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1.发明授权Automatic shutdown or throttling of a bist state machine using thermal feedback 失效使用热反馈自动关闭或调节双速状态机公开(公告)号：US07458000B2
公开(公告)日：2008-11-25
申请号：US11278238
申请日：2006-03-31
IPC分类号： G01R31/28
CPC分类号： G11C29/16 , G11C2029/5002
摘要： A Built-In-Self-Test (BIST) state machine providing BIST testing operations associated with a thermal sensor device(s) located in proximity to the circuit(s) to which BIST testing operations are applied. The thermal sensor device compares the current temperature value sensed to a predetermined temperature threshold and determines whether the predetermined threshold is exceeded. A BIST control element suspends the BIST testing operation in response to meeting or exceeding said predetermined temperature threshold, and initiates resumption of BIST testing operations when the current temperature value normalizes or is reduced. A BIST testing methodology implements steps for mitigating the exceeded temperature threshold condition in response to determining that the predetermined temperature threshold is met or exceeded. These steps include one of: ignoring the BIST results of the suspect circuit(s), or by causing the BIST state machine to enter a wait state and adjusting operating parameters of the suspect circuits while in the wait state.
摘要翻译： 内置自测试（BIST）状态机，提供与位于BIST测试操作所在电路附近的热传感器设备相关的BIST测试操作。 热传感器装置将感测到的当前温度值与预定温度阈值进行比较，并确定是否超过预定阈值。 BIST控制元件响应于满足或超过所述预定温度阈值而暂停BIST测试操作，并且当当前温度值归一化或降低时，启动BIST测试操作的恢复。 响应于确定满足或超过预定温度阈值，BIST测试方法实现了减轻超过温度阈值条件的步骤。 这些步骤包括：忽略可疑电路的BIST结果，或通过使BIST状态机进入等待状态，并在等待状态下调整可疑电路的工作参数。
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2.发明授权Structure for system for and method of performing high speed memory diagnostics via built-in-self-test 失效用于通过内置自检进行高速存储器诊断的系统和方法的结构公开(公告)号：US07870454B2
公开(公告)日：2011-01-11
申请号：US12126452
申请日：2008-05-23
CPC分类号： G11C29/40 , G01R31/31703 , G01R31/31704 , G11C2029/3202
摘要： A design structure for a system for and method of performing high speed memory diagnostics via built-in-self-test (BIST) is disclosed. In particular, a test system includes a tester for testing an integrated circuit that includes a BIST circuit and a test control circuit. The BIST circuit further includes a BIST engine and fail logic for testing an imbedded memory array. The test control circuit includes three binary up/down counters, a variable delay, and a comparator circuit. A method of performing high speed memory diagnostics via BIST includes, but is not limited to, presetting the counters of the test control circuit, presetting the variable delay to a value that is equal to the latency of the fail logic, setting the BIST cycle counter to decrement mode, presetting the variable delay to zero, re-executing the test algorithm and performing a second test operation of capturing the fail data, and performing a third test operation of transmitting the fail data to the tester.
摘要翻译： 公开了一种用于通过内置自检（BIST）执行高速存储器诊断的系统和方法的设计结构。 特别地，测试系统包括用于测试包括BIST电路和测试控制电路的集成电路的测试器。 BIST电路还包括用于测试嵌入式存储器阵列的BIST引擎和故障逻辑。 测试控制电路包括三个二进制向上/向下计数器，可变延迟和比较器电路。 通过BIST执行高速存储器诊断的方法包括但不限于预设测试控制电路的计数器，将可变延迟预设为等于故障逻辑的等待时间的值，设置BIST周期计数器 将可变延迟预置为零，重新执行测试算法并执行捕获故障数据的第二测试操作，以及执行将失败数据发送给测试者的第三测试操作。
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3.发明授权System and method for performing high speed memory diagnostics via built-in-self-test 有权通过内置自检进行高速存储器诊断的系统和方法公开(公告)号：US07607060B2
公开(公告)日：2009-10-20
申请号：US11531035
申请日：2006-09-12
CPC分类号： G11C29/44 , G11C2029/3202
摘要： A system and method for performing high speed memory diagnostics via built-in-self-test (BIST). A test system includes a tester for testing an integrated circuit that includes a BIST circuit and a test control circuit. The BIST circuit further includes a BIST engine and fail logic for testing an imbedded memory array. The test control circuit includes three binary up/down counters, a variable delay, and a comparator circuit. A method includes presetting the counters of the test control circuit, presetting the variable delay to a value that is equal to the latency of the fail logic, setting the BIST cycle counter to decrement mode, presetting the variable delay to zero, re-executing the test algorithm, performing a second test operation of capturing the fail data, and performing a third test operation of transmitting the fail data to the tester.
