公开(公告)号：US20250105499A1

公开(公告)日：2025-03-27

申请号：US18973813

申请日：2024-12-09

Applicant: Toray Industries, Inc

Inventor： Ryuichi Tanaka ,  Seiichiro Murase ,  Junji Wakita

IPC: H01Q1/40 ,  G06K19/077 ,  H01Q9/42 ,  H01Q21/00 ,  H10K10/46 ,  H10K10/82 ,  H10K10/88

Abstract: A flexible wireless communication device with high position accuracy and low cost by a simple process is described, including a wireless communication device and a method for manufacturing a wireless communication device formed by bonding a first film substrate on which at least a circuit is formed and a second film substrate on which an antenna is formed, in which the circuit includes a transistor, and the transistor is formed by a step of forming a conductive pattern on the first film substrate, a step of forming an insulating layer on the film substrate on which the conductive pattern is formed, and a step of applying a solution including an organic semiconductor and/or a carbon material on the insulating layer and drying the solution to form a semiconductor layer.

公开(公告)号：US20220158098A1

公开(公告)日：2022-05-19

申请号：US17441349

申请日：2020-03-06

Applicant: Toray Industries, Inc.

Inventor： Yasuhiro Kobayashi ,  Kazuki Isogai ,  Seiichiro Murase

IPC: H01L51/00 ,  H01L51/10 ,  H01L51/05

Abstract: An object of the present invention is to provide a n-type semiconductor element having improved n-type semiconductor characteristics and excellent stability with a convenient process, where the n-type semiconductor element includes: a substrate; a source electrode, a drain electrode, and a gate electrode; a semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer for insulating the semiconductor layer from the gate electrode; and a second insulating layer positioned on the opposite side of the semiconductor layer from the gate insulating layer and in contact with the semiconductor layer, where the semiconductor layer contains nanocarbon, and the second insulating layer contains (a) a compound with an ionization potential in vacuum of 7.0 eV or less, and (b) a polymer.

公开(公告)号：US11171179B2

公开(公告)日：2021-11-09

申请号：US16303873

申请日：2017-05-29

Applicant: TORAY INDUSTRIES, INC.

Inventor： Shota Kawai ,  Seiichiro Murase ,  Hiroji Shimizu

IPC: H01L27/112 ,  H01L27/28 ,  G06K19/077 ,  H01L51/00 ,  H01L51/10

Abstract: A memory array includes: a plurality of first wires; at least one second wire crossing the first wires; and a plurality of memory elements provided in correspondence with respective intersections of the first wires and the at least one second wire and each having a first electrode and a second electrode arranged spaced apart from each other, a third electrode connected to one of the at least one second wire, and an insulating layer that electrically insulates the first electrode and the second electrode and the third electrode from each other, the first wires, the at least one second wire, and the first wires, the at least one second wire, and the memory elements being formed on a substrate.

公开(公告)号：US20180025912A1

公开(公告)日：2018-01-25

申请号：US15551738

申请日：2016-02-10

Applicant: TORAY INDUSTRIES, INC.

Inventor： Yoshihiro Ikegami ,  Seiichiro Murase ,  Sachio Inaba

IPC: H01L21/225 ,  H01L31/18

CPC classification number: H01L21/225 ,  H01L31/18 ,  Y02E10/50 ,  Y02P70/521

Abstract: A p-type impurity diffusion composition is provided which makes it possible to improve storage stability of a coating liquid, and to achieve uniform diffusion of the coating liquid on a semiconductor substrate. The p-type impurity diffusion composition includes (A) a group-13 element compound, (B) a hydroxyl-group-containing polymer, and (C) an organic solvent, (Cl) a cyclic ester solvent being contained in the organic solvent.

公开(公告)号：US20170244041A1

公开(公告)日：2017-08-24

申请号：US15587996

申请日：2017-05-05

Applicant: TORAY INDUSTRIES, INC.

