公开(公告)号：US08754445B2

公开(公告)日：2014-06-17

申请号：US13981050

申请日：2012-01-20

申请人： Tadao Ishibashi ,  Seigo Ando ,  Yoshifumi Muramoto ,  Toshihide Yoshimatsu ,  Haruki Yokoyama

发明人： Tadao Ishibashi ,  Seigo Ando ,  Yoshifumi Muramoto ,  Toshihide Yoshimatsu ,  Haruki Yokoyama

IPC分类号： H01L31/107

CPC分类号： H01L29/0615 ,  G02F1/025 ,  G02F2001/0157 ,  H01L29/0692 ,  H01L29/0821 ,  H01L29/205 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/7371 ,  H01L31/03046 ,  H01L31/035281 ,  H01L31/105 ,  Y02E10/544

摘要： A layer in which the potential level difference normally unrequired for device operation is generated is positively inserted in a device structure. The potential level difference has such a function that even if a semiconductor having a small bandgap is exposed on a mesa side surface, a potential drop amount of the portion is suppressed, and a leakage current inconvenient for device operation can be reduced. This effect can be commonly obtained for a heterostructure bipolar transistor, a photodiode, an electroabsorption modulator, and so on. In the photodiode, since the leakage current is alleviated, the device size can be reduced, so that in addition to improvement of operating speed with a reduction in series resistance, it is advantageous that the device can be densely disposed in an array.

摘要翻译： 产生通常不需要用于器件操作的电位电平差的层被积极地插入到器件结构中。 电位差具有这样的功能：即使具有小的带隙的半导体暴露在台面侧表面上，也能够抑制该部分的电位下降量，并且能够减少不利于器件操作的漏电流。 对于异质结双极晶体管，光电二极管，电吸收调制器等，通常可以获得这种效果。 在光电二极管中，由于泄漏电流被减轻，所以能够减小器件尺寸，除了随着串联电阻的降低而提高工作速度之外，还可以将器件密集地排列成阵列。

公开(公告)号：US08575650B2

公开(公告)日：2013-11-05

申请号：US13133990

申请日：2009-12-11

申请人： Tadao Ishibashi ,  Seigo Ando ,  Yoshifumi Muramoto ,  Fumito Nakajima ,  Haruki Yokoyama

发明人： Tadao Ishibashi ,  Seigo Ando ,  Yoshifumi Muramoto ,  Fumito Nakajima ,  Haruki Yokoyama

IPC分类号： H01L31/107

CPC分类号： H01L31/1075

摘要： An electron injected APD with an embedded n electrode structure in which edge breakdown can be suppressed without controlling the doping profile of an n-type region of the embedded n electrode structure with high precision. The APD comprising a buffer layer with a low ionization rate is inserted between an n electrode connecting layer and an avalanche multiplication layer. Specifically, the APD is an electron injected APD in which an n electrode layer, the n electrode connecting layer, the buffer layer, the avalanche multiplication layer, an electric field control layer, a band gap gradient layer, a low-concentration light absorbing layer, a p-type light absorbing layer, and a p electrode layer are sequentially stacked, and a light absorbing portion that includes at least the low-concentration light absorbing layer and the p-type light absorbing layer forms a mesa shape.

摘要翻译： 具有嵌入式n电极结构的电子注入APD，其中可以抑制边缘击穿而不以高精度控制嵌入式n电极结构的n型区域的掺杂分布。 包括具有低电离速率的缓冲层的APD插入在n电极连接层和雪崩倍增层之间。 具体地，APD是电子注入APD，其中n电极层，n电极连接层，缓冲层，雪崩倍增层，电场控制层，带隙梯度层，低浓度光吸收层 p型光吸收层和ap电极层依次层叠，并且至少包含低浓度光吸收层和p型光吸收层的光吸收部形成台面形状。

公开(公告)号：US20050001239A1

公开(公告)日：2005-01-06

申请号：US10497490

申请日：2002-12-03

申请人： Tadao Ishibashi ,  Yukihiro Hirota ,  Yoshifumi Muramoto

发明人： Tadao Ishibashi ,  Yukihiro Hirota ,  Yoshifumi Muramoto

IPC分类号： H01L31/10 ,  H01L31/101 ,  H01L31/105 ,  H01L27/10

CPC分类号： H01L31/105 ,  H01L31/101

摘要： A photodiode has an optical absorption layer composed of a depleted first semiconductor optical absorption layer with a layer width WD and a p-type neutral second semiconductor optical absorption layer with a layer width WA. The ratio between WA and WD is set such that the total carrier transit time τtot becomes minimum in the optical absorption layer. The photodiode can further include a depleted semiconductor optical transmission layer with a bandgap greater than that of the first semiconductor optical absorption layer, between the first semiconductor optical absorption layer and an n-type semiconductor electrode layer.