摘要翻译： 一种用于通过内置自检（BIST）执行高速存储器诊断的系统和方法。 测试系统包括用于测试包括BIST电路和测试控制电路的集成电路的测试器。 BIST电路还包括用于测试嵌入式存储器阵列的BIST引擎和故障逻辑。 测试控制电路包括三个二进制向上/向下计数器，可变延迟和比较器电路。 一种方法包括预设测试控制电路的计数器，将可变延迟预设为等于故障逻辑等待时间的值，将BIST周期计数器设置为递减模式，将可变延迟预置为零，重新执行 测试算法，执行捕获故障数据的第二测试操作，以及执行将失败数据发送给测试者的第三测试操作。
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4.发明授权Automatic shutdown or throttling of a BIST state machine using thermal feedback 失效使用热反馈自动关闭或调节BIST状态机公开(公告)号：US07689887B2
公开(公告)日：2010-03-30
申请号：US11962781
申请日：2007-12-21
CPC分类号： G11C29/14 , G01K3/005 , G11C29/12 , G11C2029/5002
摘要： A Built-In-Self-Test (BIST) state machine providing BIST testing operations associated with a thermal sensor device(s) located in proximity to the circuit(s) to which BIST testing operations are applied, and a design structure including the BIST state machine embodied in a machine readable medium are provided. The thermal sensor device compares the current temperature value sensed to a predetermined temperature threshold and determines whether the predetermined threshold is exceeded. A BIST control element suspends the BIST testing operation in response to meeting or exceeding said predetermined temperature threshold, and initiates resumption of BIST testing operations when the current temperature value normalizes or is reduced. A BIST testing methodology implements steps for mitigating the exceeded temperature threshold condition in response to determining that the predetermined temperature threshold is met or exceeded. These steps include one of: ignoring the BIST results of the suspect circuit(s), or by causing the BIST state machine to enter a wait state and adjusting operating parameters of the suspect circuits while in the wait state.
摘要翻译： 内置自测试（BIST）状态机，提供与位于BIST测试操作所在电路附近的热传感器设备相关联的BIST测试操作，以及包括BIST的设计结构 提供了体现在机器可读介质中的状态机。 热传感器装置将感测到的当前温度值与预定温度阈值进行比较，并确定是否超过预定阈值。 BIST控制元件响应于满足或超过所述预定温度阈值而暂停BIST测试操作，并且当当前温度值归一化或降低时，启动BIST测试操作的恢复。 响应于确定满足或超过预定温度阈值，BIST测试方法实现了减轻超过温度阈值条件的步骤。 这些步骤包括：忽略可疑电路的BIST结果，或通过使BIST状态机进入等待状态，并在等待状态下调整可疑电路的工作参数。
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5.发明申请公开(公告)号：US20090161722A1
公开(公告)日：2009-06-25
申请号：US11962781
申请日：2007-12-21
IPC分类号： G01K13/00
CPC分类号： G11C29/14 , G01K3/005 , G11C29/12 , G11C2029/5002
摘要： A Built-In-Self-Test (BIST) state machine providing BIST testing operations associated with a thermal sensor device(s) located in proximity to the circuit(s) to which BIST testing operations are applied, and a design structure including the BIST state machine embodied in a machine readable medium are provided. The thermal sensor device compares the current temperature value sensed to a predetermined temperature threshold and determines whether the predetermined threshold is exceeded. A BIST control element suspends the BIST testing operation in response to meeting or exceeding said predetermined temperature threshold, and initiates resumption of BIST testing operations when the current temperature value normalizes or is reduced. A BIST testing methodology implements steps for mitigating the exceeded temperature threshold condition in response to determining that the predetermined temperature threshold is met or exceeded. These steps include one of: ignoring the BIST results of the suspect circuit(s), or by causing the BIST state machine to enter a wait state and adjusting operating parameters of the suspect circuits while in the wait state.
