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11.发明授权Bypass structure for a memory device and method to reduce unknown test values 有权用于存储器件的旁路结构和减少未知测试值的方法公开(公告)号：US08917566B2
公开(公告)日：2014-12-23
申请号：US13444229
申请日：2012-04-11
申请人： Aaron J. Cummings , Michael T. Fragano , Kevin W. Gorman , Kelly A. Ockunzzi , Michael R. Ouellette
发明人： Aaron J. Cummings , Michael T. Fragano , Kevin W. Gorman , Kelly A. Ockunzzi , Michael R. Ouellette
IPC分类号： G11C7/00
CPC分类号： G11C29/56004
摘要： Aspects of the invention provide a bypass structure for a memory device for reducing unknown test values, and a related method. In one embodiment, a bypass structure for a memory device is disclosed. The bypass structure includes: a logic gate configured to receive a test signal and a clock signal; and an output latch configured to receive an output of the logic gate, an output of the memory device, and a bypass data signal, wherein the output latch is configured to hold the bypass data signal and bypass the output of the memory device in response to asserting the test signal, such that unknown data from the output of the memory device is bypassed.
摘要翻译： 本发明的方面提供了一种用于减少未知测试值的存储器件的旁路结构以及相关方法。 在一个实施例中，公开了一种用于存储器件的旁路结构。 旁路结构包括：逻辑门，被配置为接收测试信号和时钟信号; 以及输出锁存器，被配置为接收逻辑门的输出，存储器件的输出和旁路数据信号，其中输出锁存器被配置为保持旁路数据信号并且绕过存储器件的输出以响应于 断言测试信号，使得来自存储器设备的输出的未知数据被旁路。
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12.发明授权Interleaving of memory repair data compression and fuse programming operations in single fusebay architecture 失效在单个保险丝架构中交织内存修复数据压缩和保险丝编程操作公开(公告)号：US08719648B2
公开(公告)日：2014-05-06
申请号：US13192051
申请日：2011-07-27
IPC分类号： G11C29/00
CPC分类号： G11C29/785 , G11C2029/0409 , H03M7/30
摘要： An approach for interleaving memory repair data compression and fuse programming operations in a single fusebay architecture is described. In one embodiment, the single fusebay architecture includes a multiple of pages that are used with a partitioning and interleaving approach to handling memory repair data compression and fuse programming operations. In particular, for each page in the single fusebay architecture, a memory repair data compression operation is performed on memory repair data followed by a fuse programming operation performed on the compressed memory repair data.
摘要翻译： 描述了在单个熔丝架结构中交织存储器修复数据压缩和熔丝编程操作的方法。 在一个实施例中，单个熔丝架结构包括与处理存储器修复数据压缩和熔丝编程操作的分割和交织方法一起使用的多页。 特别地，对于单个熔丝架结构中的每个页面，对存储器修复数据执行存储器修复数据压缩操作，随后对压缩存储器修复数据执行熔丝编程操作。
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13.发明申请BYPASS STRUCTURE FOR A MEMORY DEVICE AND METHOD TO REDUCE UNKNOWN TEST VALUES 有权用于存储器件的旁路结构和减少未知测试值的方法公开(公告)号：US20130272072A1
公开(公告)日：2013-10-17
申请号：US13444229
申请日：2012-04-11
申请人： Aaron J. Cummings , Michael T. Fragano , Kevin W. Gorman , Kelly A. Ockunzzi , Michael R. Ouellette
发明人： Aaron J. Cummings , Michael T. Fragano , Kevin W. Gorman , Kelly A. Ockunzzi , Michael R. Ouellette
IPC分类号： G11C7/10
CPC分类号： G11C29/56004
摘要： Aspects of the invention provide a bypass structure for a memory device for reducing unknown test values, and a related method. In one embodiment, a bypass structure for a memory device is disclosed. The bypass structure includes: a logic gate configured to receive a test signal and a clock signal; and an output latch configured to receive an output of the logic gate, an output of the memory device, and a bypass data signal, wherein the output latch is configured to hold the bypass data signal and bypass the output of the memory device in response to asserting the test signal, such that unknown data from the output of the memory device is bypassed.
