公开(公告)号：US20200057122A1

公开(公告)日：2020-02-20

申请号：US16662697

申请日：2019-10-24

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: G01R33/09 ,  G11C11/16 ,  H01L27/22 ,  H01L43/10 ,  H01L43/08

Abstract: The present invention provides a magnetoresistance effect element that has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer provided between the first ferromagnetic metal layer and the second ferromagnetic metal layer. The tunnel barrier layer has a cubic crystal structure, and the first ferromagnetic metal layer or the second ferromagnetic metal layer is formed of a material having a cubic crystal structure represented by Fe2CoSi. A crystal surface for crystals constituting the tunnel barrier layer and a crystal surface for crystals constituting the first ferromagnetic metal layer or the second ferromagnetic metal layer are matched to be inclined at 0° or 45° in at least a part of a crystal interface between the tunnel barrier layer and the first ferromagnetic metal layer or the second ferromagnetic metal layer.

公开(公告)号：US20200052194A1

公开(公告)日：2020-02-13

申请号：US16587178

申请日：2019-09-30

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Tatsuo SHIBATA ,  Katsuyuki NAKADA ,  Yoshitomo TANAKA

IPC: H01L43/08 ,  G11B5/39 ,  H01L45/00 ,  H01L43/12 ,  H01L43/02 ,  H01L27/22 ,  G11C11/16 ,  H01L43/10

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.

公开(公告)号：US20200013457A1

公开(公告)日：2020-01-09

申请号：US16571556

申请日：2019-09-16

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: G11C11/56 ,  G11C11/16 ,  G11C11/54 ,  H01F10/32 ,  H01L27/22 ,  H01L43/02 ,  H03K19/18

Abstract: A magnetic wall utilization-analog memory element includes a magnetic wall driving layer including a magnetic wall, a first region, a second region, and a third region located between the first region and the second region, a magnetization fixed layer provided at a the third region through a nonmagnetic layer, and a lower electrode layer provided at a position in the third region that overlaps the magnetization fixed layer in plan view on a second surface opposite to a first surface on which the magnetization fixed layer is provided.

公开(公告)号：US20200006640A1

公开(公告)日：2020-01-02

申请号：US16570300

申请日：2019-09-13

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: H01L43/02 ,  H01L43/10 ,  G11C11/16 ,  H01L43/08

Abstract: A magnetoresistance effect element has favorable symmetry of an MR ratio even if the sign of a bias voltage is different, which is capable of reversing magnetization to a current, which has a high MR ratio. A magnetoresistance effect element includes a laminate in which an underlayer, a first ferromagnetic metal layer, a tunnel barrier layer, and a second ferromagnetic metal layer are laminated in that order. The underlayer is made of one or more selected from a group containing of TiN, VN, NbN, and TaN, or mixed crystals thereof. The tunnel barrier layer is made of a compound having a spinel structure and represented by the following composition formula (1): AxGa2Oy, where A is a non-magnetic divalent cation and represents a cation of at least one element among magnesium, zinc, and cadmium, x is a number satisfying 0

公开(公告)号：US20190333966A1

公开(公告)日：2019-10-31

申请号：US16080971

申请日：2017-10-16

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yoshitomo TANAKA

IPC: H01L27/22 ,  H01F10/32 ,  G11C11/16 ,  H01L23/522 ,  H01L43/02 ,  H01L43/12 ,  H01F41/34 ,  H01L23/528

Abstract: A TMR element includes a base layer that is disposed on an upper surface of a via interconnect part, a magnetic tunnel junction that is disposed on a surface of the base layer, and an interlayer insulation layer that covers a side surface of each of the via interconnect part and the base layer. The base layer includes a stress relieving region. The magnetic tunnel junction includes a reference layer having a magnetization fixed direction, a magnetization free layer, and a tunnel barrier layer disposed between the reference layer and the magnetization free layer. The interlayer insulation layer includes an insulation material.

公开(公告)号：US20190148629A1

公开(公告)日：2019-05-16

申请号：US16178082

申请日：2018-11-01

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA ,  Eiji KOMURA ,  Keita SUDA

IPC: H01L43/10 ,  G11C11/18 ,  G11C11/16

Abstract: Provided is a spin-orbit-torque magnetization rotational element that suppresses re-adhesion of impurities during preparation and allows a write current to easily flow. The spin-orbit-torque magnetization rotational element includes a spin-orbit torque wiring that extends in a first direction, and a first ferromagnetic layer that is located on a side of one surface of the spin-orbit torque wiring. A side surface of the spin-orbit torque wiring and a side surface of the first ferromagnetic layer form a continuous inclined surface in any side surface.