摘要翻译： 内置自测试（BIST）状态机，提供与位于BIST测试操作所在电路附近的热传感器设备相关联的BIST测试操作，以及包括BIST的设计结构 提供了体现在机器可读介质中的状态机。 热传感器装置将感测到的当前温度值与预定温度阈值进行比较，并确定是否超过预定阈值。 BIST控制元件响应于满足或超过所述预定温度阈值而暂停BIST测试操作，并且当当前温度值归一化或降低时，启动BIST测试操作的恢复。 响应于确定满足或超过预定温度阈值，BIST测试方法实现了减轻超过温度阈值条件的步骤。 这些步骤包括：忽略可疑电路的BIST结果，或通过使BIST状态机进入等待状态，并在等待状态下调整可疑电路的工作参数。
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6.发明申请Structure for System for and Method of Performing High Speed Memory Diagnostics Via Built-In-Self-Test 失效通过内置自检执行高速内存诊断的系统和方法的结构公开(公告)号：US20080222464A1
公开(公告)日：2008-09-11
申请号：US12126452
申请日：2008-05-23
CPC分类号： G11C29/40 , G01R31/31703 , G01R31/31704 , G11C2029/3202
摘要： A design structure for a system for and method of performing high speed memory diagnostics via built-in-self-test (BIST) is disclosed. In particular, a test system includes a tester for testing an integrated circuit that includes a BIST circuit and a test control circuit. The BIST circuit further includes a BIST engine and fail logic for testing an imbedded memory array. The test control circuit includes three binary up/down counters, a variable delay, and a comparator circuit. A method of performing high speed memory diagnostics via BIST includes, but is not limited to, presetting the counters of the test control circuit, presetting the variable delay to a value that is equal to the latency of the fail logic, setting the BIST cycle counter to decrement mode, presetting the variable delay to zero, re-executing the test algorithm and performing a second test operation of capturing the fail data, and performing a third test operation of transmitting the fail data to the tester.
摘要翻译： 公开了一种用于通过内置自检（BIST）执行高速存储器诊断的系统和方法的设计结构。 特别地，测试系统包括用于测试包括BIST电路和测试控制电路的集成电路的测试器。 BIST电路还包括用于测试嵌入式存储器阵列的BIST引擎和故障逻辑。 测试控制电路包括三个二进制向上/向下计数器，可变延迟和比较器电路。 通过BIST执行高速存储器诊断的方法包括但不限于预设测试控制电路的计数器，将可变延迟预设为等于故障逻辑的等待时间的值，设置BIST周期计数器 将可变延迟预置为零，重新执行测试算法并执行捕获故障数据的第二测试操作，以及执行将失败数据发送给测试者的第三测试操作。
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7.发明授权Structure and method for storing multiple repair pass data into a fusebay 有权用于将多个修复传递数据存储到保险丝盒中的结构和方法公开(公告)号：US08467260B2
公开(公告)日：2013-06-18
申请号：US13198894
申请日：2011-08-05
IPC分类号： G11C17/16
CPC分类号： G11C17/16 , G11C29/785 , G11C29/802
摘要： Fuse macros of identical number of pages are serially arranged to form the same number of fusebay pages each having a length equal to the sum of the respective fuse macro page lengths. Each fuse macro has an enable latch configured to allow activation of one fuse macro at a time. A fusebay control device connected to a repair register may store data in and retrieve data from the fusebay. Next available fuse location is determined in programming mode so that data from a next repair pass may start where the last data ended.
摘要翻译： 相同页数的保险丝宏串联地形成相同数量的保险丝页，每个保险丝页的长度等于相应的熔丝宏页面长度之和。 每个保险丝宏都有一个使能锁存器，配置为允许一次激活一个保险丝宏。 连接到维修寄存器的保险丝控制装置可以将数据存储在保险丝盒中并从熔丝座检索数据。 在编程模式下确定下一个可用的熔丝位置，以便下一个维修通过的数据可以在最后一个数据结束的地方开始。
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公开(公告)号：US20130042166A1
公开(公告)日：2013-02-14
申请号：US13204929
申请日：2011-08-08
CPC分类号： G06F11/1048 , G11C17/165 , G11C29/027 , G11C2029/0411
摘要： Error correction is selectively applied to data, such as repair data to be stored in a fusebay for BIST/BISR on an ASIC or other semiconductor device. Duplicate bit correction and error correction code state machines may be included, and selectors, such as multiplexers, may be used to enable one or both types of correction. Each state machine may include an indicator, such as a “sticky bit,” that may be activated when its type of correction is encountered. The indicator(s) may be used to develop quality and yield control criteria during manufacturing test of parts including embodiments of the invention.
