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11.发明申请System And Method To Inhibit Erasing Of Portion Of Sector Of Split Gate Flash Memory Cells 有权抑制分裂门闪存单元部分擦除的系统和方法公开(公告)号：US20160027517A1
公开(公告)日：2016-01-28
申请号：US14486687
申请日：2014-09-15
Applicant: Silicon Storage Technology, Inc.
Inventor： Jinho Kim , Nhan Do , Yuri Tkachev , Kai Man Yue , Xiaozhou Qian , Ning Bai
IPC: G11C16/14
CPC classification number: G11C16/14 , G11C16/0425 , G11C16/12 , G11C16/16 , G11C29/021 , G11C29/028
Abstract: A system and method to inhibit the erasing of a portion of a sector of split gate flash memory cells while allowing the remainder of the sector to be erased is disclosed. The inhibiting is controlled by control logic that applies one or more bias voltages to the portion of the sector whose erasure is to be inhibited.
Abstract translation: 公开了一种抑制扇区的分割门闪存单元的一部分擦除同时允许扇区的其余部分被擦除的系统和方法。 禁止由控制逻辑控制，该控制逻辑将一个或多个偏置电压施加到要擦除擦除的扇区的该部分。
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Patent Agency Ranking
公开(公告)号：US20160019972A1
公开(公告)日：2016-01-21
申请号：US14772047
申请日：2013-03-15
Applicant: SILICON STORAGE TECHNOLOGY, INC.
Inventor： Yao Zhou , Kai Man Yue , Xiaozhou Qian , Bin Sheng
CPC classification number: G11C16/28 , G11C7/08 , G11C7/227 , G11C8/18 , G11C16/24 , G11C16/26 , G11C16/32
Abstract: A self-timer for a sense amplifier in a memory device is disclosed.
Abstract translation: 公开了一种用于存储器件中的读出放大器的自拍。
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公开(公告)号：US20180005701A1
公开(公告)日：2018-01-04
申请号：US15706586
申请日：2017-09-15
Applicant: Silicon Storage Technology, Inc.
Inventor： Xiao Yan Pi , Xiaozhou Qian , Kai Man Yue , Yao Zhou , Yaohua Zhu
IPC: G11C16/28 , G11C7/12 , G11C29/02 , G11C16/08 , G11C7/14 , G11C16/24 , G11C7/06 , G11C29/50 , G11C29/12
CPC classification number: G11C16/28 , G11C7/062 , G11C7/12 , G11C7/14 , G11C16/08 , G11C16/24 , G11C29/025 , G11C2029/1204 , G11C2029/5006
Abstract: An improved sensing circuit is disclosed that utilizes a bit line in an unused memory array to provide reference values to compare against selected cells in another memory array. A circuit that can perform a self-test for identifying bit lines with leakage currents about an acceptable threshold also is disclosed.
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公开(公告)号：US09620235B2
公开(公告)日：2017-04-11
申请号：US14772047
申请日：2013-03-15
Applicant: Silicon Storage Technology, Inc.
Inventor： Yao Zhou , Kai Man Yue , Xiaozhou Qian , Bin Sheng
CPC classification number: G11C16/28 , G11C7/08 , G11C7/227 , G11C8/18 , G11C16/24 , G11C16/26 , G11C16/32
Abstract: A self-timer for a sense amplifier in a memory device is disclosed.
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15.发明授权公开(公告)号：US09564238B1
公开(公告)日：2017-02-07
申请号：US14919005
申请日：2015-10-21
Applicant: Silicon Storage Technology, Inc.
Inventor： Ning Bai , Hieu Van Tran , Qing Rao , Parviz Ghazavi , Kai Man Yue
CPC classification number: G11C16/28 , G11C7/14 , G11C16/0425 , G11C16/08 , G11C16/14 , G11C16/30 , G11C2216/04
Abstract: The present invention relates to a flash memory device that uses dummy memory cells as source line pull down circuits. In one embodiment, when a memory cell is in read mode or erase mode, its source line is coupled to ground through a bitline of a dummy memory cell, which in turn is coupled to ground. When the memory cell is in program mode, the bitline of the dummy memory cell is coupled to an inhibit voltage, which places the dummy memory cell in a program inhibit mode that maintains the dummy memory cell in erased state.
Abstract translation: 本发明涉及使用虚拟存储单元作为源极线下拉电路的闪速存储器件。 在一个实施例中，当存储器单元处于读取模式或擦除模式时，其源极线通过虚拟存储器单元的位线耦合到地，而虚拟存储器单元进一步耦合到地。 当存储器单元处于编程模式时，虚拟存储单元的位线被耦合到禁止电压，这使得虚拟存储单元处于将虚拟存储单元维持为擦除状态的程序禁止模式。
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公开(公告)号：US09564235B2
公开(公告)日：2017-02-07
申请号：US14386814
申请日：2013-03-15
Applicant: Silicon Storage Technology, Inc.
Inventor： Yao Zhou , Xiaozhou Qian , Kai Man Yue , Guangming Lin
CPC classification number: G11C16/26 , G11C7/14 , G11C16/28 , G11C29/021 , G11C29/026 , G11C29/028
Abstract: A trimmable current reference generator for use in a sense amplifier is disclosed.
Abstract translation: 公开了一种用于读出放大器的可调整电流参考发生器。
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