公开(公告)号：US20120304140A1

公开(公告)日：2012-11-29

申请号：US13114834

申请日：2011-05-24

申请人： Shawn Boshart ,  Shahriar Moinian ,  Joshua Williams ,  Hong-ha Vuong

发明人： Shawn Boshart ,  Shahriar Moinian ,  Joshua Williams ,  Hong-ha Vuong

IPC分类号： G06F17/50

CPC分类号： G06F17/5036 ,  G06F17/5063 ,  G06F2217/66

摘要： A parameterizable design system is for use with semiconductor analog circuits and includes an interface unit connected to provide access to the system, a database unit connected to supply a library of parameterizable analog building blocks for a design entity, and a parameterization unit connected to select a parameter for one of the library of parameterizable analog building blocks to meet a design specification of the design entity. Additionally, the parameterizable design system may also include a simulation unit connected to simulate an operation of the design entity employing the parameter, and an analyzer unit connected to analyze a sensitivity of the parameter for the design entity based on the design specification. A method of designing a semiconductor analog circuit is also included.

摘要翻译： 可参数化的设计系统与半导体模拟电路一起使用，并且包括被连接以提供对系统的访问的接口单元，连接到用于为设计实体提供可参数化的模拟构建块的库的数据库单元，以及连接以选择一个 参数为可参数化的模拟构建块之一，以满足设计实体的设计规范。 此外，可参数化设计系统还可以包括连接以模拟使用参数的设计实体的操作的模拟单元，以及连接以基于设计规范分析设计实体的参数的灵敏度的分析器单元。 还包括设计半导体模拟电路的方法。

公开(公告)号：US08143696B2

公开(公告)日：2012-03-27

申请号：US12516301

申请日：2009-03-18

申请人： Weiwei Mao ,  Shahriar Moinian ,  Kenneth Wade Paist ,  William B. Wilson

发明人： Weiwei Mao ,  Shahriar Moinian ,  Kenneth Wade Paist ,  William B. Wilson

IPC分类号： H01L27/08

CPC分类号： H01L23/5227 ,  H01L2924/0002 ,  H01L2924/00

摘要： An IC inductor structure is provided which includes a first inductor element formed on a semiconductor substrate and at least a second inductor element formed on the semiconductor substrate proximate the first inductor element. The first inductor element has a first effective magnetic field direction associated therewith, and the second inductor element has a second effective magnetic field direction associated therewith. The first and second inductor elements are oriented relative to one another so as to create a non-zero angle between the first and second effective magnetic field directions.

摘要翻译： 提供一种IC电感器结构，其包括形成在半导体衬底上的第一电感器元件和形成在靠近第一电感器元件的半导体衬底上的至少第二电感器元件。 第一电感器元件具有与其相关联的第一有效磁场方向，并且第二电感器元件具有与其相关联的第二有效磁场方向。 第一和第二电感器元件相对于彼此定向，以便在第一和第二有效磁场方向之间产生非零角度。

公开(公告)号：US20110298026A1

公开(公告)日：2011-12-08

申请号：US13046973

申请日：2011-03-14

申请人： John G. Jansen ,  Chi-Yi Kao ,  Ce Chen ,  Shahriar Moinian

发明人： John G. Jansen ,  Chi-Yi Kao ,  Ce Chen ,  Shahriar Moinian

IPC分类号： H01L27/108 ,  H01L21/28

CPC分类号： H01L27/10894 ,  H01L27/10855 ,  H01L27/10882 ,  H01L27/10888 ,  H01L27/10897

摘要： An electronic device includes an active layer located over a substrate with the active layer having a logic circuit and an eDRAM cell. The electronic device also includes a first metallization level located over the active layer that provides logic interconnects and metal capacitor plates. The logic interconnects are connected to the logic circuit and the metal capacitor plates are connected to the eDRAM cell. The electronic device additionally includes a second metallization level located over the first metallization level that provides an interconnect connected to at least one of the logic interconnects, and a bit line that is connected to the eDRAM cell. A method of manufacturing an electronic device is also included.