公开(公告)号：US20190074043A1

公开(公告)日：2019-03-07

申请号：US16114692

申请日：2018-08-28

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA ,  Jiro YOSHINARI

IPC: G11C11/16 ,  G01R33/09 ,  H01L43/04 ,  H01L43/06 ,  H01L43/08 ,  H01L43/10 ,  H01L43/14

Abstract: A spin current magnetization reversing element (100) includes a spin orbit torque wiring layer (101) that extends in one direction, a first ferromagnetic layer (102) that is formed on a first surface (101a) of the spin orbit torque wiring layer, and a first insulating layer (103) that is formed on a second surface (101b) on a side opposite to the first ferromagnetic layer (102) side on the surface of the spin orbit torque wiring layer. The first insulating layer (103) contains boron nitride or aluminum nitride.

公开(公告)号：US20180350417A1

公开(公告)日：2018-12-06

申请号：US15778115

申请日：2016-11-25

Applicant: TDK CORPORATION

Inventor： Yohei SHIOKAWA ,  Tomoyuki SASAKI

IPC: G11C11/16 ,  G01R33/09 ,  H01L43/08 ,  H01L43/10 ,  H03B15/00

Abstract: A spin current magnetization reversal element includes: a first ferromagnetic metal layer with a changeable magnetization direction, and a spin-orbit torque wiring, wherein a first direction is defined as a direction perpendicular to a surface of the first ferromagnetic metal layer, the wiring extends in a second direction intersecting the first and is bonded to a first surface of the first ferromagnetic metal layer, wherein the wiring includes a pure spin current generator which is bonded to the metal layer, and a low-resistance portion which is connected to both ends of the generator in the second direction and is formed of a material having a smaller electrical resistivity than the generator, and the generator is formed so that an area of a cross-section orthogonal to the first direction continuously and/or stepwisely increases as it recedes from a bonding surface bonded to the first ferromagnetic metal layer in the first direction.

公开(公告)号：US20180308535A1

公开(公告)日：2018-10-25

申请号：US15956523

申请日：2018-04-18

Applicant: TDK CORPORATION

Inventor： Yohei SHIOKAWA ,  Tomoyuki SASAKI

IPC: G11C11/16 ,  G01R33/09 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC classification number: G11C11/161 ,  G01R33/098 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A spin current magnetization rotational element including a first ferromagnetic metal layer in which a magnetization direction is variable, and a spin-orbit torque wiring that extends in a second direction intersecting a first direction that is a plane-orthogonal direction of the first ferromagnetic metal layer, and is joined to the first ferromagnetic metal layer. The first ferromagnetic metal layer has a lamination structure including a plurality of ferromagnetic constituent layers and a plurality of nonmagnetic constituent layers which are respectively interposed between the ferromagnetic constituent layers adjacent to each other. At least one ferromagnetic constituent layer among the plurality of ferromagnetic constituent layers has a film thickness different from a film thickness of the other ferromagnetic constituent layers, and/or at least one nonmagnetic constituent layer among the plurality of nonmagnetic constituent layers has a film thickness different from a film thickness of the other nonmagnetic constituent layers.

公开(公告)号：US20180159026A1

公开(公告)日：2018-06-07

申请号：US15827852

申请日：2017-11-30

Applicant: TDK CORPORATION

Inventor： Yohei SHIOKAWA ,  Tomoyuki SASAKI ,  Tatsuo SHIBATA

IPC: H01L43/08 ,  H01L43/02 ,  G11C11/16 ,  H01L43/10 ,  H01L27/22

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10

Abstract: A spin current magnetization rotational element includes: a magnetization free layer including a synthetic structure consisting of a first ferromagnetic metal layer, a second ferromagnetic metal layer and a first non-magnetic layer sandwiched by the first ferromagnetic metal layer and the second ferromagnetic metal layer; and an antiferromagnetic spin-orbit torque wiring that extends in a second direction intersecting with a first direction that is a lamination direction of the synthetic structure and is joined to the first ferromagnetic metal layer, wherein the spin current magnetization rotational element is configured to change a magnetization direction of the magnetization free layer by applying current to the antiferromagnetic spin-orbit torque wiring.