公开(公告)号：US5013688A

公开(公告)日：1991-05-07

申请号：US385155

申请日：1989-07-26

申请人： Shunepi Yamazaki ,  Kazuo Urata ,  Itaru Koyama ,  Noriya Ishida ,  Mari Sasaki ,  Shinji Imatou ,  Kazuhisa Nakashita ,  Naoki Hirose

发明人： Shunepi Yamazaki ,  Kazuo Urata ,  Itaru Koyama ,  Noriya Ishida ,  Mari Sasaki ,  Shinji Imatou ,  Kazuhisa Nakashita ,  Naoki Hirose

IPC分类号： H01L21/316 ,  H01L21/56 ,  H01L23/31 ,  H01L23/495

CPC分类号： H01L24/48 ,  H01L21/56 ,  H01L23/3135 ,  H01L23/49586 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/8592 ,  H01L24/45 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  Y10T29/49121

摘要： An improved electric device and manufacturing method for the same are described. The device is, for example, an IC chip clothed with moulding. In advance of the moulding process, the IC chip is coated with silicon nitride in order to protect the IC chip from moisture invaded through cracks or gaps. The coating of silicon nitride is carried out after cleaning the surface of the IC chip by plasma CVD.

摘要翻译： 描述了一种改进的电气装置及其制造方法。 该装置例如是具有成型的IC芯片。 在模制过程之前，IC芯片被涂覆有氮化硅，以保护IC芯片免受通过裂纹或间隙侵入的水分。 在通过等离子体CVD清洁IC芯片的表面之后进行氮化硅涂层。

公开(公告)号：US5035753A

公开(公告)日：1991-07-30

申请号：US453310

申请日：1989-12-22

申请人： Kunio Suzuki ,  Masayoshi Abe ,  Mikio Kinka ,  Yasuyuki Arai ,  Akemi Satake ,  Kazuo Nishi ,  Shuichi Kugawa ,  Noriya Ishida

发明人： Kunio Suzuki ,  Masayoshi Abe ,  Mikio Kinka ,  Yasuyuki Arai ,  Akemi Satake ,  Kazuo Nishi ,  Shuichi Kugawa ,  Noriya Ishida

IPC分类号： H01L31/04 ,  H01L27/142 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/076 ,  H01L31/046 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A solar cell comprises a plurality of series connected photoelectric conversion structures formed on a substrate. The conversion structure consists of a first semiconductor film on a P-type, an intrinsic semiconductor film formed on the first semiconductor film such that one end thereof extends beyond an end of the first semiconductor film and a second semiconductor film of a second, opposite conductivity type formed on the intrinsic semiconductor film such that one end thereof extends beyond the extended end of the intrinsic semiconductor film and makes direct electrical contact with an end of the first semiconductor film of the adjacent structure.

摘要翻译： 太阳能电池包括形成在基板上的多个串联连接的光电转换结构。 转换结构由P型的第一半导体膜，形成在第一半导体膜上的本征半导体膜，使得其一端延伸超过第一半导体膜的端部，第二半导体膜的第二相反电导率 形成在本征半导体膜上，使得其一端延伸超过本征半导体膜的延伸端并与相邻结构的第一半导体膜的端部直接电接触。

公开(公告)号：US5462821A

公开(公告)日：1995-10-31

申请号：US340725

申请日：1994-11-16

申请人： Takashi Onoue ,  Kiyoshi Araki ,  Noriya Ishida ,  Toshiya Kitamura ,  Yasuhiko Niitsu ,  Makiko Yanagisawa ,  Ryo Sakamoto ,  Fumihiro Sato

发明人： Takashi Onoue ,  Kiyoshi Araki ,  Noriya Ishida ,  Toshiya Kitamura ,  Yasuhiko Niitsu ,  Makiko Yanagisawa ,  Ryo Sakamoto ,  Fumihiro Sato

