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    EUV mask inspection system
    13.
    发明授权
    EUV mask inspection system 有权
    EUV面罩检测系统

    公开(公告)号：US09046754B2

    公开(公告)日：2015-06-02

    申请号：US12605627

    申请日：2009-10-26

    申请人： Harry Sewell ,  Eric Brian Catey ,  Adel Joobeur ,  Yevgeniy Konstantinovich Shmarev

    发明人： Harry Sewell ,  Eric Brian Catey ,  Adel Joobeur ,  Yevgeniy Konstantinovich Shmarev

    IPC分类号： G03B27/52 ,  G03B27/54 ,  G03B27/62 ,  G03B27/32 ,  G03F7/20 ,  G03B13/26 ,  G01N21/956

    CPC分类号： G03B27/54 ,  G01N2021/95676 ,  G03F7/70208 ,  G03F7/70275 ,  G03F7/7085 ,  G03F7/70991

    摘要： Disclosed are apparatuses, methods, and lithographic systems for EUV mask inspection. An EUV mask inspection system can include an EUV illumination source, an optical system, and an image sensor. The EUV illumination source can be a standalone illumination system or integrated into the lithographic system, where the EUV illumination source can be configured to illuminate an EUV radiation beam onto a target portion of a mask. The optical system can be configured to receive at least a portion of a reflected EUV radiation beam from the target portion of the mask. Further, the image sensor can be configured to detect an aerial image corresponding to the portion of the reflected EUV radiation beam. The EUV mask inspection system can also include a data analysis device configured to analyze the aerial image for mask defects.

    摘要翻译： 公开了用于EUV掩模检查的装置，方法和光刻系统。 EUV掩模检查系统可以包括EUV照明源，光学系统和图像传感器。 EUV照明源可以是独立的照明系统或集成到光刻系统中，其中EUV照明源可被配置为将EUV辐射束照射到掩模的目标部分上。 光学系统可以被配置为从掩模的目标部分接收反射的EUV辐射束的至少一部分。 此外，图像传感器可以被配置为检测对应于反射的EUV辐射束的该部分的空间图像。 EUV掩模检查系统还可以包括被配置为分析掩模缺陷的空中图像的数据分析装置。

    System and method for printing interference patterns having a pitch in a lithography system
    14.
    发明授权
    System and method for printing interference patterns having a pitch in a lithography system 有权
    用于在光刻系统中打印具有间距的干涉图案的系统和方法

    公开(公告)号：US08934084B2

    公开(公告)日：2015-01-13

    申请号：US11443431

    申请日：2006-05-31

    申请人： Yevgeniy Konstantinovich Shmarev

    发明人： Yevgeniy Konstantinovich Shmarev

    IPC分类号： G03B27/52 ,  G03F7/20

    CPC分类号： G03F7/70408

    摘要： An interferometric lithography system produces a pattern having a sharp field edge and minimal optical path length difference. Light passes through a beamsplitter into an input prism. The two beams produced by the beamsplitter are reflected off respective surfaces of the input prism toward a substrate prism. The substrate prism is symmetric to the input prism such that the incidence angle at an image plane is approximately equal to the beamsplitter diffraction angle. Alternatively, light passes through a beamsplitter into a prism. The two beams produced by the beamsplitter are reflected off respective surfaces of the prism toward an output surface of the prism, such that the incidence angle at the output surface is approximately equal to the beamsplitter diffraction angle. A plurality of these interferometers can be stacked, each being optimized for a given pitch, such that the stack provides a variable pitch interferometry system.

    摘要翻译： 干涉光刻系统产生具有尖锐场边缘和最小光程长度差的图案。 光通过分束器进入输入棱镜。 由分束器产生的两束光从输入棱镜的相应表面反射向基板棱镜。 基板棱镜与输入棱镜对称，使得像平面处的入射角近似等于分束器衍射角。 或者，光通过分束器进入棱镜。 由分束器产生的两束光从棱镜的相应表面反射到棱镜的输出表面，使得输出表面处的入射角近似等于分束器衍射角。 可以堆叠多个这些干涉仪，每个干涉仪针对给定的间距进行优化，使得堆叠提供可变的俯仰干涉测量系统。