摘要翻译： 光电二极管具有由具有层宽度WD的贫化的第一半导体光吸收层和具有层宽度WA的p型中性第二半导体光吸收层构成的光吸收层。 WA和WD之间的比率被设定为使得在光吸收层中总载流子传播时间tautot变得最小。 光电二极管还可以包括在第一半导体光吸收层和n型半导体电极层之间具有比第一半导体光吸收层的带隙大的带隙的耗尽的半导体光透射层。

公开(公告)号：US5557117A

公开(公告)日：1996-09-17

申请号：US241189

申请日：1994-05-11

申请人： Yutaka Matsuoka ,  Eiichi Sano ,  Kenji Kurishima ,  Hiroki Nakajima ,  Tadao Ishibashi

发明人： Yutaka Matsuoka ,  Eiichi Sano ,  Kenji Kurishima ,  Hiroki Nakajima ,  Tadao Ishibashi

IPC分类号： H01L29/205 ,  H01L21/331 ,  H01L27/144 ,  H01L29/08 ,  H01L29/73 ,  H01L29/737 ,  H01L31/10 ,  H01L31/11 ,  H01L31/0328

CPC分类号： H01L29/7371 ,  H01L27/1443 ,  H01L29/0821 ,  H01L31/1105

摘要： A heterojunction bipolar transistor includes a collector contact layer constituted by a high-concentration first semiconductor layer of a first conductivity type formed on a semiconductor substrate, a collector region stacked on the collector contact layer, a base layer constituted by a fifth semiconductor layer of a second conductivity type formed on the collector region, and an emitter layer constituted by a semiconductor layer of the first conductivity type formed on the base layer. The collector region is constituted by a second semiconductor layer, a third semiconductor layer of the second conductivity type having an impurity concentration higher than that of the second semiconductor layer, and a fourth semiconductor layer of the first conductivity type having a band gap energy higher than that of each of the first and second semiconductor layers and an impurity concentration higher than that of the second semiconductor layer, and the fourth semiconductor layer and lower than that of the first semiconductor layer, the third semiconductor layer, and the second semiconductor layer are sequentially formed on the collector contact layer in an order named.

摘要翻译： 异质结双极晶体管包括由形成在半导体衬底上的第一导电类型的高浓度第一半导体层，堆叠在集电极接触层上的集电极区域构成的集电极接触层，由第五半导体层 形成在集电极区域上的第二导电类型，以及由形成在基极层上的由第一导电类型的半导体层构成的发射极层。 集电极区域由第二半导体层，具有比第二半导体层的杂质浓度高的第二导电类型的第三半导体层构成，第一导电类型的第四半导体层的带隙能量高于 第一半导体层和第二半导体层的第一半导体层和第二半导体层的杂质浓度高于第二半导体层，第四半导体层的第一半导体层和第二半导体层的杂质浓度比第一半导体层的厚度低 在收集器接触层上形成一个命名的顺序。

公开(公告)号：US5079273A

公开(公告)日：1992-01-07

申请号：US498417

申请日：1990-03-26

申请人： Takashi Kuroda ,  Kazuhiro Yamada ,  Tadao Ishibashi

发明人： Takashi Kuroda ,  Kazuhiro Yamada ,  Tadao Ishibashi

IPC分类号： C08J9/00 ,  B29C55/00 ,  B29C55/02 ,  B29C61/00 ,  C08J5/18 ,  C08L57/02

CPC分类号： C08J5/18 ,  B29C55/005 ,  B29C61/003 ,  B29K2023/12 ,  B29K2023/38 ,  B29K2105/04 ,  B29K2995/0049 ,  C08J2323/14

摘要： The disclosed dulled stretched molding of at most 30% in gloss value, which is useful as a general-purpose packaging material, printing paper, tracing paper, etc., is produced from a composition comprising 100 parts by weight of a propylene-ethylene lock copolymer and 3 to 40 parts by weight of a cyclopentadiene type petroleum resin having a ring and ball softening point of at least 160.degree. C. through melt extrusion thereof and stretching of the resulting flat extrudate.There also is disclosed a heat-shrinkable foamed molding of at most 0.85 in density and at least 10% in heat shrinkability at 100.degree. C., which is useful as a packaging material, a tying material, a label material, etc. This heat-shrinkable foamed molding is produced from a composition comprising a crystalline propylene-.alpha.-olefin copolymer having a crystal melting point of at most 150.degree. C. and 5 to 40 wt. %, based on the copolymer, of a hydrogenated cyclopentadiene type resin having a ring and ball softening point of at least 160.degree. C. through melt extrusion thereof and stretching of the resulting flat extrudate.

