分类号： H04R17/10 ,  H01L41/22 ,  B05D5/12

CPC分类号： H03H9/174 ,  H03H3/02 ,  H03H9/02118 ,  H03H9/132 ,  H03H9/173 ,  H03H9/605 ,  H03H9/706 ,  Y10T29/42 ,  Y10T29/49155 ,  Y10T29/49156

摘要： A method of producing a piezoelectric thin film resonator is provided. A sacrificial layer is formed on a part of the piezoelectric film. The sacrificial layer is patterned, and thereafter an upper electrode is formed on the piezoelectric layer. The method further includes removing the sacrificial layer formed on the piezoelectric layer; and patterning the piezoelectric film. In the step of removing the sacrificial layer, the sacrificial layer is removed such that at least a portion of the periphery of the upper electrode has a reversely tapered shape that reflects the tapered portion of the sacrificial layer, and in the step of patterning the piezoelectric film, the piezoelectric film is removed such that a lower end of the reversely tapered periphery of the upper electrode is placed so as to coincide with or to be in the vicinity of an end portion of the patterned piezoelectric film.

摘要翻译： 提供了一种制造压电薄膜谐振器的方法。 在压电膜的一部分上形成牺牲层。 将牺牲层图案化，然后在压电层上形成上电极。 该方法还包括去除形成在压电层上的牺牲层; 并构图压电膜。 在去除牺牲层的步骤中，去除牺牲层，使得上电极的周边的至少一部分具有反映牺牲层的锥形部分的倒锥形形状，并且在图案化压电 膜，去除压电膜，使得上电极的倒锥形周边的下端被放置成与图案化压电膜的端部一致或靠近。

公开(公告)号：US08125297B2

公开(公告)日：2012-02-28

申请号：US12512794

申请日：2009-07-30

申请人： Masafumi Iwaki ,  Tokihiro Nishihara ,  Shinji Taniguchi ,  Takeshi Sakashita ,  Tsuyoshi Yokoyama ,  Motoaki Hara ,  Masanori Ueda

发明人： Masafumi Iwaki ,  Tokihiro Nishihara ,  Shinji Taniguchi ,  Takeshi Sakashita ,  Tsuyoshi Yokoyama ,  Motoaki Hara ,  Masanori Ueda

IPC分类号： H03H9/70 ,  H03H9/54 ,  H03H9/64 ,  H03H9/72

CPC分类号： H03H9/725 ,  H03H7/18 ,  H03H9/706

摘要： A filter includes: a first filter unit includes: a series resonators connected in series to each other between a first input terminal and a first output terminal; a parallel resonators each having one end connected to one terminal of each of the series resonators; and a common inductance having one end connected to the other ends of the parallel resonators and the other end connected to a ground terminal, and a second filter unit includes: a series resonators connected in series to each other between a second input terminal and a second output terminal; a parallel resonators each having one end connected to one terminal of each of the series resonators; and a common inductance having one end connected to the other ends of the parallel resonators and the other end connected to the ground terminal.

摘要翻译： 滤波器包括：第一滤波器单元，包括：在第一输入端和第一输出端之间彼此串联连接的串联谐振器; 每个并联谐振器的一端连接到每个串联谐振器的一个端子; 以及公共电感，其一端连接到并联谐振器的另一端并且另一端连接到接地端子，并且第二滤波器单元包括：在第二输入端子和第二输入端子之间彼此串联连接的串联谐振器 输出端子 每个并联谐振器的一端连接到每个串联谐振器的一个端子; 以及公共电感，其一端连接到并联谐振器的另一端，另一端连接到接地端子。

公开(公告)号：US20100110940A1

公开(公告)日：2010-05-06

申请号：US12684481

申请日：2010-01-08

申请人： Motoaki HARA ,  Tokihiro Nishihara ,  Shinji Taniguchi ,  Takeshi Sakashita ,  Tsuyoshi Yokoyama ,  Masafumi Iwaki ,  Masanori Ueda

发明人： Motoaki HARA ,  Tokihiro Nishihara ,  Shinji Taniguchi ,  Takeshi Sakashita ,  Tsuyoshi Yokoyama ,  Masafumi Iwaki ,  Masanori Ueda

IPC分类号： H04B7/00 ,  H03H9/205

CPC分类号： H03H9/725 ,  H03H9/0571 ,  H03H9/706

摘要： An acoustic wave filter having excellent steepness is provided without adding any exterior components or any new manufacturing steps. A plurality of filters (10-1) each having a first resonator (2a-1) placed in a serial arm and having a resonance frequency frs and an anti-resonance frequency fas, and a second resonator (4a-1) placed in a parallel arm and having a resonator frp and an anti-resonance frequency fap are provided on a same substrate, where the resonance frequency frs of the first resonator is higher than the resonance frequency frp of the second resonator; the anti-resonance frequency fas of the first resonator is higher than the anti-resonance frequency fap of the second resonator; and the filters (10-1) are connected in multiple stages. At least one of the filters (10-1) connected in multiple stages has a third resonator (6-1) having a resonance frequency frp and an anti-resonance frequency fap. The third resonator (6-1) is formed on the substrate and connected to the serial arm in parallel with respect to the first resonator (2a-1).