Inventor： Seiichiro Murase ,  Kazuki lsogai ,  Hiroji Shimizu

IPC: H01L51/00 ,  G01N27/414 ,  C08G61/12

CPC classification number: H01L51/0049 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/174 ,  C08G61/126 ,  C08G2261/18 ,  C08G2261/3223 ,  C08G2261/72 ,  C08G2261/92 ,  C08G2261/94 ,  G01N27/4146 ,  H01L51/0002 ,  H01L51/0036 ,  H01L51/0093 ,  H01L51/0566 ,  H01L51/057 ,  H01L51/105 ,  Y10S977/746 ,  Y10S977/75 ,  Y10S977/847 ,  Y10S977/932

Abstract: A carbon nanotube composite has an organic substance attached to at least a part of a surface thereof. At least one functional group selected from a hydroxyl group, a carboxy group, an amino group, a mercapto group, a sulfo group, a phosphonic acid group, an organic or inorganic salt thereof, a formyl group, a maleimide group and a succinimide group is contained in at least a part of the carbon nanotube composite.

公开(公告)号：US20160372626A1

公开(公告)日：2016-12-22

申请号：US14902403

申请日：2014-06-30

Applicant: TORAY INDUSTRIES, INC.

Inventor： Sachio Inaba ,  Seiichiro Murase ,  Hiroji Shimizu ,  Kouichi Dan ,  Mitsuhito Suwa

IPC: H01L31/18 ,  C09D11/52 ,  C08G77/08 ,  C09D11/03 ,  C08G77/00 ,  H01L31/068 ,  C09D11/102

CPC classification number: H01L31/1876 ,  C08G77/08 ,  C08G77/80 ,  C08K3/32 ,  C08K3/36 ,  C08K2003/329 ,  C09D11/03 ,  C09D11/102 ,  C09D11/52 ,  C09D183/04 ,  H01L21/2225 ,  H01L21/2254 ,  H01L31/0682 ,  H01L31/103 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521 ,  C08K3/38

Abstract: An impurity-diffusing composition including (A) a polysiloxane represented by Formula (1) and (B) an impurity diffusion component. In the formula, R1 represents an aryl group having 6 to 15 carbon atoms, and a plurality of R1 may be the same or different. R2 represents any of a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an acyl group having 2 to 6 carbon atoms, and an aryl group having 6 to 15 carbon atoms, and a plurality of R2 may be the same or different. R3 and R4 each represent any of a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, and an acyl group having 2 to 6 carbon atoms, and a plurality of R3 and a plurality of R4 each may be the same or different. The ratio of n:m is 95:5 to 25:75.

Abstract translation: 式中，R 1表示碳原子数6〜15的芳基，多个R 1可以相同也可以不同。 R2表示任意的羟基，碳原子数1〜6的烷基，碳原子数1〜6的烷氧基，碳原子数2〜10的烯基，碳原子数2〜6的酰基， 具有6至15个碳原子的芳基和多个R 2可以相同或不同。 R 3和R 4各自表示羟基，碳原子数1〜6的烷基，碳原子数1〜6的烷氧基，碳原子数2〜10的烯基，碳原子数2〜6的酰基 原子和多个R 3和多个R 4各自可以相同或不同。 n：m的比例为95:5至25:75。

公开(公告)号：US20160035457A1

公开(公告)日：2016-02-04

申请号：US14774342

申请日：2014-03-11

Applicant: TORAY INDUSTRIES, INC.

Inventor： Seiichiro Murase ,  Maiko Yamamoto ,  Junji Mata ,  Hiroji Shimizu

IPC: H01B3/46 ,  C08K5/56 ,  H01L51/05

CPC classification number: H01B3/46 ,  C08K5/05 ,  C08K5/56 ,  C08L83/04 ,  H01L29/786 ,  H01L51/052

Abstract: There is provided a field effect transistor which comprises a gate insulating layer, a gate electrode, a semiconductor layer, a source electrode and a drain electrode. The gate insulating layer contains an organic compound that contains a silicon-carbon bond and a metal compound that contains a bond between a metal atom and an oxygen atom; and the metal atoms are contained in the gate insulating layer in an amount of 10 to 180 parts by weight with respect to 100 parts by weight of the total of carbon atoms and silicon atoms. This field effect transistor (FET) has high mobility and a low voltage of the threshold value, while being suppressed in leak current.