摘要翻译： 选择性地将错误校正应用于数据，例如要存储在ASIC或其他半导体器件上的BIST / BISR的保险丝盒中的修复数据。 可以包括重复的位校正和纠错码状态机，并且可以使用诸如多路复用器的选择器来实现一种或两种类型的校正。 每个状态机可以包括当遇到其类型的校正时可以被激活的指示器，例如粘性位。 指示器可用于在包括本发明的实施例的部件的制造测试期间开发质量和产量控制标准。
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公开(公告)号：US07702975B2
公开(公告)日：2010-04-20
申请号：US12099382
申请日：2008-04-08
CPC分类号： H03K19/018585 , H03K19/018557 , H03K19/018592
摘要： A method, an integrated circuit structure, and an associated design structure for the integrated circuit structure have a plurality of logic blocks, at least one of which is a redundant logic block. In addition, the structure includes a logic built-in self test device (LBIST) operatively connected to the logic blocks that determines the functionality of each of the logic blocks. An array of memory elements is included within the structure and is operatively connected to the logic blocks. At least one of the memory elements comprises a redundant memory element. The structure also includes an array built-in self test device (ABIST) operatively connected to the array of memory elements that determines the functionality of each of the memory elements. One feature is the use of a single controller operatively connected to the register, the logic blocks, and the memory elements. The single controller repairs both the logic blocks elements that have failing functionality and the memory elements that have failing functionality.
摘要翻译： 用于集成电路结构的方法，集成电路结构和相关联的设计结构具有多个逻辑块，其中至少一个是冗余逻辑块。 此外，该结构包括逻辑内置自检装置（LBIST），其可操作地连接到确定每个逻辑块的功能的逻辑块。 存储器元件阵列包括在结构内并且可操作地连接到逻辑块。 存储器元件中的至少一个包括冗余存储元件。 该结构还包括可操作地连接到确定每个存储器元件的功能的存储器元件阵列的阵列内置自检器件（ABIST）。 一个特征是使用可操作地连接到寄存器，逻辑块和存储器元件的单个控制器。 单个控制器修复具有故障功能的逻辑块元素和具有故障功能的存储器元件。
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10.发明授权Bypass structure for a memory device and method to reduce unknown test values 有权用于存储器件的旁路结构和减少未知测试值的方法公开(公告)号：US08917566B2
公开(公告)日：2014-12-23
申请号：US13444229
申请日：2012-04-11
申请人： Aaron J. Cummings , Michael T. Fragano , Kevin W. Gorman , Kelly A. Ockunzzi , Michael R. Ouellette
发明人： Aaron J. Cummings , Michael T. Fragano , Kevin W. Gorman , Kelly A. Ockunzzi , Michael R. Ouellette
IPC分类号： G11C7/00
CPC分类号： G11C29/56004
摘要： Aspects of the invention provide a bypass structure for a memory device for reducing unknown test values, and a related method. In one embodiment, a bypass structure for a memory device is disclosed. The bypass structure includes: a logic gate configured to receive a test signal and a clock signal; and an output latch configured to receive an output of the logic gate, an output of the memory device, and a bypass data signal, wherein the output latch is configured to hold the bypass data signal and bypass the output of the memory device in response to asserting the test signal, such that unknown data from the output of the memory device is bypassed.
摘要翻译： 本发明的方面提供了一种用于减少未知测试值的存储器件的旁路结构以及相关方法。 在一个实施例中，公开了一种用于存储器件的旁路结构。 旁路结构包括：逻辑门，被配置为接收测试信号和时钟信号; 以及输出锁存器，被配置为接收逻辑门的输出，存储器件的输出和旁路数据信号，其中输出锁存器被配置为保持旁路数据信号并且绕过存储器件的输出以响应于 断言测试信号，使得来自存储器设备的输出的未知数据被旁路。
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