公开(公告)号：US5019890A

公开(公告)日：1991-05-28

申请号：US587451

申请日：1990-09-14

申请人： Tadao Ishibashi ,  Yoshiki Yamauchi

发明人： Tadao Ishibashi ,  Yoshiki Yamauchi

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L29/08 ,  H01L29/205 ,  H01L29/36 ,  H01L29/737

CPC分类号： H01L29/36 ,  H01L29/0821 ,  H01L29/7371

摘要： A heterojunction bipolar transistor includes an emitter layer of a first conductivity type, a base layer of a second conductivity type adjacent to the emitter layer, a collector buffer layer of the first conductivity type, and a collector layer arranged between the collector buffer layer and the base layer. The collector layer includes a first collector layer formed at the side of the base layer and a second collector layer arranged at the side of the collector buffer layer. The first collector layer is a semiconductor layer having an impurity concentration lower than that of the base layer. The second collector layer is a semiconductor layer of the second conductivity type having an impurity concentration higher than that of the first collector layer.

公开(公告)号：US07880197B2

公开(公告)日：2011-02-01

申请号：US11993801

申请日：2006-06-27

申请人： Tadao Ishibashi ,  Seigo Ando ,  Yukihiro Hirota ,  Yoshifumi Muramoto

发明人： Tadao Ishibashi ,  Seigo Ando ,  Yukihiro Hirota ,  Yoshifumi Muramoto

IPC分类号： H01L31/06

CPC分类号： H01L31/107 ,  H01L31/1075

摘要： In an electron-injection type APD, it is necessary to prevent a dark current increase and to secure the life time of the device. It is demanded to improve reliability of the APD with a lower production cost. With the InP buffer layer having an n-type doping region on the inside of a region defined by an optical absorption layer, a predetermined doping profile is achieved by ion implantation. Thus, electric field concentration in the avalanche multiplication layer is relaxed. Furthermore, a low-concentration second optical absorption layer is provided between the optical absorption layer and the avalanche multiplication layer. Responsivity of the optical absorption layer is maximized, and depletion of the lateral surface of the optical absorption layer is prevented; thus, electric field concentration is prevented. Preventing edge breakdown, the device improves its reliability.

摘要翻译： 在电子注入型APD中，需要防止暗电流增加并确保器件的使用寿命。 要求以较低的生产成本提高APD的可靠性。 通过InP缓冲层在由光吸收层限定的区域的内侧具有n型掺杂区域，通过离子注入实现预定的掺杂分布。 因此，雪崩倍增层中的电场浓度被放宽。 此外，在光吸收层和雪崩倍增层之间设置低浓度第二光吸收层。 光吸收层的响应性最大化，并且防止光吸收层的侧表面的消耗; 从而防止电场集中。 防止边缘故障，设备提高其可靠性。

公开(公告)号：US20100296769A1

公开(公告)日：2010-11-25

申请号：US12811565

申请日：2008-12-26

申请人： Tadao Ishibashi ,  Kazuhiro Maruyama ,  Kenji Kobayashi ,  Tomoyuki Akeyoshi ,  Nobuhiro Kikuchi ,  Ken Tsuzuki ,  Mitsuteru Ishikawa

发明人： Tadao Ishibashi ,  Kazuhiro Maruyama ,  Kenji Kobayashi ,  Tomoyuki Akeyoshi ,  Nobuhiro Kikuchi ,  Ken Tsuzuki ,  Mitsuteru Ishikawa

IPC分类号： G02F1/035

CPC分类号： G02F1/025 ,  G02F2201/07

摘要： A semiconductor optical modulator that includes a first semiconductor optical waveguide having a laminated structure including a core layer, a first clad layer, a second clad layer, and a barrier layer, the first clad layer and the second clad layer being disposed below and above the core layer, the barrier layer being inserted between the second clad layer and the core layer; a second semiconductor optical waveguide having a laminated structure in which the second clad layer has a p-type semiconductor penetrating locally through a n-type semiconductor in a laminated direction in the laminated structure of the first semiconductor optical waveguide; a first electrode connected to the first clad layer of the first semiconductor optical waveguide; and a second electrode electrically connecting the second clad layer of the first semiconductor optical waveguide and the p-type semiconductor of the second clad layer of the second semiconductor optical waveguide.