摘要翻译： 本发明的方面提供了一种用于减少未知测试值的存储器件的旁路结构以及相关方法。 在一个实施例中，公开了一种用于存储器件的旁路结构。 旁路结构包括：逻辑门，被配置为接收测试信号和时钟信号; 以及输出锁存器，被配置为接收逻辑门的输出，存储器件的输出和旁路数据信号，其中输出锁存器被配置为保持旁路数据信号并且绕过存储器件的输出以响应于 断言测试信号，使得来自存储器设备的输出的未知数据被旁路。
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14.发明申请INTERLEAVING OF MEMORY REPAIR DATA COMPRESSION AND FUSE PROGRAMMING OPERATIONS IN SINGLE FUSEBAY ARCHITECTURE 失效记忆体修复数据压缩和单个保险丝架构中的保险丝编程操作公开(公告)号：US20130031319A1
公开(公告)日：2013-01-31
申请号：US13192051
申请日：2011-07-27
IPC分类号： G06F12/06
CPC分类号： G11C29/785 , G11C2029/0409 , H03M7/30
摘要： An approach for interleaving memory repair data compression and fuse programming operations in a single fusebay architecture is described. In one embodiment, the single fusebay architecture includes a multiple of pages that are used with a partitioning and interleaving approach to handling memory repair data compression and fuse programming operations. In particular, for each page in the single fusebay architecture, a memory repair data compression operation is performed on memory repair data followed by a fuse programming operation performed on the compressed memory repair data.
摘要翻译： 描述了在单个熔丝架结构中交织存储器修复数据压缩和熔丝编程操作的方法。 在一个实施例中，单个熔丝架结构包括与处理存储器修复数据压缩和熔丝编程操作的分割和交织方法一起使用的多页。 特别地，对于单个熔丝架结构中的每个页面，对存储器修复数据执行存储器修复数据压缩操作，随后对压缩存储器修复数据执行熔丝编程操作。
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公开(公告)号：US20090251978A1
公开(公告)日：2009-10-08
申请号：US12101457
申请日：2008-04-11
IPC分类号： G11C29/44
CPC分类号： H03K19/018585 , H03K19/018557 , H03K19/018592
摘要： A method, an integrated circuit structure, and an associated design structure for the integrated circuit structure have a plurality of logic blocks, at least one of which is a redundant logic block. In addition, the structure includes a logic built-in self test device (LBIST) operatively connected to the logic blocks that determines the functionality of each of the logic blocks. An array of memory elements is included within the structure and is operatively connected to the logic blocks. At least one of the memory elements comprises a redundant memory element. The structure also includes an array built-in self test device (ABIST) operatively connected to the array of memory elements that determines the functionality of each of the memory elements. One feature is the use of a single controller operatively connected to the register, the logic blocks, and the memory elements. The single controller repairs both the logic blocks elements that have failing functionality and the memory elements that have failing functionality.
摘要翻译： 用于集成电路结构的方法，集成电路结构和相关联的设计结构具有多个逻辑块，其中至少一个是冗余逻辑块。 此外，该结构包括逻辑内置自检装置（LBIST），其可操作地连接到确定每个逻辑块的功能的逻辑块。 存储器元件阵列包括在结构内并且可操作地连接到逻辑块。 存储器元件中的至少一个包括冗余存储元件。 该结构还包括可操作地连接到确定每个存储器元件的功能的存储器元件阵列的阵列内置自检器件（ABIST）。 一个特征是使用可操作地连接到寄存器，逻辑块和存储器元件的单个控制器。 单个控制器修复具有故障功能的逻辑块元素和具有故障功能的存储器元件。
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16.发明授权Automatic shutdown or throttling of a bist state machine using thermal feedback 失效使用热反馈自动关闭或调节双速状态机公开(公告)号：US07458000B2
公开(公告)日：2008-11-25
申请号：US11278238
申请日：2006-03-31
IPC分类号： G01R31/28
CPC分类号： G11C29/16 , G11C2029/5002
摘要： A Built-In-Self-Test (BIST) state machine providing BIST testing operations associated with a thermal sensor device(s) located in proximity to the circuit(s) to which BIST testing operations are applied. The thermal sensor device compares the current temperature value sensed to a predetermined temperature threshold and determines whether the predetermined threshold is exceeded. A BIST control element suspends the BIST testing operation in response to meeting or exceeding said predetermined temperature threshold, and initiates resumption of BIST testing operations when the current temperature value normalizes or is reduced. A BIST testing methodology implements steps for mitigating the exceeded temperature threshold condition in response to determining that the predetermined temperature threshold is met or exceeded. These steps include one of: ignoring the BIST results of the suspect circuit(s), or by causing the BIST state machine to enter a wait state and adjusting operating parameters of the suspect circuits while in the wait state.
