公开(公告)号：US20140060572A1

公开(公告)日：2014-03-06

申请号：US13975528

申请日：2013-08-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Chiaki YASUMURO ,  Takashi Sakuma ,  Osamu Yokoyama ,  Hiroyuki Toshima ,  Masamichi Hara ,  Cheonsoo Han ,  Morihiro Takanashi ,  Toshiaki Fujisato

IPC: H01L21/02

CPC classification number: H01L21/02041 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32449 ,  H01J37/32862 ,  H01L21/02065

Abstract: In a plasma processing apparatus, a mounting table is provided in a processing chamber, and a remote plasma generating unit is configured to generate an excited gas by exiting a hydrogen-containing gas. The remote plasma generating unit has an outlet for discharging the excited gas. A diffusion unit is provided to correspond to the outlet of the remote plasma generating unit and serves to receive the excited gas flowing from the outlet and diffuse the hydrogen active species having a reduced amount of hydrogen ions. An ion filter is disposed between the diffusion unit and the mounting table while being separated from the diffusion unit. The ion filter serves to capture the hydrogen ions contained in the hydrogen active species diffused by the diffusion unit and allow the hydrogen active species having a further reduced amount of hydrogen ions to pass therethrough the mounting table.

Abstract translation: 在等离子体处理装置中，在处理室中设置安装台，远程等离子体发生单元通过离开含氢气体而产生激发气体。 远程等离子体生成单元具有用于排出被激发气体的出口。 提供扩散单元以对应于远程等离子体发生单元的出口并且用于接收从出口流动的激发气体并且扩散具有减少量的氢离子的氢活性物质。 离散过滤器设置在扩散单元和安装台之间，同时与扩散单元分离。 离子过滤器用于捕获由扩散单元扩散的氢活性物质中所含的氢离子，并允许具有进一步减少量的氢离子的氢活性物质从其中穿过安装台。

公开(公告)号：US10242878B2

公开(公告)日：2019-03-26

申请号：US15443687

申请日：2017-02-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomonari Urano ,  Kyohei Noguchi ,  Osamu Yokoyama ,  Takashi Kobayashi ,  Satoshi Wakabayashi ,  Takashi Sakuma

IPC: H01L21/44 ,  H01L21/285 ,  H01L21/67 ,  H01L21/673

Abstract: A substrate processing method is for forming a metal film on a target substrate by using a plasma. The method includes loading a target substrate having a silicon-containing layer on a surface thereof into a processing chamber which is pre-coated by a film containing a metal, introducing hydrogen gas and a gaseous compound of the metal and halogen into the processing chamber, generating a plasma, and forming a metal film on the target substrate. The method further includes performing a first reduction process of forming an atmosphere of a plasma obtained by activating hydrogen gas in the processing chamber, unloading the target substrate from the processing chamber, performing a second reduction process of forming an atmosphere of a plasma obtained by activating hydrogen gas in the processing chamber, and loading a next target substrate into the processing chamber.

公开(公告)号：US10096548B2

公开(公告)日：2018-10-09

申请号：US15072165

申请日：2016-03-16

Applicant: Tokyo Electron Limited

Inventor： Kenji Matsumoto ,  Tadahiro Ishizaka ,  Peng Chang ,  Osamu Yokoyama ,  Takashi Sakuma ,  Hiroyuki Nagai

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/285

Abstract: In a Cu wiring manufacturing method, a MnOx film which becomes a self-formed barrier film by reaction with an interlayer insulating film of a substrate is formed on a surface of a recess formed in the interlayer insulating film by ALD. A hydrogen radical process is performed on a surface of the MnOx film to reduce the surface of the MnOx film. A Ru film is formed by CVD on the surface of the MnOx film which has been reduced by the hydrogen radical process. A Cu-based film is formed on the Ru film by PVD to be filled in the recess. When the Ru film is formed, a film-formation condition of the MnOx film and a condition of the hydrogen radical process are set such that nucleus formation is facilitated and the Ru film is formed in a state where a surface smoothness is high.

公开(公告)号：US20170338120A1

公开(公告)日：2017-11-23

申请号：US15596060

申请日：2017-05-16

Applicant: Tokyo Electron Limited

Inventor： Takashi Kobayashi ,  Seishi Murakami ,  Takashi Sakuma ,  Masahiko Tomita ,  Takamichi Kikuchi ,  Akitaka Shimizu ,  Takayuki Kamaishi ,  Einosuke Tsuda

IPC: H01L21/308 ,  H01L21/285 ,  H01L21/67

CPC classification number: H01L21/3081 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67207

Abstract: Disclosed is a method for removing, from a target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion at a bottom of the pattern. The method includes: forming a carbon-based protective film on the entire surface of the insulating film including the pattern by ALD using a carbon source gas; selectively removing the carbon-based protective film on an upper surface of the insulating film and on the bottom of the pattern by an anisotropic plasma processing; removing the silicon-containing oxide film formed on the bottom of the pattern by etching; and removing a remaining portion of the carbon-based protective film.