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公开(公告)号：US11944018B2
公开(公告)日：2024-03-26
申请号：US17858200
申请日：2022-07-06
Applicant: TDK CORPORATION
Inventor： Kazuumi Inubushi , Katsuyuki Nakada , Shinto Ichikawa
CPC classification number: H10N50/85 , H10N50/10 , G11B5/372 , G11C11/161
Abstract: A magnetoresistance effect element of the present disclosure includes a first Ru alloy layer, a first ferromagnetic layer, a non-magnetic metal layer, and a second ferromagnetic layer in order, wherein the first Ru alloy layer contains one or more Ru alloys represented by the following general formula (1),
RuαX1-α (1)
where, in the general formula (1), the symbol X represents one or more elements selected from the group consisting of Be, B, Ti, Y, Zr, Nb, Mo, Rh, In, Sn, La, Ce, Nd, Sm, Gd, Dy, Er, Ta, W, Re, Os, and Ir, and the symbol α represents a number satisfying 0.5-
12.发明授权公开(公告)号：US11585873B2
公开(公告)日：2023-02-21
申请号：US17370613
申请日：2021-07-08
Applicant: TDK CORPORATION , NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor： Shinto Ichikawa , Katsuyuki Nakada , Hiroaki Sukegawa , Seiji Mitani , Tadakatsu Ohkubo , Kazuhiro Hono
Abstract: A magnetoresistive effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein the non-magnetic layer includes a first layer and a second layer, and wherein a lattice constant α of the first layer and a lattice constant β of the second layer satisfy a relationship of β−0.04×α≤2×α≤β+0.04×α.
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公开(公告)号：US11525873B2
公开(公告)日：2022-12-13
申请号：US17164958
申请日：2021-02-02
Applicant: TDK CORPORATION
Inventor： Shinto Ichikawa , Kazuumi Inubushi , Katsuyuki Nakada
Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a first non-magnetic layer; and a second non-magnetic layer, wherein, the first ferromagnetic layer and the second ferromagnetic layer are formed so that at least one of them includes a Heusler alloy layer, the first non-magnetic layer is provided between the first ferromagnetic layer and the second ferromagnetic layer, the second non-magnetic layer is in contact with any surface of the Heusler alloy layer and has a discontinuous portion with respect to a lamination surface, and the second non-magnetic layer is made of a material different from that of the first non-magnetic layer and is a (001)-oriented oxide containing Mg.
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公开(公告)号：US11450342B2
公开(公告)日：2022-09-20
申请号：US17356038
申请日：2021-06-23
Applicant: TDK CORPORATION
Inventor： Kazuumi Inubushi , Katsuyuki Nakada
Abstract: A magnetoresistance effect element includes a underlayer, a protective layer, a laminated body located between the underlayer and the protective layer and including a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer in order from a side closest to the underlayer, and an intermediate layer located between the underlayer and the first ferromagnetic layer, or between the second ferromagnetic layer and the protective layer, wherein, one ferromagnetic layer selected from the first ferromagnetic layer and the second ferromagnetic layer and in contact with the intermediate layer is a Heusler alloy having a Co basis, and a main component of the intermediate layer is an element other than Co among elements constituting the Heusler alloy having the Co basis.
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公开(公告)号：US20210384414A1
公开(公告)日：2021-12-09
申请号：US17407815
申请日：2021-08-20
Applicant: TDK CORPORATION
Inventor： Katsuyuki Nakada , Yohei Shiokawa
Abstract: This spin-orbit-torque magnetization rotating element includes a spin-orbit torque wiring extending in a first direction and a first ferromagnetic layer laminated on the spin-orbit torque wiring, wherein the spin-orbit torque wiring includes a compound represented by XYZ or X2YZ with respect to a stoichiometric composition.
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Patent Agency Ranking
公开(公告)号：US11158785B2
公开(公告)日：2021-10-26
申请号：US17131069
申请日：2020-12-22
Applicant: TDK CORPORATION
Inventor： Shinto Ichikawa , Kazuumi Inubushi , Katsuyuki Nakada
Abstract: A magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a first layer and a second layer in order from the side closer to the non-magnetic layer, the first layer contains a crystallized Co-based Heusler alloy, at least a part of the second layer is crystallized, the second layer contains a ferromagnetic element, boron element and an additive element, and the additive element is any element selected from a group consisting of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt, and Au.
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公开(公告)号：US10971679B2
公开(公告)日：2021-04-06
申请号：US16720085
申请日：2019-12-19
Applicant: TDK CORPORATION
Inventor： Kazuumi Inubushi , Katsuyuki Nakada
Abstract: A magnetoresistive effect element, which includes: a first ferromagnetic layer as a magnetization fixed layer; a second ferromagnetic layer as a magnetization free layer; and a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer. The nonmagnetic spacer layer includes an Ag alloy represented by General Formula (1), and thereby lattice mismatch between the nonmagnetic spacer layer, and the first ferromagnetic layer and/or the second ferromagnetic layer is reduced, compared to lattice mismatch when the nonmagnetic spacer layer is formed of Ag, AgγX1-γ (1) where X indicates one element selected from the group made of Al, Cu, Ga, Ge, As, Y, La, Sm, Yb, and Pt, and 0
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18.发明授权公开(公告)号：US10937451B2
公开(公告)日：2021-03-02
申请号：US16817690
申请日：2020-03-13
Applicant: TDK CORPORATION
Inventor： Kazuumi Inubushi , Katsuyuki Nakada
Abstract: A magnetoresistive effect element according to the present invention includes: a first ferromagnetic layer as a magnetization fixed layer; a second ferromagnetic layer as a magnetization free layer; and a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer. The nonmagnetic spacer layer comprises an Al alloy represented by General Formula (1), and thereby lattice mismatch between the nonmagnetic spacer layer and the first ferromagnetic layer and/or the second ferromagnetic layer is reduced, compared to lattice mismatch when the nonmagnetic spacer layer is formed of Al. AlγX1-γ (1) [wherein, X indicates one element selected from the group consisting of Li, N, Mg, Si, Sc, Cr, Fe, Ni, Cu, Zn, Ga, Ge, Zr, Ru, Pd, Ag, Sn, W, Pt, Au and Th, and γ is 0.5
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公开(公告)号：US10461244B2
公开(公告)日：2019-10-29
申请号：US15993783
申请日：2018-05-31
Applicant: TDK CORPORATION
Inventor： Eiji Suzuki , Katsuyuki Nakada
Abstract: A laminated structure according to an embodiment includes: a ferromagnetic layer; and a multiferroic layer formed on one surface of the ferromagnetic layer, wherein a surface of the multiferroic layer on the ferromagnetic layer side includes a first region, a crystalline phase of which is rhombohedral, and a second region, a crystalline phase of which is tetragonal.
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公开(公告)号：US11769523B2
公开(公告)日：2023-09-26
申请号：US17853429
申请日：2022-06-29
Applicant: TDK CORPORATION
Inventor： Kazuumi Inubushi , Katsuyuki Nakada , Tetsuya Uemura
CPC classification number: G11B5/3903 , G01R33/093 , G11B5/3929 , G11C11/161 , H01F10/1936 , H01F10/325 , H10B61/00 , H10N50/85 , G11B2005/3996
Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1):
Co2FeαXβ (1)
(in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and α and β represent numbers that satisfy 2.3≤α+β, α
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