摘要翻译： 提供了具有优异陡度的声波滤波器，而不增加任何外部部件或任何新的制造步骤。 多个滤波器（10-1），每个滤波器（10-1）具有放置在串联臂中的第一谐振器（2a-1），并具有谐振频率frs和反共振频率fas，以及放置在 平行臂并具有谐振器frp和反共振频率fap设​​置在同一衬底上，其中第一谐振器的谐振频率frs高于第二谐振器的谐振频率frp; 第一谐振器的反共振频率fas高于第二谐振器的反共振频率fap; 并且过滤器（10-1）分成多个阶段连接。 多级连接的滤波器（10-1）中的至少一个具有谐振频率frp和反共振频率fap的第三谐振器（6-1）。 第三谐振器（6-1）形成在基板上并相对于第一谐振器（2a-1）并联连接到串联臂。

公开(公告)号：US20100019866A1

公开(公告)日：2010-01-28

申请号：US12503583

申请日：2009-07-15

申请人： Motoaki HARA ,  Tokihiro Nishihara ,  Shinji Taniguchi ,  Takeshi Sakashita ,  Tsuyoshi Yokoyama ,  Masafumi Iwaki ,  Masanori Ueda

发明人： Motoaki HARA ,  Tokihiro Nishihara ,  Shinji Taniguchi ,  Takeshi Sakashita ,  Tsuyoshi Yokoyama ,  Masafumi Iwaki ,  Masanori Ueda

IPC分类号： H03H9/58 ,  H01L41/22 ,  H01L41/04 ,  H01L41/047

CPC分类号： H03H9/205 ,  H03H3/02 ,  H03H9/173 ,  H03H9/568 ,  H03H9/587 ,  H03H9/605 ,  H03H2003/021 ,  Y10T29/42 ,  Y10T29/49005

摘要： An acoustic wave device includes a substrate and a plurality of piezoelectric thin film resonators formed over the substrate. Each of the plurality of the piezoelectric thin film resonators includes lower electrode provided on the substrate, a piezoelectric film provided on the lower electrode, and an upper electrode provided on the piezoelectric film and opposed to the lower electrode through the piezoelectric film. Each of the piezoelectric thin film resonators is partly supported by the substrate and extends above the substrate to form a cavity between the substrate and each lower electrodes. The cavity continuously extending under the plurality of the piezoelectric thin film resonators.

摘要翻译： 声波器件包括衬底和形成在衬底上的多个压电薄膜谐振器。 多个压电薄膜谐振器中的每一个包括设置在基板上的下电极，设置在下电极上的压电薄膜和设置在压电薄膜上并通过压电薄膜与下电极相对的上电极。 每个压电薄膜谐振器由衬底部分地支撑并且在衬底上方延伸以在衬底和每个下电极之间形成空腔。 该腔体在多个压电薄膜谐振器下连续延伸。

公开(公告)号：US07545077B2

公开(公告)日：2009-06-09

申请号：US11806129

申请日：2007-05-30

申请人： Shinji Taniguchi ,  Tsuyoshi Yokoyama ,  Motoaki Hara ,  Takeshi Sakashita ,  Jun Tsutsumi ,  Masafumi Iwaki ,  Tokihiro Nishihara ,  Masanori Ueda ,  Hisanori Ehara

发明人： Shinji Taniguchi ,  Tsuyoshi Yokoyama ,  Motoaki Hara ,  Takeshi Sakashita ,  Jun Tsutsumi ,  Masafumi Iwaki ,  Tokihiro Nishihara ,  Masanori Ueda ,  Hisanori Ehara

IPC分类号： H03H9/00 ,  H01L41/08

CPC分类号： H03H9/605 ,  H03H3/02 ,  H03H9/02118 ,  H03H9/02141 ,  H03H9/132 ,  H03H9/173 ,  H03H9/174 ,  H03H2003/021

摘要： A filter includes multiple piezoelectric thin-film resonators each having a substrate, a lower electrode formed on the substrate, a piezoelectric film formed on the lower electrode, and an upper electrode provided on the piezoelectric film so that the upper electrode and the lower electrode face each other across the piezoelectric film. The multiple piezoelectric thin-film resonators include a first resonator in which at least a part of an outer curved portion of the piezoelectric film of the first resonator is located further out than an outer curved portion of a region in which the upper electrode and the lower electrode face each other across the piezoelectric film. The multiple piezoelectric thin-film resonators includes a second resonator in which at least a part of an outer curved portion of the piezoelectric film of the second resonator substantially coincides with an outer curved portion of a region in which the upper electrode and the lower electrode face each other across the piezoelectric film or is further in than the outer curved portion of the region.