摘要翻译： 一种半导体光调制器，包括具有芯层，第一覆层，第二覆层和阻挡层的叠层结构的第一半导体光波导，第一覆层和第二覆层设置在第一半导体光波导的下方和上方 所述阻挡层插入在所述第二覆盖层和所述芯层之间; 具有层叠结构的第二半导体光波导，其中所述第二包层具有在所述第一半导体光波导的层叠结构中在层叠方向上局部穿透n型半导体的p型半导体; 连接到第一半导体光波导的第一包层的第一电极; 以及第二电极，电连接第一半导体光波导的第二包层和第二半导体光波导的第二包层的p型半导体。

公开(公告)号：US20080304786A1

公开(公告)日：2008-12-11

申请号：US12219061

申请日：2008-07-15

申请人： Tadao Ishibashi ,  Seigo Ando ,  Ken Tsuzuki

发明人： Tadao Ishibashi ,  Seigo Ando ,  Ken Tsuzuki

IPC分类号： G02F1/035

CPC分类号： G02F1/01708 ,  B82Y20/00

摘要： The present invention relates to a semiconductor optoelectronic waveguide having a nin-type hetero structure which is able to stably operate an optical modulator. On the upper and lower surfaces of the core layer determined for the structure so that electro-optical effects are effectively exerted at an operating light wavelength and are provided with intermediate clad layers having a band gap which is greater than that of the core layer 11. Respectively on the upper and the lower surface of the intermediate clad layer are provided the clad layers having the band gap which is greater than those of the intermediate clad layers. On the upper surface of the clad layer are sequentially laminated a p-type layer and an n-type layer. In the applied voltage range used under an operating state, a whole region of the p-type layer and a part or a whole region of the n-type layer are depleted.

摘要翻译： 本发明涉及能够稳定地操作光调制器的具有n型异质结构的半导体光电波导。 在对于结构确定的芯层的上表面和下表面上，使得电光效应在工作光波长下有效地施加，并且设置有具有比芯层11的带隙大的带隙的中间包层。 在中间包层的上表面和下表面上分别设置具有大于中间包层的带隙的包覆层。 在包覆层的上表面依次层叠p型层和n型层。 在工作状态下使用的施加电压范围内，p型层的整个区域和n型层的一部分或全部区域耗尽。

公开(公告)号：US5818096A

公开(公告)日：1998-10-06

申请号：US832297

申请日：1997-04-03

申请人： Tadao Ishibashi ,  Tomofumi Furuta ,  Naofumi Shimizu ,  Koichi Nagata ,  Yutaka Matsuoka ,  Masaaki Tomizawa

发明人： Tadao Ishibashi ,  Tomofumi Furuta ,  Naofumi Shimizu ,  Koichi Nagata ,  Yutaka Matsuoka ,  Masaaki Tomizawa

IPC分类号： H01L31/105 ,  H01L31/075 ,  H01L31/107 ,  H01L31/117

CPC分类号： H01L31/105

摘要： A pin photodiode having a structure capable improving the frequency response and the saturation output while maintaining the effective internal quantum efficiency and CR time constant. A pin photodiode is formed by: a first semiconductor layer in a first conduction type; a second semiconductor layer in a second conduction type; a third semiconductor layer sandwiched between the first and second semiconductor layers, having a doping concentration lower than those of the first and second semiconductor layers; a fourth semiconductor layer in the first conduction type, provided at one side of the first semiconductor layer opposite to a side at which the third semiconductor layer is provided; and a cathode electrode and an anode electrode connected directly or indirectly to the second semiconductor layer and the fourth semiconductor layer, respectively. The first semiconductor layer has a bandgap energy by which a charge neutrality condition is maintained in at least a part of the first semiconductor layer and the first semiconductor layer is made to function as a light absorption layer, while the second and third semiconductor layers have bandgap energies by which the second and third semiconductor layers are made not to function as a light absorption layer, and the fourth semiconductor layer has a bandgap energy greater than that of the first semiconductor layer.

摘要翻译： 具有能够在保持有效内部量子效率和CR时间常数的同时提高频率响应和饱和输出的结构的引脚光电二极管。 pin光电二极管是通过以下方式形成的：第一导电类型的第一半导体层; 第二导电类型的第二半导体层; 夹在第一和第二半导体层之间的第三半导体层，其掺杂浓度低于第一和第二半导体层的掺杂浓度; 第一导电型的第四半导体层，设置在与设置有第三半导体层的一侧相反的第一半导体层的一侧; 以及分别直接或间接地连接到第二半导体层和第四半导体层的阴极电极和阳极电极。 第一半导体层具有带隙能量，在第一半导体层的至少一部分中保持电荷中性条件，并且使第一半导体层起光吸收层的作用，而第二和第三半导体层具有带隙 使得第二和第三半导体层不能用作光吸收层的能量，并且第四半导体层的带隙能量大于第一半导体层的能隙。