摘要翻译： 内置自测试（BIST）状态机，提供与位于BIST测试操作所在电路附近的热传感器设备相关的BIST测试操作。 热传感器装置将感测到的当前温度值与预定温度阈值进行比较，并确定是否超过预定阈值。 BIST控制元件响应于满足或超过所述预定温度阈值而暂停BIST测试操作，并且当当前温度值归一化或降低时，启动BIST测试操作的恢复。 响应于确定满足或超过预定温度阈值，BIST测试方法实现了减轻超过温度阈值条件的步骤。 这些步骤包括：忽略可疑电路的BIST结果，或通过使BIST状态机进入等待状态，并在等待状态下调整可疑电路的工作参数。
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17.发明申请SYSTEM FOR AND METHOD OF PERFORMING HIGH SPEED MEMORY DIAGNOSTICS VIA BUILT-IN-SELF-TEST 有权通过内置自检来执行高速记忆诊断的系统和方法公开(公告)号：US20080082883A1
公开(公告)日：2008-04-03
申请号：US11531035
申请日：2006-09-12
IPC分类号： G01R31/28
CPC分类号： G11C29/44 , G11C2029/3202
摘要： A system for and method of performing high speed memory diagnostics via built-in-self-test (BIST) is disclosed. In particular, a test system includes a tester for testing an integrated circuit that includes a BIST circuit and a test control circuit. The BIST circuit further includes a BIST engine and fail logic for testing an imbedded memory array. The test control circuit includes three binary up/down counters, a variable delay, and a comparator circuit. A method of performing high speed memory diagnostics via BIST includes, but is not limited to, presetting the counters of the test control circuit, presetting the variable delay to a value that is equal to the latency of the fail logic, setting the BIST cycle counter to decrement mode, presetting the variable delay to zero, re-executing the test algorithm and performing a second test operation of capturing the fail data, and performing a third test operation of transmitting the fail data to the tester.
摘要翻译： 公开了一种通过内置自检（BIST）执行高速存储器诊断的系统和方法。 特别地，测试系统包括用于测试包括BIST电路和测试控制电路的集成电路的测试器。 BIST电路还包括用于测试嵌入式存储器阵列的BIST引擎和故障逻辑。 测试控制电路包括三个二进制向上/向下计数器，可变延迟和比较器电路。 通过BIST执行高速存储器诊断的方法包括但不限于预设测试控制电路的计数器，将可变延迟预设为等于故障逻辑的等待时间的值，设置BIST周期计数器 将可变延迟预置为零，重新执行测试算法并执行捕获故障数据的第二测试操作，以及执行将失败数据发送给测试者的第三测试操作。
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公开(公告)号：US20130042166A1
公开(公告)日：2013-02-14
申请号：US13204929
申请日：2011-08-08
CPC分类号： G06F11/1048 , G11C17/165 , G11C29/027 , G11C2029/0411
摘要： Error correction is selectively applied to data, such as repair data to be stored in a fusebay for BIST/BISR on an ASIC or other semiconductor device. Duplicate bit correction and error correction code state machines may be included, and selectors, such as multiplexers, may be used to enable one or both types of correction. Each state machine may include an indicator, such as a “sticky bit,” that may be activated when its type of correction is encountered. The indicator(s) may be used to develop quality and yield control criteria during manufacturing test of parts including embodiments of the invention.