摘要翻译： 滤波器包括多个压电薄膜谐振器，每个压电薄膜谐振器均具有基板，形成在基板上的下电极，形成在下电极上的压电薄膜和设置在压电薄膜上的上电极，使得上电极和下电极面 彼此横跨压电薄膜。 多个压电薄膜谐振器包括：第一谐振器，其中第一谐振器的压电膜的外弯曲部分的至少一部分位于比上电极和下电极的区域的外弯曲部分更远的位置 电极彼此面对压电薄膜。 多个压电薄膜谐振器包括第二谐振器，其中第二谐振器的压电膜的外部弯曲部分的至少一部分基本上与上电极和下电极面的区域的外弯曲部分重合 彼此隔着压电膜，或者比该区域的外部弯曲部分进一步。

公开(公告)号：US20070096597A1

公开(公告)日：2007-05-03

申请号：US11586731

申请日：2006-10-26

申请人： Shinji Taniguchi ,  Tsuyoshi Yokoyama ,  Motoaki Hara ,  Takeshi Sakashita ,  Jun Tsutsumi ,  Masafumi Iwaki ,  Tokihiro Nishihara ,  Masanori Ueda

发明人： Shinji Taniguchi ,  Tsuyoshi Yokoyama ,  Motoaki Hara ,  Takeshi Sakashita ,  Jun Tsutsumi ,  Masafumi Iwaki ,  Tokihiro Nishihara ,  Masanori Ueda

IPC分类号： H01L41/08

CPC分类号： H03H9/132 ,  H03H3/02 ,  H03H9/02133 ,  H03H9/173 ,  H03H9/568 ,  H03H2003/021

摘要： A piezoelectric thin-film resonator includes a lower electrode formed on a substrate to define a rounded dome-shaped cavity between the lower electrode and the substrate, a piezoelectric film provided on the lower electrode, and an upper electrode provided on the piezoelectric film. A membrane region is an overlapping region of the lower electrode and the upper electrode interposing the piezoelectric film and a projected area of the cavity onto the substrate includes the membrane region.

摘要翻译： 压电薄膜谐振器包括形成在基板上的下电极，以在下电极和基板之间限定圆顶形空腔，设置在下电极上的压电薄膜和设置在压电薄膜上的上电极。 膜区域是下电极的重叠区域，并且插入压电膜的上电极，并且空腔的投影面积包括膜区域。

公开(公告)号：US08125298B2

公开(公告)日：2012-02-28

申请号：US12684481

申请日：2010-01-08

申请人： Motoaki Hara ,  Tokihiro Nishihara ,  Shinji Taniguchi ,  Takeshi Sakashita ,  Tsuyoshi Yokoyama ,  Masafumi Iwaki ,  Masanori Ueda

发明人： Motoaki Hara ,  Tokihiro Nishihara ,  Shinji Taniguchi ,  Takeshi Sakashita ,  Tsuyoshi Yokoyama ,  Masafumi Iwaki ,  Masanori Ueda

IPC分类号： H03H9/70 ,  H03H9/72 ,  H03H9/54 ,  H03H9/64

CPC分类号： H03H9/725 ,  H03H9/0571 ,  H03H9/706

摘要： An acoustic wave filter having excellent steepness is provided without adding any exterior components or any new manufacturing steps. A plurality of filters (10-1) each having a first resonator (2a-1) placed in a serial arm and having a resonance frequency frs and an anti-resonance frequency fas, and a second resonator (4a-1) placed in a parallel arm and having a resonance frequency frp and an anti-resonance frequency fap are provided on a same substrate, where the resonance frequency frs of the first resonator is higher than the resonance frequency frp of the second resonator; the anti-resonance frequency fas of the first resonator is higher than the anti-resonance frequency fap of the second resonator; and the filters (10-1) are connected in multiple stages. At least one of the filters (10-1) connected in multiple stages has a third resonator (6-1) having a resonance frequency frp and an anti-resonance frequency fap. The third resonator (6-1) is formed on the substrate and connected to the serial arm in parallel with respect to the first resonator (2a-1).

