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公开(公告)号：US4987004A
公开(公告)日：1991-01-22
申请号：US522129
申请日：1990-05-11
申请人： Shunpei Yamazaki , Mitsunori Tsuchiya , Atsushi Kawano , Shinji Imatou , Kazuhisa Nakashita , Toshiji Hamatani , Takashi Inushima , Kenji Itou
发明人： Shunpei Yamazaki , Mitsunori Tsuchiya , Atsushi Kawano , Shinji Imatou , Kazuhisa Nakashita , Toshiji Hamatani , Takashi Inushima , Kenji Itou
IPC分类号： C23C16/517 , H01J37/32 , H01J37/34
CPC分类号： H01J37/32082 , C23C16/517 , H01J37/32165 , H01J37/32568 , H01J37/34 , H01J2237/3321
摘要： A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electric power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.
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公开(公告)号：US20070141859A1
公开(公告)日：2007-06-21
申请号：US11705793
申请日：2007-02-14
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , B23K26/04 , H01L21/02532 , H01L21/2026 , H01L21/268 , H01L21/8221 , H01L21/84 , H01L27/1285 , Y10S117/904 , Y10S148/09
摘要： A laser processing process which comprises laser annealing a silicon film 2 μm or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more. A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said devices to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.
摘要翻译： 一种激光加工方法，其特征在于，通过照射波长400nm以下的激光束，以脉冲宽度为50ns以上，优选为100nsec的脉冲模式，激光退火2μm以下的硅膜， 更多。 一种激光加工装置，包括激光产生装置和用于在其上安装与所述装置分开设置的样品的台，从而防止归因于舞台的运动的振动传递到激光产生装置和光学系统。 可以获得稳定的激光束，从而提高生产率。
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公开(公告)号：US06638800B1
公开(公告)日：2003-10-28
申请号：US09409899
申请日：1999-10-01
IPC分类号： H01L2100
CPC分类号： H01L21/02686 , B23K26/04 , H01L21/02532 , H01L21/2026 , H01L21/268 , H01L21/8221 , H01L21/84 , H01L27/1285 , Y10S117/904 , Y10S148/09
摘要： A laser processing process which comprises laser annealing a silicon film 2 &mgr;m or less in thickness by irradiating at laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more. A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said devices to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.
摘要翻译： 一种激光加工工艺，其包括通过在波长400nm或更小的激光束照射波长激光退火2μm或更小的硅膜，并以脉冲宽度为50nsec以上，优选为100nsec的脉冲模式操作， 一种激光加工装置，包括激光产生装置和用于在其上安装与所述装置分开设置的样品的载台，从而防止归因于载物台移动的振动传递到激光产生装置和光学系统。 可以获得稳定的激光束，从而提高生产率。
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公开(公告)号：US5891764A
公开(公告)日：1999-04-06
申请号：US739192
申请日：1996-10-30
CPC分类号： B23K26/04 , H01L21/2026 , H01L21/268 , H01L21/8221 , H01L21/84 , H01L27/1285 , Y10S117/904 , Y10S148/09
摘要： A laser processing process which comprises laser annealing a silicon film 2 .mu.m or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more.A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said device, to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.
摘要翻译： 一种激光加工方法，其特征在于，激光退火厚度在2μm以下的硅膜，通过照射波长400nm以下的激光束，脉冲宽度为50nsec以上，优选为100nsec 或者更多。 一种激光加工装置，包括激光产生装置和用于在其上安装与所述装置分开设置的样品的载台，从而防止归因于载物台移动的振动传递到激光产生装置和光学系统。 可以获得稳定的激光束，从而提高生产率。
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公开(公告)号：US5643801A
公开(公告)日：1997-07-01
申请号：US511466
申请日：1995-08-04
IPC分类号： B23K26/04 , H01L21/20 , H01L21/77 , H01L21/822 , H01L21/84 , B23K26/02 , H01L21/268
CPC分类号： B23K26/04 , H01L21/2026 , H01L21/268 , H01L21/8221 , H01L21/84 , H01L27/1285 , Y10S117/904 , Y10S148/09
摘要： A laser processing process which includes laser annealing a silicon film 2 .mu.m or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more and preferably, 100 nsec or more. The invention further relates to a laser processing apparatus which includes a laser generation device and a stage for mounting thereon a sample provide separately from said device, to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.
摘要翻译： 一种激光加工方法，其包括通过照射波长为400nm以下的激光束并以脉冲宽度为50ns以上，优选为100nsec的脉冲模式来激光退火2μm以下的硅膜， 更多。 本发明还涉及一种激光加工装置，其包括激光产生装置和用于在其上安装样品的载物台，与所述装置分开提供，从而防止归因于载物台移动的振动传递到激光产生装置和光学 系统。 可以获得稳定的激光束，从而提高生产率。
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公开(公告)号：US5283087A
公开(公告)日：1994-02-01
申请号：US863543
申请日：1992-04-06
申请人： Shunpei Yamazaki , Mitsunori Tsuchiya , Atsushi Kawano , Shinji Imatou , Kazuhisa Nakashita , Toshiji Hamatani , Takashi Inushima , Kenji Itou
发明人： Shunpei Yamazaki , Mitsunori Tsuchiya , Atsushi Kawano , Shinji Imatou , Kazuhisa Nakashita , Toshiji Hamatani , Takashi Inushima , Kenji Itou
CPC分类号： H01J37/32082 , C23C16/517 , H01J37/32165 , H01J37/32568 , H01J37/34 , H01J2237/3321
摘要： A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electric power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.