Abstract translation: 提供了一种场效应晶体管，其包括栅极绝缘层，栅电极，半导体层，源电极和漏电极。 栅极绝缘层包含含有硅 - 碳键的有机化合物和含有金属原子和氧原子之间的键的金属化合物; 并且相对于碳原子和硅原子总数的100重量份，金属原子以10〜180重量份的量包含在栅极绝缘层中。 该场效应晶体管（FET）在泄漏电流被抑制的同时具有高迁移率和阈值的低电压。

公开(公告)号：US12029106B2

公开(公告)日：2024-07-02

申请号：US17441335

申请日：2020-03-06

Applicant: Toray Industries, Inc.

Inventor： Kazuki Isogai ,  Yasuhiro Kobayashi ,  Seiichiro Murase

IPC: H10K85/20 ,  H10K10/46 ,  H10K10/88

CPC classification number: H10K85/221 ,  H10K10/46 ,  H10K10/484 ,  H10K10/88

Abstract: An object of the present invention is to provide a n-type semiconductor element having improved n-type semiconductor characteristics and excellent stability, where the n-type semiconductor element includes a second insulating layer, where the second insulating layer contains: A. (a) a compound having one carbon-carbon double bond or one conjugated system bound to at least one group represented by general formula (1) and at least one group represented by general formula (2); and (b) a polymer; or B. a polymer having, in its molecular structure, the remaining group after removing some hydrogen atoms from R1, R2, R3, or R4 in the compound (a), or the remaining group after removing some hydrogen atoms from the carbon-carbon double bond or the conjugated system in the compound (a).

公开(公告)号：US11161991B2

公开(公告)日：2021-11-02

申请号：US15777072

申请日：2016-11-24

Applicant: TORAY INDUSTRIES, INC.

Inventor： Yuichi Tsuji ,  Takejiro Inoue ,  Seiichiro Murase

IPC: C09D11/101 ,  B41M1/06 ,  C09D11/107 ,  C09D11/037

Abstract: Provided is a lithographic ink having superior surface staining resistance and fluidity. Also provided is a method for manufacturing a printed material using the lithographic ink. The lithographic ink has all of a viscosity (A) at a rotational speed of 0.5 rpm, a viscosity (B) at a rotational speed of 20 rpm, and a viscosity (C) at a rotational speed of 50 rpm of 5 Pa·s or more and 100 Pa·s or less, the viscosities (A), (B), and (C) being measured by using a cone-plate rotating viscometer at 25° C., and has a viscosity ratio (C)/(B) of 0.8 or more and 1.0 or less.

公开(公告)号：US11094899B2

公开(公告)日：2021-08-17

申请号：US16331006

申请日：2017-09-06

Applicant: Toray Industries, Inc.

Inventor： Hiroji Shimizu ,  Seiichiro Murase ,  Shota Kawai

IPC: H01L51/40 ,  H01L51/05 ,  H01L29/786 ,  G06K19/077 ,  H01L23/66 ,  H01L51/00

Abstract: Provided is a method for manufacturing a field-effect transistor, the method including the steps of: forming a gate electrode on the surface of a substrate; forming a gate insulating layer on the gate electrode; forming a conductive film containing a conductor and a photosensitive organic component by a coating method on the gate insulating layer; exposing the conductive film from the rear surface side of the substrate with the gate electrode as a mask; developing the exposed conductive film to form a source electrode and a drain electrode; and forming a semiconductor layer by a coating method between the source electrode and the drain electrode. This method makes it possible to provide an FET, a semiconductor device, and an RFID which can be prepared by a simple process, and which have a high mobility, and have a gate electrode and source/drain electrodes aligned with a high degree of accuracy.