摘要翻译： 提供了具有优异陡度的声波滤波器，而不增加任何外部部件或任何新的制造步骤。 多个滤波器（10-1），每个滤波器（10-1）具有放置在串联臂中的第一谐振器（2a-1），并具有谐振频率frs和反共振频率fas，以及放置在 平行臂并具有共振频率frp和反共振频率fap设​​置在同一基板上，其中第一谐振器的谐振频率frs高于第二谐振器的谐振频率frp; 第一谐振器的反共振频率fas高于第二谐振器的反共振频率fap; 并且过滤器（10-1）分成多个阶段连接。 多级连接的滤波器（10-1）中的至少一个具有谐振频率frp和反共振频率fap的第三谐振器（6-1）。 第三谐振器（6-1）形成在基板上并相对于第一谐振器（2a-1）并联连接到串联臂。

公开(公告)号：US08084919B2

公开(公告)日：2011-12-27

申请号：US12535186

申请日：2009-08-04

申请人： Tokihiro Nishihara ,  Motoaki Hara ,  Shinji Taniguchi ,  Takeshi Sakashita ,  Tsuyoshi Yokoyama ,  Masafumi Iwaki ,  Masanori Ueda

发明人： Tokihiro Nishihara ,  Motoaki Hara ,  Shinji Taniguchi ,  Takeshi Sakashita ,  Tsuyoshi Yokoyama ,  Masafumi Iwaki ,  Masanori Ueda

IPC分类号： H01L41/09

CPC分类号： H03H9/174 ,  H03H9/02118 ,  H03H9/13 ,  H03H9/132 ,  H03H9/568 ,  H03H2003/0435

摘要： A piezoelectric thin film resonator includes a substrate, a lower electrode formed on the substrate, a piezoelectric film formed on the lower electrode, and an upper electrode formed on the piezoelectric film, the lower electrode and the upper electrode opposing each other through the piezoelectric film to form an opposing region, the opposing region including a space at a boundary of the opposing region. The space extends from an innerside to an outer side of the opposing region and is formed in or on the piezoelectric film.

摘要翻译： 压电薄膜谐振器包括基板，形成在基板上的下电极，形成在下电极上的压电薄膜，以及形成在压电薄膜上的上电极，通过压电薄膜相对的下电极和上电极 以形成相对区域，相对区域包括在相对区域的边界处的空间。 该空间从内侧延伸到相对区域的外侧，并且形成在压电膜中或上。

公开(公告)号：US20110241800A1

公开(公告)日：2011-10-06

申请号：US13127215

申请日：2008-11-28

申请人： Tsuyoshi Yokoyama ,  Shinji Taniguchi ,  Masafumi Iwaki ,  Motoaki Hara ,  Takeshi Sakashita ,  Tokihiro Nishihara ,  Masanori Ueda

发明人： Tsuyoshi Yokoyama ,  Shinji Taniguchi ,  Masafumi Iwaki ,  Motoaki Hara ,  Takeshi Sakashita ,  Tokihiro Nishihara ,  Masanori Ueda

IPC分类号： H03H9/205 ,  H03H3/04

CPC分类号： H03H9/173 ,  H03H3/04 ,  H03H9/564 ,  H03H9/568 ,  H03H2003/0414 ,  H03H2003/0428 ,  Y10T29/42 ,  Y10T29/49005

摘要： A method of manufacturing an elastic wave device is provided with a lamination step of forming, on a substrate (1), a plurality of elastic wave devices, each of which includes a lower electrode (2), a piezoelectric film (3), and an upper electrode (4); a measuring step for measuring the operation frequency distribution of the elastic wave devices on the substrate (1); and an adjusting step for forming an adjusting region, in which the thickness of the elastic wave device is different from the thicknesses of other portions in a resonance portion of each elastic wave device, corresponding with the distribution of the operation frequencies. The adjusting region is formed so that the size of the area of the adjusting region of the resonator portion of each elastic wave device is different in accordance with the operation frequency distribution that is measured. Thus, the frequency characteristics of the elastic wave devices are easily adjusted by a small number of steps.

摘要翻译： 一种制造弹性波装置的方法具有层压步骤，在基板（1）上形成多个弹性波装置，每个弹性波装置包括下电极（2），压电薄膜（3）和 上电极（4）; 用于测量衬底（1）上的弹性波器件的操作频率分布的测量步骤; 以及用于形成调整区域的调整步骤，其中弹性波器件的厚度与每个弹性波器件的谐振部分中的其它部分的厚度不同，与对应于操作频率的分布相对应。 调整区域被形成为使得每个弹性波装置的谐振器部分的调整区域的面积的大小根据所测量的操作频率分布而不同。 因此，弹性波器件的频率特性可以通过少量的步骤容易地调节。