THROUGH-SUBSTRATE CONDUCTOR SUPPORT
    11.
    发明申请

    公开(公告)号:US20190382262A1

    公开(公告)日:2019-12-19

    申请号:US16551108

    申请日:2019-08-26

    Abstract: In described examples, a first device on a first surface of a substrate is coupled to a structure arranged on a second surface of the substrate. In at least one example, a first conductor arranged on the first surface is coupled to circuitry of the first device. An elevated portion of the first conductor is supported by disposing an encapsulate and curing the encapsulate. The first conductor is severed by cutting the encapsulate and the first conductor. A second conductor is coupled to the first conductor. The second conductor is coupled to the structure arranged on the second surface of the substrate.

    VERTICAL SHEAR WELD WAFER BONDING
    14.
    发明申请

    公开(公告)号:US20210371272A1

    公开(公告)日:2021-12-02

    申请号:US17399832

    申请日:2021-08-11

    Abstract: In described examples, a first metal layer is configured along a periphery of a cavity to be formed between a first substrate and a second substrate. A second metal layer is adjacent the first metal layer. The second metal layer includes a cantilever. The cantilever is configured to deform by bonding the first substrate to the second substrate. The deformed cantilevered is configured to impede contaminants against contacting an element within the cavity.

    Selective wafer removal process for wafer bonding applications

    公开(公告)号:US11167983B2

    公开(公告)日:2021-11-09

    申请号:US16450138

    申请日:2019-06-24

    Abstract: A method includes attaching an optically transparent wafer to a first surface of an interposer wafer. The interposer wafer has a second surface opposite the first surface, and the second surface has a first channel therein. The method further includes attaching the interposer wafer to a first surface of a semiconductor wafer, and etching a second channel through the optically transparent wafer and through the interposer wafer. The method then includes applying wax into the second channel, and sawing through the optically transparent wafer and through at least a portion of the interposer wafer to form a third channel having a width that is wider than a width of the second channel. The wax is then removed to expose a portion of the first surface of the semiconductor wafer.

    Hermetically sealed MEMS device and its fabrication

    公开(公告)号:US10427932B2

    公开(公告)日:2019-10-01

    申请号:US15879212

    申请日:2018-01-24

    Abstract: In described examples, a hermetic package of a microelectromechanical system (MEMS) structure includes a substrate having a surface with a MEMS structure of a first height. The substrate is hermetically sealed to a cap forming a cavity over the MEMS structure. The cap is attached to the substrate surface by a vertical stack of metal layers adhering to the substrate surface and to the cap. The stack has a continuous outline surrounding the MEMS structure while spaced from the MEMS structure by a distance. The stack has: a first bottom metal seed film adhering to the substrate and a second bottom metal seed film adhering to the first bottom metal seed film; and a first top metal seed film adhering to the cap and a second top metal seed film adhering to the first top metal seed film.

    Through-substrate conductor support

    公开(公告)号:US10392246B2

    公开(公告)日:2019-08-27

    申请号:US15433704

    申请日:2017-02-15

    Abstract: In described examples, a first device on a first surface of a substrate is coupled to a structure arranged on a second surface of the substrate. In at least one example, a first conductor arranged on the first surface is coupled to circuitry of the first device. An elevated portion of the first conductor is supported by disposing an encapsulate and curing the encapsulate. The first conductor is severed by cutting the encapsulate and the first conductor. A second conductor is coupled to the first conductor. The second conductor is coupled to the structure arranged on the second surface of the substrate.

Patent Agency Ranking