摘要翻译： 电子器件包括位于衬底上方的有源层，有源层具有逻辑电路和eDRAM单元。 电子器件还包括位于有源层上的第一金属化级，其提供逻辑互连和金属电容器板。 逻辑互连连接到逻辑电路，金属电容器板连接到eDRAM单元。 电子设备还包括位于第一金属化级别上的第二金属化级别，其提供连接到至少一个逻辑互连的互连线以及连接到eDRAM单元的位线。 还包括制造电子装置的方法。

公开(公告)号：US07174532B2

公开(公告)日：2007-02-06

申请号：US10992031

申请日：2004-11-18

申请人： James D. Chlipala ,  Shahriar Moinian

发明人： James D. Chlipala ,  Shahriar Moinian

IPC分类号： G06F17/50

CPC分类号： G06F17/5068 ,  H01L21/76224 ,  H01L27/0207

摘要： The present invention provides a method for manufacturing a semiconductor device, comprising: determining an isolation structure stress effect of a first semiconductor device, determining an optical proximity effect of a second semiconductor device, selecting a modeling design parameter such that the isolation structure stress effect is offset against the optical proximity effect on a fabrication model, and using the selected design parameter to construct a third semiconductor device.

摘要翻译： 本发明提供一种制造半导体器件的方法，包括：确定第一半导体器件的隔离结构应力效应，确定第二半导体器件的光学邻近效应，选择建模设计参数，使得隔离结构应力效应为 抵消制造模型上的光学邻近效应，并且使用所选择的设计参数来构造第三半导体器件。

公开(公告)号：US08464202B2

公开(公告)日：2013-06-11

申请号：US13114834

申请日：2011-05-24

申请人： Shawn Boshart ,  Shahriar Moinian ,  Joshua Williams ,  Hong-Ha Vuong

发明人： Shawn Boshart ,  Shahriar Moinian ,  Joshua Williams ,  Hong-Ha Vuong

IPC分类号： G06F17/50

CPC分类号： G06F17/5036 ,  G06F17/5063 ,  G06F2217/66

摘要： A parameterizable design system is for use with semiconductor analog circuits and includes an interface unit connected to provide access to the system, a database unit connected to supply a library of parameterizable analog building blocks for a design entity, and a parameterization unit connected to select a parameter for one of the library of parameterizable analog building blocks to meet a design specification of the design entity. Additionally, the parameterizable design system may also include a simulation unit connected to simulate an operation of the design entity employing the parameter, and an analyzer unit connected to analyze a sensitivity of the parameter for the design entity based on the design specification. A method of designing a semiconductor analog circuit is also included.

摘要翻译： 可参数化的设计系统与半导体模拟电路一起使用，并且包括被连接以提供对系统的访问的接口单元，连接到用于为设计实体提供可参数化的模拟构建块的库的数据库单元，以及连接以选择一个 参数为可参数化的模拟构建块之一，以满足设计实体的设计规范。 此外，可参数化设计系统还可以包括连接以模拟使用参数的设计实体的操作的模拟单元，以及连接以基于设计规范分析设计实体的参数的灵敏度的分析器单元。 还包括设计半导体模拟电路的方法。

公开(公告)号：US07847666B2

公开(公告)日：2010-12-07

申请号：US11535501

申请日：2006-09-27

申请人： Shahriar Moinian ,  John E. Scoggins

发明人： Shahriar Moinian ,  John E. Scoggins

IPC分类号： H01F5/00

CPC分类号： H01F17/0006 ,  H01F2017/0046 ,  H01F2017/008 ,  H01F2021/125 ,  H01L23/5227 ,  H01L2924/0002 ,  H01L2924/00

摘要： An inductor device in an integrated circuit includes a first winding portion, a bridge portion and a second winding portion. The integrated circuit has a first, a second, a third and a fourth metallization level. The first winding portion comprises a first metal line formed on the first metallization level and a second metal line formed on the second metallization level, the first metal line being electrically connected in parallel with the second metal line. The bridge portion comprises a third metal line formed on the third metallization level and a fourth metal line formed on the fourth metallization level, the third metal line being electrically connected in parallel with the fourth metal line. The second winding portion comprises a fifth metal line formed on the first metallization level and a sixth metal line formed on the second metallization level, the fifth metal line being electrically connected in parallel with the sixth metal line. The bridge portion electrically connects the first winding portion to the second winding portion.