    Reticle inspection systems and method
    15.
    发明授权
    Reticle inspection systems and method 有权
    标线检查系统和方法

    公开(公告)号：US08189203B2

    公开(公告)日：2012-05-29

    申请号：US12573408

    申请日：2009-10-05

    申请人： Yevgeniy Konstantinovich Shmarev ,  Eric Brian Catey ,  Robert Albert Tharaldsen ,  Richard David Jacobs

    发明人： Yevgeniy Konstantinovich Shmarev ,  Eric Brian Catey ,  Robert Albert Tharaldsen ,  Richard David Jacobs

    IPC分类号： G01B11/02

    CPC分类号： G01B9/02068 ,  G01B9/02022 ,  G01N21/95607 ,  G01N2021/95676 ,  G03F1/84 ,  G03F7/70525 ,  G03F7/70916 ,  G03F7/70975 ,  G03F7/70991

    摘要： A method and systems for reticle inspection. The method includes coherently illuminating surfaces of an inspection reticle and a reference reticle, applying a Fourier transform to scattered light from the illuminated surfaces, shifting the phase of the transformed light from the reference reticle such that a phase difference between the transformed light from the inspection reticle and the transformed light from the reference reticle is 180 degrees, combining the transformed light as an image subtraction, applying an inverse Fourier transform to the combined light, and detecting the combined light at a detector. An optical path length difference between two optical paths from the illumination source to the detector is less than a coherence length of the illumination source. The image detected by the detector represents a difference in amplitude and phase distributions of the reticles allowing foreign particles, defects, or the like, to be easily distinguished.

    摘要翻译： 一种用于标线检查的方法和系统。 该方法包括相干地照射检查光罩和参考光罩的表面，对来自被照射表面的散射光进行傅立叶变换，使来自参考掩模版的变换光的相位移动，使得来自检查的变换光之间的相位差 并且来自参考掩模版的变换光为180度，将变换后的光作为图像减法组合，对合成的光进行逆傅立叶变换，并检测检测器上的组合光。 从照明源到检测器的两条光路之间的光程长度差小于照明源的相干长度。 由检测器检测到的图像表示能够容易地区分允许异物，缺陷等的掩模版的振幅和相位分布的差异。

    EUV Mask Inspection System
    20.
    发明申请
    EUV Mask Inspection System 有权
    EUV面罩检测系统

    公开(公告)号：US20100149505A1

    公开(公告)日：2010-06-17

    申请号：US12605627

    申请日：2009-10-26

    申请人： Harry SEWELL ,  Eric Brian Catey ,  Adel Joobeur ,  Yevgeniy Konstantinovich Shmarev

    发明人： Harry SEWELL ,  Eric Brian Catey ,  Adel Joobeur ,  Yevgeniy Konstantinovich Shmarev

    IPC分类号： G03B27/54 ,  G01V8/00

    CPC分类号： G03B27/54 ,  G01N2021/95676 ,  G03F7/70208 ,  G03F7/70275 ,  G03F7/7085 ,  G03F7/70991

    摘要： Disclosed are apparatuses, methods, and lithographic systems for EUV mask inspection. An EUV mask inspection system can include an EUV illumination source, an optical system, and an image sensor. The EUV illumination source can be a standalone illumination system or integrated into the lithographic system, where the EUV illumination source can be configured to illuminate an EUV radiation beam onto a target portion of a mask. The optical system can be configured to receive at least a portion of a reflected EUV radiation beam from the target portion of the mask. Further, the image sensor can be configured to detect an aerial image corresponding to the portion of the reflected EUV radiation beam. The EUV mask inspection system can also include a data analysis device configured to analyze the aerial image for mask defects.

    摘要翻译： 公开了用于EUV掩模检查的装置，方法和光刻系统。 EUV掩模检查系统可以包括EUV照明源，光学系统和图像传感器。 EUV照明源可以是独立的照明系统或集成到光刻系统中，其中EUV照明源可被配置为将EUV辐射束照射到掩模的目标部分上。 光学系统可以被配置为从掩模的目标部分接收反射的EUV辐射束的至少一部分。 此外，图像传感器可以被配置为检测对应于反射的EUV辐射束的该部分的空间图像。 EUV掩模检查系统还可以包括被配置为分析掩模缺陷的空中图像的数据分析装置。