摘要翻译： 选择性地将错误校正应用于数据，例如要存储在ASIC或其他半导体器件上的BIST / BISR的保险丝盒中的修复数据。 可以包括重复的位校正和纠错码状态机，并且可以使用诸如多路复用器的选择器来实现一种或两种类型的校正。 每个状态机可以包括当遇到其类型的校正时可以被激活的指示器，例如粘性位。 指示器可用于在包括本发明的实施例的部件的制造测试期间开发质量和产量控制标准。
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公开(公告)号：US07702975B2
公开(公告)日：2010-04-20
申请号：US12099382
申请日：2008-04-08
CPC分类号： H03K19/018585 , H03K19/018557 , H03K19/018592
摘要： A method, an integrated circuit structure, and an associated design structure for the integrated circuit structure have a plurality of logic blocks, at least one of which is a redundant logic block. In addition, the structure includes a logic built-in self test device (LBIST) operatively connected to the logic blocks that determines the functionality of each of the logic blocks. An array of memory elements is included within the structure and is operatively connected to the logic blocks. At least one of the memory elements comprises a redundant memory element. The structure also includes an array built-in self test device (ABIST) operatively connected to the array of memory elements that determines the functionality of each of the memory elements. One feature is the use of a single controller operatively connected to the register, the logic blocks, and the memory elements. The single controller repairs both the logic blocks elements that have failing functionality and the memory elements that have failing functionality.
摘要翻译： 用于集成电路结构的方法，集成电路结构和相关联的设计结构具有多个逻辑块，其中至少一个是冗余逻辑块。 此外，该结构包括逻辑内置自检装置（LBIST），其可操作地连接到确定每个逻辑块的功能的逻辑块。 存储器元件阵列包括在结构内并且可操作地连接到逻辑块。 存储器元件中的至少一个包括冗余存储元件。 该结构还包括可操作地连接到确定每个存储器元件的功能的存储器元件阵列的阵列内置自检器件（ABIST）。 一个特征是使用可操作地连接到寄存器，逻辑块和存储器元件的单个控制器。 单个控制器修复具有故障功能的逻辑块元素和具有故障功能的存储器元件。
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公开(公告)号：US08839054B2
公开(公告)日：2014-09-16
申请号：US13445187
申请日：2012-04-12
申请人： George M. Braceras , Albert M. Chu , Kevin W. Gorman , Michael R. Ouellette , Ronald A. Piro , Daryl M. Seitzer , Rohit Shetty , Thomas W. Wyckoff
发明人： George M. Braceras , Albert M. Chu , Kevin W. Gorman , Michael R. Ouellette , Ronald A. Piro , Daryl M. Seitzer , Rohit Shetty , Thomas W. Wyckoff
IPC分类号： G11C29/00
CPC分类号： G11C29/12 , G06F11/0793 , G11C17/00 , G11C29/4401 , G11C29/822
摘要： A read only memory (ROM) with redundancy and methods of use are provided. The ROM with redundancy includes a programmable array coupled to a repair circuit having one or more redundant repairs. The one or more redundant repairs include a word address match logic block, a data I/O address, and a tri-state buffer. The word address match logic block is provided to the tri-state buffer as a control input and the data I/O address is provided to the tri-state buffer as an input. An output of the tri-state buffer of each redundant repair is provided as a first input to one or more logic devices. One or more data outputs of a ROM bit cell array is provided as a second input to a respective one of the one or more logic devices.
摘要翻译： 提供了具有冗余性和使用方法的只读存储器（ROM）。 具有冗余的ROM包括耦合到具有一个或多个冗余修复的修复电路的可编程阵列。 一个或多个冗余修复包括字地址匹配逻辑块，数据I / O地址和三态缓冲器。 字地址匹配逻辑块作为控制输入提供给三态缓冲器，并且将数据I / O地址作为输入提供给三态缓冲器。 提供每个冗余修复的三态缓冲器的输出作为一个或多个逻辑器件的第一输入。 提供ROM位单元阵列的一个或多个数据输出作为一个或多个逻辑器件中的相应一个的第二输入。
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