摘要翻译： 集成电路中的电感器件包括第一绕组部分，桥接部分和第二绕组部分。 集成电路具有第一，第二，第三和第四金属化层。 第一绕组部分包括形成在第一金属化层上的第一金属线和形成在第二金属化层上的第二金属线，第一金属线与第二金属线并联电连接。 桥接部分包括形成在第三金属化层上的第三金属线和形成在第四金属化层上的第四金属线，第三金属线与第四金属线并联电连接。 第二绕组部分包括形成在第一金属化层上的第五金属线和形成在第二金属化层上的第六金属线，第五金属线与第六金属线并联电连接。 桥接部分将第一绕组部分电连接到第二绕组部分。

公开(公告)号：US20100244276A1

公开(公告)日：2010-09-30

申请号：US12725169

申请日：2010-03-16

申请人： Jeffrey P. Burleson ,  Shahriar Moinian ,  John Osenbach ,  Jayanthi Pallinti

发明人： Jeffrey P. Burleson ,  Shahriar Moinian ,  John Osenbach ,  Jayanthi Pallinti

IPC分类号： H01L23/50 ,  H01L21/60

CPC分类号： H01L25/18 ,  H01L23/13 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/16 ,  H01L2224/0401 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16235 ,  H01L2224/1703 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06572 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/157 ,  H01L2924/00012 ,  H01L2924/00

摘要： An electronics package 100 comprising a substrate 105 having a planar surface 107, a memory die 110 and a logic die 120. Memory circuit components 112 interconnected to memory die contacts 114 located on an outer surface 116 of a face 118 of the memory die. Logic circuit components 122 interconnected to logic die contacts 124 located on an outer surface 126 of a face 128 of the logic die. Memory die contacts and the logic die contacts are interconnected such that the face of the memory die opposes the face of the logic die. A plurality of bonds 130 interconnect input-output contacts 132 on the planar surface of the substrate, to external die contacts 135 on one of the face of the logic die or the face of the memory die. One face opposes the planar surface, the other face is not directly connected to the interconnect input-output contacts.

摘要翻译： 包括具有平坦表面107，存储管芯110和逻辑管芯120的衬底105的电子封装100.存储器电路部件112互连到位于存储器管芯的表面118的外表面116上的存储器管芯触点114。 逻辑电路部件122互连到位于逻辑管芯的表面128的外表面126上的逻辑管接头124。 存储器管芯触点和逻辑管芯触头互连，使得存储器管芯的表面与逻辑管芯的表面相对。 多个键130将衬底的平坦表面上的输入 - 输出触点132互连到逻辑管芯的一个面上的存储器管芯的外部管芯触点135。 一个面对着平面，另一个面不直接连接到互连输入 - 输出触点。

公开(公告)号：US20070033555A1

公开(公告)日：2007-02-08

申请号：US11198930

申请日：2005-08-05

申请人： Kausar Banoo ,  Seung Kang ,  Shahriar Moinian ,  Blane Musser ,  John Pantone

发明人： Kausar Banoo ,  Seung Kang ,  Shahriar Moinian ,  Blane Musser ,  John Pantone

IPC分类号： G06F17/50

CPC分类号： G06F17/5036

摘要： Techniques are presented for reliability analysis of integrated circuits. A circuit data file including a connectivity network with appended parasitic information is obtained. Circuit performance is simulated, based on the data file, to obtain simulated currents for metallic conductive paths of the circuit. Contextual representations of the paths are determined, and reliability analysis is performed on the contextual representations. The analysis can relate, for example, to electromigration, joule-heating, and/or fusing. The results of the analysis can be provided, for example, in the form of a report including recommended changes, such as width increases, to wires for which it is determined that reliability issues exist.

摘要翻译： 介绍了集成电路可靠性分析的技术。 获得包括具有附加寄生信息的连通性网络的电路数据文件。 基于数据文件模拟电路性能，以获得电路的金属导电路径的模拟电流。 确定路径的上下文表示，并对上下文表示进行可靠性分析。 该分析可以涉及例如电迁移，焦耳加热和/或熔化。 分析结果可以例如以报告的形式提供，包括推荐的变化（例如宽度增加）到确定可靠性问题的电线。