摘要翻译： 对等离子体处理及其装置进行说明。 多个基板设置在一对电极之间，施加高频电力以产生辉光放电并诱导等离子体。 等离子体中的衬底被施加交变电场。 由于交变电场，基板受到溅射作用。
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公开(公告)号：US5256483A
公开(公告)日：1993-10-26
申请号：US606185
申请日：1990-10-31
申请人： Shunpei Yamazaki , Mitsunori Tsuchiya , Atsushi Kawano , Shinji Imatou , Kazuhisa Nakashita , Toshiji Hamatani , Takashi Inushima , Kenji Itou
发明人： Shunpei Yamazaki , Mitsunori Tsuchiya , Atsushi Kawano , Shinji Imatou , Kazuhisa Nakashita , Toshiji Hamatani , Takashi Inushima , Kenji Itou
IPC分类号： C23C16/517 , H01J37/32 , H01J37/34 , B32B9/00
CPC分类号： H01J37/32082 , C23C16/517 , H01J37/32165 , H01J37/32568 , H01J37/34 , H01J2237/3321 , Y10S428/906 , Y10T428/30
摘要： A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electric power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.
摘要翻译： 对等离子体处理及其装置进行说明。 多个基板设置在一对电极之间，施加高频电力以产生辉光放电并诱导等离子体。 等离子体中的衬底被施加交变电场。 由于交变电场，基板受到溅射作用。
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公开(公告)号：US5079031A
公开(公告)日：1992-01-07
申请号：US324669
申请日：1989-03-17
申请人： Shunpei Yamazaki , Shinji Imatou , Noriya Ishida , Mari Sasaki , Mitsunori Sakama , Takeshi Fukada , Naoki Hirose , Mitsunori Tsuchiya , Atsushi Kawano , Kazuhisa Nakashita , Junichi Takeyama , Toshiji Hamatani
发明人： Shunpei Yamazaki , Shinji Imatou , Noriya Ishida , Mari Sasaki , Mitsunori Sakama , Takeshi Fukada , Naoki Hirose , Mitsunori Tsuchiya , Atsushi Kawano , Kazuhisa Nakashita , Junichi Takeyama , Toshiji Hamatani
IPC分类号： C23C16/517 , H01J37/32
CPC分类号： H01J37/3244 , C23C16/517 , H01J37/32082 , H01J37/32568 , H01J2237/3321
摘要： An improved apparatus and method for depositing thin films on a substrate. The apparatus utilizes two types of energy input. A pair of electrodes are provided in a reaction chamber and supplied with first AC electric energy at 1 to 100 MHz for generating a plasma gas in a reaction chamber therebetween. The substrate is mounted on a substrate holder to which second electric energy is supplied.
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公开(公告)号：US5013688A
公开(公告)日：1991-05-07
申请号：US385155
申请日：1989-07-26
申请人： Shunepi Yamazaki , Kazuo Urata , Itaru Koyama , Noriya Ishida , Mari Sasaki , Shinji Imatou , Kazuhisa Nakashita , Naoki Hirose
发明人： Shunepi Yamazaki , Kazuo Urata , Itaru Koyama , Noriya Ishida , Mari Sasaki , Shinji Imatou , Kazuhisa Nakashita , Naoki Hirose
IPC分类号： H01L21/316 , H01L21/56 , H01L23/31 , H01L23/495
CPC分类号： H01L24/48 , H01L21/56 , H01L23/3135 , H01L23/49586 , H01L2224/05624 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48624 , H01L2224/8592 , H01L24/45 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01023 , H01L2924/01033 , H01L2924/01047 , H01L2924/01072 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12044 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , Y10T29/49121
摘要： An improved electric device and manufacturing method for the same are described. The device is, for example, an IC chip clothed with moulding. In advance of the moulding process, the IC chip is coated with silicon nitride in order to protect the IC chip from moisture invaded through cracks or gaps. The coating of silicon nitride is carried out after cleaning the surface of the IC chip by plasma CVD.
摘要翻译： 描述了一种改进的电气装置及其制造方法。 该装置例如是具有成型的IC芯片。 在模制过程之前，IC芯片被涂覆有氮化硅，以保护IC芯片免受通过裂纹或间隙侵入的水分。 在通过等离子体CVD清洁IC芯片的表面之后进行氮化硅涂层。
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公开(公告)号：US4971667A
公开(公告)日：1990-11-20
申请号：US303240
申请日：1989-02-03
申请人： Shunpei Yamazaki , Mitsunori Tsuchiya , Atsushi Kawano , Shinji Imatou , Kazuhisa Nakashita , Toshiji Hamatani , Takashi Inushima , Kenji Itou
发明人： Shunpei Yamazaki , Mitsunori Tsuchiya , Atsushi Kawano , Shinji Imatou , Kazuhisa Nakashita , Toshiji Hamatani , Takashi Inushima , Kenji Itou
IPC分类号： C23C16/517 , H01J37/32 , H01J37/34
CPC分类号： H01J37/32082 , C23C16/517 , H01J37/32165 , H01J37/32568 , H01J37/34 , H01J2237/3321
摘要： A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electromagnetic power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are additionally applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.
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