IPC分类号： H01M4/02 ,  H01M4/38 ,  H01M4/48 ,  H01M6/04 ,  H01M6/10 ,  H01M10/24 ,  H01M10/26 ,  H01M12/06 ,  H01M4/58 ,  G01N27/26

CPC分类号： H01M10/24 ,  H01M10/26 ,  H01M12/06 ,  H01M4/38 ,  H01M6/04 ,  H01M2004/027 ,  H01M2300/0014 ,  H01M4/48 ,  H01M6/10

摘要： A novel primary or secondary battery whose active material for the negative electrode is composed of metallic gallium, gallium alloys or gallium oxide has first come into the world.Gallium has an electrochemical equivalent of 23.24, which is smaller than those of zinc (32.70) and cadmium (56.21). This indicates that when used as an active material for the negative electrode in batteries, gallium has larger capacity per unit mass than zinc and cadmium by respective factors of ca. 1.4 and 2.4. The potential of the reaction; Ga+6OH.sup.- =GaO.sub.3.sup.3- +3H.sub.2 O+3e.sup.- is obviously less noble than the voltage of hydrogen evolution and this means that a high-potential battery can be made. Due to the high hydrogen overvoltage of gallium, gallium ions in the solution can be precipitated as metallic gallium by electrodeposition. As a further advantage, no dendrite formation occurs during the electrodeposition unlike in the case of zinc. The high hydrogen overvoltage also contributes to the production of a battery that undergoes only limited self-discharge. What is more, gallium which has no toxicity presents few environmental problems.

摘要翻译： 一种新型的一次或二次电池，其负极活性物质由金属镓，镓合金或氧化镓组成，已经进入世界。 镓的电化学当量为23.24，小于锌（32.70）和镉（56.21）的电化学当量。 这表明，当用作电池中的负极的活性材料时，镓的每单位质量的量比锌和镉的相应因素大。 1.4和2.4。 反应的潜力; Ga + 6OH- = GaO33- + 3H2O + 3e-明显低于氢析出电压的高度，这意味着可以制造高电位电池。 由于镓的高氢过电压，溶液中的镓离子可以通过电沉积作为金属镓沉淀。 作为另外的优点，在电沉积期间不发生枝晶形成，这与锌的情况不同。 高氢过电压也有助于生产仅经受有限自放电的电池。 而且，没有毒性的镓会带来很少的环境问题。

公开(公告)号：US4987005A

公开(公告)日：1991-01-22

申请号：US396795

申请日：1989-08-21

申请人： Kunio Suzuki ,  Takeshi Fukada ,  Mikio Kinka ,  Masayoshi Abe ,  Katsuhiko Shibata ,  Masato Susukida ,  Noriya Ishida ,  Akemi Satake ,  Yasuyuki Arai

发明人： Kunio Suzuki ,  Takeshi Fukada ,  Mikio Kinka ,  Masayoshi Abe ,  Katsuhiko Shibata ,  Masato Susukida ,  Noriya Ishida ,  Akemi Satake ,  Yasuyuki Arai

IPC分类号： H01L31/04 ,  C23C16/24 ,  C23C16/50 ,  C23C16/509 ,  C23C16/54 ,  H01J37/32 ,  H01L21/205

CPC分类号： H01J37/32431 ,  C23C16/509 ,  C23C16/54

摘要： An improved method for manufacturing uniform films or etching uniformly on a plurality of substrates is shown. The substrates are vertically placed in a reaction chamber so as to be treated at once. A chemical vapor reaction takes place by virtue of a high frequency electric power which is modulated in its amplitude. By this modulation, the deposition or etching can be carried out over the surface of a susbtrate.

摘要翻译： 示出了在多个基板上均匀地制造或均匀蚀刻的改进方法。 将基板垂直放置在反应室中，以便立即进行处理。 化学气相反应是通过以其振幅调制的高频电力进行的。 通过这种调制，沉积或蚀刻可以在悬臂梁的表面上进行。