Heat slug attached to a die pad for semiconductor package

    公开(公告)号:US12136588B2

    公开(公告)日:2024-11-05

    申请号:US17379934

    申请日:2021-07-19

    Abstract: A semiconductor package includes a leadframe including leads and a die attach pad (DAP) inside the leads, and at least one semiconductor die having a top side including circuitry electrically connected to bond pads and a bottom side attached to a bottom side portion of the DAP. The package includes a mold compound and a heat slug having a top side and a bottom side positioned within a cavity defined by sidewalls of the mold compound. The heat slug has an area greater than an area of the DAP is attached by its bottom side with a thermally conductive adhesive material to a top side portion of the DAP. Bondwires are between the leads and the bond pads. Exposed from the mold compound is a bottom side surfaces of the leads and the top side of the heat slug.

    Power converter module
    15.
    发明授权

    公开(公告)号:US11601065B1

    公开(公告)日:2023-03-07

    申请号:US17461423

    申请日:2021-08-30

    Abstract: A power converter module includes power transistors and a substrate having a first surface and a second surface that opposes the first surface. A thermal pad is situated on the second surface of the substrate, and the thermal pad is configured to be thermally coupled to a heat sink. The power converter module also includes a control module mounted on a first surface of the substrate. The control module also includes control IC chips coupled to the power transistors. A first control IC chip controls a first switching level of the power converter module and a second control IC chip controls a second switching level of the power converter module. Shielding planes overlay the substrate. A first shielding plane is situated between the thermal pad and the first control IC chip and a second shielding plane is situated between the thermal pad and a second control IC chip.

    SEMICONDUCTOR PACKAGE WITH TOPSIDE COOLING

    公开(公告)号:US20230015323A1

    公开(公告)日:2023-01-19

    申请号:US17379934

    申请日:2021-07-19

    Abstract: A semiconductor package includes a leadframe including leads and a die attach pad (DAP) inside the leads, and at least one semiconductor die having a top side including circuitry electrically connected to bond pads and a bottom side attached to a bottom side portion of the DAP. The package includes a mold compound and a heat slug having a top side and a bottom side positioned within a cavity defined by sidewalls of the mold compound. The heat slug has an area greater than an area of the DAP is attached by its bottom side with a thermally conductive adhesive material to a top side portion of the DAP. Bondwires are between the leads and the bond pads. Exposed from the mold compound is a bottom side surfaces of the leads and the top side of the heat slug.

    MULTI-CHIP PACKAGE WITH REINFORCED ISOLATION

    公开(公告)号:US20220271008A1

    公开(公告)日:2022-08-25

    申请号:US17741402

    申请日:2022-05-10

    Abstract: A multi-chip isolation (ISO) device package includes a leadframe including leads, an interposer substrate including a top copper layer and a bottom metal layer, with a dielectric layer in-between. A first IC die and a second IC die include circuitry including a transmitter or a receiver, and first and second bond pads are both attached top side up in the package. A laminate transformer is attached to the top copper layer positioned lateral to the IC die. Bondwires wirebond the first bond pads to first pads on the laminate transformer and to a first group of the leads or the lead terminals, and bondwires wirebond the second bond pads to second pads on the laminate transformer and to a second group of the leads or the lead terminals. A mold compound provides encapsulation.

    Packaged semiconductor devices for high voltage with die edge protection

    公开(公告)号:US11417579B2

    公开(公告)日:2022-08-16

    申请号:US16996742

    申请日:2020-08-18

    Abstract: In a described example a device includes: a first corner formed between a circuit side surface of a semiconductor die and a first sidewall formed with a first depth extending along a side of the semiconductor die from the circuit side surface; a ledge having a planar surface formed parallel to the circuit side surface of the semiconductor die formed at the first depth from the circuit side surface at the first corner, and being perpendicular to the first sidewall; a second corner formed by an intersection of the planar surface of the ledge and a scribe lane sidewall of the semiconductor die, forming a second sidewall perpendicular to the circuit side surface; and portions of the circuit side surface of the semiconductor die, the first corner, the first sidewall, and the planar surface of the ledge covered by a passivation layer.

    IC package with half-bridge power module

    公开(公告)号:US11387179B2

    公开(公告)日:2022-07-12

    申请号:US16827455

    申请日:2020-03-23

    Abstract: An integrated circuit (IC) package includes a substrate having a first region and a second region. The substrate includes a conductive path between the first region and the second region. The IC package also includes a lead frame having a first member and a second member that are spaced apart. The IC package further includes a half-bridge power module. The half-bridge power module includes a capacitor having a first node coupled to the first member of the lead frame and a second node coupled to the second member of the lead frame. The half-bridge power module also includes a high side die having a high side field effect transistor (FET) embedded therein and a low side die having a low side FET embedded therein. A source of the high side FET is coupled to a drain of the low side FET through the conductive path of the substrate.

    Semiconductor package with isolated heat spreader

    公开(公告)号:US11302615B2

    公开(公告)日:2022-04-12

    申请号:US16840407

    申请日:2020-04-05

    Abstract: A semiconductor package includes a metallic pad and leads, a semiconductor die attached to the metallic pad, the semiconductor die including an active side with bond pads opposite the metallic pad, a wire bond extending from a respective bond pad of the semiconductor die to a respective lead of the leads, a heat spreader over the active side of the semiconductor die with a gap separating the active side of the semiconductor die from the heat spreader, an electrically insulating material within the gap and in contact with the active side of the semiconductor die and the heat spreader; and mold compound covering the semiconductor die and the wire bond, and partially covering the metallic pad and the heat spreader, with the metallic pad exposed on a first outer surface of the semiconductor package and with the heat spreader exposed on a second outer surface of the semiconductor package.

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